BR112017002107A2 - ?método para formulação de materiais de célula solar de perovskita e material de perovskita? - Google Patents
?método para formulação de materiais de célula solar de perovskita e material de perovskita?Info
- Publication number
- BR112017002107A2 BR112017002107A2 BR112017002107A BR112017002107A BR112017002107A2 BR 112017002107 A2 BR112017002107 A2 BR 112017002107A2 BR 112017002107 A BR112017002107 A BR 112017002107A BR 112017002107 A BR112017002107 A BR 112017002107A BR 112017002107 A2 BR112017002107 A2 BR 112017002107A2
- Authority
- BR
- Brazil
- Prior art keywords
- lead halide
- perovskite
- formulation
- solar cell
- solvent
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 title abstract 3
- 238000009472 formulation Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 150000004820 halides Chemical class 0.000 abstract 7
- 239000003973 paint Substances 0.000 abstract 4
- 239000002243 precursor Substances 0.000 abstract 4
- 239000002904 solvent Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
- B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/19—Monitoring patterns of pulse trains
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
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Abstract
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462032137P | 2014-08-01 | 2014-08-01 | |
US62/032,137 | 2014-08-01 | ||
US14/711,330 | 2015-05-13 | ||
US14/711,330 US9305715B2 (en) | 2014-08-01 | 2015-05-13 | Method of formulating perovskite solar cell materials |
PCT/US2015/042864 WO2016019124A1 (en) | 2014-08-01 | 2015-07-30 | Method of formulating perovskite solar cell materials |
Publications (2)
Publication Number | Publication Date |
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BR112017002107A2 true BR112017002107A2 (pt) | 2017-11-21 |
BR112017002107B1 BR112017002107B1 (pt) | 2020-10-27 |
Family
ID=55180744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112017002107-2A BR112017002107B1 (pt) | 2014-08-01 | 2015-07-30 | método para formulação de materiais de célula solar de perovskita |
Country Status (12)
Country | Link |
---|---|
US (6) | US9305715B2 (pt) |
EP (2) | EP3195372B1 (pt) |
JP (2) | JP6301548B2 (pt) |
KR (8) | KR102519361B1 (pt) |
CN (2) | CN107078219B (pt) |
AU (5) | AU2015296288B2 (pt) |
BR (1) | BR112017002107B1 (pt) |
CA (3) | CA3010113C (pt) |
ES (1) | ES2748700T3 (pt) |
MX (2) | MX369793B (pt) |
PL (1) | PL3195372T3 (pt) |
WO (1) | WO2016019124A1 (pt) |
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US9416279B2 (en) * | 2013-11-26 | 2016-08-16 | Hunt Energy Enterprises, L.L.C. | Bi- and tri-layer interfacial layers in perovskite material devices |
KR101666563B1 (ko) * | 2014-04-28 | 2016-10-27 | 성균관대학교산학협력단 | 페로브스카이트 태양전지 및 그의 제조 방법 |
US9305715B2 (en) * | 2014-08-01 | 2016-04-05 | Hunt Energy Enterprises Llc | Method of formulating perovskite solar cell materials |
TWI553892B (zh) * | 2015-12-31 | 2016-10-11 | 台灣中油股份有限公司 | 具鈣鈦礦施體層之太陽能電池模組 |
CN105609635B (zh) * | 2016-03-17 | 2018-05-15 | 东华大学 | 一种在空气中制备高结晶度钙钛矿薄膜的方法 |
US20190058135A1 (en) * | 2016-05-27 | 2019-02-21 | The Florida State University Research Foundation, Inc. | Perovskite based charge transport layers for thin film optoelecronic devices and methods of making |
WO2018005749A1 (en) * | 2016-06-29 | 2018-01-04 | Alliance For Sustainable Energy, Llc | Methods for making perovskite solar cells having improved hole-transport layers |
DE102017005884A1 (de) * | 2016-07-07 | 2018-01-11 | Merck Patent Gmbh | Elektronisches Schaltelement |
US9880458B1 (en) | 2017-04-17 | 2018-01-30 | Hee Solar, L.L.C. | Hybrid perovskite material processing |
US11165144B2 (en) | 2017-04-20 | 2021-11-02 | Hewlett-Packard Development Company, L.P. | Device antennas |
US11205735B2 (en) | 2017-05-05 | 2021-12-21 | Universidad De Antioquia | Low temperature p-i-n hybrid mesoporous optoelectronic device |
US10700226B2 (en) * | 2017-05-25 | 2020-06-30 | Boise State University | Optically activated transistor, switch, and photodiode |
US11316484B2 (en) * | 2017-05-25 | 2022-04-26 | Boise State University | Optically gated transistor selector for variable resistive memory device |
CN107474632A (zh) * | 2017-08-25 | 2017-12-15 | 深圳市华星光电半导体显示技术有限公司 | 喷墨打印用钙钛矿墨水及其制备方法 |
WO2019050906A1 (en) * | 2017-09-06 | 2019-03-14 | Alliance For Sustainable Energy, Llc | ORGANIC-INORGANIC PEROVSKITE MATERIALS AND METHODS OF MAKING SAME |
CN109065723A (zh) * | 2018-07-13 | 2018-12-21 | 华中科技大学 | 一种基于添加剂提升太阳能电池开路电压的方法 |
US10907050B2 (en) | 2018-11-21 | 2021-02-02 | Hee Solar, L.L.C. | Nickel oxide sol-gel ink |
CN111362808A (zh) * | 2018-12-26 | 2020-07-03 | 东泰高科装备科技有限公司 | 钙钛矿薄膜的制备方法及太阳能电池 |
US20210088823A1 (en) * | 2019-09-25 | 2021-03-25 | Novatek Microelectronics Corp. | Fingerprint recognition apparatus |
CN111312906B (zh) * | 2020-02-28 | 2023-08-15 | 陕西师范大学 | 一种无机钙钛矿太阳电池及其制备方法 |
CN111525034B (zh) * | 2020-04-27 | 2022-03-15 | 电子科技大学 | 一种高效稳定的混合维度钙钛矿太阳能电池的制备方法 |
KR102347937B1 (ko) * | 2020-06-02 | 2022-01-07 | 한국원자력연구원 | 2차원 페로브스카이트 박막의 제조 방법 및 2차원 페로브스카이트 박막 |
CN112186110B (zh) * | 2020-09-28 | 2022-11-25 | 中山大学 | 一种有机无机杂化钙钛矿甲基胺碘化铅表面原位生长有机钝化膜的制备方法 |
KR102496956B1 (ko) * | 2020-10-28 | 2023-02-06 | 포항공과대학교 산학협력단 | 박막 트랜지스터 및 이의 제조 방법 |
CN115196883B (zh) * | 2021-11-16 | 2024-04-05 | 国科大杭州高等研究院 | 一种钙钛矿介孔玻璃的制备方法及其应用 |
CN114276289A (zh) * | 2021-12-24 | 2022-04-05 | 山西大学 | 一种二维单层dj型铅溴杂化钙钛矿及制备方法和应用 |
WO2023147338A2 (en) * | 2022-01-28 | 2023-08-03 | The University Of North Carolina At Chapel Hill | Defect engineering in wide bandgap perovskites for efficient and stable fully textured perovskite-silicon tandem solar cells |
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EP2693503A1 (en) | 2012-08-03 | 2014-02-05 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof |
HUE059781T2 (hu) * | 2012-09-18 | 2022-12-28 | Univ Oxford Innovation Ltd | Optoelektronikai eszköz |
TWI485154B (zh) | 2013-05-09 | 2015-05-21 | Univ Nat Cheng Kung | 具鈣鈦礦結構吸光材料之有機混成太陽能電池及其製造方法 |
EP2822009A1 (en) * | 2013-07-01 | 2015-01-07 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Solar cell and process for producing the same |
JP2015119102A (ja) | 2013-12-19 | 2015-06-25 | アイシン精機株式会社 | ハイブリッド型太陽電池 |
AU2015222678B2 (en) * | 2014-02-26 | 2018-11-22 | Commonwealth Scientific And Industrial Research Organisation | Process of forming a photoactive layer of a perovskite photoactive device |
US11217751B2 (en) * | 2014-04-03 | 2022-01-04 | The Hong Kong Polytechnic University | Crystal control and stability for high-performance perovskite solar cell |
CN104091888B (zh) | 2014-07-17 | 2016-08-17 | 湖北大学 | 一种钙钛矿型太阳能电池及其制备方法 |
US9305715B2 (en) * | 2014-08-01 | 2016-04-05 | Hunt Energy Enterprises Llc | Method of formulating perovskite solar cell materials |
US20160155974A1 (en) * | 2014-12-01 | 2016-06-02 | The Regents Of The University Of California | Complex pnictide metal halides for optoelectronic applications |
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