BRPI0821501B8 - Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. - Google Patents

Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Info

Publication number
BRPI0821501B8
BRPI0821501B8 BRPI0821501A BRPI0821501A BRPI0821501B8 BR PI0821501 B8 BRPI0821501 B8 BR PI0821501B8 BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 B8 BRPI0821501 B8 BR PI0821501B8
Authority
BR
Brazil
Prior art keywords
indium
sulfur
copper
gallium
preparing
Prior art date
Application number
BRPI0821501A
Other languages
English (en)
Inventor
Huang Fuqiang
Wang Yaoming
Original Assignee
Shanghai Inst Ceramics Cas
Shandong Sino Shine Photoelectric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Inst Ceramics Cas, Shandong Sino Shine Photoelectric Co Ltd filed Critical Shanghai Inst Ceramics Cas
Publication of BRPI0821501A2 publication Critical patent/BRPI0821501A2/pt
Publication of BRPI0821501B1 publication Critical patent/BRPI0821501B1/pt
Publication of BRPI0821501B8 publication Critical patent/BRPI0821501B8/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

MÉTODO PARA PREPARAÇÃO DE UMA CAMADA DE ABSORÇÃO LEVE DE CÉLULA SOLAR DE FILME FINO DE COBRE-ÍNDIO-GÁLIO-ENXOFRE- SELÊNIO, é provido; tal método emprega uma técnica química de fase líquida sem vácuo, a qual compreende os seguintes passos: formação de solução-fonte contendo cobre, índio, gália, enxofre e selênio; uso desta solução para formar um filme ou substrato precursor pelo processo de fase líquida sem vácuo; secagem e recozimento do filme precursor. Assim, um filme composto de cobre-índio-gália-enxofre-selênio é adquirido.
BRPI0821501A 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. BRPI0821501B8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200710173785.2 2007-12-29
CNA2007101737852A CN101471394A (zh) 2007-12-29 2007-12-29 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
PCT/CN2008/073805 WO2009089754A1 (fr) 2007-12-29 2008-12-29 Procédé de préparation d'une couche d'absorption de la lumière d'une pile solaire à film de cuivre-indium-gallium-soufre-sélénium

Publications (3)

Publication Number Publication Date
BRPI0821501A2 BRPI0821501A2 (pt) 2015-06-16
BRPI0821501B1 BRPI0821501B1 (pt) 2019-02-12
BRPI0821501B8 true BRPI0821501B8 (pt) 2022-08-23

Family

ID=40828635

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821501A BRPI0821501B8 (pt) 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Country Status (8)

Country Link
US (1) US9735297B2 (pt)
EP (1) EP2234168A4 (pt)
JP (1) JP5646342B2 (pt)
KR (1) KR101633388B1 (pt)
CN (2) CN101471394A (pt)
BR (1) BRPI0821501B8 (pt)
RU (1) RU2446510C1 (pt)
WO (1) WO2009089754A1 (pt)

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BRPI0821501B1 (pt) 2019-02-12
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