CN102290364B - 基板保持装置、具备其之曝光装置、元件制造方法 - Google Patents
基板保持装置、具备其之曝光装置、元件制造方法 Download PDFInfo
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- CN102290364B CN102290364B CN201110167423.9A CN201110167423A CN102290364B CN 102290364 B CN102290364 B CN 102290364B CN 201110167423 A CN201110167423 A CN 201110167423A CN 102290364 B CN102290364 B CN 102290364B
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Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-171116 | 2004-06-09 | ||
| JP2004171116 | 2004-06-09 | ||
| JP2004-205008 | 2004-07-12 | ||
| JP2004205008 | 2004-07-12 | ||
| CN2005800189332A CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800189332A Division CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102290364A CN102290364A (zh) | 2011-12-21 |
| CN102290364B true CN102290364B (zh) | 2016-01-13 |
Family
ID=35503355
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800189332A Expired - Fee Related CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201110167423.9A Expired - Fee Related CN102290364B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、元件制造方法 |
| CN201110167496.8A Expired - Fee Related CN102290365B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201310481917.3A Pending CN103558737A (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800189332A Expired - Fee Related CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110167496.8A Expired - Fee Related CN102290365B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201310481917.3A Pending CN103558737A (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8705008B2 (enExample) |
| EP (3) | EP3318928A1 (enExample) |
| JP (8) | JP5170228B2 (enExample) |
| KR (7) | KR101421870B1 (enExample) |
| CN (4) | CN1965389B (enExample) |
| HK (1) | HK1249935A1 (enExample) |
| IL (2) | IL179937A (enExample) |
| SG (3) | SG186621A1 (enExample) |
| TW (2) | TWI574300B (enExample) |
| WO (1) | WO2005122219A1 (enExample) |
Families Citing this family (96)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) * | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101528089B1 (ko) * | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| TW201804262A (zh) | 2003-12-03 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、元件製造方法 |
| KR101421870B1 (ko) * | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JPWO2006030910A1 (ja) * | 2004-09-17 | 2008-05-15 | 株式会社ニコン | 露光用基板、露光方法及びデバイス製造方法 |
| US8102512B2 (en) | 2004-09-17 | 2012-01-24 | Nikon Corporation | Substrate holding device, exposure apparatus, and device manufacturing method |
| EP1837896B1 (en) * | 2004-12-15 | 2015-09-09 | Nikon Corporation | Substrate holding apparatus, exposure apparatus and device manufacturing method |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4708876B2 (ja) * | 2005-06-21 | 2011-06-22 | キヤノン株式会社 | 液浸露光装置 |
| KR101340138B1 (ko) * | 2005-12-08 | 2013-12-10 | 가부시키가이샤 니콘 | 기판 보지 장치, 노광 장치, 노광 방법 및 디바이스 제조방법 |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2007083592A1 (ja) * | 2006-01-17 | 2007-07-26 | Nikon Corporation | 基板保持装置及び露光装置、並びにデバイス製造方法 |
| JPWO2007139017A1 (ja) * | 2006-05-29 | 2009-10-08 | 株式会社ニコン | 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法 |
| US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8208116B2 (en) * | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8040490B2 (en) * | 2006-12-01 | 2011-10-18 | Nikon Corporation | Liquid immersion exposure apparatus, exposure method, and method for producing device |
| JP2008192854A (ja) * | 2007-02-05 | 2008-08-21 | Canon Inc | 液浸露光装置 |
| US20080198346A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
| US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| TWI541615B (zh) * | 2007-07-13 | 2016-07-11 | 瑪波微影Ip公司 | 在微影裝置中交換晶圓的方法 |
| US8705010B2 (en) * | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| NL1036526A1 (nl) | 2008-02-14 | 2009-08-17 | Asml Netherlands Bv | Use of a coating, an article having the coating and a lithographic apparatus comprising the coating. |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| US9176393B2 (en) * | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| EP2131242A1 (en) * | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
| US20100045949A1 (en) * | 2008-08-11 | 2010-02-25 | Nikon Corporation | Exposure apparatus, maintaining method and device fabricating method |
| US20100283979A1 (en) * | 2008-10-31 | 2010-11-11 | Nikon Corporation | Exposure apparatus, exposing method, and device fabricating method |
| US8896806B2 (en) | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20100196832A1 (en) | 2009-01-30 | 2010-08-05 | Nikon Corporation | Exposure apparatus, exposing method, liquid immersion member and device fabricating method |
| WO2010103822A1 (ja) | 2009-03-10 | 2010-09-16 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
| US8953143B2 (en) * | 2009-04-24 | 2015-02-10 | Nikon Corporation | Liquid immersion member |
| US20100323303A1 (en) * | 2009-05-15 | 2010-12-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, and device fabricating method |
| US20110199591A1 (en) * | 2009-10-14 | 2011-08-18 | Nikon Corporation | Exposure apparatus, exposing method, maintenance method and device fabricating method |
| TWI643027B (zh) | 2009-11-09 | 2018-12-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法 |
| EP2523210A1 (en) | 2010-01-08 | 2012-11-14 | Nikon Corporation | Liquid-immersion member, exposing device, exposing method, and device manufacturing method |
| US20110222031A1 (en) | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013864A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013863A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US8937703B2 (en) | 2010-07-14 | 2015-01-20 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120012191A1 (en) | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120019804A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium |
| US20120019802A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium |
| US20120019803A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
| NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
| US20120162619A1 (en) | 2010-12-27 | 2012-06-28 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium |
| US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
| US20130016329A1 (en) | 2011-07-12 | 2013-01-17 | Nikon Corporation | Exposure apparatus, exposure method, measurement method, and device manufacturing method |
| US9329496B2 (en) | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
| US9256137B2 (en) | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| US20130050666A1 (en) | 2011-08-26 | 2013-02-28 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| JP2013102126A (ja) * | 2011-10-14 | 2013-05-23 | Fuji Electric Co Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
| US20130135594A1 (en) | 2011-11-25 | 2013-05-30 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| KR101911400B1 (ko) * | 2012-05-29 | 2018-10-24 | 에이에스엠엘 네델란즈 비.브이. | 대상물 홀더 및 리소그래피 장치 |
| US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| JP6119242B2 (ja) | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| CN103172271B (zh) * | 2013-03-15 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种涂布方法 |
| CN103676263B (zh) * | 2013-06-06 | 2016-05-25 | 凌晖科技股份有限公司 | 液晶面板的重制方法 |
| CN104425403B (zh) * | 2013-09-02 | 2017-12-12 | 日月光半导体制造股份有限公司 | 半导体封装件、其制造方法及其使用的切割冶具 |
| EP3051573A4 (en) * | 2013-09-25 | 2017-05-03 | Shibaura Mechatronics Corporation | Suction stage, bonding device, and method for manufacturing bonded substrate |
| CN105229774B (zh) | 2013-10-08 | 2019-01-11 | 株式会社尼康 | 液浸部件、曝光装置及曝光方法、以及器件制造方法 |
| US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
| CN105374709B (zh) * | 2014-08-07 | 2019-05-03 | 东京毅力科创株式会社 | 接合装置、接合系统以及接合方法 |
| EP3304108A1 (en) * | 2015-05-26 | 2018-04-11 | Rasco GmbH | A boat, assembly&method for handling electronic components |
| KR20170016547A (ko) | 2015-08-03 | 2017-02-14 | 삼성전자주식회사 | 척 테이블 및 그를 포함하는 기판 제조 장치 |
| CN105093588B (zh) * | 2015-08-24 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种支撑销及吸附机台 |
| JP6639175B2 (ja) * | 2015-09-29 | 2020-02-05 | 東京エレクトロン株式会社 | 乾燥装置及び乾燥処理方法 |
| CN105467779A (zh) * | 2016-01-04 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种曝光机及曝光方法 |
| EP3455677A1 (en) | 2016-05-12 | 2019-03-20 | ASML Netherlands B.V. | Extraction body for lithographic apparatus |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| JP6758920B2 (ja) * | 2016-06-01 | 2020-09-23 | キヤノン株式会社 | チャック、基板保持装置、パターン形成装置、及び物品の製造方法 |
| KR102616658B1 (ko) | 2017-06-06 | 2023-12-21 | 에이에스엠엘 네델란즈 비.브이. | 지지 테이블로부터 대상물을 언로딩하는 방법 |
| CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
| CN120447305A (zh) | 2017-10-12 | 2025-08-08 | Asml荷兰有限公司 | 用于在光刻设备中使用的衬底支架 |
| US20190259648A1 (en) * | 2018-02-20 | 2019-08-22 | Applied Materials, Inc. | Patterned vacuum chuck for double-sided processing |
| JP7198629B2 (ja) * | 2018-10-26 | 2023-01-04 | 日本特殊陶業株式会社 | 保持装置 |
| JP7154995B2 (ja) * | 2018-12-17 | 2022-10-18 | 株式会社Screenホールディングス | 基板処理装置 |
| EP3899666A1 (en) * | 2018-12-21 | 2021-10-27 | ASML Holding N.V. | Reticle sub-field thermal control |
| JP2022068575A (ja) * | 2020-10-22 | 2022-05-10 | 株式会社ディスコ | 洗浄装置 |
| US11728204B2 (en) * | 2020-10-23 | 2023-08-15 | Kla Corporation | High flow vacuum chuck |
| EP4206635A4 (en) * | 2021-05-28 | 2024-02-28 | BOE Technology Group Co., Ltd. | PIEZOELECTRIC SENSOR, PRODUCTION METHOD THEREOF AND DEVICE WITH HAPTIC FEEDBACK |
| JP2023044244A (ja) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | 半導体製造装置 |
| CN113727595B (zh) * | 2021-11-01 | 2022-02-15 | 广东科视光学技术股份有限公司 | 一种pcb板自动化曝光设备及方法 |
| TWI838138B (zh) * | 2023-02-24 | 2024-04-01 | 南茂科技股份有限公司 | 清潔裝置 |
| WO2024260656A1 (en) * | 2023-06-19 | 2024-12-26 | Asml Netherlands B.V. | Substrate support |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501175A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Family Cites Families (101)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| NL8204450A (nl) | 1982-11-17 | 1984-06-18 | Philips Nv | Verplaatsingsinrichting, in het bijzonder voor het stralingslithografisch behandelen van een substraat. |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DE3340079A1 (de) * | 1983-11-05 | 1985-05-15 | Brown, Boveri & Cie Ag, 6800 Mannheim | Speicherzellenverbindung |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JP2587953B2 (ja) * | 1987-09-30 | 1997-03-05 | 日立電子エンジニアリング株式会社 | レジスト塗布装置 |
| JPH01303720A (ja) * | 1988-06-01 | 1989-12-07 | Toshiba Corp | チャッキング装置 |
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
| JP3203719B2 (ja) * | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JP3173928B2 (ja) * | 1992-09-25 | 2001-06-04 | キヤノン株式会社 | 基板保持装置、基板保持方法および露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3940823B2 (ja) | 1994-12-26 | 2007-07-04 | 株式会社ニコン | ステージ装置及びその制御方法 |
| JPH09306802A (ja) * | 1996-05-10 | 1997-11-28 | Nikon Corp | 投影露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JP3709896B2 (ja) | 1995-06-15 | 2005-10-26 | 株式会社ニコン | ステージ装置 |
| KR970072024A (ko) | 1996-04-09 | 1997-11-07 | 오노 시게오 | 투영노광장치 |
| JP3709904B2 (ja) | 1996-11-14 | 2005-10-26 | 株式会社ニコン | 投影露光装置 |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH10135115A (ja) | 1996-11-01 | 1998-05-22 | Nikon Corp | 露光方法及び基準プレート |
| CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| JP3276601B2 (ja) * | 1997-01-22 | 2002-04-22 | 東京エレクトロン株式会社 | 洗浄処理方法及び洗浄処理装置 |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| KR20010031972A (ko) * | 1997-11-12 | 2001-04-16 | 오노 시게오 | 노광 장치, 디바이스 제조 장치 및 노광 장치의 제조 방법 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6897963B1 (en) * | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2001044097A (ja) | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 露光装置 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| JP2001183844A (ja) * | 1999-12-22 | 2001-07-06 | Sharp Corp | 露光方法 |
| DE10011130A1 (de) | 2000-03-10 | 2001-09-13 | Mannesmann Vdo Ag | Entlüftungseinrichtung für einen Kraftstoffbehälter |
| JP4700819B2 (ja) * | 2000-03-10 | 2011-06-15 | キヤノン株式会社 | 基板保持装置、半導体製造装置および半導体デバイス製造方法 |
| JP2001332609A (ja) | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| JP2001319865A (ja) | 2000-05-11 | 2001-11-16 | Canon Inc | 基板ステージ装置、露光装置および半導体デバイス製造方法 |
| JP2002231622A (ja) | 2000-11-29 | 2002-08-16 | Nikon Corp | ステージ装置及び露光装置 |
| JP2002200453A (ja) * | 2000-12-28 | 2002-07-16 | Matsushita Electric Ind Co Ltd | 塗布装置および塗布方法 |
| US6513796B2 (en) * | 2001-02-23 | 2003-02-04 | International Business Machines Corporation | Wafer chuck having a removable insert |
| JP3704064B2 (ja) * | 2001-07-05 | 2005-10-05 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US6801301B2 (en) * | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| AU2002354196A1 (en) * | 2001-12-17 | 2003-06-30 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, and device manufacturing method |
| JP4288694B2 (ja) * | 2001-12-20 | 2009-07-01 | 株式会社ニコン | 基板保持装置、露光装置及びデバイス製造方法 |
| JP3979464B2 (ja) * | 2001-12-27 | 2007-09-19 | 株式会社荏原製作所 | 無電解めっき前処理装置及び方法 |
| JP4205054B2 (ja) * | 2002-04-24 | 2009-01-07 | 株式会社ニコン | 露光システム及びデバイス製造方法 |
| WO2004008499A1 (en) * | 2002-07-17 | 2004-01-22 | Matsushita Electric Industrial Co. Ltd. | Method and apparatus for picking up semiconductor chip and suction and exfoliation tool up therefor |
| TWI307526B (en) * | 2002-08-06 | 2009-03-11 | Nikon Corp | Supporting device and the mamufacturing method thereof, stage device and exposure device |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP2004119497A (ja) | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | 半導体製造設備と方法 |
| JP4020741B2 (ja) * | 2002-10-01 | 2007-12-12 | 東京エレクトロン株式会社 | 液処理装置における気液分離回収装置 |
| JP4040423B2 (ja) | 2002-10-16 | 2008-01-30 | キヤノン株式会社 | 基板保持装置 |
| EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| CN101470360B (zh) * | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| CN101424883B (zh) * | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| CN1723541B (zh) * | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
| SG2012031738A (en) | 2003-04-11 | 2015-07-30 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| EP1486828B1 (en) * | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101528089B1 (ko) * | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
| KR101242886B1 (ko) * | 2003-08-29 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| WO2005043607A1 (ja) * | 2003-10-31 | 2005-05-12 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TW201804262A (zh) | 2003-12-03 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、元件製造方法 |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| ATE467902T1 (de) * | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| JP4506674B2 (ja) * | 2004-02-03 | 2010-07-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| KR101421870B1 (ko) * | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 |
| US8102512B2 (en) * | 2004-09-17 | 2012-01-24 | Nikon Corporation | Substrate holding device, exposure apparatus, and device manufacturing method |
-
2005
- 2005-06-08 KR KR1020127030679A patent/KR101421870B1/ko not_active Expired - Fee Related
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- 2005-06-08 EP EP05748927.0A patent/EP1788617B1/en not_active Expired - Lifetime
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501175A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
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