CN108320773A - 自动设时复位脉冲生成器及具有脉冲生成器的存储器装置 - Google Patents

自动设时复位脉冲生成器及具有脉冲生成器的存储器装置 Download PDF

Info

Publication number
CN108320773A
CN108320773A CN201710165629.5A CN201710165629A CN108320773A CN 108320773 A CN108320773 A CN 108320773A CN 201710165629 A CN201710165629 A CN 201710165629A CN 108320773 A CN108320773 A CN 108320773A
Authority
CN
China
Prior art keywords
tracking
block
signal
reset
tracking block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710165629.5A
Other languages
English (en)
Other versions
CN108320773B (zh
Inventor
陈致均
林俊宏
黄正达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
eMemory Technology Inc
Original Assignee
eMemory Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by eMemory Technology Inc filed Critical eMemory Technology Inc
Publication of CN108320773A publication Critical patent/CN108320773A/zh
Application granted granted Critical
Publication of CN108320773B publication Critical patent/CN108320773B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14Protection against unauthorised use of memory or access to memory
    • G06F12/1408Protection against unauthorised use of memory or access to memory by using cryptography
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/71Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information
    • G06F21/72Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information in cryptographic circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/71Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information
    • G06F21/73Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information by creating or determining hardware identification, e.g. serial numbers
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/78Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
    • G06F21/79Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614Improving the reliability of storage systems
    • G06F3/0619Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638Organizing or formatting or addressing of data
    • G06F3/064Management of blocks
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/102External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/24Bit-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/32Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • H03K3/356113Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1052Security improvement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/40Specific encoding of data in memory or cache
    • G06F2212/402Encrypted data
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/22Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402Internal storage of test result, quality data, chip identification, repair information
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/32Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials
    • H04L9/3271Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials using challenge-response
    • H04L9/3278Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials using challenge-response using physically unclonable functions [PUF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/20Programmable ROM [PROM] devices comprising field-effect components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/20Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y04INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
    • Y04SSYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
    • Y04S40/00Systems for electrical power generation, transmission, distribution or end-user application management characterised by the use of communication or information technologies, or communication or information technology specific aspects supporting them
    • Y04S40/20Information technology specific aspects, e.g. CAD, simulation, modelling, system security

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Software Systems (AREA)
  • Human Computer Interaction (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Detection And Correction Of Errors (AREA)
  • Storage Device Security (AREA)
  • Logic Circuits (AREA)

Abstract

一种自动设时复位脉冲生成器,包含触发器、跟踪块和跟踪电路。触发器接收输入信号和反馈信号,并输出复位信号。跟踪块具有串联耦合的复制单元以复制在外部装置的结构。跟踪块具有第一端和第二端。第一端和第二端位在跟踪块在相同位置或两个不同位置处。跟踪电路部件接收复位信号,并接收第一端和第二端,以分别对在第一端处的跟踪块进行放电,以及感测在第二端处由复位信号触发的电压电平。当电压电平小于或等于阈值时,作为反馈信号的跟踪信号被输出到触发器。

Description

自动设时复位脉冲生成器及具有脉冲生成器的存储器装置
技术领域
本发明大体上涉及一种存储器装置,具体来说,涉及一种自动设时复位脉冲生成器和具有自动设时复位脉冲生成器的存储器装置。
背景技术
基本上,存储器装置包含存储单元部件和外围控制电路。外围控制电路用以控制对存储单元部件的存储单元的存取。存储单元部件可具有对不同结构的多种设计。然而,一串存储单元在操作中需要进行放电或复位。
在存储单元部件中,每一位线上包含串联耦合的多个存储单元。位线连接到用于选择位线的Y路径电路。接着,多个放电和感测部件分别用于对位线进行放电,以及感测位线中的数据。
然而,在电阻、电容(RC)放电机制中,其所进行的放电处理对于存储单元部件的存取操作上会消耗许多时间。因此,在加速存取时间的考量下,如何减少放电时间为一个值得考虑的课题。
发明内容
本发明提出具有自动设时复位脉冲生成器的存储器装置,以便适当控制以停止位线的放电处理。存取时间不会浪费在因恒定设置的放电时间所导致的充分完成放电处理的等待时间。
在实施例中,本发明提供自动设时复位脉冲生成器,其包含触发器电路部件、跟踪块和跟踪电路部件。触发器电路部件接收输入信号和反馈信号,并输出复位信号,其中复位信号向外部输出以对外部装置进行复位。跟踪块具有串联耦合的多个复制单元,并且复制在外部装置中的结构,其中跟踪块具有第一端和第二端,其中第一端和第二端取自跟踪块在相同位置或两个不同位置处。跟踪电路部件接收复位信号,并接收第一端和第二端,以分别对在第一端处的跟踪块进行放电和感测在第二端处由复位信号触发的电压电平,其中当作输入到触发器电路的反馈信号的跟踪信号(TRACK_OUT signal)从第一逻辑状态改变成第二逻辑状态,以使得当在第二端处的电压电平经比较而小于或等于所预定的阈值时,改变复位信号的逻辑状态。
在另一实施例中,关于上述的自动设时复位脉冲生成器,跟踪块的复制单元是复制的存储单元,以当作存储器装置中的复制位线。
在另一实施例中,关于上述的自动设时复位脉冲生成器,延迟电路部件为缓冲器。
在另一实施例中,关于上述的自动设时复位脉冲生成器,跟踪电路部件包括用于对在第一端处的跟踪块进行放电的放电路径和用于感测在第二端处的电压电平的感测电路。
在另一实施例中,关于上述的自动设时复位脉冲生成器,第一端和第二端取自在跟踪块的中间区处的跟踪块的相同位置。
在另一实施例中,关于上述的自动设时复位脉冲生成器,第一端和第二端取自跟踪块的第一位置和第二位置,第一位置相对接近于跟踪块的第一末端,且第二位置相对接近于跟踪块的第二末端。
在另一实施例中,关于上述的自动设时复位脉冲生成器,第一位置为跟踪块的第一末端,且第二位置为跟踪块的第二末端。
在另一实施例中,本发明提供存储器装置,其包含存储单元部件和自动设时复位脉冲生成器。存储单元部件包含多个位线、Y路径电路以及多个放电和感测部件。位线中的每一个包括串联耦合的多个存储单元;用于按照预期选择位线中的一个的Y路径电路;以及多个放电和感测部件,它们分别对应于分别用于对位线进行放电和感测位线中的数据的位线。自动设时复位脉冲生成器包含触发器电路部件、跟踪块和跟踪电路部件。触发器电路部件接收输入信号和反馈信号,并输出复位信号,其中复位信号向外部输出以对存储单元部件的位线进行放电。跟踪块具有串联耦合的多个复制单元,并在存储单元部件中复制位线中的一个的结构,其中跟踪块具有第一端和第二端,其中第一端和第二端取自跟踪块在相同位置或两个不同位置处。跟踪电路部件接收复位信号,并接收第一端和第二端,以分别对在第一端处的跟踪块进行放电和感测在第二端处由复位信号触发的电压电平,其中当作输入到触发器电路的反馈信号的跟踪信号从第一逻辑状态改变成第二逻辑状态,以使得当电压电平经比较而小于或等于所预定的阈值时,复位信号的逻辑状态产生改变。
在另一实施例中,关于存储器装置,跟踪块的单元为根据位线的存储单元复制的存储单元,以当作位线在存储单元部件中的复制位线。
在另一实施例中,关于存储器装置,延迟电路部件为缓冲器。
在另一实施例中,关于存储器装置,跟踪电路部件包括用于对在第一端处的跟踪块进行放电的放电路径和用于感测在第二端处的电压电平的感测电路。
在另一实施例中,关于存储器装置,第一端和第二端取自在跟踪块的中间区处的跟踪块的相同位置。
在另一实施例中,关于存储器装置,第一端和第二端取自跟踪块的第一位置和第二位置,第一位置相对接近于跟踪块的第一末端,且第二位置相对接近于跟踪块的第二末端。
在另一实施例中,关于存储器装置,第一位置为跟踪块的第一末端,且第二位置为跟踪块的第二末端。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。
附图说明
图1为根据本发明的实施例的示意性地说明自动设时复位脉冲生成器的电路图的图式。
图2为根据本发明的实施例的示意性地说明跟踪电路部件的电路图的图式。
图3为根据本发明的实施例的示意性地说明存储器装置的电路图的图式。
图4为根据本发明的实施例的示意性地说明自动设时复位脉冲生成器的电路图的图式。
图5为根据本发明的实施例的示意性地说明用于自动设时复位脉冲生成器的信号的时序图的图式。
图6为根据本发明的实施例的示意性地说明用于在操作中的自动设时复位脉冲生成器的方法的图式。
符号说明
90:存储单元部件
92:位线
94:Y路径电路
96:放电和感测部件
96a:放电电路
96b:感测电路
100:触发器电路部件
102:延迟电路部件
104:跟踪块
106:跟踪电路部件
106a:放电电路
106b:感测电路
110:自动设时复位脉冲生成器
112:第一端
114:第二端
116:复制位线
116a:复制单元
116b:复制单元
118:Y路径电路
120:复位控制电路
122:位置
124:位置
126:字线端
WL:字线端
READ:读取启动信号
RESET:复位信号
TRACK_OUT:跟踪信号
RETRACK:复位跟踪信号
ENSA:感测启动信号
S100、S102、S104、S106、S108:步骤
具体实施方式
现将详细参考实施例配合附图做说明。只要可能,相同的参考标号在附图及描述中用以指代相同或相似部分。
存储单元阵列基本上具有多个存储单元。存储单元串联成为存储单元串。所述存储单元串也是待选择的位线的一部分。每一个存储单元等效于RC(电阻、电容)电路部件,并且,存储单元在操作中会累积一些电荷。在操作中,例如,具有存储单元的位线需要在读取之前进行放电。然而,在操作中,放电时间并不总是相同的。通常来说,所设置长度恒定的时段需确保全部位线在任何情况下都可完成放电。也就是说,实际上所述恒定的时段通常大于对位线进行放电的实际需要。这会造成在存取操作上浪费时间。
本发明提出自动设时复位脉冲生成器,其可装备在存储器装置中,以便及时停止放电处理而不浪费时间。提供若干实施例以描述本发明,并不用以限制本发明的范畴。
图1为根据本发明的实施例的示意性地说明自动设时复位脉冲生成器的电路图的图式。参见图1,一般来说,自动设时复位脉冲生成器110包含触发器电路部件100、延迟电路部件102、跟踪块104和跟踪电路部件106。自动设时复位脉冲生成器110大体上不限于用在可控制位线的放电处理的存储器装置中。在另一方面,跟踪块104可为需要进行放电的总体电路的多个电路串中的一个的复制块。总体电路可为存储器装置或具有类似的待放电的存储单元串的任何装置。稍后如图3中所示,以下实施例以存储器装置为例。
触发器电路部件100接收输入信号(例如读取启动信号READ),以及接收反馈信号(例如跟踪信号TRACK_OUT)。触发器电路部件100还具有输出复位信号(例如复位信号RESET)的一端。复位信号RESET输出至外部装置以使外部装置进行复位。如图3中所示,在实施例中,外部装置为存储单元部件90。延迟电路部件延迟复位信号RESET以具有复位跟踪信号RETRACK。跟踪块104具有串联耦合的多个复制单元,并用以复制外部装置中的结构。跟踪块104具有第一端112和第二端114,其中第一端112和第二端114位于跟踪块104上的相同位置或两个不同位置处。
在实施例中,第一端112和第二端114位于跟踪块104的中间区处的相同位置,在图4中有更详细的描述。
在图1的实施例中,第一端112和第二端114位于跟踪块104的第一位置和第二位置。第一位置相对第二位置更接近于跟踪块104的第一末端,且第二位置相对第一位置更接近于跟踪块104的第二末端。再者,在实施例中,第一位置可为跟踪块的第一末端,且第二位置则可为跟踪块的第二末端。
图1中使跟踪块104具有的两种位置的设置方式具有至少一个原因。对于具有多个单元的串列,如果跟踪块104在第一末端(即如图1中所示的跟踪块104的下部末端处)进行放电,那么可预期的,在第二末端(即如图1中所示的顶部末端)处的开始的单元将会是最后一个结束放电处理的单元。在第二端114处的电压电平将确保可完成放电处理。
在随后的动作中,跟踪电路部件106接收第一端112和第二端114,以对在第一端112处的跟踪块104进行放电,并感测在第二端114处的电压电平。作为反馈信号的跟踪信号TRACK_OUT从跟踪电路部件106输出到触发器电路部件100。跟踪信号TRACK_OUT被触发到逻辑高状态,以禁能复位信号RESET,其中,复位信号RESET被发送到放电和感测部件96(见图3)。随后,复位信号RESET被改变成逻辑低状态,以及时停止放电处理。
图1中的延迟电路部件102,例如缓冲器,根据信号RESET信号设置预设延迟,以确保外部装置充分开始放电处理。
在另一方面,自动设时复位脉冲生成器110可被视为两个部分,其中一个部分为跟踪块104,另一部分为复位控制电路120。复位控制电路120包含触发器电路部件100、延迟电路部件102和跟踪电路部件106。
图2为根据本发明的实施例的示意性地说明跟踪电路部件的电路图的图式。为更详细地描述跟踪电路部件106,请参见图2。在实施例中,跟踪电路部件106包含放电电路106a和感测电路106b。放电电路106a提供放电路径,并且在实施例中,放电电路106a包含晶体管开关。所述晶体管开关受复位跟踪信号RETRACK的控制以引发在第一端112处的跟踪块104的放电处理。在实施例中,感测电路106b包含感测放大器,用以感测在第二端114处的电压电平,并在电压电平小于或等于阈值时,感测电路106b输出跟踪信号TRACK_OUT。跟踪信号TRACK_OUT为被提供到如图1所示的触发器电路部件100的反馈信号。
在实施例中,自动设时复位脉冲生成器110可应用于存储器装置。图3为根据本发明的实施例的示意性地说明存储器装置的电路图的图式。参见图3,存储器装置包含存储单元部件90和自动设时复位脉冲生成器110。
存储单元部件90包含多个位线92、Y路径电路94和多个放电和感测部件96。每一位线92包含串联耦合的多个存储单元CELL。Y路径电路94与位线92耦合,并选择所需的位线92的其中之一。放电和感测部件96分别对应于位线92,并分别对位线92进行放电以及感测位线中的数据。在实施例中,如通常在本领域中所知而不需详细描述的,放电和感测部件96包含放电电路96a和感测电路96b。放电电路96a可由复位信号RESET控制以执行放电处理。感测电路96b可由感测启动信号ENSA控制以执行感测处理。在低功率操作的实施例中,感测启动信号ENSA依据复位信号RESET的下降边缘触发,并且感测启动信号ENSA的逻辑状态将从低改变成高。感测启动信号ENSA可在一时段之后被禁能或由读取启动信号READ的上升边缘来被禁能。并且感测启动信号ENSA的逻辑状态将从高改变成低。在高速操作的实施例中,感测启动信号ENSA始终保持为高。
与存储单元部件90配置的自动设时复位脉冲生成器110包含等效于位线92、Y路径电路94以及放电和感测部件96的复制电路,并且,自动设时复位脉冲生成器110进一步包含控制机构。因此,同样还参见图1,自动设时复位脉冲生成器110可被视为两个部分,其中一个部分为跟踪块104,另一部分为复位控制电路120。复位控制电路120包含触发器电路部件100、延迟电路部件102和跟踪电路部件106。在具有存储单元部件90的自动设时复位脉冲生成器110的应用的实施例中,触发器电路部件100接收输入信号(例如读取启动信号READ和反馈信号TRACK_OUT),并输出复位信号RESET。复位信号RESET向外部输出,以通过与先前段落中描述的相同的机构对存储单元部件90的位线92进行放电。延迟电路部件102延迟复位信号RESET以使复位信号RESET具有复位跟踪信号RETRACK。
另外,跟踪块104具有串联耦合的多个复制单元116a,并在存储单元部件中复制位线92中其中之一的结构。另外,在实施例中,Y路径电路94也可被跟踪块104中的Y路径电路118所复制。跟踪块104具有第一端112和第二端114,其中第一端112和第二端114位于跟踪块104的相同位置或两个不同位置处。详细地说,第一端112和第二端114位于复制位线116的相同位置或两个不同位置处。在图3的实施例中,第一端112和第二端114位于跟踪块104的两个不同位置122和124处,所述位置122和124对应于如图1中所绘示的第一端112和第二端114处的两个位置。
复位控制电路120的跟踪电路部件106接收第一端112和第二端114,以分别对在第一端112处的跟踪块104或复制位线116进行放电(细节上来说,在第一端112进行放电),以及感测在第二端114处的电压电平。作为反馈信号的跟踪信号TRACK_OUT被输出到触发器电路部件100。当第二端114的电压电平小于或等于阈值时,跟踪信号TRACK_OUT被触发到逻辑高状态以禁能复位信号RESET,所述复位信号RESET被发送到放电和感测部件96。随后,将复位信号RESET改变成逻辑低状态以及时停止放电处理。
在实施例中,复制位线116的单元的字线端126还可连接到对应的存储单元部件90的单元的字线端WL,以具有更好的复制条件。然而,在又另一实施例中,为了避免对存储单元部件90中的感测速度产生影响,属于存储单元部件90的字线端WL可以不连接到复制位线116。在此情形下,复制位线116的单元的字线端126可以连接到恒定电压,或是也可以连接到所述单元的另一端。
关于跟踪块104的第一端112和第二端114,提供另一实施例。图4为根据本发明的实施例的示意性地说明自动设时复位脉冲生成器的电路图的图式。除了第一端112和第二端114的位置之外,图4中的自动设时复位脉冲生成器110的实施例与图1中绘示的自动设时复位脉冲生成器110相类似。在此实施例中,第一端112和第二端114位在跟踪块的中间区处的,即图3中的复制位线116的跟踪块104的相同位置。在此情形下,位线还可从第一端112进行放电。然而,第二端114不连接到整个跟踪块中预期最晚时间进行放电的单元。无论如何,这种差异可使得对位线的放电动作的停止时间点稍微早于如图1中透过第二端114连接到末端单元的状态。即使以此方式,本发明的概念对于及时停止放电处理仍是有效。
图5为根据本发明的实施例的示意性地说明用于自动设时复位脉冲生成器的信号的时序图。参见图5,绘示了用于读取启动信号READ、复位信号RESET、复位跟踪信号RETRACK、感测和跟踪信号TRACK_OUT的时序。读取启动信号READ为来自系统的用以存取存储器的读取启动信号。复位信号RESET将被发送到放电和感测部件96,以及时控制(开始或停止)放电处理。复位跟踪信号RETRACK由延迟电路部件102根据信号RESET延迟一预设时间来产生,用以确保存储单元部件90(外部装置)充分的启动放电处理。感测信号为在跟踪块104的第二端114处的电压电平。当感测信号的电压电平下降到等于或小于阈值时,输出跟踪信号TRACK_OUT。跟踪信号TRACK_OUT被反馈回到触发器电路部件100,以禁能复位信号RESET,从而停止存储单元部件90中的放电处理。
在高速操作的实施例中,跟踪电路部件106的感测电路106b始终开启。在低功率操作的实施例中,一旦读取启动信号READ变成高电平Hi,感测电路106b就会被开启,并且在跟踪信号TRACK_OUT从Hi变成低电平Lo之后,感测电路106b就被关闭。
图6为根据本发明的实施例的示意性地说明用于在操作中的自动设时复位脉冲生成器的方法的图式。参见图6,根据本发明的另一方面,操作自动设时复位脉冲生成器110以控制放电时间的方法可包含若干步骤。在步骤S100中,读取启动信号READ启动读取处理。在步骤S102中,开启所选择的位线92的Y路径电路以及复制位线116的Y路径电路118。在步骤S104中,对主阵列的所选择的位线和复制位线进行复位以开始放电。在步骤S106中,检测在第二端114处的复制位线的电压电平。在步骤S108中,禁能复位信号RESET,使所选择的位线停止放电,并且接着开始感测数据。
本发明已提出自动设时复位脉冲生成器110以通过跟踪块复制实际位线。因此,检测跟踪块的电压电平可确定停止对位线进行放电的时间,以便及时开始感测位线的数据。本发明可确保放电处理的完成,并及时开始感测处理。可有效避免由于复位时间的恒定设置导致的等待时间。可加速对存储器的存取时间。
虽然本发明已以实施例公开如上,然而其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,应当可以作各种更动与润饰,因此本发明的保护范围应当视所附权利要求书所界定的为准。

Claims (16)

1.一种自动设时复位脉冲生成器,包括:
触发器电路部件,接收输入信号和反馈信号,并输出复位信号,其中所述复位信号向外部输出以对外部装置进行复位;
跟踪块,具有串联耦合的多个复制单元,并且复制在所述外部装置中的结构,其中所述跟踪块具有第一端和第二端,其中所述第一端和所述第二端取自所述跟踪块在相同位置或两个不同位置处;以及
跟踪电路部件,接收所述复位信号,并接收所述第一端和所述第二端,以分别对在所述第一端处的所述跟踪块进行放电和感测,在所述第二端处由所述复位信号触发的电压电平,其中当作所述反馈信号的跟踪信号被输出到所述触发器电路部件,
其中当作所述反馈信号输入到所述触发器电路的所述跟踪信号从第一逻辑状态改变成第二逻辑状态,以使得当在所述第二端处的所述电压电平经比较而小于或等于所预定的阈值时,改变所述复位信号的逻辑状态。
2.如权利要求1所述的自动设时复位脉冲生成器,其中所述跟踪块的所述单元是复制的存储单元,以当作在存储器装置中的复制位线。
3.如权利要求1所述的自动设时复位脉冲生成器,进一步包括用于在所述复位信号进入所述跟踪电路部件中之前延迟所述复位信号的延迟电路部件。
4.如权利要求3所述的自动设时复位脉冲生成器,其中所述延迟电路部件为缓冲器。
5.如权利要求1所述的自动设时复位脉冲生成器,其中所述跟踪电路部件包括用于对在所述第一端处的所述跟踪块进行放电的放电路径和用于感测在所述第二端处的所述电压电平的感测电路。
6.如权利要求1所述的自动设时复位脉冲生成器,其中所述第一端和所述第二端取自在所述跟踪块的中间区处的所述跟踪块的所述相同位置。
7.如权利要求1所述的自动设时复位脉冲生成器,其中所述第一端和所述第二端取自所述跟踪块的第一位置和第二位置,所述第一位置相对接近于所述跟踪块的第一末端,且所述第二位置相对接近于所述跟踪块的第二末端。
8.如权利要求7所述的自动设时复位脉冲生成器,其中所述第一位置为所述跟踪块的所述第一末端,且所述第二位置为所述跟踪块的所述第二末端。
9.一种存储器装置,包括:
存储单元部件,包括:
多个位线,每一位线包括串联耦合的多个存储单元;
Y路径电路,其用于按照预期选择所述位线中的一个;以及
多个放电和感测部件,分别对应于分别用于对所述位线进行放电和感测所述位线中的数据的位线;以及
自动设时复位脉冲生成器,包括:
触发器电路部件,接收输入信号和反馈信号,并输出复位信号,其中所述复位信号向外部输出以用于对所述存储单元部件的所述位线进行放电的复位;
跟踪块,其具有串联耦合的多个复制单元,并在所述存储单元部件中复制所述位线中的一个的结构,其中所述跟踪块具有第一端和第二端,其中所述第一端和所述第二端取自所述跟踪块在相同位置或两个不同位置处;以及
跟踪电路部件,其接收所述复位信号,并接收所述第一端和所述第二端,以分别对在所述第一端处的所述跟踪块进行放电和感测在所述第二端处由所述复位信号触发的电压电平,
其中当作所述反馈信号输入到所述触发器电路的所述跟踪信号从第一逻辑状态改变成第二逻辑状态,以使得当在所述第二端处的所述电压电平经比较而小于或等于所预定的阈值时,改变所述复位信号的逻辑状态。
10.如权利要求9所述的存储器装置,其中所述跟踪块的所述单元是根据所述位线的所述存储单元复制的存储单元,以当作所述位线在所述存储单元部件中的复制位线。
11.如权利要求9所述的存储器装置,其中所述自动设时复位脉冲生成器进一步包括用于在所述复位信号进入所述跟踪电路部件中之前延迟所述复位信号的延迟电路部件。
12.如权利要求11所述的存储器装置,其中所述延迟电路部件为缓冲器。
13.如权利要求9所述的存储器装置,其中所述跟踪电路部件包括用于对在所述第一端处的所述跟踪块进行放电的放电路径和用于感测在所述第二端处的所述电压电平的感测电路。
14.如权利要求9所述的存储器装置,其中所述第一端和所述第二端取自在所述跟踪块的中间区处的所述跟踪块的所述相同位置。
15.如权利要求9所述的存储器装置,其中所述第一端和所述第二端取自所述跟踪块的第一位置和第二位置,所述第一位置相对接近于所述跟踪块的第一末端,且所述第二位置相对接近于所述跟踪块的第二末端。
16.如权利要求15所述的存储器装置,其中所述第一位置为所述跟踪块的所述第一末端,且所述第二位置为所述跟踪块的所述第二末端。
CN201710165629.5A 2016-01-19 2017-03-20 自动设时复位脉冲生成器及具有脉冲生成器的存储器装置 Active CN108320773B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662280137P 2016-01-19 2016-01-19
US15/406,800 2017-01-16
US15/406,800 US9792968B2 (en) 2016-01-19 2017-01-16 Self-timed reset pulse generator and memory device with self-timed reset pulse generator

Publications (2)

Publication Number Publication Date
CN108320773A true CN108320773A (zh) 2018-07-24
CN108320773B CN108320773B (zh) 2020-12-18

Family

ID=57123841

Family Applications (7)

Application Number Title Priority Date Filing Date
CN201610996764.XA Active CN106981300B (zh) 2016-01-19 2016-11-11 一次编程存储器胞与存储器阵列以及相关随机码产生方法
CN201710025661.3A Active CN107045886B (zh) 2016-01-19 2017-01-13 非易失性存储器
CN201710035101.6A Active CN107039057B (zh) 2016-01-19 2017-01-17 具有高可靠度的电源切换装置
CN201710035042.2A Active CN106981313B (zh) 2016-01-19 2017-01-17 反熔丝型一次编程存储器单元的编程方法
CN201710044102.7A Active CN107045463B (zh) 2016-01-19 2017-01-19 具有纠错码的存储器架构以及其操作方法
CN201710142598.1A Active CN108288477B (zh) 2016-01-19 2017-03-10 升压保护电路
CN201710165629.5A Active CN108320773B (zh) 2016-01-19 2017-03-20 自动设时复位脉冲生成器及具有脉冲生成器的存储器装置

Family Applications Before (6)

Application Number Title Priority Date Filing Date
CN201610996764.XA Active CN106981300B (zh) 2016-01-19 2016-11-11 一次编程存储器胞与存储器阵列以及相关随机码产生方法
CN201710025661.3A Active CN107045886B (zh) 2016-01-19 2017-01-13 非易失性存储器
CN201710035101.6A Active CN107039057B (zh) 2016-01-19 2017-01-17 具有高可靠度的电源切换装置
CN201710035042.2A Active CN106981313B (zh) 2016-01-19 2017-01-17 反熔丝型一次编程存储器单元的编程方法
CN201710044102.7A Active CN107045463B (zh) 2016-01-19 2017-01-19 具有纠错码的存储器架构以及其操作方法
CN201710142598.1A Active CN108288477B (zh) 2016-01-19 2017-03-10 升压保护电路

Country Status (5)

Country Link
US (6) US9613714B1 (zh)
EP (4) EP3614387B1 (zh)
JP (3) JP6302020B2 (zh)
CN (7) CN106981300B (zh)
TW (7) TWI610309B (zh)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606448B (zh) * 2015-07-29 2017-11-21 國立交通大學 介電質熔絲型記憶電路及其操作方法
US10181357B2 (en) * 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
DE112016006170B4 (de) * 2016-01-08 2021-07-29 Synopsys, Inc. Puf-werterzeugung unter verwendung einer anti-schmelzsicherungs-speicheranordnung
US10020268B2 (en) 2016-04-13 2018-07-10 Ememory Technology Inc. Random number generator device and control method thereof
US10090027B2 (en) * 2016-05-25 2018-10-02 Ememory Technology Inc. Memory system with low read power
EP3270539B1 (en) 2016-07-10 2021-03-10 IMEC vzw Breakdown-based physical unclonable function
US10122538B2 (en) * 2016-10-12 2018-11-06 Ememory Technology Inc. Antifuse physically unclonable function unit and associated control method
US10395745B2 (en) 2016-10-21 2019-08-27 Synposys, Inc. One-time programmable bitcell with native anti-fuse
US10446562B1 (en) * 2017-01-10 2019-10-15 Synopsys, Inc. One-time programmable bitcell with partially native select device
JP6349008B1 (ja) * 2017-04-13 2018-06-27 力旺電子股▲ふん▼有限公司eMemory Technology Inc. 乱数発生装置及びその制御方法
US11615859B2 (en) * 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10776521B2 (en) 2017-04-21 2020-09-15 Apple Inc. Security techniques based on memory timing characteristics
US10090309B1 (en) * 2017-04-27 2018-10-02 Ememory Technology Inc. Nonvolatile memory cell capable of improving program performance
US10276239B2 (en) * 2017-04-27 2019-04-30 Ememory Technology Inc. Memory cell and associated array structure
EP3407336B1 (en) * 2017-05-22 2022-08-17 Macronix International Co., Ltd. Unchangeable phyisical unclonable function in non-volatile memory
US10276253B2 (en) * 2017-08-04 2019-04-30 Micron Technology, Inc. Apparatuses and methods including anti-fuses and for reading and programming of same
US10623192B2 (en) * 2017-08-25 2020-04-14 Synopsys, Inc. Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security
US10915464B2 (en) 2017-09-12 2021-02-09 Ememory Technology Inc. Security system using random number bit string
JP6538908B2 (ja) * 2017-09-12 2019-07-03 力旺電子股▲ふん▼有限公司eMemory Technology Inc. エントロピービットを用いたセキュリティシステム
CN109658963B (zh) * 2017-10-11 2020-11-17 华邦电子股份有限公司 电阻式存储器存储装置的操作方法
TWI652683B (zh) 2017-10-13 2019-03-01 力旺電子股份有限公司 用於記憶體的電壓驅動器
CN107945824A (zh) * 2017-11-21 2018-04-20 上海华虹宏力半导体制造有限公司 用于sonos存储器的复位电路及复位方法
US11063772B2 (en) 2017-11-24 2021-07-13 Ememory Technology Inc. Multi-cell per bit nonvolatile memory unit
US10505521B2 (en) * 2018-01-10 2019-12-10 Ememory Technology Inc. High voltage driver capable of preventing high voltage stress on transistors
CN110018810B (zh) * 2018-01-10 2021-05-18 力旺电子股份有限公司 随机码产生器
US11050575B2 (en) 2018-01-10 2021-06-29 Ememory Technology Inc. Entanglement and recall system using physically unclonable function technology
TWI696111B (zh) * 2018-01-10 2020-06-11 力旺電子股份有限公司 隨機碼產生器
US11055065B2 (en) 2018-04-18 2021-07-06 Ememory Technology Inc. PUF-based true random number generation system
US10714199B1 (en) * 2018-05-09 2020-07-14 Synopsys, Inc. PUF latch for OTP memory arrays and method of operation
CN110489351B (zh) * 2018-05-14 2021-03-09 英韧科技(上海)有限公司 芯片指纹管理装置及安全芯片
TWI669714B (zh) * 2018-05-29 2019-08-21 力旺電子股份有限公司 電壓控制裝置及記憶體系統
US10923483B2 (en) 2018-05-31 2021-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. EFuse
US10839872B2 (en) * 2018-07-03 2020-11-17 Ememory Technology Inc. Random bit cell using an initial state of a latch to generate a random bit
CN109087679A (zh) * 2018-07-27 2018-12-25 上海华力集成电路制造有限公司 存储单元及其构成的存储阵列和otp
US11170115B2 (en) * 2018-07-30 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for secure external access of the PUF information to an authorized entity
CN109062830B (zh) * 2018-08-02 2021-10-22 中国科学院微电子研究所 一种非易失性存储器的控制系统
WO2020029267A1 (zh) * 2018-08-10 2020-02-13 深圳市为通博科技有限责任公司 物理不可克隆函数puf装置
US10685727B2 (en) * 2018-08-10 2020-06-16 Ememory Technology Inc. Level shifter
US11176969B2 (en) * 2018-08-20 2021-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit including a first program device
US11380693B2 (en) * 2018-08-20 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including anti-fuse cell structure
US10797064B2 (en) * 2018-09-19 2020-10-06 Ememory Technology Inc. Single-poly non-volatile memory cell and operating method thereof
US10748591B2 (en) 2019-01-13 2020-08-18 Ememory Technology Inc. Random code generator
US11416416B2 (en) * 2019-01-13 2022-08-16 Ememory Technology Inc. Random code generator with non-volatile memory
US11514174B2 (en) * 2019-01-23 2022-11-29 Micron Technology, Inc. Memory devices with cryptographic components
US11294640B2 (en) 2019-03-13 2022-04-05 Ememory Technology Inc. Random number generator
US10924112B2 (en) 2019-04-11 2021-02-16 Ememory Technology Inc. Bandgap reference circuit
CN110164499B (zh) * 2019-05-24 2023-02-28 中国科学院微电子研究所 一种非易失性存储器的控制系统
US11152380B2 (en) * 2019-08-06 2021-10-19 Globalfoundries Singapore Pte. Ltd. Memory device and a method for forming the memory device
CN115085759A (zh) 2019-10-17 2022-09-20 立积电子股份有限公司 射频装置
US10984878B1 (en) * 2020-02-11 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd One-time programmable memory bit cell
US11663455B2 (en) * 2020-02-12 2023-05-30 Ememory Technology Inc. Resistive random-access memory cell and associated cell array structure
US11189356B2 (en) * 2020-02-27 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory
US11468945B2 (en) * 2020-10-15 2022-10-11 Arm Limited 3D storage architecture with tier-specific controls
US20220199622A1 (en) * 2020-12-18 2022-06-23 Ememory Technology Inc. Resistive memory cell and associated cell array structure
US11329836B1 (en) * 2021-03-12 2022-05-10 Globalfoundries U.S. Inc. Twin cell memory-based physically unclonable function
US11594541B2 (en) * 2021-03-26 2023-02-28 Nanya Technology Corporation One-time programmable memory array and manufacturing method thereof
CN113129985B (zh) * 2021-03-29 2024-05-03 深圳市国微电子有限公司 一种物理不可克隆单元及读取电路
CN115241181A (zh) 2021-04-23 2022-10-25 联华电子股份有限公司 单次可编程存储器元件
US20230047939A1 (en) * 2021-08-13 2023-02-16 Ememory Technology Inc. Fuse-type one time programming memory cell
FR3133699A1 (fr) * 2022-03-21 2023-09-22 Stmicroelectronics (Rousset) Sas Mémoire morte programmable
TW202410050A (zh) * 2022-08-24 2024-03-01 振生半導體股份有限公司 多狀態的一次性可程式化記憶體電路
TWI828568B (zh) * 2023-03-27 2024-01-01 華邦電子股份有限公司 物理不可複製函數代碼產生裝置及物理不可複製函數代碼的產生方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0136170A2 (en) * 1983-09-26 1985-04-03 Kabushiki Kaisha Toshiba A semiconductor memory device
CN1862702A (zh) * 2005-05-13 2006-11-15 台湾积体电路制造股份有限公司 存储器系统及只读存储器系统
CN102870160A (zh) * 2010-04-09 2013-01-09 高通股份有限公司 用于跟踪半导体存储器读取电流的可编程跟踪电路
CN103794242A (zh) * 2012-10-31 2014-05-14 台湾积体电路制造股份有限公司 用于升压字线定时方案的字线跟踪

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62180607A (ja) 1986-02-04 1987-08-07 Fujitsu Ltd 半導体集積回路
US4787066A (en) * 1987-08-03 1988-11-22 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability
US4825410A (en) 1987-10-26 1989-04-25 International Business Machines Corporation Sense amplifier control circuit
GB8923037D0 (en) 1989-10-12 1989-11-29 Inmos Ltd Timing control for a memory
US5243226A (en) * 1991-07-31 1993-09-07 Quicklogic Corporation Programming of antifuses
US5316971A (en) 1992-09-18 1994-05-31 Actel Corporation Methods for programming antifuses having at least one metal electrode
JPH0845269A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd 半導体記憶装置
US5528173A (en) * 1995-05-10 1996-06-18 Micron Technology, Inc. Low power, high speed level shifter
US6023431A (en) * 1996-10-03 2000-02-08 Micron Technology, Inc. Low current redundancy anti-fuse method and apparatus
JP2001351398A (ja) * 2000-06-12 2001-12-21 Nec Corp 記憶装置
EP1186924A3 (en) * 2000-09-05 2003-08-13 Matsushita Electric Industrial Co., Ltd. Optical signal reading apparatus using light leaked out of light transmission path
US6584526B1 (en) * 2000-09-21 2003-06-24 Intel Corporation Inserting bus inversion scheme in bus path without increased access latency
KR100375219B1 (ko) 2000-11-09 2003-03-07 삼성전자주식회사 반도체 메모리 장치의 데이터 라인 프리챠지 회로
US7187228B1 (en) 2001-06-22 2007-03-06 Quicklogic Corporation Method of programming an antifuse
JP3763775B2 (ja) 2001-11-28 2006-04-05 富士通株式会社 電源立ち上がり時の動作を安定化したレベルコンバータ回路
FR2836751A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique non destructrice
JP2003257180A (ja) * 2002-03-04 2003-09-12 Nec Electronics Corp DRAM(DynamicRandomAccessMemory)及びその動作方法
JP2004310904A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 不揮発性半導体記憶装置
JP2005276348A (ja) * 2004-03-25 2005-10-06 Fujitsu Ltd 半導体記憶装置、及びプリチャージ制御方法
TWI267863B (en) * 2004-04-12 2006-12-01 Samsung Electronics Co Ltd High voltage generating circuit preserving charge pumping efficiency
US20050289435A1 (en) * 2004-06-29 2005-12-29 Mulla Dean A Fast approximate DINV calculation in parallel with coupled ECC generation or correction
US7205820B1 (en) * 2004-07-08 2007-04-17 Pmc-Sierra, Inc. Systems and methods for translation of signal levels across voltage domains
JP4383987B2 (ja) * 2004-08-18 2009-12-16 株式会社東芝 Mos型電気ヒューズとそのプログラム方法
JP4709525B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
US7253496B2 (en) * 2005-06-28 2007-08-07 Cypress Semiconductor Corporation Antifuse circuit with current regulator for controlling programming current
US7280425B2 (en) * 2005-09-30 2007-10-09 Intel Corporation Dual gate oxide one time programmable (OTP) antifuse cell
US7359265B2 (en) 2006-01-04 2008-04-15 Etron Technology, Inc. Data flow scheme for low power DRAM
EP1990723B1 (en) * 2006-02-27 2011-07-13 Fujitsu Limited Information processing apparatus control method and information processing apparatus
US7952937B2 (en) * 2006-03-16 2011-05-31 Freescale Semiconductor, Inc. Wordline driver for a non-volatile memory device, a non-volatile memory device and method
KR100694972B1 (ko) * 2006-03-27 2007-03-14 주식회사 하이닉스반도체 센싱 노드용 프리차지 전압을 선택적으로 변경하는 기능을가지는 플래시 메모리 장치 및 그 독출 동작 방법
TWI344152B (en) * 2006-09-21 2011-06-21 Mediatek Inc Memory circuits and malfunction protection methods thereof
US7508694B2 (en) * 2006-09-27 2009-03-24 Novelics, Llc One-time-programmable memory
KR100825788B1 (ko) * 2006-10-31 2008-04-28 삼성전자주식회사 메모리 셀 센싱 이전에 비트라인의 프리차아지 전압 레벨을유지할 수 있는 플래쉬 메모리 장치의 센스 앰프 회로 및플래쉬 메모리 셀 센싱 방법
US20080316660A1 (en) 2007-06-20 2008-12-25 Ememory Technology Inc. Electrostatic discharge avoiding circuit
US8063662B2 (en) * 2007-07-06 2011-11-22 Analog Devices, Inc. Methods and apparatus for predictable level shifter power-up state
US7551497B2 (en) * 2007-09-20 2009-06-23 Mediatek Inc. Memory circuits preventing false programming
US7804327B2 (en) * 2007-10-12 2010-09-28 Mediatek Inc. Level shifters
JP5112846B2 (ja) * 2007-12-27 2013-01-09 セイコーインスツル株式会社 電源切替回路
US8255758B2 (en) * 2008-01-21 2012-08-28 Apple Inc. Decoding of error correction code using partial bit inversion
US8031506B2 (en) 2008-03-21 2011-10-04 Broadcom Corporation One-time programmable memory cell
TWI430275B (zh) 2008-04-16 2014-03-11 Magnachip Semiconductor Ltd 用於程式化非揮發性記憶體裝置之方法
US8127204B2 (en) * 2008-08-15 2012-02-28 Micron Technology, Inc. Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system
US7782116B2 (en) * 2008-09-05 2010-08-24 Fairchild Semiconductor Corporation Power supply insensitive voltage level translator
US8910009B1 (en) * 2008-09-08 2014-12-09 Marvell International Ltd. Method and apparatus for enhancing error detection in data transmission
US8395923B2 (en) * 2008-12-30 2013-03-12 Intel Corporation Antifuse programmable memory array
US8125842B2 (en) 2009-03-31 2012-02-28 Agere Systems Inc. Tracking circuit for reducing faults in a memory
CN101923896A (zh) * 2009-06-12 2010-12-22 威刚科技(苏州)有限公司 电子存储装置及其纠错方法
US9013910B2 (en) * 2009-07-30 2015-04-21 Ememory Technology Inc. Antifuse OTP memory cell with performance improvement prevention and operating method of memory
JP4937316B2 (ja) * 2009-08-21 2012-05-23 株式会社東芝 不揮発性半導体記憶装置
US20110246857A1 (en) 2010-04-02 2011-10-06 Samsung Electronics Co., Ltd. Memory system and method
JP5343916B2 (ja) * 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
US8217705B2 (en) * 2010-05-06 2012-07-10 Micron Technology, Inc. Voltage switching in a memory device
KR101115623B1 (ko) * 2010-07-09 2012-02-15 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 이의 동작 방법
JP5466594B2 (ja) * 2010-07-29 2014-04-09 ルネサスエレクトロニクス株式会社 半導体記憶装置及びアンチヒューズのプログラム方法
US9224496B2 (en) * 2010-08-11 2015-12-29 Shine C. Chung Circuit and system of aggregated area anti-fuse in CMOS processes
CN102375698B (zh) * 2010-08-23 2014-06-25 群联电子股份有限公司 数据串分派与传送方法、存储器控制器与存储器储存装置
US8339831B2 (en) * 2010-10-07 2012-12-25 Ememory Technology Inc. Single polysilicon non-volatile memory
US8300450B2 (en) 2010-11-03 2012-10-30 International Business Machines Corporation Implementing physically unclonable function (PUF) utilizing EDRAM memory cell capacitance variation
JP2012109329A (ja) * 2010-11-16 2012-06-07 Elpida Memory Inc 半導体装置及びその制御方法
WO2012106358A1 (en) * 2011-01-31 2012-08-09 Everspin Technologies, Inc. Method of reading and writing to a spin torque magnetic random access memory with error correcting code
EP2671229B1 (en) * 2011-01-31 2019-10-09 Everspin Technologies, Inc. Method of writing to a spin torque magnetic random access memory
JP5204868B2 (ja) * 2011-04-12 2013-06-05 シャープ株式会社 半導体記憶装置
JP5269151B2 (ja) * 2011-06-09 2013-08-21 シャープ株式会社 半導体記憶装置
US8724363B2 (en) 2011-07-04 2014-05-13 Ememory Technology Inc. Anti-fuse memory ultilizing a coupling channel and operating method thereof
KR20130011058A (ko) * 2011-07-20 2013-01-30 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작방법
KR101115756B1 (ko) * 2011-09-23 2012-03-06 권의필 고집적 프로그램이 가능한 비휘발성 메모리 및 그 제조 방법
US8508971B2 (en) * 2011-11-08 2013-08-13 Wafertech, Llc Semiconductor device with one-time programmable memory cell including anti-fuse with metal/polycide gate
KR20130092174A (ko) * 2012-02-10 2013-08-20 에스케이하이닉스 주식회사 불휘발성 반도체 메모리 장치 및 이 장치의 데이터 센싱 방법
US8698922B2 (en) * 2012-02-14 2014-04-15 Omni Vision Technologies, Inc. Black level correction for imaging pixels
JP5395203B2 (ja) * 2012-03-23 2014-01-22 力晶科技股▲ふん▼有限公司 レベルシフト回路及びそれを用いた半導体デバイス
FR2990291A1 (fr) * 2012-05-03 2013-11-08 St Microelectronics Sa Procede de controle du claquage d'un antifusible
US8681528B2 (en) * 2012-08-21 2014-03-25 Ememory Technology Inc. One-bit memory cell for nonvolatile memory and associated controlling method
US8830766B2 (en) 2013-01-23 2014-09-09 Lsi Corporation Margin free PVT tolerant fast self-timed sense amplifier reset circuit
US20140293673A1 (en) 2013-03-28 2014-10-02 Ememory Technology Inc. Nonvolatile memory cell structure and method for programming and reading the same
US9281074B2 (en) * 2013-05-16 2016-03-08 Ememory Technology Inc. One time programmable memory cell capable of reducing leakage current and preventing slow bit response
US20150007337A1 (en) * 2013-07-01 2015-01-01 Christian Krutzik Solid State Drive Physical Uncloneable Function Erase Verification Device and Method
JP6106043B2 (ja) * 2013-07-25 2017-03-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR20150019442A (ko) * 2013-08-14 2015-02-25 삼성전자주식회사 퓨즈 셀들의 프로그래밍 방법 및 메모리 복구 방법
KR101489758B1 (ko) 2013-08-26 2015-02-04 한국전자통신연구원 플래시 메모리의 동작 제어 방법 및 장치
CN104464816B (zh) * 2013-09-21 2019-03-01 上峰科技股份有限公司 单次可编程记忆体及其操作方法和编程方法以及电子系统
EP3349343B1 (en) * 2013-11-08 2019-07-17 Delta Electronics (Thailand) Public Co., Ltd. Resistorless precharging
US9628086B2 (en) * 2013-11-14 2017-04-18 Case Western Reserve University Nanoelectromechanical antifuse and related systems
US20150143130A1 (en) * 2013-11-18 2015-05-21 Vixs Systems Inc. Integrated circuit provisioning using physical unclonable function
CN103730164B (zh) * 2013-12-27 2017-01-04 深圳市国微电子有限公司 一种可编程存储单元
JP6380827B2 (ja) * 2014-01-27 2018-08-29 富士電機株式会社 遅延回路
US9501352B2 (en) * 2014-03-05 2016-11-22 Kabushiki Kaisha Toshiba Memory device
US9823860B2 (en) * 2014-03-14 2017-11-21 Nxp B.V. One-time programming in reprogrammable memory
US9349472B2 (en) * 2014-03-25 2016-05-24 Integrated Silicon Solution, Inc. Flash memory device with sense-amplifier-bypassed trim data read
US9768957B2 (en) 2014-04-23 2017-09-19 Cryptography Research, Inc. Generation and management of multiple base keys based on a device generated key
JP6200370B2 (ja) * 2014-04-23 2017-09-20 ルネサスエレクトロニクス株式会社 データバス駆動回路、それを備えた半導体装置及び半導体記憶装置
US9778903B2 (en) * 2014-05-12 2017-10-03 Micron Technology, Inc. Apparatuses and methods for timing domain crossing
US9431111B2 (en) * 2014-07-08 2016-08-30 Ememory Technology Inc. One time programming memory cell, array structure and operating method thereof
KR102169197B1 (ko) * 2014-09-16 2020-10-22 에스케이하이닉스 주식회사 향상된 프로그램 효율을 갖는 안티퓨즈 오티피 메모리 셀 및 셀 어레이
KR20160071054A (ko) * 2014-12-11 2016-06-21 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작 방법
US9627088B2 (en) * 2015-02-25 2017-04-18 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0136170A2 (en) * 1983-09-26 1985-04-03 Kabushiki Kaisha Toshiba A semiconductor memory device
CN1862702A (zh) * 2005-05-13 2006-11-15 台湾积体电路制造股份有限公司 存储器系统及只读存储器系统
CN102870160A (zh) * 2010-04-09 2013-01-09 高通股份有限公司 用于跟踪半导体存储器读取电流的可编程跟踪电路
CN103794242A (zh) * 2012-10-31 2014-05-14 台湾积体电路制造股份有限公司 用于升压字线定时方案的字线跟踪

Also Published As

Publication number Publication date
TWI614766B (zh) 2018-02-11
CN107039057A (zh) 2017-08-11
CN107045886A (zh) 2017-08-15
TW201826277A (zh) 2018-07-16
CN106981300A (zh) 2017-07-25
CN107045463A (zh) 2017-08-15
EP3196889A1 (en) 2017-07-26
CN107045463B (zh) 2020-07-17
US20170206965A1 (en) 2017-07-20
TW201727657A (zh) 2017-08-01
TWI637397B (zh) 2018-10-01
US20170206980A1 (en) 2017-07-20
US10176883B2 (en) 2019-01-08
JP2018110002A (ja) 2018-07-12
EP3196888B1 (en) 2019-12-25
TW201830389A (zh) 2018-08-16
TWI613663B (zh) 2018-02-01
CN106981313B (zh) 2020-06-02
TWI627833B (zh) 2018-06-21
CN106981300B (zh) 2021-01-12
US20170206134A1 (en) 2017-07-20
TW201801091A (zh) 2018-01-01
CN108288477B (zh) 2020-11-27
JP6302020B2 (ja) 2018-03-28
TW201727634A (zh) 2017-08-01
EP3196887A1 (en) 2017-07-26
JP6389287B2 (ja) 2018-09-12
US10062446B2 (en) 2018-08-28
JP6479226B2 (ja) 2019-03-06
US9830991B2 (en) 2017-11-28
CN107045886B (zh) 2020-05-19
CN106981313A (zh) 2017-07-25
EP3196887B1 (en) 2019-12-04
TW201727662A (zh) 2017-08-01
EP3196888A1 (en) 2017-07-26
US20170206946A1 (en) 2017-07-20
JP2017139046A (ja) 2017-08-10
TWI610309B (zh) 2018-01-01
US9799410B2 (en) 2017-10-24
CN108320773B (zh) 2020-12-18
EP3614387A1 (en) 2020-02-26
CN107039057B (zh) 2019-04-05
US9792968B2 (en) 2017-10-17
US9613714B1 (en) 2017-04-04
TWI610312B (zh) 2018-01-01
US20170207773A1 (en) 2017-07-20
TW201728082A (zh) 2017-08-01
EP3614387B1 (en) 2020-09-30
JP2017130184A (ja) 2017-07-27
TWI640990B (zh) 2018-11-11
CN108288477A (zh) 2018-07-17

Similar Documents

Publication Publication Date Title
CN108320773A (zh) 自动设时复位脉冲生成器及具有脉冲生成器的存储器装置
US10365703B2 (en) Power management
EP3706126B1 (en) Techniques to mitigate selection failure for a memory device
CN105930903B (zh) 一种数模混合神经网络芯片体系结构
CN100483549C (zh) 电阻存储器件及其操作和形成方法及包含它的计算机系统
KR101433735B1 (ko) 비­휘발성 메모리 셀들을 위한 예측 열적 프리컨디셔닝 및 타이밍 제어
US20150009772A1 (en) Memory having power saving mode
US20130094271A1 (en) Connection of multiple semiconductor memory devices with chip enable function
US7180767B2 (en) Multi-level memory device and methods for programming and reading the same
WO2008079911A1 (en) Dynamic on-die termination of address and command signals
WO2012006468A1 (en) Methods and systems for replaceable synaptic weight storage in neuro-processors
US20150032979A1 (en) Self-adjusting phase change memory storage module
DE4330131C2 (de) Halbleiter-Speichervorrichtung
CN106575250A (zh) 使用nand页缓冲器来改善固态驱动器的传递缓冲器利用的方法与系统
CN102314926B (zh) 具有调节接地节点的存储器单元、阵列及其存取方法
WO2015116100A1 (en) Managing data using a number of non-volatile memory arrays
Wang et al. Canary replica feedback for near-DRV standby V DD scaling in a 90nm SRAM
WO2006121491A3 (en) Method and apparatus for low voltage write in a static random access memory
DE102006011720A1 (de) Speicher mit Datenzwischenspeicherschaltung, die einen Selektor umfasst
US20150149825A1 (en) Power Fail Latching Based on Monitoring Multiple Power Supply Voltages in a Storage Device
CN101447225B (zh) 改善内嵌式动态随机存取存储器速度的无干扰位线写入
CN108122570A (zh) 具有确定的时间窗口的存储器装置
JP2001525098A (ja) メモリ書込みマージンを改良するためにビットセル接地チョーキングを行う方法および装置
US5398265A (en) Computer subsystem reset by address dependent RC discharge
DE10321451A1 (de) Die Verwendung eines chipinternen Temperaturerfassungsschemas zum Wärmeschutz von DRAMs

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant