CN1591192B - 光刻装置和器件制造方法 - Google Patents

光刻装置和器件制造方法 Download PDF

Info

Publication number
CN1591192B
CN1591192B CN2004100682666A CN200410068266A CN1591192B CN 1591192 B CN1591192 B CN 1591192B CN 2004100682666 A CN2004100682666 A CN 2004100682666A CN 200410068266 A CN200410068266 A CN 200410068266A CN 1591192 B CN1591192 B CN 1591192B
Authority
CN
China
Prior art keywords
liquid
immersion liquid
projection apparatus
lithographic projection
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2004100682666A
Other languages
English (en)
Chinese (zh)
Other versions
CN1591192A (zh
Inventor
M·M·T·M·迪里奇斯
S·N·L·当德斯
J·H·W·贾科布斯
H·詹森
E·R·鲁普斯特拉
J·J·S·M·梅坦斯
M·K·斯塔文加
B·斯特里克
M·C·M·维哈根
L·塞恩蒂恩斯-格鲁达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN1591192A publication Critical patent/CN1591192A/zh
Application granted granted Critical
Publication of CN1591192B publication Critical patent/CN1591192B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0031—Degasification of liquids by filtration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02—Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/025—Reverse osmosis; Hyperfiltration
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C02F1/283—Treatment of water, waste water, or sewage by sorption using coal, charred products, or inorganic mixtures containing them
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Public Health (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Urology & Nephrology (AREA)
CN2004100682666A 2003-08-29 2004-08-27 光刻装置和器件制造方法 Expired - Fee Related CN1591192B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03255376 2003-08-29
EP03255376.0 2003-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010101140186A Division CN101872130B (zh) 2003-08-29 2004-08-27 光刻投射装置

Publications (2)

Publication Number Publication Date
CN1591192A CN1591192A (zh) 2005-03-09
CN1591192B true CN1591192B (zh) 2010-10-06

Family

ID=34400571

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2004100682666A Expired - Fee Related CN1591192B (zh) 2003-08-29 2004-08-27 光刻装置和器件制造方法
CN2010101140186A Expired - Fee Related CN101872130B (zh) 2003-08-29 2004-08-27 光刻投射装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2010101140186A Expired - Fee Related CN101872130B (zh) 2003-08-29 2004-08-27 光刻投射装置

Country Status (8)

Country Link
US (6) US7733459B2 (cg-RX-API-DMAC10.html)
EP (3) EP1510872B1 (cg-RX-API-DMAC10.html)
JP (5) JP2005079584A (cg-RX-API-DMAC10.html)
KR (1) KR100659257B1 (cg-RX-API-DMAC10.html)
CN (2) CN1591192B (cg-RX-API-DMAC10.html)
DE (1) DE602004029970D1 (cg-RX-API-DMAC10.html)
SG (1) SG109609A1 (cg-RX-API-DMAC10.html)
TW (1) TWI245163B (cg-RX-API-DMAC10.html)

Families Citing this family (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP3226073A3 (en) 2003-04-09 2017-10-11 Nikon Corporation Exposure method and apparatus, and method for fabricating device
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
SG185136A1 (en) * 2003-04-11 2012-11-29 Nikon Corp Cleanup method for optics in immersion lithography
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI442694B (zh) * 2003-05-30 2014-06-21 Ａｓｍｌ荷蘭公司 微影裝置及元件製造方法
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
EP2738792B1 (en) * 2003-06-13 2015-08-05 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101931923B1 (ko) 2003-06-19 2018-12-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101242886B1 (ko) * 2003-08-29 2013-03-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
TWI610342B (zh) * 2003-09-29 2018-01-01 尼康股份有限公司 曝光裝置及曝光方法、以及元件製造方法
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
TWI598934B (zh) * 2003-10-09 2017-09-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
KR101275464B1 (ko) 2003-10-22 2013-06-17 가부시키가이샤 니콘 노광 장치, 노광 방법, 디바이스의 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
TWI512335B (zh) 2003-11-20 2015-12-11 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
EP3370115A1 (en) 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
WO2005057635A1 (ja) * 2003-12-15 2005-06-23 Nikon Corporation 投影露光装置及びステージ装置、並びに露光方法
KR101941351B1 (ko) 2003-12-15 2019-01-22 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7697110B2 (en) * 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101377815B1 (ko) * 2004-02-03 2014-03-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI614795B (zh) 2004-02-06 2018-02-11 Nikon Corporation 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
JP3981368B2 (ja) * 2004-05-17 2007-09-26 松下電器産業株式会社 パターン形成方法
KR101368523B1 (ko) 2004-06-04 2014-02-27 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
CN103605262B (zh) * 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
KR101339887B1 (ko) * 2004-12-06 2013-12-10 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20070095399A (ko) * 2005-01-25 2007-09-28 제이에스알 가부시끼가이샤 액침형 노광 시스템, 액침형 노광용 액체의 리사이클 방법및 공급 방법
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4072543B2 (ja) * 2005-03-18 2008-04-09 キヤノン株式会社 液浸露光装置及びデバイス製造方法
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7315033B1 (en) * 2005-05-04 2008-01-01 Advanced Micro Devices, Inc. Method and apparatus for reducing biological contamination in an immersion lithography system
KR101504765B1 (ko) 2005-05-12 2015-03-30 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US8253924B2 (en) * 2005-05-24 2012-08-28 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US20070058263A1 (en) * 2005-09-13 2007-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for immersion lithography
US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP2009516927A (ja) * 2005-11-23 2009-04-23 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー アルカン液浸液を再循環させるための装置、および使用方法
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
WO2007066692A1 (ja) 2005-12-06 2007-06-14 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
WO2007072818A1 (ja) * 2005-12-19 2007-06-28 Nikon Corporation 液体製造装置、液浸露光装置、及びデバイス製造方法
US7714980B2 (en) * 2006-02-15 2010-05-11 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure system
JP2007242774A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
JP2007286162A (ja) * 2006-04-13 2007-11-01 Nikon Corp 液浸顕微鏡装置
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
JP2009545136A (ja) * 2006-07-21 2009-12-17 インテグリス・インコーポレーテッド 浸漬流体を調整するための装置および方法
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
US20080204687A1 (en) * 2007-02-23 2008-08-28 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101423611B1 (ko) * 2008-01-16 2014-07-30 삼성전자주식회사 기판 처리 장치, 노광 장치 및 클리닝 툴의 세정 방법
NL1036432A1 (nl) * 2008-01-23 2009-07-27 Asml Holding Nv An immersion lithographic apparatus with immersion fluid re-circulating system.
JP2009218344A (ja) * 2008-03-10 2009-09-24 Canon Inc 露光装置および露光方法
NL1036766A1 (nl) * 2008-04-25 2009-10-27 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus.
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
US12350627B2 (en) 2013-02-28 2025-07-08 Aqua Membranes, Inc. Permeate flow patterns
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
KR102101350B1 (ko) * 2013-03-15 2020-04-17 삼성전자주식회사 파티클 카운터 및 그를 구비한 임멀젼 노광 설비
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
DE102014004511A1 (de) * 2014-03-28 2015-10-01 Carl Zeiss Microscopy Gmbh Verfahren zum Beenden mikroskopischer Anwendungen mit einem Immersionsobjektiv
CN106164777B (zh) * 2014-04-14 2019-06-18 Asml荷兰有限公司 光刻过程的优化流程
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
DE102015218053A1 (de) * 2015-09-21 2017-03-23 Eta Plus Electronic Gmbh Vorrichtung zur UV-Bestrahlung eines strömenden Mediums
US11358172B2 (en) * 2015-09-24 2022-06-14 Suss Microtec Photomask Equipment Gmbh & Co. Kg Method for treating substrates with an aqueous liquid medium exposed to UV-radiation
US11458214B2 (en) 2015-12-21 2022-10-04 Delta Faucet Company Fluid delivery system including a disinfectant device
CN109952197A (zh) 2016-09-20 2019-06-28 阿夸曼布拉尼斯有限责任公司 渗透物流动图型
KR102033982B1 (ko) 2016-11-19 2019-10-18 아쿠아 멤브레인스 엘엘씨 나선형 권취 요소를 위한 간섭 패턴
JP7086098B2 (ja) 2017-04-12 2022-06-17 アクア メンブレインズ，インコーポレイテッド 濾過巻き要素のための段階的なスペーサ
CN206881955U (zh) * 2017-04-17 2018-01-16 福建西河卫浴科技有限公司 一种离心散水结构及花洒
CN110520210A (zh) 2017-04-20 2019-11-29 阿夸曼布拉尼斯公司 用于螺旋卷绕元件的不嵌套、不变形图案
WO2018195367A1 (en) 2017-04-20 2018-10-25 Aqua Membranes Llc Mixing-promoting spacer patterns for spiral-wound elements
JP7167140B2 (ja) 2017-10-13 2022-11-08 アクア メンブレインズ，インコーポレイテッド スパイラル型巻線要素用の橋梁支持及び低減した供給スペーサ
WO2019111802A1 (ja) 2017-12-04 2019-06-13 株式会社島津製作所 ファインバブル除去方法及びファインバブル除去装置、並びに、気泡径分布測定方法及び気泡径分布測定装置
CN113631243B (zh) 2019-01-27 2024-03-29 阿夸曼布拉尼斯公司 复合膜
KR20220055466A (ko) 2019-08-06 2022-05-03 아쿠아 멤브레인스 인코포레이티드 나선형-권취 요소를 위한 바람직한 유동 경로
WO2021207256A1 (en) 2020-04-07 2021-10-14 Aqua Membranes Inc. Independent spacers and methods
JP2023535146A (ja) 2020-07-14 2023-08-16 アクア メンブレインズ，インコーポレイテッド クロスフロー濾過における可変速度パターン
CN112650031B (zh) * 2020-12-25 2024-07-23 浙江启尔机电技术有限公司 浸液供给装置、光刻系统和浸液品质监测方法
EP4457013A4 (en) 2021-12-28 2026-03-04 Aqua Membranes Inc High rejection spiral wound elements with protective features

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6423223B1 (en) * 2000-08-31 2002-07-23 Donald A. Northcut Multi-element, reverse osmosis, liquid filter system with flushing and filtering circuits
CN1423147A (zh) * 2001-12-05 2003-06-11 株式会社尼康 投影光学系统和具有该投影光学系统的曝光装置

Family Cites Families (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE206607C (cg-RX-API-DMAC10.html)
DE242880C (cg-RX-API-DMAC10.html)
DE221563C (cg-RX-API-DMAC10.html)
DE224448C (cg-RX-API-DMAC10.html)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPH0747157B2 (ja) 1985-02-15 1995-05-24 株式会社日立製作所 超純水製造装置
JPS61187984U (cg-RX-API-DMAC10.html) 1985-05-15 1986-11-22
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (cg-RX-API-DMAC10.html) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (cg-RX-API-DMAC10.html) 1986-01-24 1987-08-01
JPS63108724A (ja) * 1986-10-27 1988-05-13 Japan Organo Co Ltd 半導体洗浄用超純水の製造方法
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0517223Y2 (cg-RX-API-DMAC10.html) 1987-01-05 1993-05-10
JPS63157419U (cg-RX-API-DMAC10.html) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5296891A (en) 1990-05-02 1994-03-22 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device
US5053060A (en) * 1990-06-29 1991-10-01 Molecular Devices Corporation Device and method for degassing, gassing and debubbling liquids
US5425227A (en) * 1990-06-29 1995-06-20 Zinser Textilmaschinen Gmbh Protecting a textile process liquid before application to a filament
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH05136114A (ja) * 1991-11-08 1993-06-01 Tadahiro Omi 超純水供給装置及び基体洗浄方法並びに超純水製造装置及び超純水製造方法
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP2783376B2 (ja) * 1993-03-15 1998-08-06 株式会社日立サイエンスシステムズ 自動化学分析装置
JP3390203B2 (ja) * 1993-03-23 2003-03-24 株式会社日本フォトサイエンス 紫外線殺菌液の菌の光回復阻止法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3426072B2 (ja) 1996-01-17 2003-07-14 オルガノ株式会社 超純水製造装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
KR100512450B1 (ko) 1996-12-24 2006-01-27 에이에스엠엘 네델란즈 비.브이. 두개의물체홀더를가진이차원적으로안정화된위치설정장치와이런위치설정장치를구비한리소그래픽장치
AU2048097A (en) 1997-01-29 1998-08-18 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5938922A (en) * 1997-08-19 1999-08-17 Celgard Llc Contactor for degassing liquids
US5997745A (en) * 1998-04-08 1999-12-07 Zenon Environmental Inc. Method for producing high purity water using triple pass reverse osmosis (TPRO)
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
WO1999031717A1 (en) 1997-12-12 1999-06-24 Nikon Corporation Projection exposure method and projection aligner
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000051865A (ja) * 1998-08-06 2000-02-22 Kurita Water Ind Ltd 電気再生型脱塩装置
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000087579A (ja) * 1998-09-11 2000-03-28 Toshiba Corp 海洋深層水の多目的利用プラント
JP2000266763A (ja) * 1999-03-18 2000-09-29 Hitachi Ltd 自動分析装置
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001153855A (ja) * 1999-11-29 2001-06-08 Japan Organo Co Ltd 不純物濃度分析方法およびシステム
TW546551B (en) * 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
KR100449460B1 (ko) * 2000-01-18 2004-09-22 아사히 가세이 가부시키가이샤 현탁수의 막 여과 정화 방법
JP2001272604A (ja) 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
JP3895540B2 (ja) * 2000-06-21 2007-03-22 三徳化学工業株式会社 精製過酸化水素水の製造方法
JP2004123762A (ja) 2000-06-30 2004-04-22 Nippon Zeon Co Ltd 洗浄剤および洗浄方法
JP4447126B2 (ja) * 2000-07-10 2010-04-07 野村マイクロ・サイエンス株式会社 超純水製造装置
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6846409B2 (en) * 2000-09-13 2005-01-25 Mykrolis Corporation Liquid filtration device
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002273442A (ja) * 2001-03-23 2002-09-24 Kurita Water Ind Ltd 純水製造装置および純水製造方法
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
JP2002355683A (ja) * 2001-05-29 2002-12-10 Kurita Water Ind Ltd 超純水製造方法及び超純水製造装置
WO2003001526A1 (en) * 2001-06-20 2003-01-03 Matsushita Electric Industrial Co., Ltd. Cleaning method for magnetic transfer carrier
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
US6607668B2 (en) * 2001-08-17 2003-08-19 Technology Ventures, Inc. Water purifier
JP4661009B2 (ja) * 2001-09-04 2011-03-30 栗田工業株式会社 超純水製造システム
AT410406B (de) 2001-09-17 2003-04-25 Andritz Ag Maschf Verfahren und vorrichtung zur belüftung einer flüssigkeit mit gas
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
JP3849766B2 (ja) * 2001-10-26 2006-11-22 栗田工業株式会社 有機物含有水の処理装置及び処理方法
JP3878452B2 (ja) * 2001-10-31 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2006502558A (ja) 2001-11-07 2006-01-19 アプライド　マテリアルズ　インコーポレイテッド 光学式スポット格子アレイ印刷装置
JP2003145146A (ja) * 2001-11-12 2003-05-20 Hitachi Ltd 超純水の製造方法及びその製造装置
JP4159823B2 (ja) * 2001-12-11 2008-10-01 野村マイクロ・サイエンス株式会社 超純水製造方法
JP3572357B2 (ja) 2001-12-17 2004-09-29 防衛庁技術研究本部長 ハンガ装置
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6858145B2 (en) * 2002-09-12 2005-02-22 Chemitreat Pte Ltd Method of removing organic impurities from water
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121829A1 (en) 2002-11-29 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101139266B1 (ko) * 2002-12-03 2012-05-15 가부시키가이샤 니콘 오염 물질 제거 방법 및 장치, 그리고 노광 방법 및 장치
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
AU2003289271A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
KR101085372B1 (ko) 2002-12-10 2011-11-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
JP4608876B2 (ja) * 2002-12-10 2011-01-12 株式会社ニコン 露光装置及びデバイス製造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
WO2004053959A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 光学素子及びその光学素子を用いた投影露光装置
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
CN101872135B (zh) 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
EP1571696A4 (en) 2002-12-10 2008-03-26 Nikon Corp EXPOSITION EQUIPMENT AND MANUFACTURING METHOD THEREFOR
KR20120127755A (ko) 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
EP1571701A4 (en) * 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
GB0229345D0 (en) 2002-12-17 2003-01-22 Safe T Ltd Hollow needle applicators
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
KR101921572B1 (ko) * 2003-02-26 2018-11-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
EP1612850B1 (en) * 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
KR101177330B1 (ko) * 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
SG2014015184A (en) 2003-04-10 2015-06-29 Nippon Kogaku Kk Environmental system including vacuum scavange for an immersion lithography apparatus
SG185136A1 (en) * 2003-04-11 2012-11-29 Nikon Corp Cleanup method for optics in immersion lithography
JP2004327638A (ja) 2003-04-24 2004-11-18 Matsushita Electric Ind Co Ltd 薄膜塗布装置
JP2004327747A (ja) 2003-04-25 2004-11-18 Matsushita Electric Ind Co Ltd 薬液塗布装置
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
US7485671B2 (en) * 2003-05-16 2009-02-03 Velocys, Inc. Process for forming an emulsion using microchannel process technology
JP5058550B2 (ja) 2003-05-23 2012-10-24 株式会社ニコン 露光装置、露光方法、デバイス製造方法、及び液体回収方法
JP2004356205A (ja) 2003-05-27 2004-12-16 Tadahiro Omi スキャン型露光装置および露光方法
TWI442694B (zh) * 2003-05-30 2014-06-21 Ａｓｍｌ荷蘭公司 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
ATE513309T1 (de) * 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
WO2005015315A2 (de) 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
KR101642670B1 (ko) 2003-07-28 2016-07-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6844206B1 (en) * 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
KR101477850B1 (ko) 2003-08-29 2014-12-30 가부시키가이샤 니콘 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1517184A1 (en) * 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101248325B1 (ko) 2003-09-26 2013-03-27 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
TWI311691B (en) * 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US20070105050A1 (en) 2003-11-05 2007-05-10 Dsm Ip Assets B.V. Method and apparatus for producing microchips
SG112033A1 (en) * 2003-11-07 2005-06-29 Asml Netherlands Bv Radiation detector
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4579927B2 (ja) 2003-12-23 2010-11-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 浸漬リソグラフィのための除去可能なペリクル
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2005209705A (ja) 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
KR101377815B1 (ko) 2004-02-03 2014-03-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101166007B1 (ko) 2004-02-10 2012-07-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 메인터넌스 방법 및노광 방법
JP2005236047A (ja) * 2004-02-19 2005-09-02 Canon Inc 露光装置及び方法
US7402377B2 (en) * 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
TW200613246A (en) * 2004-03-08 2006-05-01 Du Pont Highly purified liquid perfluoro-n-alkanes and method for preparing
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP3969457B2 (ja) 2004-05-21 2007-09-05 Ｊｓｒ株式会社 液浸露光用液体および液浸露光方法
KR20070029731A (ko) * 2004-06-01 2007-03-14 이 아이 듀폰 디 네모아 앤드 캄파니 자외선-투명성 알칸 및 진공 및 원자외선 응용에서 그의사용 방법
US7224456B1 (en) * 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
JP4655763B2 (ja) 2004-06-04 2011-03-23 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
CN103605262B (zh) 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP2006024882A (ja) 2004-06-11 2006-01-26 Matsushita Electric Ind Co Ltd 薄膜塗布装置および薄膜塗布方法ならびに液侵露光装置および液侵露光方法
JP4677833B2 (ja) 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
US7158208B2 (en) 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4740666B2 (ja) 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006024692A (ja) 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7050147B2 (en) 2004-07-08 2006-05-23 Asml Netherlands B.V. Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus
US7259827B2 (en) 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
US20060012788A1 (en) 2004-07-19 2006-01-19 Asml Netherlands B.V. Ellipsometer, measurement device and method, and lithographic apparatus and method
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP2006049757A (ja) 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4772306B2 (ja) 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
WO2006029824A2 (en) 2004-09-16 2006-03-23 Carl Zeiss Smt Ag Monitoring element for lithographic projection systems
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
EP1814144B1 (en) 2004-10-26 2012-06-06 Nikon Corporation Substrate processing method and device production system
US7156925B1 (en) * 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Using supercritical fluids to clean lenses and monitor defects
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
JP4487907B2 (ja) 2004-11-19 2010-06-23 株式会社ニコン メンテナンス方法、露光方法、露光装置及びデバイス製造方法
KR101339887B1 (ko) 2004-12-06 2013-12-10 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
TWI313485B (en) 2005-04-26 2009-08-11 Mitsui Chemicals Inc Liquid for immersion, purifying method of liquid for immersoin, and immersion exposure method
US7078575B1 (en) * 2005-06-09 2006-07-18 E. I. Du Pont De Nemours And Company Processes for preparing high purity polycyclic fluoroalkanes
JP2006352032A (ja) 2005-06-20 2006-12-28 Jsr Corp 液浸露光用液体および液浸露光方法
EP1895571A4 (en) 2005-06-21 2011-04-27 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD
US7262422B2 (en) 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
DE102005040828A1 (de) * 2005-08-25 2007-03-08 Carl Zeiss Jena Gmbh Verfahren und Vorrichtung zur Immersion und zur Reinigung der Frontlinse von Mikroskopobjektiven
US7372058B2 (en) 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP5036996B2 (ja) 2005-10-31 2012-09-26 東京応化工業株式会社 洗浄液および洗浄方法
JP2007123775A (ja) 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd 洗浄液および洗浄方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1036432A1 (nl) * 2008-01-23 2009-07-27 Asml Holding Nv An immersion lithographic apparatus with immersion fluid re-circulating system.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6423223B1 (en) * 2000-08-31 2002-07-23 Donald A. Northcut Multi-element, reverse osmosis, liquid filter system with flushing and filtering circuits
CN1423147A (zh) * 2001-12-05 2003-06-11 株式会社尼康 投影光学系统和具有该投影光学系统的曝光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US 2003/0005944 A1,权利要求23-27.

Also Published As

Publication number Publication date
EP1510872B1 (en) 2010-11-10
US20120013874A1 (en) 2012-01-19
DE602004029970D1 (de) 2010-12-23
EP2284613B1 (en) 2012-04-04
KR20050022317A (ko) 2005-03-07
EP1510872A3 (en) 2005-05-25
US20170139333A1 (en) 2017-05-18
TW200510923A (en) 2005-03-16
US8629971B2 (en) 2014-01-14
US8953144B2 (en) 2015-02-10
KR100659257B1 (ko) 2006-12-19
US20100265476A1 (en) 2010-10-21
US9581914B2 (en) 2017-02-28
JP5008635B2 (ja) 2012-08-22
EP1510872A2 (en) 2005-03-02
JP2011254092A (ja) 2011-12-15
TWI245163B (en) 2005-12-11
JP2009055062A (ja) 2009-03-12
JP5008636B2 (ja) 2012-08-22
US20050078286A1 (en) 2005-04-14
US7733459B2 (en) 2010-06-08
EP2256555A1 (en) 2010-12-01
US20150205214A1 (en) 2015-07-23
SG109609A1 (en) 2005-03-30
CN101872130B (zh) 2012-10-03
CN1591192A (zh) 2005-03-09
CN101872130A (zh) 2010-10-27
JP5008550B2 (ja) 2012-08-22
US9025127B2 (en) 2015-05-05
JP2009055061A (ja) 2009-03-12
EP2256555B1 (en) 2012-05-09
JP2008135769A (ja) 2008-06-12
JP2005079584A (ja) 2005-03-24
US20120013870A1 (en) 2012-01-19
EP2284613A1 (en) 2011-02-16

Similar Documents

Publication Publication Date Title
US9025127B2 (en) Lithographic apparatus and device manufacturing method
KR101342303B1 (ko) 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
TWI463266B (zh) 微影裝置及污染移除或避免之方法
EP1571701A1 (en) Exposure apparatus and method for manufacturing device
CN102081310A (zh) 光刻设备和光刻设备清洗方法
TWI326004B (en) Lithographic apparatus and device manufacturing method
US20070024832A1 (en) Exposure apparatus and method for producing device
US8958051B2 (en) Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
CN101140426B (zh) 光刻设备和器件制造方法
US20110032497A1 (en) Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US20090190106A1 (en) Immersion lithography apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101006

Termination date: 20200827

CF01 Termination of patent right due to non-payment of annual fee