CN1993809A - 半导体器件制造方法及晶片加工带 - Google Patents
半导体器件制造方法及晶片加工带 Download PDFInfo
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- CN1993809A CN1993809A CNA2005800265406A CN200580026540A CN1993809A CN 1993809 A CN1993809 A CN 1993809A CN A2005800265406 A CNA2005800265406 A CN A2005800265406A CN 200580026540 A CN200580026540 A CN 200580026540A CN 1993809 A CN1993809 A CN 1993809A
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Abstract
一种晶片加工带,包括形成于基底膜(1)上的可移除的粘合剂层(2)与粘接剂层(3)。在抛光工艺中,在所述带粘合到具有突起金属电极(4)的晶片电路基板的状态下,研磨晶片电路基板(5)的背面。在划片工艺中,将该晶片电路基板分为芯片。在拾取该分开的芯片中,其中在该粘接剂层(3)从基底膜(1)剥离而接合到芯片的状态下拾取所述芯片。
Description
技术领域
本发明涉及半导体器件制造方法,并涉及用于该方法的晶片加工带。
背景技术
随着小尺寸及更薄类型的电子器械和元件(电子装置)的最近发展,强烈需要建立一种更高密度的半导体元件封装技术。目前已经用于半导体器件封装的使用引线框架的方法无法满足这种高密度封装的要求。此外,在用于接合的管芯接合材料中,主要使用树脂膏的方法现在占大多数。
为此,倒装片封装方法被提议用于封装尺寸基本上和半导体元件相同的半导体器件。这种倒装片封装作为最小面积半导体元件的封装方法已经引起广泛的注意,对应于小尺寸和高密度电子器械和元件的目前发展。凸块形成于用于倒装片封装的半导体元件的铝电极上,该凸块与电路基底上的引线电学接合。至于该凸块的组成,主要使用焊料,且该焊料凸块通过沉积或电镀形成于被暴露的铝端子上并连接到芯片的内部引线。凸块的其他示例包括形成于引线接合装置内的金柱凸块。
如果就这样使用通过这种倒装片连接的半导体器件,则连接部分的电极暴露于空气,且因为芯片和基底之间存在大的热膨胀系数差异,通过后续步骤例如焊接回流步骤中的热历史,大的应力作用于凸块的连接部分,由此引发有关封装可靠性的问题。
为了解决该问题,采用如下方法,即在凸块与基底连接之后,半导体元件与基底之间的间隙填充了树脂膏或粘接膜,该树脂膏或粘接膜随后被固化从而将半导体元件固定和紧固到基底,由此改善连接部分的可靠性。
此外,带被提议作为粘合粘接带,以用于从划片(dicing)步骤到管芯接合的步骤。然而已经发现,由于形成了与紫外辐射有关的三维交联结构,在用于此目的的紫外固化之后,可移除的粘合或粘接剂难以保持树脂流动性。因此,该填充物无法令人满意地填充到基底凹凸表面内,使得无法获得接合可靠性。
同时,经过倒装片封装的半导体元件通常具有许多电极,而且由于电路设计问题,这些电极布置于半导体元件周围。因此,如果当填充树脂膏时,通过毛细现象将液态树脂从这些半导体元件的电极之间的间隙注入,则树脂不充分地展开,这使得容易出现未填充部分,产生的问题包括动作不良,例如半导体元件趋于不稳定以及低防湿可靠性。此外,当芯片尺寸更小时,基底被溢出液态树脂污染,且当电极节距变窄时,使得树脂注入变得困难。此外,需要花非常长的时间将树脂填充到各个倒装连接半导体元件内,考虑到固化步骤,这会产生生产效率问题。在通过热压一次接合粘附膜之后将晶片划片成芯片的方法,与填充树脂膏的方法相比步骤更为简化,因此是优选的。然而,由于随着晶片厚度降低,在热压接合时晶片更容易受到损伤,这更加需要在通过热压接合粘接膜之后研磨或切割厚晶片的背面。
然而,在用于背面研磨的可移除的粘合带和粘接膜的传统组合中,该带与粘接膜具有强的亲合力,导致的问题为,背面研磨之后的剥离力趋于增大,因此在剥离步骤中容易导致对晶片的损伤。此外,为了改善粘接膜填充到凹凸基底内的能力并由此提高接合可靠性,需要降低粘接膜在加热下被施用时的熔融粘度。然而,在加热下涂敷和粘合,从可移除的粘合带剥离粘接膜的力趋于增大,产生的问题为在加热下粘合之后,难以从可移除的粘合带剥离粘接膜。
通过参考附图从下述描述中,本发明的其他和进一步特征及优点将变得更显而易见。
发明内容
根据本发明,提供了下述手段:
(1)晶片加工带,包括形成于基底膜上的可移除的粘合剂层与粘接剂层,
其中所述带用于涉及如下步骤的工艺:在所述带粘合到晶片电路基板的状态下,研磨具有凸起型金属电极的晶片电路基板的背面,并将该晶片电路基板划片成芯片;以及拾取(pick up)芯片,其中在该粘接剂层从基底剥离而接合到各个芯片的状态下拾取该芯片;
(2)根据上述(1)的晶片加工带,其中在拾取步骤中,在该可移除的粘合剂层与基底膜接合且仅该粘接剂层与管芯接合的状态下,芯片从该可移除的粘合剂层剥离;
(3)根据上述(2)的晶片加工带,其中该可移除的粘合剂层包含丙烯酸型共聚物为主要成分且凝胶比例为60%以上;
(4)根据任一上述(1)至(3)的晶片加工带,其中该可移除的粘合剂层为可辐射固化;
(5)根据任一上述(1)至(4)的晶片加工带,其中该粘接剂层为可热固化;
(6)根据任一上述(1)至(5)的晶片加工带,其中该粘接剂层包含作为主要成分的丙烯酸树脂、环氧树脂或聚酰亚胺树脂中的至少一种,且在25℃时的贮藏弹性模量(storage elastic modulus)为1MPa以上,在80℃时的贮藏弹性模量为0.05MPa以下;
(7)根据任一上述(1)至(6)的晶片加工带,其中该可移除的粘合剂层包含丙烯酸型共聚物作为其主要成分,所述丙烯酸型共聚物主要成分由这样的丙烯酸型共聚物组成,其至少具有包含可辐射固化的碳-碳双键的基团,并具有在主链上包含羟基和羧基的基团;
(8)通过使用根据上述(1)的晶片加工带的半导体器件制造方法,包括步骤:
将所述带粘合到具有凸起型金属电极的晶片电路基板;
研磨该晶片电路基板的背面;
将该晶片电路基板划片成芯片;
拾取该芯片;以及
将拾取的芯片倒装片接合到基底上;
(9)根据上述(8)的半导体器件制造方法,进一步包括:在研磨步骤之后且划片步骤之前,将划片可移除的粘合带粘合到晶片加工带,其中该晶片加工带已经粘合到具有凸起型金属电极的晶片电路基板;以及
(10)根据上述(8)的半导体器件制造方法,进一步包括:在研磨步骤之后且划片步骤之前,将划片可移除的粘合带粘合到晶片电路基板的背面,其中该晶片加工带粘合到具有凸起型金属电极的该晶片电路基板。
这里,术语“可移除的粘接剂”是指能够粘合且在诸如固化的处理之后可以被除去的制剂,而术语“粘接剂”是指仅能够粘合的制剂。例如,术语“可辐射固化的可移除的粘接剂”是指这样的可移除的粘接剂,即,在将该可移除的粘接剂涂敷到晶片等之后,通过例如紫外辐射的照射被硬化而可以除去或剥离。
此外,术语“粘接剂层”是指这样的层,即,当半导体晶片等安装及划片以及随后拾取芯片时可以从可移除的粘合剂层剥离并仍粘合到芯片,且当芯片安装于及固定到基底或引线框架时可用做粘接剂。
此外,术语“可移除的粘合剂层”是指这样的层,即,与待接合的目标的剥离力小于与粘接剂层的剥离力,并可用做临时粘合。
此外,术语“剥离力”是指将粘合表面剥离分开所需的力,可以根据JISZ0237中规定的方法确定。
根据本发明使用晶片加工带的具有金属电极的晶片的倒装片封装方法,在形成薄的晶片芯片层叠结构方面呈现显著的效果,还呈现薄晶片可以容易和安全地加工且整个工艺可以缩短的优良效果。
此外,本发明的晶片加工带可以在用于晶片背面研磨步骤、划片步骤、和管芯接合步骤的整个工艺中使用;该晶片加工带优选地用于生产倒装片封装基底的上述方法。
附图说明
图1为示出了使用本发明实施方案的晶片加工带的工艺的示图。图1(a)为剖面图,图1(b)为底视图,图1(c)为剖面图,图1(d)为剖面图,图1(e)为剖面图。
图2为示出了根据本发明,使用晶片加工带的半导体器件制造方法的另一个实施方案的示图。图2(a)为剖面图,图2(b)为剖面图,图2(c)为平面图,图2(d)为剖面图,图2(e)为剖面图。
图3为示出了根据本发明,使用晶片加工带的半导体器件制造方法的又一个实施方案的示图。图3(a)为剖面图,图3(b)为剖面图,图3(c)为平面图,图3(d)为剖面图,图3(e)为剖面图。
具体实施方式
本发明的发明人已经进行各种研究以解决上述传统倒装片封装工艺中的问题。结果,发明人发现:通过在具有凸起金属电极的晶片电路基板的背面被研磨之前,通过将具有特定粘接膜的特定保护带粘合到电极表面上,通过在粘合了保护带的状态下将该晶片电路基板划片成芯片,以及当从具有电极的电路基底剥离该保护带时,仅剥离该保护带以将该粘接膜保留在具有金属电极的晶片电路基板上,由此可实现贴附了粘接膜的各个划片晶片电路基板可以容易安全地与基底倒装片接合,另外传统生产工艺可以缩短。基于上述发现,发明人实现了本发明。
本发明将在下文中得到详细描述。
本发明的晶片加工带具有基底膜,以及形成于该基底膜上的可移除的粘合剂层和粘接剂层。该可移除的粘合剂层优选包含丙烯酸型共聚物为主要成分(优选地80质量%以上)。所使用的丙烯酸型共聚物优选为丙烯酸型共聚物,基本成分至少包含可辐射固化的碳-碳双键、环氧基和在其侧链的羧基。对于如何生产该丙烯酸型共聚物没有具体限制,例如可以利用通过将化合物(1)与化合物(2)反应获得的化合物,其中化合物(1)为例如丙烯酸型共聚物或甲基丙烯酸型共聚物,其具有光聚合碳-碳双键和官能团,化合物(2)具有能够与上述官能团反应的官能团。
在这些化合物中,通过将具有光聚合碳-碳双键的单体((1)-1)例如丙烯酸烷基酯或甲基丙烯酸烷基酯与具有官能团的单体((1)-2)共聚合,可以获得上述具有光聚合碳-碳双键和官能团的化合物(1)。单体((1)-1)例如包括分别具有6至12个碳原子的丙烯酸己酯、丙烯酸正辛酯、丙烯酸异辛酯、丙烯酸2-乙基己酯、丙烯酸月桂酯、丙烯酸癸酯,或者具有5个以下碳原子的单体,例如丙烯酸正戊酯、丙烯酸正丁酯、丙烯酸异丁酯、丙烯酸乙酯和丙烯酸甲酯,或者甲基丙烯酸酯等。对于单体((1)-1)的情形,由于单体的碳原子数目增大,玻璃转变温度变低,由此可以生产具有期望玻璃转变温度的单体。此外,除了玻璃转变温度之外,为了提高相容性及各种性能,可以按5质量%以下的比例混合具有碳-碳双键的低分子化合物,例如乙酸乙烯酯、苯乙烯和丙烯腈。
单体((1)-2)具有的官能团的示例包括羧基、羟基、氨基、环酸酐基、环氧基、以及异氰酸基(isocyanato)。单体((1)-2)的具体示例包括丙烯酸、甲基丙烯酸、肉桂酸、衣康酸、延胡索酸、邻苯二甲酸、2-羟烷基丙烯酸酯、2-羟烷基甲基丙烯酸酯、乙二醇单丙烯酸酯、乙二醇单甲基丙烯酸酯、N-羟甲基丙烯酰胺、N-羟甲基甲基丙烯酰胺、烯丙醇、N-氨乙基丙烯酸酯、N-氨乙基甲基丙烯酸酯、丙烯酰胺、甲基丙烯酰胺、马来酸酐、衣康酸酐、延胡索酸酐、邻苯二甲酸酐、缩水甘油丙烯酸酯、缩水甘油甲基丙烯酸酯、烯丙基缩水甘油酯、以及异氰酸酯化合物,其中异氰酸基被具有羟基或羧基并具有光聚合碳-碳双键的单体部分地氨基甲酸酯改性。在化合物(2)中,所使用的官能团,对于化合物(1)中的官能团即单体((1)-2)为羧基或环酸酐基的情形,包括羟基、环氧基、异氰酸基等;或者对于化合物(1)中的官能团为羟基的情形,包括环酸酐基、异氰酸基等;对于化合物(1)中的官能团为氨基的情形,包括环氧基、异氰酸基等;或者对于化合物(1)中的官能团为环氧基的情形,包括羧基、环酸酐基、氨基等。化合物(2)中官能团的具体示例包括和单体((1)-2)中所举的具体示例相同的官能团。通过在化合物(1)和化合物(2)之间的反应中留下未反应的官能团,可以生产具有例如优选地在本发明中界定的酸值或羟值的特性的化合物。
在上述丙烯酸系共聚物的合成中,当通过溶液聚合执行共聚反应时,有机溶剂可以使用酮系、酯系、醇系或芳香族系溶剂。其中,优选的溶剂为对于丙烯酸系聚合物的常用的良好的溶剂,该溶剂具有60至120℃的沸点。优选溶剂的示例包括甲苯、乙酸乙酯、异丙醇、苯甲基纤维素溶剂(benzenemethylcellosolve)、乙基纤维素溶剂(ethylcellosolve)、丙酮、甲乙酮等。聚合引发剂通常使用偶氮(azobis)系自由基发生剂,例如α,α’-偶氮二异丁腈,以及有机过氧化物系,例如过氧化苯酰。此时,如果需要,则可选地可以添加催化剂、聚合抑制剂等。这样,通过控制聚合温度和聚合时间,可以获得具有期望分子量的丙烯酸系共聚物。分子量的控制,优选使用硫醇系或四氯化碳系溶剂。此外,该共聚不限于溶液聚合,也可以通过其他方式执行,例如本体聚合、悬浮聚合等。
如前所述,可以获得丙烯酸系共聚物。在本发明中,丙烯酸系共聚物的分子量优选约300,000至约1,000,000。如果分子量太小,辐射照射的粘着力变得更少,因此在对晶片划片时容易发生元件(芯片)的错位,且图像识别变得困难。此外,为了尽可能防止元件这种错位,优选该分子量为400,000以上。如果分子量太大,在合成及涂敷时可能发生凝胶化。此外,至于共聚物的性能,由于玻璃转变温度低,当辐射照射的不是图案形状而是整体的时,辐射照射之后该可移除的粘接剂的流动性不足,即使分子量大。因此,尽管不发生这种问题使得元件之间的间隔在伸展之后不足或者在拾取时难以识别图像,分子量更优选900,000以下。这里,本发明中的分子量是指就聚苯乙烯而言的重量平均分子量。
此外,在本发明中,将被引入丙烯酸系共聚物的光聚合碳-碳双键数量优选为0.5至2.0meq/g(毫克当量/克),更优选为0.8至1.5meq/g。如果双键数量太少,则辐射照射之后降低临时粘合强度的效果变小。如果双键数量太多,则辐射照射之后该可移除的粘接剂的流动性不足,由此使得在一些情况下,所得的元件之间的间隔在伸展之后不足且对于各个元件在拾取时难以识别图像。这种情况下,另外,丙烯酸系共聚物本身稳定性不足,且本身变得难以生产。
此外,在本发明中,通过调整丙烯酸型共聚物的平均分子量和所混合的硬化剂的数量,可以控制在可移除的粘合剂层固化之前该可移除的粘合剂层的凝胶比例。凝胶比例优选为60%以上,更优选为80至100%。如果凝胶比例太小,该可移除的粘合成分趋于在接合界面上略微移动,由此随着时间流逝难以获得剥离力的稳定性。此外,优选地,该丙烯酸系共聚物具有OH基,使得氢氧基值为5至100,因为辐射照射之后临时粘合强度降低,由此进一步减小拾取错误的风险。此外,优选地丙烯酸系共聚物具有COOH基,使得酸值为0.5至30,因为带恢复(复原)性能得到改善,由此使得容易处理用于用过的带的带容纳型机构。同时,如果丙烯酸系共聚物的羟基值大小,辐射照射之后的临时粘合强度不会被充分降低,或者如果太高,辐射照射之后该可移除的粘接剂的流动受损。此外,如果酸值太低,带恢复性能不会被充分改善,或者如果太高,该可移除的粘接剂的流动性受损。
此外,对于通过紫外辐射硬化(固化)用于本发明的可辐射固化可移除的粘接剂的情形,对于附加成分,如果需要,可以利用光聚合引发剂,例如苯偶姻异丙醚、苯偶姻异丁醚、苯甲酮、米氏酮、氯基噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮、苄基二甲基缩酮、α-羟基环己基苯基甲酮、2-羟甲基苯丙烷等。与100质量份的丙烯酸系共聚物混合的光聚合引发剂的数量优选地为0.01至5质量份。
该可移除的粘合剂层的厚度优选为5至50μm。
可用于本发明的基底膜可以是具有辐射透射性能的任意材料的膜。该膜材料的示例包括α-烯烃的均聚物或共聚物,例如聚乙烯、聚丙烯、乙烯/丙烯共聚物、聚丁烯、乙烯/乙酸乙烯共聚物、乙烯/丙烯酸共聚物、或者离聚物;工程塑料,例如聚对苯二甲酸乙二醇酯、聚碳酸酯、或者聚甲基异丁烯酯;或者热塑性橡胶,例如聚氨酯、苯乙烯/乙烯/丁烯或戊烯系共聚物。备选地,该基底膜可由选择上述化合物组的两种以上材料的混合物形成;且该基底膜可由选自上述化合物组的单层、双层或更多层形成。
所使用的膜的厚度优选为50至200μm。在该基底膜上层叠上述可移除的粘合而获得的材料也称为“保护膜(可移除的或临时粘合带)”。
在根据本发明的管芯接合粘接剂层中,可以利用粘接剂,其通常用于管芯接合,例如包含环氧树脂作为主要成分的膜状粘接剂。
此外,出于赋予电导性与/或热导性的目的,具有优良导电性或导热性的精细金属粉末与/或任何其他材料可添加到上述粘接膜。
此外,还可以将例如金属氧化物或玻璃的精细粉末添加到该粘接膜,从而改善热稳定性。
为了保证接合可靠性,重要的是,上述粘接剂在粘合时足够软,从而填充具有凹凸表面的基底而不产生空洞。然而,当背面被研磨时,该粘接剂必须具有约0.1MPa以上的弹性模量,由此不发生形变。为了防止在基底的凹凸表面上出现空洞,在粘合时该粘接剂的弹性模量优选地为0.05MPa以下;且当粘接剂以留在电路基底上的状态被剥离时,该粘接剂的弹性模量优选地为1MPa以上,此时临时粘合性消失。
管芯接合粘接剂层的厚度优选为5至50μm。
通过涂敷等将粘接剂层提供于例如聚对苯二甲酸乙二醇酯膜的承载膜上,用于晶片管芯接合的粘接剂层可形成为晶片管芯接合膜。这种情况下,该承载膜在使用时将被剥离。
通过按照常规方式层叠由此获得的保护带和晶片管芯接合膜,使得该可移除的粘合剂层和该粘接剂层层叠,由此生产晶片加工带。在晶片加工带的优选实施方案中,在该可移除的粘合剂层与基底膜接合以及在拾取步骤中仅粘接剂层与管芯接合的状态下,该粘接剂层从该可移除的粘合剂层剥离。当晶片加工带被加热粘合到半导体晶片时,可保持临时粘合强度,其足以防止在研磨背面及对晶片划片时具有电极的晶片与保护带剥离;在拾取芯片时,通过辐射固化,可以容易地将该可移除的粘合剂层从具有粘接剂层的芯片剥离。
在划片时,粘接膜与保护带之间的剥离力优选为0.5至10N/25mm;辐射照射之后,贴附粘接膜的芯片与保护带之间的剥离力优选为0.5至0.05N/25mm。
上述可移除的粘合剂层优选是可辐射固化的。此外,上述粘接剂层优选为可热固化。此外,优选地,上述粘接剂层包括丙烯酸树脂、环氧树脂或聚酰亚胺树脂中的任意一种作为主要成分,在25℃贮藏弹性模量为1MPa以上(通常为50MPa以下),在80℃贮藏弹性模量为0.05MPa以下(通常为0.005MPa以上)。此外,该可移除的粘合剂层优选包含丙烯酸型共聚物作为其主要成分,该丙烯酸型共聚物包括:在其主链上至少具有包含可辐射固化的碳-碳双键的基团,和包含羟基和羧基的基团作为其主要成分的丙烯酸型共聚物。
本发明的晶片加工带在粘合到晶片电路基板的状态下,用于研磨具有金属电极的晶片电路基板背面的步骤,和将该晶片电路基板划片为芯片的步骤。因此,本发明的晶片加工带在晶片被研磨时具有保护带的功能,并且还设有在接合芯片时使用的管芯接合粘接剂层。
可以例如如图1所示使用本发明的晶片加工带。图1的示图示出了使用本发明晶片加工带,生产半导体器件的方法的一个实施方案的工艺。这里,在以下图示的描述中,相同的参考数字表示相同的元件,从而省略重复的解释。
在如图1(a)的剖面视图所示的晶片加工带中,粘接剂层3层叠在保护带(BG带)上,该保护带设有层叠于基底膜1上的可移除的粘合剂层2。
粘接剂层3可以使用不导电或绝缘膜(NCF)或者各向异性导电膜(ACF)。
接着,如图1(c)的剖面视图所示,晶片加工带粘合到具有凸起型金属(例如金)电极(凸块)4的晶片电路基板5,随后加热以将该带接合到基底,从而将该凸起型金属电极4埋入粘接剂层3。接着,背面按虚线所示深度被研磨,直到指定厚度。图1(b)为图1(c)的步骤的底视图,其中6表示金凸块晶片,7表示环状框架。接着,在加工带粘合到电路基底的状态下,使用辐射照射该电路基底。之后,晶片电路基板被划片(图1(d)),以拾取芯片(图1(e))。此时,晶片加工带的粘接剂层3从保护带的可移除的粘合剂层2剥离,在接合到芯片的状态下被拾取,并在管芯接合步骤中作为粘接剂,从而产生半导体器件。
图2的示图示出了使用本发明的晶片加工带生产半导体器件的方法的另一个实施方案的工艺。如图2(a)的剖面视图所示,晶片加工带由层叠于保护带(BG带)上的粘接剂层3组成,该保护带设有层叠于基底膜1上的可移除的粘合剂层2。接着,如图2(b)的剖面视图所示,晶片加工带粘合到具有凸起型金属电极(凸块)4的晶片电路基板5,随后加热以将该带接合到基底,从而将该凸起型金属电极4埋入粘接剂层3;接着,背面按虚线所示深度被研磨,直到指定厚度。接着,划片可移除的粘合带8粘合到保护带的基底膜1侧,随后使用辐射照射,接着所得的晶片电路基板5被划片。图2(c)为该步骤的平面视图,其中7表示环状框架,9表示金凸块晶片和粘接剂及保护带。此外,图2(d)为该步骤的剖面视图。接着拾取芯片(图2(e))。晶片加工带的粘接剂层3从保护带的可移除的粘合剂层2剥离,在接合到芯片的状态下被拾取,并在管芯接合步骤中作为粘接剂,从而生产半导体器件。
图3的示图示出了使用本发明的晶片加工带产生半导体器件的方法的又一个实施方案的工艺。
如图3(a)的剖面视图所示,晶片加工带具有一种结构,其中粘接剂层3层叠于保护带(BG带)上,该保护带设有层叠于基底膜1上的可移除的粘合剂层2。接着,如图3(b)的剖面视图所示,晶片加工带粘合到具有凸起型金属电极(凸块)4的晶片电路基板5,随后加热以将该带接合到基底,从而将该凸起型金属电极4埋入粘接剂层3;接着,背面被按虚线所示深度研磨,直到指定厚度。接着,划片可移除的粘合带8粘合到晶片的研磨表面,随后使用辐射照射,从保护带侧划片该晶片电路基板5。图3(c)为该步骤的平面视图,其中7表示环状框,9表示金凸块晶片和粘接剂及保护带。此外,图3(d)为该步骤的剖面视图。接着,使用脱模(或者剥离)带,具有基底膜1和可移除的粘合剂层2的保护带从晶片剥离,以拾取接合了粘接剂层3的芯片(图3(e))。该粘接剂层3在管芯接合步骤中作为粘接剂,从而生产半导体器件。
基于下文给出的示例更详细地描述本发明,但是本发明不限于这些示例。
示例
根据下述测试,测试并评价下述示例中的各个特性。“份(part)”是指质量份量。
1.凝胶百分比:称出约0.05g的可移除的粘合剂层,将其浸入50ml的二甲苯120℃保持24小时,随后所得的二甲苯被过滤经过200目的不锈钢网,保留在网上的所得的不溶成分在110℃干燥120分钟。随后,由此干燥的不溶成分的质量被称重,以根据下述公式确定凝胶百分比:凝胶比例(%)={(不溶成分的质量)/(被称重的可移除的粘合剂层的质量)}×100
2.可移除的粘接剂双键数量:通过在真空中暗处通过溴加成反应的质量增加方法,测量并定量确定约10g的加热及干燥后可移除的粘接剂中包含的碳-碳双键的数量。
3.拾取成功率:在示例和比较例中产生的任一加工带在室温或80℃的温度下粘合到具有电极的晶片10秒;晶片背面研磨至晶片厚度50μm。接着,所得的晶片划片称尺寸为10mm×10mm的芯片。随后,如果需要使用空冷型高压汞灯(80W/cm,照射距离10cm)以200mJ/cm2的强度,对可移除的粘合剂层照射紫外线。接着,使用管芯接合测试器(三级推力系统,由RenesasEastern Japan Semiconductor,Inc.制造进行拾取测试,以得到每100个拾取芯片的数目上的拾取成功率(%)。
4.晶片背面研磨性能
○:没有观察到晶片损伤和出现微裂纹。
×:观察到晶片损伤或出现微裂纹。
5.划片特性
○:划片期间加工带被剥离。
×:划片期间加工带未被剥离。
6.抗回流可靠性:在封装被润湿之后,在评估示例和比较例中制作的倒装片封装的抗回流可靠性中,
○:即使在JEDEC级别3的工艺中,没有发生封装裂纹。
×:在JEDEC级别3的工艺中发生封装裂纹。
测量弹性模量的方法
25℃和80℃下粘接膜的弹性模量按照以下方式测量。粘弹性计(商品名称为ARES,由Reometric Science Co.制造)用于从0℃开始测量,在5℃/min的升温速率以及1Hz频率的条件下测量动态粘弹性,其中当温度到达25℃或80℃时的贮藏弹性模量G’定义为各自弹性模量。
测量剥离力的方法
根据JIS Z0237测量UV照射(UV辐射量为1000mJ/cm2)之前或之后的各个剥离力。晶片加工带(用于粘贴晶片的粘合粘接带)在加热情况下粘合到被加热至80℃的硅晶片的镜面,从而测量粘接剂层和可移除的粘合带之间的剥离力。该测试在以下条件下进行:90℃剥离,剥离速度为50mm/min。
合成化合物(A),一种丙烯酸型共聚物
以65份丙烯酸丁酯、25份2-丙烯酸羧乙基酯和10份丙烯酸为原材料,通过溶液自由基聚合获得共聚物。接着,2-异氰酸酯基甲基丙烯酸酯逐滴加入至该共聚物,使两者反应产生共聚物。逐滴添加的2-异氰酸酯基甲基丙烯酸酯的数量以及溶液自由基聚合的反应时间受到控制,从而产生共聚合物A1至A6和A11至A13,这些共聚物在碳-碳双键数目、分子量等上不同。
生产丙烯酸型可移除的粘合带
聚氨酯化合物(商品名称为Coronate L,由Nippon Polyurethane IndustryCo.,Ltd.制造)作为化合物(B)硬化剂以及α-羟基环己基苯酮作为化合物(C)光引发剂,按照以下表1所示配方分别添加并混合到化合物(A),从而获得可移除的粘接剂。
任一可移除的粘接剂涂敷到高密度聚乙烯(PE)树脂膜(100μm),形成干燥后厚度为10μm的可移除的粘合剂层,从而分别产生可移除的粘合带。这样获得的可移除的粘合带在环境温度下被层叠于稍候解释的包含环氧树脂为主要成分的25μm厚粘接膜上,从而生产晶片加工带。该层叠按以下方式进行。可移除的粘合带的可移除的粘合剂层被层叠并粘合到粘接膜的粘接剂层,随后在使用该晶片加工带时,剥离该粘接膜的下述承载膜。
生产粘接膜
(生产粘接膜1)
环己酮被添加到下述组成,该组成包括作为环氧树脂的100质量份的甲酚酚醛型环氧树脂(环氧当量197,分子量1200,软化点70℃)、作为硅烷耦联剂的1.5质量份的γ-巯基丙基三甲氧基硅烷和3质量份的γ-脲基丙基三甲氧基硅烷、以及30质量份的平均粒子直径16nm的硅石填充剂,并搅拌混合,之后使用球磨揉制90分钟。
将100质量份的丙烯酸树脂(重量平均分子量为200000,玻璃转变温度为-17℃)、作为六个官能丙烯酸酯单体的5质量份的二(聚)季戊四醇六丙烯酸酯、作为硬化剂的0.5质量份的六亚甲基二异氰酸酯的加合物、以及2.5份的Curesol 2PZ(商品名称,由Shikoku Kasei(K.K.),制造,2-苯基咪唑)加入上述揉制的混合物,进行搅拌混合,随后在真空中除气,以获得粘接剂。
将该粘接剂涂敷到经过脱模处理的25μm厚的聚对苯二甲酸乙二醇酯(PET)膜,随后在110℃下加热1分钟进行干燥,以形成膜厚40μm且处于B阶段状态的涂膜,由此产生设有承载膜的粘接膜1。
(生产粘接膜2)
按照与生产粘接膜1相同的方法生产粘接膜2,不同之处为:作为硬化剂的六亚甲基二异氰酸酯的加合物使用0质量份(即,不使用),使用2.5质量份的Curesol 2PHZ(商品名称,由Shikoku Kasei(K.K.),制造,2-二羟咪唑)替代Curesol 2PZ。
(生产粘接膜3)
按照与生产粘接膜1相同的方法生产粘接膜3,不同之处为:作为环氧树脂的50质量份的甲酚酚醛型环氧树脂(环氧当量197,分子量1200,软化点70℃),以及1质量份的作为硬化剂的六亚甲基二异氰酸酯的加合物。
(示例1至7)
通过表1所示组合获得的任一晶片加工带分别在80℃的电热板上加热,被粘合到具有金柱型凸块的5英寸晶片,其中承载膜已经剥离该晶片加工带,随后使用背侧研磨机研磨该电路基底的背侧,使该电路基底具有50μm的加工厚度。随后,在加工带粘合到电路基底的状态下,使用1000mJ/cm2剂量的UV照射该电路基底,随后划片为均为10mm×10mm的方形行片。使用拾取管芯接合器拾取所得的芯片,且根据树脂基底的电极位置封装倒装芯片,从而生产半导体器件。
(比较例1至3)
按照与示例相同的方式生产半导体器件,不同之处为使用如表2所示的组合所获得的任一晶片加工带;按照与前述相同的方式测试和评估所得的装置。
表1
示例1 | 示例2 | 示例3 | 示例4 | 示例5 | 示例6 | 示例7 | |||
保护带支持 | PE | PE | PE | PE | PE | PE | PE | ||
保护带可移除的粘合剂组成 | 1A | 2A | 3A | 4A | 5A | 6A | --- | ||
化合物(A) | 双键数量 | 1 | 1 | 0.8 | 2 | 4 | 0 | --- | |
分子量 | 50万 | 70万 | 16万 | 90万 | 60万 | 90万 | --- | ||
羟基值 | 40 | 35 | 56 | 23 | 0 | 120 | --- | ||
酸值 | 10 | 6 | 6 | 5 | 6 | 0 | --- | ||
Tg(℃) | -60 | -65 | -20 | -64 | -30 | -53 | --- | ||
化合物(B) | 名称 | B1 | B1 | B1 | B1 | B1 | B1 | --- | |
数量(质量份) | 1 | 1 | 2 | 2 | 2 | 3 | --- | ||
化合物(C) | 1 | 1 | 1 | 1 | 1 | 1 | --- | ||
凝胶比例(%) | 90.5 | 92 | 67 | 86 | 84 | 78 | --- | ||
粘接膜 | 1 | 1 | 1 | 1 | 1 | 1 | 2 | ||
弹性模量(25℃)(MPa) | 1 | 1 | 1 | 1 | 1 | 1 | 0.5 | ||
弹性模量(80℃)(MPa) | 0.03 | 0.03 | 0.03 | 0.03 | 0.03 | 0.03 | 0.01 | ||
晶片背面研磨性能 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ||
划片特性 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ||
抗回流可靠性 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ||
粘接膜/保护带之间的剥离力(N/25mm) | 紫外照射之前 | 1.3 | 1.6 | 1.7 | 1.3 | 1.7 | 0.35 | 0.45 | |
80℃加热→紫外照射1小时之后 | 0.12 | 0.11 | 0.14 | 0.15 | 0.33 | 0.38 | 0.50 | ||
拾取成功率(%) | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
表2
比较例 | ||||
1 | 2 | 3 | ||
保护带支持 | PE | PE | PE | |
保护带可移除的粘合剂组成 | 11A | 12A | 13A | |
化合物(A) | 双键数量 | 0.1 | 0.1 | 使用混合物替代示例1的化合物(A) |
分子量 | 500,000 | 5,000 | ||
羟基数值 | 0 | 35 | ||
酸值 | 0 | 6 | ||
Tg(℃) | -60 | -65 | ||
化合物(B) | 名称 | B1 | B1 | B1 |
数量(质量份) | 1 | 1 | 1 | |
化合物(C) | 1 | 1 | 1 | |
凝胶比例(%) | 20 | 78 | 0 | |
粘接膜 | 1 | 3 | 1 | |
弹性模量(25℃)(MPa) | 1 | 0.9 | 1 | |
弹性模量(80℃)(MPa) | 0.03 | 0.2 | 0.03 | |
晶片背面研磨性能 | ○ | ○ | ○ | |
抗回流可靠性 | ○ | × | ○ | |
粘接膜/保护带之间的剥离力(N/25mm) | 紫外照射之前 | 1.7 | 2.1 | 2.1 |
80℃加热→紫外照射1小时之后 | 2.5 | 0.2 | 20以上,不可能剥离 | |
拾取成功率(%) | 0 | 100 | 0 |
B1:Coronate L
C:α羟基环已基苯基酮
从表1和2所示结果显而易见,比较例分别具有明显低的拾取成功率,且抗回流可靠性评估差。与此相反,根据本发明的示例的所有评估特性都是优良的。
工业实用性
本发明优选作为涉及通过倒装片封装生产半导体器件的生产方法;具体而言,从研磨具有金属电极的晶片的背面的步骤到划片与/或管芯接合步骤。
此外,本发明的晶片加工带可优选用于生产半导体器件的上述方法。
已经结合实施方案描述了本发明,除非另外说明,本发明不受说明书的任何细节限制,而是由权利要求界定的精神和范围定义。
Claims (10)
1.一种晶片加工带,包括形成于基底膜上的可移除的粘合剂层与粘接剂层,其中所述带用于涉及如下步骤的工艺:
在所述带粘合到晶片电路基板的状态下,研磨具有凸起型金属电极的晶片电路基板的背面,并将所述晶片电路基板划片成芯片;以及
拾取所述芯片,其中在该粘接剂层从基底膜剥离而接合到各个芯片的状态下拾取所述芯片。
2.根据权利要求1的晶片加工带,其中在所述拾取步骤中,在所述可移除的粘合剂层与基底膜接合且仅所述粘接剂层与管芯接合的状态下,所述芯片从可移除的粘合剂层剥离。
3.根据权利要求2的晶片加工带,其中所述可移除的粘合剂层包含丙烯酸型共聚物为主要成分且凝胶比例为60%以上。
4.根据权利要求1至3的任一的晶片加工带,其中所述可移除的粘合剂层为可辐射固化。
5.根据权利要求1至3的任一的晶片加工带,其中所述粘接剂层为可热固化。
6.根据权利要求1至3的任一的晶片加工带,其中所述粘接剂层包含作为主要成分的丙烯酸树脂、环氧树脂或聚酰亚胺树脂中的至少一种,且在25℃时的贮藏弹性模量为1MPa以上,在80℃时的贮藏弹性模量为0.05MPa以下。
7.根据权利要求1至3的任一的晶片加工带,其中所述可移除的粘合剂层包含丙烯酸型共聚物作为其主要成分,所述丙烯酸型共聚物主要成分由这样的丙烯酸型共聚物组成,其在主链上至少具有包含可辐射固化的碳-碳双键的基团,并包含羟基和羧基的基团。
8.通过使用根据权利要求1的晶片加工带的半导体器件制造方法,包括步骤:
将所述带粘合到具有凸起型金属电极的晶片电路基板;
研磨所述晶片电路基板的背面;
将所述晶片电路基板划片成芯片;
拾取所述芯片;以及
将所述拾取的芯片倒装片接合到基底上。
9.根据权利要求8的半导体器件制造方法,进一步包括:在研磨步骤之后且划片步骤之前,将用于划片可移除的粘合带进一步粘合到所述晶片加工带,其中所述晶片加工带已粘合到具有凸起型金属电极的晶片电路基板。
10.根据权利要求8的半导体器件制造方法,进一步包括:在研磨步骤之后且划片步骤之前,将用于划片可移除的粘合带粘合到具有凸起型金属电极的所述晶片电路基板的背面,所述晶片电路基板已粘合了所述晶片加工带。
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US20070141330A1 (en) | 2007-06-21 |
JP4776188B2 (ja) | 2011-09-21 |
TW200613502A (en) | 2006-05-01 |
US8043698B2 (en) | 2011-10-25 |
CN1993809B (zh) | 2010-05-05 |
TWI338028B (en) | 2011-03-01 |
MY147216A (en) | 2012-11-14 |
KR20070033046A (ko) | 2007-03-23 |
JP2006049482A (ja) | 2006-02-16 |
WO2006014003A1 (ja) | 2006-02-09 |
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