CN112701029A - 半导体器件制造中的氧化锡薄膜间隔物 - Google Patents

半导体器件制造中的氧化锡薄膜间隔物 Download PDF

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Publication number
CN112701029A
CN112701029A CN202011403430.XA CN202011403430A CN112701029A CN 112701029 A CN112701029 A CN 112701029A CN 202011403430 A CN202011403430 A CN 202011403430A CN 112701029 A CN112701029 A CN 112701029A
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sno
layer
etch
silicon
semiconductor substrate
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大卫·查尔斯·史密斯
理查德·怀斯
阿潘·马霍罗瓦拉
帕特里克·A·范克利蒙布特
巴特·J·范施拉芬迪克
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Lam Research Corp
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Lam Research Corp
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202011403430.XA 2016-06-28 2017-06-27 半导体器件制造中的氧化锡薄膜间隔物 Pending CN112701029A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/195,348 2016-06-28
US15/195,348 US9824893B1 (en) 2016-06-28 2016-06-28 Tin oxide thin film spacers in semiconductor device manufacturing
CN201710498301.5A CN107546106B (zh) 2016-06-28 2017-06-27 半导体器件制造中的氧化锡薄膜间隔物

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CN201710498301.5A Active CN107546106B (zh) 2016-06-28 2017-06-27 半导体器件制造中的氧化锡薄膜间隔物
CN202010517239.1A Active CN111769038B (zh) 2016-06-28 2017-06-27 半导体器件制造中的氧化锡薄膜间隔物

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US (4) US9824893B1 (https=)
JP (3) JP7096537B2 (https=)
KR (4) KR102416350B1 (https=)
CN (3) CN112701029A (https=)
SG (2) SG10202012976TA (https=)
TW (3) TWI770033B (https=)

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US20100069614A1 (en) 2008-06-27 2010-03-18 Merus B.V. Antibody producing non-human mammals
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
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