BR112017002107A2 - ?método para formulação de materiais de célula solar de perovskita e material de perovskita? - Google Patents

?método para formulação de materiais de célula solar de perovskita e material de perovskita?

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Publication number
BR112017002107A2
BR112017002107A2 BR112017002107A BR112017002107A BR112017002107A2 BR 112017002107 A2 BR112017002107 A2 BR 112017002107A2 BR 112017002107 A BR112017002107 A BR 112017002107A BR 112017002107 A BR112017002107 A BR 112017002107A BR 112017002107 A2 BR112017002107 A2 BR 112017002107A2
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Brazil
Prior art keywords
lead halide
perovskite
formulation
solar cell
solvent
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BR112017002107A
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English (en)
Other versions
BR112017002107B1 (pt
Inventor
A Chute Jerred
D Irwin Michael
V Dhas Vivek
Original Assignee
Hunt Energy Entpr Llc
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Publication date
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Publication of BR112017002107A2 publication Critical patent/BR112017002107A2/pt
Publication of BR112017002107B1 publication Critical patent/BR112017002107B1/pt

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    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
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    • H01G9/2009—Solid electrolytes
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    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials
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    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
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    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Sustainable Energy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

trata-se de um método para preparar materiais de perovskita fotoativos. o método compreende a etapa de preparar uma tinta precursora de haleto de chumbo. a preparação de uma tinta precursora de haleto de chumbo compreende as etapas de: introduzir um haleto de chumbo no interior de um vaso, introduzir um primeiro solvente no vaso e colocar o haleto de chumbo em contato com o primeiro solvente para dissolver o haleto de chumbo. o método compreende adicionalmente depositar a tinta precursora de haleto de chumbo sobre um substrato, secar a tinta precursora de haleto de chumbo para formar um filme fino, recozer o filme fino e enxaguar o filme fino com um segundo solvente e um sal.
BR112017002107-2A 2014-08-01 2015-07-30 método para formulação de materiais de célula solar de perovskita BR112017002107B1 (pt)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462032137P 2014-08-01 2014-08-01
US62/032,137 2014-08-01
US14/711,330 2015-05-13
US14/711,330 US9305715B2 (en) 2014-08-01 2015-05-13 Method of formulating perovskite solar cell materials
PCT/US2015/042864 WO2016019124A1 (en) 2014-08-01 2015-07-30 Method of formulating perovskite solar cell materials

Publications (2)

Publication Number Publication Date
BR112017002107A2 true BR112017002107A2 (pt) 2017-11-21
BR112017002107B1 BR112017002107B1 (pt) 2020-10-27

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US (6) US9305715B2 (pt)
EP (2) EP3195372B1 (pt)
JP (2) JP6301548B2 (pt)
KR (8) KR102519361B1 (pt)
CN (2) CN107078219B (pt)
AU (5) AU2015296288B2 (pt)
BR (1) BR112017002107B1 (pt)
CA (3) CA3010113C (pt)
ES (1) ES2748700T3 (pt)
MX (2) MX369793B (pt)
PL (1) PL3195372T3 (pt)
WO (1) WO2016019124A1 (pt)

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CN112186110B (zh) * 2020-09-28 2022-11-25 中山大学 一种有机无机杂化钙钛矿甲基胺碘化铅表面原位生长有机钝化膜的制备方法
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