CN1723741B - 发光装置、制造装置、成膜方法及清洁方法 - Google Patents

发光装置、制造装置、成膜方法及清洁方法 Download PDF

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CN1723741B
CN1723741B CN200380105723.8A CN200380105723A CN1723741B CN 1723741 B CN1723741 B CN 1723741B CN 200380105723 A CN200380105723 A CN 200380105723A CN 1723741 B CN1723741 B CN 1723741B
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film
vapor deposition
substrate
chamber
organic compound
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CN1723741A (zh
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山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN200380105723.8A 2002-12-12 2003-12-05 发光装置、制造装置、成膜方法及清洁方法 Expired - Fee Related CN1723741B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002361320 2002-12-12
JP361320/2002 2002-12-12
JP379235/2002 2002-12-27
JP2002379235 2002-12-27
PCT/JP2003/015617 WO2004054325A1 (ja) 2002-12-12 2003-12-05 発光装置、製造装置、成膜方法、およびクリーニング方法

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CN1723741A CN1723741A (zh) 2006-01-18
CN1723741B true CN1723741B (zh) 2012-09-05

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US (2) US7583020B2 (enExample)
JP (1) JP5072184B2 (enExample)
CN (1) CN1723741B (enExample)
AU (1) AU2003289212A1 (enExample)
TW (1) TW200415952A (enExample)
WO (1) WO2004054325A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3152815A1 (fr) * 2023-09-12 2025-03-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé et dispositif pour l’homogeneisation d’un flux de gaz incident sur une surface dans une enceinte a vide

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4052155B2 (ja) * 2003-03-17 2008-02-27 ウシオ電機株式会社 極端紫外光放射源及び半導体露光装置
US7333072B2 (en) * 2003-03-24 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device
US7748344B2 (en) * 2003-11-06 2010-07-06 Axcelis Technologies, Inc. Segmented resonant antenna for radio frequency inductively coupled plasmas
US7421973B2 (en) * 2003-11-06 2008-09-09 Axcelis Technologies, Inc. System and method for performing SIMOX implants using an ion shower
JP4393402B2 (ja) * 2004-04-22 2010-01-06 キヤノン株式会社 有機電子素子の製造方法および製造装置
GB0415560D0 (en) * 2004-07-12 2004-08-11 Boc Group Plc Pump cleaning
JP2006085933A (ja) * 2004-09-14 2006-03-30 Toshiba Matsushita Display Technology Co Ltd 表示装置の製造方法及び製造装置
JP4678169B2 (ja) * 2004-10-18 2011-04-27 セイコーエプソン株式会社 有機ｅｌ素子及びその製造方法、並びに有機ｅｌ装置
JP5071699B2 (ja) * 2004-11-04 2012-11-14 独立行政法人物質・材料研究機構 フォトカソード型電子線源の陰極先端部への高量子効率物質の局所被覆装置
JP2006278068A (ja) * 2005-03-28 2006-10-12 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法、及び有機電界発光素子
JP2006278067A (ja) * 2005-03-28 2006-10-12 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法、及び有機電界発光素子
JP5568729B2 (ja) * 2005-09-06 2014-08-13 国立大学法人東北大学 成膜装置および成膜方法
EP1953843B1 (en) * 2005-10-31 2012-12-05 Konica Minolta Holdings, Inc. Organic electroluminescent device, display and illuminating device
US7654010B2 (en) * 2006-02-23 2010-02-02 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
US20070212816A1 (en) * 2006-03-08 2007-09-13 Tokyo Electron Limited Substrate processing system
US20070231490A1 (en) * 2006-03-29 2007-10-04 Eastman Kodak Company Uniformly vaporizing metals and organic materials
JP2007294398A (ja) * 2006-03-30 2007-11-08 Canon Inc 有機デバイスの製造方法
JP2007328999A (ja) * 2006-06-07 2007-12-20 Tokyo Electron Ltd 発光素子の製造装置および発光素子の製造方法
EP1868255B1 (en) * 2006-06-14 2011-10-19 Novaled AG Method for surface processing in a vacuum environment
KR100769833B1 (ko) * 2006-08-14 2007-10-23 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
JP4697162B2 (ja) * 2007-03-16 2011-06-08 セイコーエプソン株式会社 表面処理装置及び方法
KR20080102898A (ko) * 2007-05-22 2008-11-26 삼성전자주식회사 백색-발광 유기 발광 소자, 이의 제조 방법 및 인-라인증착 시스템용 증착기
JP5017584B2 (ja) * 2007-08-02 2012-09-05 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
US9876187B2 (en) 2007-09-27 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic appliance
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
JP4564078B2 (ja) * 2008-04-28 2010-10-20 東京エレクトロン株式会社 基板処理装置
KR100994118B1 (ko) 2009-01-13 2010-11-15 삼성모바일디스플레이주식회사 유기 발광 소자 및 그 제조 방법
WO2010092931A1 (ja) * 2009-02-16 2010-08-19 凸版印刷株式会社 有機エレクトロルミネッセンスディスプレイ及びその製造方法
EP2230703A3 (en) * 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
CN102356697B (zh) * 2009-03-18 2014-05-28 株式会社半导体能源研究所 照明装置
KR102180761B1 (ko) * 2009-09-24 2020-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5603219B2 (ja) * 2009-12-28 2014-10-08 キヤノンアネルバ株式会社 薄膜形成装置
JP2010140917A (ja) * 2010-03-25 2010-06-24 Fujifilm Corp 有機電界発光素子
JP5560147B2 (ja) * 2010-09-13 2014-07-23 東京エレクトロン株式会社 成膜方法及び半導体装置の製造方法
KR101519916B1 (ko) * 2011-04-07 2015-05-13 엘지디스플레이 주식회사 유기 전계 발광 표시 장치 및 그의 제조 방법
KR101830790B1 (ko) 2011-06-30 2018-04-05 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 평판 표시 장치
KR101896348B1 (ko) * 2011-07-22 2018-09-07 삼성전자주식회사 칩 온 필름 패키지 및 이를 포함하는 장치 어셈블리
US20130137273A1 (en) * 2011-11-28 2013-05-30 Infineon Technologies Ag Semiconductor Processing System
JP5856839B2 (ja) * 2011-12-27 2016-02-10 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
KR101938365B1 (ko) * 2012-07-31 2019-04-12 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착량 측정 방법
US12302698B2 (en) 2012-07-31 2025-05-13 Jdi Design And Development G.K. Display unit with moisture proof film outside of seal section and electronic apparatus with said display unit
JP6142151B2 (ja) * 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
KR101990555B1 (ko) * 2012-12-24 2019-06-19 삼성디스플레이 주식회사 박막봉지 제조장치 및 박막봉지 제조방법
KR20140130972A (ko) * 2013-05-02 2014-11-12 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR102075527B1 (ko) 2013-05-16 2020-02-11 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
JP2015133444A (ja) * 2014-01-15 2015-07-23 株式会社東芝 半導体製造装置および半導体装置の製造方法
US20150206798A1 (en) * 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect Structure And Method of Forming
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
CN104532192B (zh) * 2014-12-19 2018-01-30 深圳市华星光电技术有限公司 蒸镀装置
KR102369314B1 (ko) * 2015-06-16 2022-03-04 삼성디스플레이 주식회사 증착 장치
CN105137660A (zh) * 2015-09-25 2015-12-09 京东方科技集团股份有限公司 一种光配向膜杂质去除装置和方法
CN105401125B (zh) * 2015-12-15 2018-09-04 深圳市华星光电技术有限公司 用于有机电激光显示的基板的蒸镀方法和蒸镀装置
CN105624611B (zh) * 2016-03-29 2018-04-24 苏州方昇光电股份有限公司 一种旋转式有机材料蒸发装置
CN106654061B (zh) * 2016-12-26 2019-04-02 武汉华星光电技术有限公司 一种用于发光二极管封装的紫外线照射装置
WO2018119735A1 (zh) * 2016-12-28 2018-07-05 深圳市柔宇科技有限公司 蒸镀机对位系统及蒸镀机对位系统选取方法
EP3366804B1 (en) * 2017-02-22 2022-05-11 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
JP6825956B2 (ja) * 2017-03-28 2021-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法および紫外線照射手段の選択方法
JP7404217B2 (ja) * 2017-04-28 2023-12-25 アプライド マテリアルズ インコーポレイテッド Ｏｌｅｄデバイスの製造に使用される真空システムを洗浄するための方法、ｏｌｅｄデバイスを製造するための基板の上での真空堆積のための方法、及びｏｌｅｄデバイスを製造するための基板の上での真空堆積のための装置
JP6461235B2 (ja) * 2017-05-22 2019-01-30 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法
CN107123754A (zh) 2017-06-14 2017-09-01 京东方科技集团股份有限公司 一种有机电致发光器件及制备方法、蒸镀设备
US11075079B2 (en) * 2017-11-21 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Directional deposition for semiconductor fabrication
KR101943268B1 (ko) * 2018-04-26 2019-01-28 캐논 톡키 가부시키가이샤 진공 시스템, 기판 반송 시스템, 전자 디바이스의 제조 장치 및 전자 디바이스의 제조 방법
US11239060B2 (en) * 2018-05-29 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ion beam etching chamber with etching by-product redistributor
KR20190140373A (ko) * 2018-06-11 2019-12-19 캐논 톡키 가부시키가이샤 기판 회전 장치 및 기판 회전 방법
TWI684824B (zh) * 2018-06-13 2020-02-11 帆宣系統科技股份有限公司 金屬遮罩清潔裝置及金屬遮罩清潔方法
KR102662722B1 (ko) 2018-09-17 2024-05-02 삼성디스플레이 주식회사 표시장치
CN109609909B (zh) * 2019-01-03 2021-01-26 京东方科技集团股份有限公司 蒸镀方法及系统
JP6905149B2 (ja) * 2019-02-14 2021-07-21 株式会社日立ハイテク 半導体製造装置
KR102184356B1 (ko) * 2019-02-27 2020-11-30 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
CN111349971B (zh) * 2020-03-30 2021-04-23 福建北电新材料科技有限公司 晶体原料盛载装置及晶体生长装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US20020009538A1 (en) * 2000-05-12 2002-01-24 Yasuyuki Arai Method of manufacturing a light-emitting device
CN1428817A (zh) * 2001-12-12 2003-07-09 株式会社半导体能源研究所 膜形成装置和膜形成方法以及清洁方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB741067A (en) 1952-09-16 1955-11-23 Metallgesellschaft Ag Process for the production of organic silicon compounds
US3980044A (en) * 1972-03-06 1976-09-14 Balzers Patent Und Beteiligungs Ag Apparatus for depositing thin coats by vaporization under the simultaneous action of an ionized gas
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4439463A (en) * 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
JPS6130661A (ja) 1984-07-19 1986-02-12 Matsushita Electric Ind Co Ltd 被膜形成装置
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPS61136669A (ja) * 1984-12-07 1986-06-24 Hitachi Ltd 有機薄膜形成方法及び有機薄膜形成装置
JPS61235553A (ja) 1985-04-12 1986-10-20 Citizen Watch Co Ltd 有色ｉｐパタ−ン被膜の形成方法
US5039561A (en) * 1986-08-25 1991-08-13 Minnesota Mining And Manufacturing Company Method for preparing an article having surface layer of uniformly oriented, crystalline, organic microstructures
US4868003A (en) * 1986-11-26 1989-09-19 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4987851A (en) * 1988-01-12 1991-01-29 Kabushiki Kaisha Toshiba Apparatus for forming organic thin film
JPH0384892A (ja) * 1989-08-25 1991-04-10 Seiko Epson Corp 発光素子
JP3069139B2 (ja) * 1990-03-16 2000-07-24 旭化成工業株式会社 分散型電界発光素子
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
JPH04236759A (ja) 1991-01-19 1992-08-25 Hitachi Cable Ltd 蒸着装置
JP3049799B2 (ja) 1991-02-27 2000-06-05 ソニー株式会社 プラズマ処理装置
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法
US5355832A (en) * 1992-12-15 1994-10-18 Advanced Surface Technology, Inc. Polymerization reactor
JPH0762526A (ja) 1993-08-19 1995-03-07 Mitsubishi Chem Corp 有機電界発光素子の製造方法
KR960704343A (ko) * 1994-06-09 1996-08-31 이데이 노부유키 질소도핑 ii-vi족 화합물반도체의 성막방법
JPH08102360A (ja) * 1994-09-29 1996-04-16 Toyota Central Res & Dev Lab Inc 有機無機複合薄膜型電界発光素子
JPH08319586A (ja) * 1995-05-24 1996-12-03 Nec Yamagata Ltd 真空処理装置のクリーニング方法
US6106627A (en) * 1996-04-04 2000-08-22 Sigma Laboratories Of Arizona, Inc. Apparatus for producing metal coated polymers
JPH09279135A (ja) * 1996-04-17 1997-10-28 Toyota Central Res & Dev Lab Inc 電界発光素子
KR100512670B1 (ko) * 1996-05-15 2005-09-07 세이코 엡슨 가부시키가이샤 박막 디바이스 제조 방법, 박막 트랜지스터 제조 방법, 및전자 기기 제조 방법
US6037712A (en) * 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
JP3631845B2 (ja) * 1996-06-11 2005-03-23 セイコープレシジョン株式会社 有機ｅｌ素子
DE19680845D2 (de) * 1996-11-01 1999-03-18 Theva Duennschicht Gmbh Vorrichtung zur Herstellung oxidischer Dünnschichten
JP4059946B2 (ja) 1996-12-06 2008-03-12 株式会社アルバック 有機薄膜形成装置及び有機材料の再利用方法
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JPH10294181A (ja) 1997-02-24 1998-11-04 Toray Ind Inc 有機電界発光素子およびその製造方法
TW411458B (en) * 1997-05-08 2000-11-11 Matsushita Electric Industrial Co Ltd Apparatus and process for production of optical recording medium
US6271498B1 (en) * 1997-06-23 2001-08-07 Nissin Electric Co., Ltd Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus
JPH1161386A (ja) * 1997-08-22 1999-03-05 Fuji Electric Co Ltd 有機薄膜発光素子の成膜装置
US6203898B1 (en) * 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
TW475078B (en) * 1997-09-30 2002-02-01 Toshiba Corp Liquid crystal display device and production of liquid crystal display device
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JPH11307258A (ja) 1998-04-21 1999-11-05 Tdk Corp 有機ｅｌ素子
US6114055A (en) * 1998-06-01 2000-09-05 Motorola, Inc. Organic electroluminescent device with continuous organic medium containing rubrene
JP2000048962A (ja) 1998-07-24 2000-02-18 Tdk Corp 有機ｅｌ素子
JP2000068067A (ja) 1998-08-13 2000-03-03 Tdk Corp 有機ｅｌ素子
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
CA2343105C (en) 1998-09-10 2004-09-28 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
TW449949B (en) 1998-09-10 2001-08-11 Rohm Co Ltd Light emitting semiconductor element and method for manufacturing the same
JP3900724B2 (ja) * 1999-01-11 2007-04-04 セイコーエプソン株式会社 有機ｅｌ素子の製造方法および有機ｅｌ表示装置
TW469484B (en) 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
JP3734239B2 (ja) 1999-04-02 2006-01-11 キヤノン株式会社 有機膜真空蒸着用マスク再生方法及び装置
JP2000328229A (ja) 1999-05-19 2000-11-28 Canon Inc 真空蒸着装置
JP2000355769A (ja) * 1999-06-14 2000-12-26 Mitsubishi Electric Corp クリーニングガスの除害方法および除害装置
US6150536A (en) * 1999-07-08 2000-11-21 International Business Machines Corporation Dye doped organic-inorganic hybrid materials
JP2001149877A (ja) 1999-11-29 2001-06-05 Japan Steel Works Ltd:The 処理装置内のクリーニング方法及び装置
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
JP2001196178A (ja) 2000-01-11 2001-07-19 Fuji Photo Film Co Ltd 発光素子
WO2001065590A2 (en) * 2000-03-02 2001-09-07 Tokyo Electron Limited Esrf source for ion plating epitaxial deposition
JP4077131B2 (ja) 2000-03-23 2008-04-16 日本放送協会 フルカラー薄膜ｅｌディスプレイパネル
JP3509693B2 (ja) * 2000-04-05 2004-03-22 トヨタ自動車株式会社 有機ｅｌ素子の製造方法
US20020011205A1 (en) * 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP4597421B2 (ja) * 2000-05-12 2010-12-15 株式会社半導体エネルギー研究所 発光装置の作製方法
CN101397649B (zh) * 2001-02-01 2011-12-28 株式会社半导体能源研究所 能够将有机化合物沉积在衬底上的装置
JP4101522B2 (ja) * 2001-02-01 2008-06-18 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
US7432116B2 (en) * 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
GB0125617D0 (en) * 2001-10-25 2001-12-19 Univ Manchester Photostabilised organic material
JP4294305B2 (ja) * 2001-12-12 2009-07-08 株式会社半導体エネルギー研究所 成膜装置および成膜方法
US7015640B2 (en) * 2002-09-11 2006-03-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US20020009538A1 (en) * 2000-05-12 2002-01-24 Yasuyuki Arai Method of manufacturing a light-emitting device
CN1428817A (zh) * 2001-12-12 2003-07-09 株式会社半导体能源研究所 膜形成装置和膜形成方法以及清洁方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平9-328680A 1997.12.22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3152815A1 (fr) * 2023-09-12 2025-03-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé et dispositif pour l’homogeneisation d’un flux de gaz incident sur une surface dans une enceinte a vide
WO2025056858A1 (fr) * 2023-09-12 2025-03-20 Commissariat à l'énergie atomique et aux énergies alternatives Procédé et dispositif pour l'homogeneisation d'un flux de gaz incident sur une surface dans une enceinte a vide

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