TWI574300B - Exposure apparatus, exposure method, and device manufacturing method - Google Patents
Exposure apparatus, exposure method, and device manufacturing method Download PDFInfo
- Publication number
- TWI574300B TWI574300B TW102120665A TW102120665A TWI574300B TW I574300 B TWI574300 B TW I574300B TW 102120665 A TW102120665 A TW 102120665A TW 102120665 A TW102120665 A TW 102120665A TW I574300 B TWI574300 B TW I574300B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- liquid
- plate member
- wall portion
- holding portion
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 734
- 239000007788 liquid Substances 0.000 claims description 633
- 230000003287 optical effect Effects 0.000 claims description 146
- 238000011084 recovery Methods 0.000 claims description 119
- 230000000149 penetrating effect Effects 0.000 claims description 19
- 230000009471 action Effects 0.000 claims description 9
- 239000012466 permeate Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 description 128
- 239000000463 material Substances 0.000 description 124
- 238000007654 immersion Methods 0.000 description 57
- 238000012545 processing Methods 0.000 description 48
- 239000005871 repellent Substances 0.000 description 46
- 230000007246 mechanism Effects 0.000 description 33
- 238000005286 illumination Methods 0.000 description 30
- 238000001179 sorption measurement Methods 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 230000003028 elevating effect Effects 0.000 description 23
- 238000005259 measurement Methods 0.000 description 23
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000001514 detection method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 101150108487 pst2 gene Proteins 0.000 description 9
- 102100021786 CMP-N-acetylneuraminate-poly-alpha-2,8-sialyltransferase Human genes 0.000 description 8
- 101000616698 Homo sapiens CMP-N-acetylneuraminate-poly-alpha-2,8-sialyltransferase Proteins 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000004064 recycling Methods 0.000 description 6
- 101000891579 Homo sapiens Microtubule-associated protein tau Proteins 0.000 description 5
- 102100040243 Microtubule-associated protein tau Human genes 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QLACRIKFZRFWRU-UHFFFAOYSA-N [4-oxo-4-(4-oxobutan-2-yloxy)butan-2-yl] 3-hydroxybutanoate Chemical compound CC(O)CC(=O)OC(C)CC(=O)OC(C)CC=O QLACRIKFZRFWRU-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012018 process simulation test Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004171116 | 2004-06-09 | ||
| JP2004205008 | 2004-07-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201344752A TW201344752A (zh) | 2013-11-01 |
| TWI574300B true TWI574300B (zh) | 2017-03-11 |
Family
ID=35503355
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102120665A TWI574300B (zh) | 2004-06-09 | 2005-06-09 | Exposure apparatus, exposure method, and device manufacturing method |
| TW094118986A TWI447780B (zh) | 2004-06-09 | 2005-06-09 | A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094118986A TWI447780B (zh) | 2004-06-09 | 2005-06-09 | A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8705008B2 (enExample) |
| EP (3) | EP2637061B1 (enExample) |
| JP (8) | JP5170228B2 (enExample) |
| KR (7) | KR101421870B1 (enExample) |
| CN (4) | CN1965389B (enExample) |
| HK (1) | HK1249935A1 (enExample) |
| IL (2) | IL179937A (enExample) |
| SG (3) | SG153813A1 (enExample) |
| TW (2) | TWI574300B (enExample) |
| WO (1) | WO2005122219A1 (enExample) |
Families Citing this family (96)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| SG2014014955A (en) | 2003-12-03 | 2014-07-30 | Nippon Kogaku Kk | Exposure apparatus, exposure method, method for producing device, and optical part |
| EP2637061B1 (en) * | 2004-06-09 | 2018-07-18 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20070054635A (ko) * | 2004-09-17 | 2007-05-29 | 가부시키가이샤 니콘 | 노광용 기판, 노광 방법 및 디바이스 제조 방법 |
| SG188899A1 (en) | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
| EP3285282A1 (en) * | 2004-12-15 | 2018-02-21 | Nikon Corporation | Exposure apparatus and device fabricating method |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4708876B2 (ja) * | 2005-06-21 | 2011-06-22 | キヤノン株式会社 | 液浸露光装置 |
| KR101539517B1 (ko) * | 2005-12-08 | 2015-07-24 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JPWO2007083592A1 (ja) * | 2006-01-17 | 2009-06-11 | 株式会社ニコン | 基板保持装置及び露光装置、並びにデバイス製造方法 |
| JPWO2007139017A1 (ja) * | 2006-05-29 | 2009-10-08 | 株式会社ニコン | 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法 |
| US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8040490B2 (en) * | 2006-12-01 | 2011-10-18 | Nikon Corporation | Liquid immersion exposure apparatus, exposure method, and method for producing device |
| JP2008192854A (ja) * | 2007-02-05 | 2008-08-21 | Canon Inc | 液浸露光装置 |
| US20080198346A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
| US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| TWI450047B (zh) * | 2007-07-13 | 2014-08-21 | Mapper Lithography Ip Bv | 微影系統、夾緊方法及晶圓台 |
| US8705010B2 (en) | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| NL1036526A1 (nl) * | 2008-02-14 | 2009-08-17 | Asml Netherlands Bv | Use of a coating, an article having the coating and a lithographic apparatus comprising the coating. |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
| EP2131242A1 (en) * | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
| TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
| JPWO2010050240A1 (ja) * | 2008-10-31 | 2012-03-29 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US8896806B2 (en) | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20100196832A1 (en) | 2009-01-30 | 2010-08-05 | Nikon Corporation | Exposure apparatus, exposing method, liquid immersion member and device fabricating method |
| JP5482784B2 (ja) | 2009-03-10 | 2014-05-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
| US8953143B2 (en) * | 2009-04-24 | 2015-02-10 | Nikon Corporation | Liquid immersion member |
| US20100323303A1 (en) * | 2009-05-15 | 2010-12-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, and device fabricating method |
| US20110199591A1 (en) * | 2009-10-14 | 2011-08-18 | Nikon Corporation | Exposure apparatus, exposing method, maintenance method and device fabricating method |
| TWI643027B (zh) | 2009-11-09 | 2018-12-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法 |
| WO2011083724A1 (ja) | 2010-01-08 | 2011-07-14 | 株式会社ニコン | 液浸部材、露光装置、露光方法、及びデバイス製造方法 |
| US20110222031A1 (en) | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013864A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013863A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US8937703B2 (en) | 2010-07-14 | 2015-01-20 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120012191A1 (en) | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120019803A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
| US20120019802A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium |
| US20120019804A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium |
| NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
| US20120162619A1 (en) | 2010-12-27 | 2012-06-28 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium |
| US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
| US20130016329A1 (en) | 2011-07-12 | 2013-01-17 | Nikon Corporation | Exposure apparatus, exposure method, measurement method, and device manufacturing method |
| US9329496B2 (en) | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
| US9256137B2 (en) | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| US20130050666A1 (en) | 2011-08-26 | 2013-02-28 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| JP2013102126A (ja) * | 2011-10-14 | 2013-05-23 | Fuji Electric Co Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
| US20130135594A1 (en) | 2011-11-25 | 2013-05-30 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| NL2010762A (en) | 2012-05-29 | 2013-12-02 | Asml Netherlands Bv | An object holder, a lithographic apparatus and a device manufacturing method. |
| US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP6119242B2 (ja) | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| CN103172271B (zh) * | 2013-03-15 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种涂布方法 |
| CN103676263B (zh) * | 2013-06-06 | 2016-05-25 | 凌晖科技股份有限公司 | 液晶面板的重制方法 |
| CN104425403B (zh) * | 2013-09-02 | 2017-12-12 | 日月光半导体制造股份有限公司 | 半导体封装件、其制造方法及其使用的切割冶具 |
| JP6348500B2 (ja) | 2013-09-25 | 2018-06-27 | 芝浦メカトロニクス株式会社 | 吸着ステージ、貼合装置、および貼合基板の製造方法 |
| CN105229774B (zh) | 2013-10-08 | 2019-01-11 | 株式会社尼康 | 液浸部件、曝光装置及曝光方法、以及器件制造方法 |
| US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
| CN105374709B (zh) * | 2014-08-07 | 2019-05-03 | 东京毅力科创株式会社 | 接合装置、接合系统以及接合方法 |
| WO2016188569A1 (en) * | 2015-05-26 | 2016-12-01 | Rasco Gmbh | A boat, assembly & method for handling electronic components |
| KR20170016547A (ko) | 2015-08-03 | 2017-02-14 | 삼성전자주식회사 | 척 테이블 및 그를 포함하는 기판 제조 장치 |
| CN105093588B (zh) * | 2015-08-24 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种支撑销及吸附机台 |
| JP6639175B2 (ja) * | 2015-09-29 | 2020-02-05 | 東京エレクトロン株式会社 | 乾燥装置及び乾燥処理方法 |
| CN105467779A (zh) * | 2016-01-04 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种曝光机及曝光方法 |
| NL2018653A (en) * | 2016-05-12 | 2017-11-15 | Asml Netherlands Bv | Extraction body for lithographic apparatus |
| JP6758920B2 (ja) * | 2016-06-01 | 2020-09-23 | キヤノン株式会社 | チャック、基板保持装置、パターン形成装置、及び物品の製造方法 |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| CN110741319B (zh) | 2017-06-06 | 2024-04-16 | Asml荷兰有限公司 | 从支撑台卸载物体的方法 |
| CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
| NL2021663A (en) | 2017-10-12 | 2019-04-17 | Asml Netherlands Bv | Substrate holder for use in a lithographic apparatus |
| WO2019164640A1 (en) | 2018-02-20 | 2019-08-29 | Applied Materials, Inc. | Patterned vacuum chuck for double-sided processing |
| JP7198629B2 (ja) * | 2018-10-26 | 2023-01-04 | 日本特殊陶業株式会社 | 保持装置 |
| JP7154995B2 (ja) * | 2018-12-17 | 2022-10-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| CN113168123A (zh) * | 2018-12-21 | 2021-07-23 | Asml控股股份有限公司 | 掩模版子场热控制 |
| JP2022068575A (ja) * | 2020-10-22 | 2022-05-10 | 株式会社ディスコ | 洗浄装置 |
| US11728204B2 (en) * | 2020-10-23 | 2023-08-15 | Kla Corporation | High flow vacuum chuck |
| EP4206635A4 (en) * | 2021-05-28 | 2024-02-28 | BOE Technology Group Co., Ltd. | PIEZOELECTRIC SENSOR, PRODUCTION METHOD THEREOF AND DEVICE WITH HAPTIC FEEDBACK |
| JP2023044244A (ja) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | 半導体製造装置 |
| CN113727595B (zh) * | 2021-11-01 | 2022-02-15 | 广东科视光学技术股份有限公司 | 一种pcb板自动化曝光设备及方法 |
| TWI838138B (zh) * | 2023-02-24 | 2024-04-01 | 南茂科技股份有限公司 | 清潔裝置 |
| WO2024260656A1 (en) * | 2023-06-19 | 2024-12-26 | Asml Netherlands B.V. | Substrate support |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270408A (ja) * | 1997-01-22 | 1998-10-09 | Tokyo Electron Ltd | 洗浄処理方法及び洗浄処理装置 |
| TW444270B (en) * | 1997-11-12 | 2001-07-01 | Nippon Kogaku Kk | Exposure apparatus, apparatus for fabricating device and fabricating method of exposure apparatus |
| JP2002200453A (ja) * | 2000-12-28 | 2002-07-16 | Matsushita Electric Ind Co Ltd | 塗布装置および塗布方法 |
| TW200403540A (en) * | 2002-04-24 | 2004-03-01 | Sendai Nikon Corp | Exposure system and device manufacturing method |
| TW200403547A (en) * | 2002-08-23 | 2004-03-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| NL8204450A (nl) | 1982-11-17 | 1984-06-18 | Philips Nv | Verplaatsingsinrichting, in het bijzonder voor het stralingslithografisch behandelen van een substraat. |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DE3340079A1 (de) * | 1983-11-05 | 1985-05-15 | Brown, Boveri & Cie Ag, 6800 Mannheim | Speicherzellenverbindung |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JP2587953B2 (ja) * | 1987-09-30 | 1997-03-05 | 日立電子エンジニアリング株式会社 | レジスト塗布装置 |
| JPH01303720A (ja) * | 1988-06-01 | 1989-12-07 | Toshiba Corp | チャッキング装置 |
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法，露光装置，並びに位置検出方法及び装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるｌｓｉ製造縮小投影露光装置の光学系 |
| JP3203719B2 (ja) * | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JP3173928B2 (ja) * | 1992-09-25 | 2001-06-04 | キヤノン株式会社 | 基板保持装置、基板保持方法および露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3940823B2 (ja) | 1994-12-26 | 2007-07-04 | 株式会社ニコン | ステージ装置及びその制御方法 |
| JPH09306802A (ja) * | 1996-05-10 | 1997-11-28 | Nikon Corp | 投影露光装置 |
| JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JP3709896B2 (ja) | 1995-06-15 | 2005-10-26 | 株式会社ニコン | ステージ装置 |
| JP3709904B2 (ja) | 1996-11-14 | 2005-10-26 | 株式会社ニコン | 投影露光装置 |
| KR970072024A (ko) | 1996-04-09 | 1997-11-07 | 오노 시게오 | 투영노광장치 |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH10135115A (ja) | 1996-11-01 | 1998-05-22 | Nikon Corp | 露光方法及び基準プレート |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
| WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6897963B1 (en) * | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2001044097A (ja) * | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 露光装置 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| JP2001183844A (ja) * | 1999-12-22 | 2001-07-06 | Sharp Corp | 露光方法 |
| JP4700819B2 (ja) * | 2000-03-10 | 2011-06-15 | キヤノン株式会社 | 基板保持装置、半導体製造装置および半導体デバイス製造方法 |
| DE10011130A1 (de) | 2000-03-10 | 2001-09-13 | Mannesmann Vdo Ag | Entlüftungseinrichtung für einen Kraftstoffbehälter |
| JP2001332609A (ja) | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| JP2001319865A (ja) | 2000-05-11 | 2001-11-16 | Canon Inc | 基板ステージ装置、露光装置および半導体デバイス製造方法 |
| JP2002231622A (ja) | 2000-11-29 | 2002-08-16 | Nikon Corp | ステージ装置及び露光装置 |
| US6513796B2 (en) * | 2001-02-23 | 2003-02-04 | International Business Machines Corporation | Wafer chuck having a removable insert |
| JP3704064B2 (ja) * | 2001-07-05 | 2005-10-05 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US6801301B2 (en) * | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| WO2003052804A1 (en) * | 2001-12-17 | 2003-06-26 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, and device manufacturing method |
| JP4288694B2 (ja) | 2001-12-20 | 2009-07-01 | 株式会社ニコン | 基板保持装置、露光装置及びデバイス製造方法 |
| JP3979464B2 (ja) * | 2001-12-27 | 2007-09-19 | 株式会社荏原製作所 | 無電解めっき前処理装置及び方法 |
| EP1535312B1 (en) * | 2002-07-17 | 2007-09-26 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for picking up semiconductor chip and suction and exfoliation tool up therefor |
| TWI307526B (en) * | 2002-08-06 | 2009-03-11 | Nikon Corp | Supporting device and the mamufacturing method thereof, stage device and exposure device |
| JP2004119497A (ja) * | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | 半導体製造設備と方法 |
| JP4020741B2 (ja) * | 2002-10-01 | 2007-12-12 | 東京エレクトロン株式会社 | 液処理装置における気液分離回収装置 |
| JP4040423B2 (ja) * | 2002-10-16 | 2008-01-30 | キヤノン株式会社 | 基板保持装置 |
| CN101382738B (zh) * | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| CN101713932B (zh) * | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| CN101872135B (zh) * | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
| KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
| EP2613195B1 (en) | 2003-04-11 | 2015-12-16 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486828B1 (en) * | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101520591B1 (ko) * | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP2466383B1 (en) | 2003-07-08 | 2014-11-19 | Nikon Corporation | Wafer table for immersion lithography |
| WO2005022616A1 (ja) * | 2003-08-29 | 2005-03-10 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| WO2005043607A1 (ja) | 2003-10-31 | 2005-05-12 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| SG2014014955A (en) | 2003-12-03 | 2014-07-30 | Nippon Kogaku Kk | Exposure apparatus, exposure method, method for producing device, and optical part |
| WO2005057636A1 (ja) | 2003-12-15 | 2005-06-23 | Nikon Corporation | ステージ装置、露光装置、及び露光方法 |
| ATE467902T1 (de) * | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| KR101377815B1 (ko) * | 2004-02-03 | 2014-03-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| EP2637061B1 (en) * | 2004-06-09 | 2018-07-18 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| SG188899A1 (en) * | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
-
2005
- 2005-06-08 EP EP13162896.8A patent/EP2637061B1/en not_active Expired - Lifetime
- 2005-06-08 KR KR1020127030679A patent/KR101421870B1/ko not_active Expired - Fee Related
- 2005-06-08 SG SG200903927-2A patent/SG153813A1/en unknown
- 2005-06-08 KR KR1020147032469A patent/KR101681101B1/ko not_active Expired - Fee Related
- 2005-06-08 CN CN2005800189332A patent/CN1965389B/zh not_active Expired - Fee Related
- 2005-06-08 KR KR1020137000176A patent/KR101511876B1/ko not_active Expired - Fee Related
- 2005-06-08 WO PCT/JP2005/010458 patent/WO2005122219A1/ja not_active Ceased
- 2005-06-08 EP EP05748927.0A patent/EP1788617B1/en not_active Expired - Lifetime
- 2005-06-08 SG SG10201710046XA patent/SG10201710046XA/en unknown
- 2005-06-08 SG SG2012089082A patent/SG186621A1/en unknown
- 2005-06-08 KR KR1020067026606A patent/KR101227290B1/ko not_active Expired - Fee Related
- 2005-06-08 CN CN201110167496.8A patent/CN102290365B/zh not_active Expired - Fee Related
- 2005-06-08 KR KR1020127002569A patent/KR101323967B1/ko not_active Expired - Fee Related
- 2005-06-08 KR KR1020197000596A patent/KR20190006080A/ko not_active Ceased
- 2005-06-08 KR KR1020167032818A patent/KR20160137690A/ko not_active Abandoned
- 2005-06-08 CN CN201310481917.3A patent/CN103558737A/zh active Pending
- 2005-06-08 US US11/629,070 patent/US8705008B2/en not_active Expired - Fee Related
- 2005-06-08 EP EP17202731.0A patent/EP3318928A1/en not_active Withdrawn
- 2005-06-08 CN CN201110167423.9A patent/CN102290364B/zh not_active Expired - Fee Related
- 2005-06-09 TW TW102120665A patent/TWI574300B/zh not_active IP Right Cessation
- 2005-06-09 TW TW094118986A patent/TWI447780B/zh not_active IP Right Cessation
-
2006
- 2006-12-10 IL IL179937A patent/IL179937A/en active IP Right Grant
-
2010
- 2010-12-13 JP JP2010277195A patent/JP5170228B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012082567A patent/JP5565430B2/ja not_active Expired - Fee Related
-
2013
- 2013-10-06 IL IL228755A patent/IL228755A/en active IP Right Grant
- 2013-12-24 JP JP2013266038A patent/JP5733382B2/ja not_active Expired - Fee Related
-
2014
- 2014-03-27 US US14/227,310 patent/US20140226144A1/en not_active Abandoned
- 2014-11-25 JP JP2014237628A patent/JP5920447B2/ja not_active Expired - Lifetime
-
2015
- 2015-10-09 JP JP2015201563A patent/JP6115610B2/ja not_active Expired - Lifetime
-
2016
- 2016-10-13 JP JP2016202145A patent/JP6319394B2/ja not_active Expired - Lifetime
-
2017
- 2017-10-20 JP JP2017203047A patent/JP2018018099A/ja active Pending
-
2018
- 2018-07-18 HK HK18109322.0A patent/HK1249935A1/en unknown
- 2018-11-29 JP JP2018223986A patent/JP2019040214A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270408A (ja) * | 1997-01-22 | 1998-10-09 | Tokyo Electron Ltd | 洗浄処理方法及び洗浄処理装置 |
| TW444270B (en) * | 1997-11-12 | 2001-07-01 | Nippon Kogaku Kk | Exposure apparatus, apparatus for fabricating device and fabricating method of exposure apparatus |
| JP2002200453A (ja) * | 2000-12-28 | 2002-07-16 | Matsushita Electric Ind Co Ltd | 塗布装置および塗布方法 |
| TW200403540A (en) * | 2002-04-24 | 2004-03-01 | Sendai Nikon Corp | Exposure system and device manufacturing method |
| TW200403547A (en) * | 2002-08-23 | 2004-03-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI574300B (zh) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP4513534B2 (ja) | 露光装置及び露光方法、デバイス製造方法 | |
| TWI470371B (zh) | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component | |
| JP4826146B2 (ja) | 露光装置、デバイス製造方法 | |
| JP5445612B2 (ja) | 露光装置及び露光方法、デバイス製造方法 | |
| HK1164543B (en) | Substrate holding device, exposure apparatus having the same, device manufacturing method | |
| HK1189279A (en) | Substrate holding device, exposure apparatus having the same and methods | |
| HK1164542B (en) | Substrate holding device, exposure apparatus having the same, device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |