CN102148239B - 绝缘栅极半导体器件 - Google Patents

绝缘栅极半导体器件 Download PDF

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CN102148239B
CN102148239B CN201110036148.7A CN201110036148A CN102148239B CN 102148239 B CN102148239 B CN 102148239B CN 201110036148 A CN201110036148 A CN 201110036148A CN 102148239 B CN102148239 B CN 102148239B
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CN102148239A (zh
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河野宪司
都筑幸夫
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201110036148.7A 2010-02-05 2011-02-09 绝缘栅极半导体器件 Active CN102148239B (zh)

Applications Claiming Priority (4)

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JP2010024029 2010-02-05
JP024029/2010 2010-02-05
JP2010193473A JP4957840B2 (ja) 2010-02-05 2010-08-31 絶縁ゲート型半導体装置
JP193473/2010 2010-08-31

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CN102148239B true CN102148239B (zh) 2014-03-05

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JP (1) JP4957840B2 (ja)
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DE (1) DE102011003654B4 (ja)

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JP5282822B2 (ja) * 2009-09-07 2013-09-04 トヨタ自動車株式会社 ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
CN102396056B (zh) 2009-12-15 2014-03-12 丰田自动车株式会社 半导体装置的制造方法
JP5594276B2 (ja) * 2010-12-08 2014-09-24 株式会社デンソー 絶縁ゲート型半導体装置
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CN103582936B (zh) * 2011-06-09 2016-04-20 丰田自动车株式会社 半导体装置以及半导体装置的制造方法
JP5937413B2 (ja) * 2011-06-15 2016-06-22 株式会社デンソー 半導体装置
JP5348276B2 (ja) 2011-07-04 2013-11-20 株式会社デンソー 半導体装置
CN102956479B (zh) * 2011-08-24 2015-06-24 大中积体电路股份有限公司 绝缘栅双极晶体管结构及其制作方法
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US9184255B2 (en) * 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
JP5973730B2 (ja) 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
JP5620421B2 (ja) * 2012-02-28 2014-11-05 株式会社東芝 半導体装置
JP5644793B2 (ja) * 2012-03-02 2014-12-24 株式会社デンソー 半導体装置
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JP5942737B2 (ja) * 2012-09-24 2016-06-29 株式会社デンソー 半導体装置
JP6127421B2 (ja) * 2012-09-24 2017-05-17 株式会社デンソー 半導体装置
JP5696713B2 (ja) * 2012-11-06 2015-04-08 株式会社デンソー 半導体装置及びその検査方法
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JP6077309B2 (ja) * 2013-01-11 2017-02-08 株式会社豊田中央研究所 ダイオード及びダイオードを内蔵した半導体装置
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JP6421570B2 (ja) * 2013-12-20 2018-11-14 株式会社デンソー 半導体装置
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6354458B2 (ja) * 2014-08-27 2018-07-11 富士電機株式会社 半導体装置
US9478649B2 (en) * 2015-02-05 2016-10-25 Changzhou ZhongMin Semi-Tech Co., Ltd Semiconductor device
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JP6443267B2 (ja) 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
CN106960867B (zh) * 2016-01-08 2020-04-21 常州中明半导体技术有限公司 一种绝缘栅双极型晶体管器件
US9768285B1 (en) * 2016-03-16 2017-09-19 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
WO2017187477A1 (ja) * 2016-04-25 2017-11-02 三菱電機株式会社 半導体装置
KR101870808B1 (ko) * 2016-06-03 2018-06-27 현대오트론 주식회사 전력 반도체 소자 및 그 제조방법
JP6565814B2 (ja) * 2016-07-21 2019-08-28 株式会社デンソー 半導体装置
JP6589817B2 (ja) * 2016-10-26 2019-10-16 株式会社デンソー 半導体装置
JP6674395B2 (ja) 2017-02-03 2020-04-01 株式会社東芝 半導体装置
JP2018152426A (ja) * 2017-03-10 2018-09-27 富士電機株式会社 半導体装置
JP7024273B2 (ja) * 2017-07-14 2022-02-24 富士電機株式会社 半導体装置
CN107644903B (zh) * 2017-09-14 2020-03-17 全球能源互联网研究院 具有高抗短路能力的沟槽栅igbt器件及其制备方法
CN109524396B (zh) * 2017-09-20 2023-05-12 株式会社东芝 半导体装置
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JP6946219B2 (ja) * 2018-03-23 2021-10-06 株式会社東芝 半導体装置
JP7115000B2 (ja) * 2018-04-04 2022-08-09 富士電機株式会社 半導体装置
CN111684604B (zh) * 2018-08-10 2023-08-18 富士电机株式会社 半导体装置
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置
CN109920841B (zh) * 2019-03-26 2020-12-18 电子科技大学 一种槽栅双极型晶体管
JP7486399B2 (ja) * 2020-10-21 2024-05-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
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CN116504822B (zh) * 2023-05-29 2024-02-09 上海林众电子科技有限公司 基于沟槽栅的逆导型igbt

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Publication number Publication date
JP2011181886A (ja) 2011-09-15
CN102148239A (zh) 2011-08-10
DE102011003654A1 (de) 2011-08-11
DE102011003654B4 (de) 2019-10-31
DE102011003654A8 (de) 2012-05-03
JP4957840B2 (ja) 2012-06-20
US20110193132A1 (en) 2011-08-11
US8405122B2 (en) 2013-03-26

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