CN110752272B - 一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法 - Google Patents
一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法 Download PDFInfo
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- CN110752272B CN110752272B CN201910994160.5A CN201910994160A CN110752272B CN 110752272 B CN110752272 B CN 110752272B CN 201910994160 A CN201910994160 A CN 201910994160A CN 110752272 B CN110752272 B CN 110752272B
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- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 53
- 238000004544 sputter deposition Methods 0.000 claims abstract description 42
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- 239000002243 precursor Substances 0.000 claims abstract description 14
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 239000011733 molybdenum Substances 0.000 claims abstract description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 11
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims description 9
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- 150000001875 compounds Chemical class 0.000 claims description 8
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- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 6
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052700 potassium Inorganic materials 0.000 claims description 5
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- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
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- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 150000001880 copper compounds Chemical class 0.000 claims description 4
- 150000002259 gallium compounds Chemical class 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 150000002472 indium compounds Chemical class 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
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- 229940065287 selenium compound Drugs 0.000 claims description 4
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- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 3
- 229940044658 gallium nitrate Drugs 0.000 claims description 3
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000003112 potassium compounds Chemical class 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910001451 bismuth ion Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/20—Metallic material, boron or silicon on organic substrates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明属于太阳能电池制备领域，具体涉及一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法。具体步骤如下：先在基底上溅射钼电极，然后配制CIGSe前驱体溶液，将前驱体溶液旋涂在基底上制备CIGSe预制膜，加热并硒化退火，得CIGSe薄膜；然后在CIGSe薄膜上制备硫化镉薄膜，然后在硫化镉薄膜上依次溅射氧化锌和铟掺杂氧化锡薄膜，最后进行银电极蒸镀，即得到柔性CIGSe薄膜太阳能电池。通过在CIGSe前驱体溶液中引入铋和钾的化合物，来促进CIGSe晶体的生长，钝化晶界缺陷，进而提高CIGSe太阳能电池的性能。本发明环保安全成本低，有效提高了CIGSe薄膜太阳能电池效率。
Description
技术领域
本发明属于太阳能电池制备领域，具体涉及一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法。
背景技术
太阳能具有取之不尽用之不竭、分布广泛、安全、绿色环保等优点，是最具潜力的可再生能源。太阳能电池是将太阳能直接转换为电能的装置，成为了全球各国在可再生能源领域的主要研究方向。目前硅太阳电池已广泛应用于人们生产、生活中，如大型电站、分布式电站、光伏路灯等，但由于硅太阳能电池片薄脆易碎，需要使用钢化玻璃进行封装保护，这使得硅太阳能电池十分厚重，无法弯曲，不能应用到更广泛的人们生活中。而柔性太阳能电池易于提高太阳电池的质量比功率，而且相比于玻璃封装硅太阳能电池而言，有很多新的优点：可以卷曲；电池厚度很薄、质量轻；性能稳定、转换效率高；使用的半导体材料少，有效地降低了原材料的成本；生产过程中能耗少；易于卷对卷（roll-to-roll）大面积连续生产、便于携带和运输。可弯曲折叠的柔性太阳能电池可以广泛的应用在凹凸不平的场合，成为当前和未来相当长的一段时间内太阳能电池的热点领域。
实用化的柔性太阳能电池对吸光层有着苛刻的要求，需要吸光层稳定、高效、固态和轻薄，就当前的技术进展而言，铜铟镓硒（CIGSe）薄膜太阳能电池是制备柔性太阳太阳能电池的首选。但当前商业化制备柔性CIGSe太阳能电池的都需要高真空的设备和苛刻的制备条件，并且核心技术被国外公司所掌握，使得柔性CIGSe太阳能电池的制备成本居高不下。而柔性CIGSe太阳能电池的技术关键就是聚酰亚胺或者不锈钢基底无法在高温条件下长时间硒化，导致CIGSe吸光层的微结构性能差和不良晶界缺陷多，从而导致柔性CIGSe太阳能电池的效率偏低。
中国专利CN105118877A公开了一种铜铟镓硫硒薄膜材料的制备方法，首先是在基底上制备Cu(InxCa1-x)aSb预制层，然后进行硒化退火，得到Cu(InxCa1-x)a(SySe1-y)b薄膜材料，此方法中使用反应溅射制备Cu(InxCa1-x)aSb预制层，需要使用铜源、铟源、镓源和硫源等4种以上的多源靶材，使得制备成本高昂；另外，在后续硒化退火中使用二乙基硒气体对Cu(InxCa1-x)aSb预制层进行硒化，需要高真空的设备和苛刻的制备条件，这使得CIGSSe太阳能电池的制备成本居高不下。同时，此方法中硒化温度需要达到650℃，而聚酰亚胺基底、不锈钢基底等柔性基底无法在如此高温条件下长时间硒化，这将导致CIGSSe吸光层的微结构性能差和不良晶界缺陷多，从而导致柔性CIGSSe太阳能电池的效率偏低。
发明内容
为解决现有技术中CIGSe太阳能电池的制备需要高真空的设备和苛刻的制备条件，成本高、光电转化效率偏低的问题，本发明提供一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法。
为实现上述目的，本发明采用以下技术方案：
一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，包括以下步骤：
步骤A.在洁净的聚酰亚胺/不锈钢基底上溅射1μm的钼电极；
步骤B.配制CIGSe前驱体溶液：取铜粉或铜化合物、铟粉或铟化合物、镓粉或镓化合物、硒粉或硒化合物与添加剂以摩尔比1.1:0.83:0.35:2.29:0.01～0.9混合，加入溶剂，密封加热搅拌至将上述固体完全溶解，所述添加剂为含铋化合物和含钾化合物的组合；
步骤C.将步骤B制备的CIGSe前驱体溶液旋涂在镀有钼电极的聚酰亚胺/不锈钢基底上，得CIGSe预制膜；
步骤D.将CIGSe预制膜上表面朝下置于石墨盒中，并加入硒粉，然后在惰性气体保护下进行硒化退火，冷却至室温，得到CIGSe薄膜；
步骤E.在CIGSe薄膜上制备硫化镉薄膜：将CdSO4溶解于去离子水中，边搅拌边加入氨水和上述CIGSe薄膜，并加入硫脲，加热后将CIGSe薄膜取出并用去离子水反复冲洗；
步骤F.在硫化镉薄膜上溅射氧化锌薄膜；
步骤G.在氧化锌薄膜上溅射铟掺杂氧化锡薄膜；
步骤H.在铟掺杂氧化锡薄膜上蒸镀银电极。
进一步地，所述步骤A中溅射钼电极具体步骤为：在氩气压力为2～3Pa、直流溅射功率为200～250W的条件下溅射30～60min，然后调节氩气压力为1～0.1Pa再溅射30～60min。
进一步地，所述步骤B中加热温度为45～60℃，时间为2～6h；所述铜化合物为硝酸铜，铟化合物为硝酸铟，镓化合物为硝酸镓，硒化合物为二氧化硒，所述含铋化合物为氯化铋或硝酸铋，含钾化合物为氯化钾或氢氧化钾，溶剂为乙二胺和乙二硫醇的混合溶液。
进一步地，所述步骤C中旋涂的具体步骤如下：在2000～3000rpm的转速下旋涂20～40s，然后在280～320℃的条件下加热2～5min，重复8～10次后在280～320℃下加热3～5min。
进一步地，所述步骤D中加入硒粉的量为200～500mg，惰性气体为氩气或氮气，退火温度为480～500℃，退火时间为10～30min。
进一步地，所述步骤E中CdSO4、去离子水、氨水和硫脲的加入比为76.8mg：200 mL：12.5mL：110mg，加热温度为60～80℃，加热时间为10～15min。
进一步地，所述步骤F中的溅射参数如下：功率为100～150W，氩气压力为0.1～0.5Pa，溅射时间为5～10min。
进一步地，所述步骤G中的溅射参数如下：功率为100～150W，氩气压力为0.1～0.5Pa，溅射时间为3～5min。
进一步地，所述步骤H中热蒸镀电流为50～80A，蒸镀时间为5～10min。
与现有技术相比，本发明具有以下有益效果：
本发明通过环保、廉价的溶液法和固态硒源硒化法来制备CIGSe薄膜，安全、对设备要求低，能够极大的降低CIGSe的生产成本。同时在前驱体溶液中引入微量的铋离子（Bi3 +）和碱金属离子（K+）作为低熔点助剂，其中Bi3+在硒化过程中能形成准液态金属硒化铋（Bi2Se3），在提高CIGSe晶体质量的同时降低CIGSe晶体的所需要的温度；K+在硒化的过程中，能够进入CIGSe晶体间隙中，减少CIGSe晶体中的不良缺陷，同时也能够促进CIGSe晶粒生长。通过引入微量的铋离子Bi3+和碱金属离子K+，极大的降低CIGSe吸光层硒化的时间和温度，在柔性基底可承受的范围内（450～500℃）获得高质量的CIGSe吸光层，从而制备高效率的柔性CIGSe太阳能电池。
附图说明
图1为实施例1制备的柔性CIGSe薄膜太阳能电池表面扫描电镜图；
图2为实施例1制备的柔性CIGSe薄膜太阳能电池I-V测试图。
具体实施方式
以下结合实施例和附图对本发明做进一步详细说明。
实施例1
步骤A、在洁净的聚酰亚胺/不锈钢基底上溅射钼电极：在氩气的压力达到2Pa时，打开直流溅射电源，将功率调节到200W，预溅射5 min，然后移开金属挡板，在基底上溅射30min，之后将腔体内的氩气压力调节到1Pa，溅射30 min，关闭电源，得到致密度和结合力都良好的钼电极。
步骤B、配制CIGSe前驱体溶液：首先，称量铜粉（0.0699g，1.10mmol）、铟粉（0.0960g，0.83mmol）、镓粉（0.0250g，0.35mmol）、硒粉（0.1812g，2.29mmol）、氯化铋粉末（0.0104g，0.0456mmol）和氯化钾粉末（0.0034g，0.0456mmol）加入25mL的锥形瓶中；接着加入5mL乙二胺和5mL乙二硫醇。最后，将圆底烧瓶密封后放在加热台上，60℃下磁力搅拌2h，所有的物质完全溶解，形成CIGSe分子前驱体溶液。在密闭的环境中，溶液可以保存数周。
步骤C、CIGSe预制膜的制备：在聚酰亚胺/不锈钢基底上旋涂CIGSe前驱体溶液，在2000 rpm 的转速下旋涂40s，在320℃下加热2min，然后重复8次旋涂加热，最后再在320℃下加热3min，以利于完全去除有机配体，最后得到1600nm厚度的CIGSe薄膜。
步骤D、CIGSe预制膜热处理：将CIGSe预制膜上表面朝下置于石墨盒中，并加入硒粉后放于快速升温炉中，在惰性气体保护下进行硒化退火，退火温度为480℃，持续时间10min然后立刻关闭快速升温炉，打开快速升温炉的炉门，以利于石墨盒迅速冷却到室温，得到CIGSe薄膜。
步骤E、在CIGSe薄膜上制备硫化镉薄膜：准确称取76.8 mg CdSO4 溶解于200mL去离子水中，之后取12.5 mL的氨水在搅拌过程中缓慢滴加到大烧杯中，滴加过程中先产生白色絮状沉淀，随着氨水的继续滴加，白色沉淀消失，变成均一透明的溶液。将CIGSe样品放入大烧杯中，同时将准确称取的110mg硫脲溶解于上述溶液中，将溶液缓慢加热到60℃，并在该温度下保温15min，待硫化镉薄膜生长完全之后，将CIGSe样品从大烧杯中取出，使用去离子反复冲洗，得到50nm厚的硫化镉薄膜。
步骤F、在硫化镉薄膜上制备氧化锌薄膜。电池阻挡层氧化锌的制备是使用交流磁控溅射氧化锌靶材完成。其操作的工艺流程与直流磁控溅射相类似，溅射参数为：功率100W，氩气压力为0.4Pa，溅射时间为5min，得到50nm厚的氧化锌薄膜。
步骤G、在氧化锌薄膜上制备铟掺杂氧化锡（ITO）薄膜。用磁控溅射直流溅射铟掺杂氧化锡，溅射参数为：功率100W，氩气压力为0.5Pa，时间为3min，得到200 nm厚的铟掺杂氧化锡薄膜。
步骤H、蒸镀银电极。选择钨绞丝为银丝载体，热蒸镀电流为50A，蒸镀10min，得到1μm厚的银电极，柔性CIGSe薄膜太阳能电池制备完成。
图1为本实施例所制备的柔性不锈钢基底上的CIGSe薄膜表面扫描电镜图，从图中可以看出，所制备得到的CIGSe薄膜的晶体质量高，晶粒尺寸大且十分致密，可以制备出高转换效率的柔性CIGSe薄膜太阳能电池。
图2为本实施例所制备的柔性CIGSe薄膜太阳能电池的光电性能测试结果，使用SAN-EI公司的XEF-300太阳光模拟器和Keithley公司的2400数字源表组成的太阳能电池测试系统测试得到太阳能电池伏安特性曲线（I-V测试图），从图中可以看出，制备所得的柔性CIGSe薄膜太阳能电池的开路电压（Voc）为619 mV，短路电流（Jsc）为26.78 mA/cm2，填充因子（FF）为66.13%，光电转换效率（Eff）为11.19%，在柔性CIGSe薄膜太阳能电池中达到国际一流水平。
实施例2
步骤A、在洁净的聚酰亚胺/不锈钢基底上溅射钼电极：在氩气的压力达到3Pa时，打开直流溅射电源，将功率调节到250W，预溅射5 min，然后移开金属挡板，在基底上溅射60min，之后将腔体内的氩气压力调节到0.1Pa，溅射60min，关闭电源，得到致密度和结合力都良好的钼电极。
步骤B、配制CIGSe前驱体溶液：首先，称量硝酸铜（0.206g，1.10mmol）、硝酸铟（0.250g，0.83mmol）、硝酸镓（0.0895g，0.35mmol）、二氧化硒（0.2541g，2.29mmol）、硝酸铋粉末（0.193g，0.4mmol）和氢氧化钾粉末（0.0228g，0.4mmol）加入25mL的锥形瓶中；接着加入5mL乙二胺和5mL乙二硫醇。最后，将圆底烧瓶密封后放在加热台上，45℃下磁力搅拌6h，所有的物质完全溶解，形成CIGSe分子前驱体溶液。在密闭的环境中，溶液可以保存数周。
步骤C、CIGSe预制膜的制备：在聚酰亚胺/不锈钢基底上旋涂CIGSe前驱体溶液，在3000 rpm 的转速下旋涂20s，在280℃下加热5min，然后重复6次旋涂加热，最后再在280℃下加热5min，以利于完全去除有机配体，最后得到约1200nm厚度的CIGSe薄膜。
步骤D、CIGSe预制膜热处理：将CIGSe预制膜上表面朝下置于石墨盒中，并加入500g硒粉后放于快速升温炉中，在氮气保护下进行硒化退火，退火温度为500℃，持续时间30min然后立刻关闭快速升温炉，打开快速升温炉的炉门，以利于石墨盒迅速冷却到室温，得到CIGSe薄膜。
步骤E、在CIGSe薄膜上制备硫化镉薄膜：准确称取76.8 mg CdSO4 溶解于200mL去离子水中，之后取12.5 mL的氨水在搅拌过程中缓慢滴加到大烧杯中，滴加过程中先产生白色絮状沉淀，随着氨水的继续滴加，白色沉淀消失，变成均一透明的溶液。将CIGSe样品放入大烧杯中，同时将准确称取的110mg硫脲溶解于上述溶液中，将溶液缓慢加热到80℃，并在该温度下保温10min，待硫化镉薄膜生长完全之后，将CIGSe样品从大烧杯中取出，使用去离子反复冲洗，得到60nm厚的硫化镉薄膜。
步骤F、在硫化镉薄膜上制备氧化锌薄膜。电池阻挡层氧化锌的制备是使用交流磁控溅射氧化锌靶材完成。其操作的工艺流程与直流磁控溅射相类似，溅射参数为：功率150W，氩气压力为0.1Pa，溅射时间为10min，得到80nm厚的氧化锌薄膜。
步骤G、在氧化锌薄膜上制备铟掺杂氧化锡（ITO）薄膜。用磁控溅射直流溅射铟掺杂氧化锡，溅射参数为：功率150W，氩气压力为0.1Pa，时间为5min，得到300 nm厚的铟掺杂氧化锡薄膜。
步骤H、蒸镀银电极。选择钨绞丝为银丝载体，热蒸镀电流为80A，蒸镀5min，得到1.5μm厚的银电极。柔性CIGSe薄膜太阳能电池制备完成。
实施例3
本实施例中步骤与实施例1大致相似，相同之处不再赘述，不同之处在于步骤B中未添加氯化铋粉末。
实施例4
本实施例中步骤与实施例1大致相似，相同之处不再赘述，不同之处在于步骤B中未添加氯化钾粉末。
实施例5
本实施例中步骤与实施例1大致相似，相同之处不再赘述，不同之处在于步骤B中未添加氯化铋粉末和氯化钾粉末。
在室温、光强为100mW/cm2的条件下，使用SAN-EI公司的XEF-300太阳光模拟器测试实施例1～4所制得的CIGSe太阳能电池的光电转换效率，电池的有效面积为0.37cm2。测试结果如表1所示。
由上表可以看出，未添加氯化铋粉末和氯化钾粉末时，柔性CIGSe太阳能电池的光电转换效率为7.35%，而在分别添加氯化铋粉末、氯化钾粉末后，柔性CIGSe太阳能电池的光电转换效率为9.36%、9.64%，分别提高了27.35%、31.16%，在同时添加氯化铋粉末、氯化钾粉末后，柔性CIGSe太阳能电池的光电转换效率为11.19%，相比于未添加氯化铋粉末、氯化钾粉末的样品，光电转换效率提高了52.24%，柔性CIGSe太阳能电池的性能得到了极大的提升。因此，在柔性CIGSe太阳能电池中同时引入铋和钾，是一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法。
以上所述之实施例，只是本发明的较佳实施例而已，仅仅用以解释本发明，并非限制本发明实施范围，对于本技术领域的技术人员来说，当然可根据本说明书中所公开的技术内容，通过置换或改变的方式轻易做出其它的实施方式，故凡在本发明的原理上所作的变化和改进等，均应包括于本发明申请专利范围内。
Claims (8)
1.一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，包括以下步骤：
步骤A.在洁净的聚酰亚胺/不锈钢基底上溅射1μm的钼电极；
步骤B.配制CIGSe前驱体溶液：取铜粉或铜化合物、铟粉或铟化合物、镓粉或镓化合物、硒粉或硒化合物与添加剂以摩尔比1.1:0.83:0.35:2.29:0.01～0.9混合，加入溶剂，密封加热搅拌至固体完全溶解，所述添加剂为含铋化合物和含钾化合物的组合；
步骤C.将步骤B制备的CIGSe前驱体溶液旋涂在镀有钼电极的聚酰亚胺/不锈钢基底上，得CIGSe预制膜；
步骤D.将CIGSe预制膜上表面朝下置于石墨盒中，并加入硒粉，然后在惰性气体保护下进行硒化退火，冷却至室温，得到CIGSe薄膜；加入硒粉的量为200～500mg，惰性气体为氩气或氮气，退火温度为480～500℃，退火时间为10～30min；
步骤E.在CIGSe薄膜上制备硫化镉薄膜：将CdSO4溶解于去离子水中，边搅拌边加入氨水和上述CIGSe薄膜，并加入硫脲，加热后将CIGSe薄膜取出并用去离子水反复冲洗；
步骤F.在硫化镉薄膜上溅射氧化锌薄膜；
步骤G.在氧化锌薄膜上溅射铟掺杂氧化锡薄膜；
步骤H.在铟掺杂氧化锡薄膜上蒸镀银电极。
2.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤A中溅射钼电极具体步骤为：在氩气压力为2～3Pa、直流溅射功率为200～250W的条件下溅射30～60min，然后调节氩气压力为1～0.1Pa再溅射30～60min。
3.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤B中加热温度为45～60℃，时间为2～6h；所述铜化合物为硝酸铜，铟化合物为硝酸铟，镓化合物为硝酸镓，硒化合物为二氧化硒，所述含铋化合物为氯化铋或硝酸铋，含钾化合物为氯化钾或氢氧化钾，溶剂为乙二胺和乙二硫醇的混合溶液。
4.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤C中旋涂的具体步骤如下：在2000～3000rpm的转速下旋涂20～40s，然后在280～320℃的条件下加热2～5min，重复8～10次后在280～320℃下加热3～5min。
5.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤E中CdSO4、去离子水、氨水和硫脲的加入比为76.8mg：200 mL：12.5mL：110mg，加热温度为60～80℃，加热时间为10～15min。
6.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤F中的溅射参数如下：功率为100～150W，氩气压力为0.1～0.5Pa，溅射时间为5～10min。
7.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤G中的溅射参数如下：功率为100～150W，氩气压力为0.1～0.5Pa，溅射时间为3～5min。
8.根据权利要求1所述的一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法，其特征在于，所述步骤H中热蒸镀电流为50～80A，蒸镀时间为5～10min。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719625A (zh) * | 2005-06-03 | 2006-01-11 | 清华大学 | 铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法 |
| CN101471394A (zh) * | 2007-12-29 | 2009-07-01 | 中国科学院上海硅酸盐研究所 | 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法 |
| CN101789470A (zh) * | 2010-02-12 | 2010-07-28 | 昆山正富机械工业有限公司 | 非真空制作铜铟镓硒吸收层的方法 |
| CN103400896A (zh) * | 2013-07-24 | 2013-11-20 | 中国科学院上海高等研究院 | 一种铜铟镓硒柔性薄膜太阳能电池及其制备方法 |
| CN103474505A (zh) * | 2012-06-06 | 2013-12-25 | 尚越光电科技有限公司 | 铜铟镓硒薄膜太阳能电池大规模生产中的碱金属掺杂方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100850000B1 (ko) * | 2005-09-06 | 2008-08-01 | 주식회사 엘지화학 | 태양전지 흡수층의 제조방법 |
| US9397238B2 (en) * | 2011-09-19 | 2016-07-19 | First Solar, Inc. | Method of etching a semiconductor layer of a photovoltaic device |
-
2019
- 2019-10-18 CN CN201910994160.5A patent/CN110752272B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719625A (zh) * | 2005-06-03 | 2006-01-11 | 清华大学 | 铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法 |
| CN101471394A (zh) * | 2007-12-29 | 2009-07-01 | 中国科学院上海硅酸盐研究所 | 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法 |
| CN101789470A (zh) * | 2010-02-12 | 2010-07-28 | 昆山正富机械工业有限公司 | 非真空制作铜铟镓硒吸收层的方法 |
| CN103474505A (zh) * | 2012-06-06 | 2013-12-25 | 尚越光电科技有限公司 | 铜铟镓硒薄膜太阳能电池大规模生产中的碱金属掺杂方法 |
| CN103400896A (zh) * | 2013-07-24 | 2013-11-20 | 中国科学院上海高等研究院 | 一种铜铟镓硒柔性薄膜太阳能电池及其制备方法 |
Non-Patent Citations (1)
| Title |
|---|
| Bismuth-ion doped Cu(In,Ga)Se2 thin films: Preparation, microstructures, and electrical properties;Fu-Shan Chen等;《SOLAR ENERGY MATERIALS AND SOLAR CELLS》;20140222;第124卷;第166-171页 * |
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