BRPI0821501A2 - Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. - Google Patents
Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.Info
- Publication number
- BRPI0821501A2 BRPI0821501A2 BRPI0821501-4A BRPI0821501A BRPI0821501A2 BR PI0821501 A2 BRPI0821501 A2 BR PI0821501A2 BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 A2 BRPI0821501 A2 BR PI0821501A2
- Authority
- BR
- Brazil
- Prior art keywords
- copper
- preparation
- thin film
- light
- solar cell
- Prior art date
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 title 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 230000031700 light absorption Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710173785.2 | 2007-12-29 | ||
CNA2007101737852A CN101471394A (zh) | 2007-12-29 | 2007-12-29 | 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法 |
PCT/CN2008/073805 WO2009089754A1 (fr) | 2007-12-29 | 2008-12-29 | Procédé de préparation d'une couche d'absorption de la lumière d'une pile solaire à film de cuivre-indium-gallium-soufre-sélénium |
Publications (3)
Publication Number | Publication Date |
---|---|
BRPI0821501A2 true BRPI0821501A2 (pt) | 2015-06-16 |
BRPI0821501B1 BRPI0821501B1 (pt) | 2019-02-12 |
BRPI0821501B8 BRPI0821501B8 (pt) | 2022-08-23 |
Family
ID=40828635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0821501A BRPI0821501B8 (pt) | 2007-12-29 | 2008-12-29 | Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. |
Country Status (8)
Country | Link |
---|---|
US (1) | US9735297B2 (pt) |
EP (1) | EP2234168A4 (pt) |
JP (1) | JP5646342B2 (pt) |
KR (1) | KR101633388B1 (pt) |
CN (2) | CN101471394A (pt) |
BR (1) | BRPI0821501B8 (pt) |
RU (1) | RU2446510C1 (pt) |
WO (1) | WO2009089754A1 (pt) |
Families Citing this family (78)
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US20120280362A1 (en) * | 2009-12-18 | 2012-11-08 | The Regents Of The University Of California | Simple route for alkali metal incorporation in solution-processed crystalline semiconductors |
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WO2009089754A1 (fr) | 2009-07-23 |
KR101633388B1 (ko) | 2016-06-24 |
US9735297B2 (en) | 2017-08-15 |
JP2011508439A (ja) | 2011-03-10 |
RU2446510C1 (ru) | 2012-03-27 |
EP2234168A4 (en) | 2015-04-29 |
CN101960610A (zh) | 2011-01-26 |
CN101471394A (zh) | 2009-07-01 |
US20110008927A1 (en) | 2011-01-13 |
EP2234168A1 (en) | 2010-09-29 |
RU2010131761A (ru) | 2012-02-10 |
CN101960610B (zh) | 2012-04-11 |
JP5646342B2 (ja) | 2014-12-24 |
BRPI0821501B8 (pt) | 2022-08-23 |
BRPI0821501B1 (pt) | 2019-02-12 |
KR20100099753A (ko) | 2010-09-13 |
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