JP6301548B2 - ペロブスカイト太陽電池材料を形成する方法 - Google Patents
ペロブスカイト太陽電池材料を形成する方法 Download PDFInfo
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- JP6301548B2 JP6301548B2 JP2017505481A JP2017505481A JP6301548B2 JP 6301548 B2 JP6301548 B2 JP 6301548B2 JP 2017505481 A JP2017505481 A JP 2017505481A JP 2017505481 A JP2017505481 A JP 2017505481A JP 6301548 B2 JP6301548 B2 JP 6301548B2
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- Prior art keywords
- layer
- lead
- lead halide
- iodide
- materials
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- 238000000034 method Methods 0.000 title claims description 36
- 239000000463 material Substances 0.000 title description 225
- 150000004820 halides Chemical class 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 41
- 239000002243 precursor Substances 0.000 claims description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000002904 solvent Substances 0.000 claims description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 10
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 10
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 6
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical compound I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 claims description 6
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 6
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims description 6
- UUDRLGYROXTISK-UHFFFAOYSA-N carbamimidoylazanium;iodide Chemical compound I.NC(N)=N UUDRLGYROXTISK-UHFFFAOYSA-N 0.000 claims description 5
- JJMDCOVWQOJGCB-UHFFFAOYSA-N 5-aminopentanoic acid Chemical compound [NH3+]CCCCC([O-])=O JJMDCOVWQOJGCB-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- CGYOOUFUZMYXGA-UHFFFAOYSA-N 1,2,2-triaminoethenylazanium iodide Chemical compound [I-].NC(=C(N)N)[NH3+] CGYOOUFUZMYXGA-UHFFFAOYSA-N 0.000 claims description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 2
- 229940117389 dichlorobenzene Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 269
- 230000032258 transport Effects 0.000 description 56
- 239000007787 solid Substances 0.000 description 50
- 239000000975 dye Substances 0.000 description 45
- 238000000576 coating method Methods 0.000 description 40
- 239000011248 coating agent Substances 0.000 description 39
- 239000011133 lead Substances 0.000 description 39
- 239000011149 active material Substances 0.000 description 34
- 210000004027 cell Anatomy 0.000 description 25
- 229910010413 TiO 2 Inorganic materials 0.000 description 24
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 17
- -1 polyethylene Polymers 0.000 description 17
- 239000010936 titanium Substances 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 13
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000011244 liquid electrolyte Substances 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 10
- 239000013545 self-assembled monolayer Substances 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 239000013335 mesoporous material Substances 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 8
- 239000002094 self assembled monolayer Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 235000001014 amino acid Nutrition 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000007784 solid electrolyte Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 239000004471 Glycine Substances 0.000 description 6
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 150000001413 amino acids Chemical class 0.000 description 6
- 150000001450 anions Chemical class 0.000 description 6
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000002892 organic cations Chemical class 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 5
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000004475 Arginine Substances 0.000 description 5
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 5
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 5
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 5
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 5
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 5
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 5
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 5
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 235000018417 cysteine Nutrition 0.000 description 5
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 5
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 235000013922 glutamic acid Nutrition 0.000 description 5
- 239000004220 glutamic acid Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- 125000005647 linker group Chemical group 0.000 description 5
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 235000019260 propionic acid Nutrition 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 229940005605 valeric acid Drugs 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 description 4
- 150000001336 alkenes Chemical class 0.000 description 4
- 150000001345 alkine derivatives Chemical class 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000005036 alkoxyphenyl group Chemical group 0.000 description 4
- 150000001350 alkyl halides Chemical class 0.000 description 4
- 125000005037 alkyl phenyl group Chemical group 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 4
- 239000010452 phosphate Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 150000003346 selenoethers Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
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- 150000003573 thiols Chemical class 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 3
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- 239000010949 copper Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
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- RUDATBOHQWOJDD-UHFFFAOYSA-N (3beta,5beta,7alpha)-3,7-Dihydroxycholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)CC2 RUDATBOHQWOJDD-UHFFFAOYSA-N 0.000 description 2
- LBUJPTNKIBCYBY-UHFFFAOYSA-N 1,2,3,4-tetrahydroquinoline Chemical compound C1=CC=C2CCCNC2=C1 LBUJPTNKIBCYBY-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910008449 SnF 2 Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- AFQYBWJTZUGQBS-UHFFFAOYSA-N [I].[Sn].[Cs] Chemical class [I].[Sn].[Cs] AFQYBWJTZUGQBS-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
- B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/107—Post-treatment of applied coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/19—Monitoring patterns of pulse trains
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
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Description
鉛ハロゲン化物前駆体インクを調製するステップであって、
鉛ハロゲン化物を容器に導入するステップと、
第1の溶媒を前記容器に導入するステップと、
前記鉛ハロゲン化物を前記第1の溶媒と接触させ、前記鉛ハロゲン化物を溶解するステップと、
を有するステップと、
前記鉛ハロゲン化物前駆体インクを基板上に設置するステップと、
前記鉛ハロゲン化物前駆体インクを乾燥させ、薄膜を形成するステップと、
前記薄膜を熱処理するステップと、
第2の溶媒および塩で、前記薄膜を洗浄するステップと、
を有する方法が提供される。
図1、3、4、5に示す太陽電池の各例を参照して、あるPVの実施例について説明する。例えば、ある実施例によるPV構造は、実質的に、基板-アノード-IFL-活性層-IFL-カソードの形態である。ある実施例の活性層は、光活性であり、および/または光活性材料を含んでも良い。従来から知られているような他の層および材料が、電池内で利用されても良い。また、「活性層」という用語の使用は、限定的意図ではなく、いかなる他の層の特性を、明示的にまたは暗示的に定めても良いことに留意する必要がある。例えば、ある実施例では、IFLの一方または両方は、これらが半導体的である限り、活性である。特に、図4を参照すると、模式的なPVセル2610が描かれており、PV内には、ある層の高い界面特性が示されている。PV2610は、DSSC PVの実施例のような、いくつかのPV装置に適用可能な一般構造を表す。PVセル2610は、ガラス(または太陽光線に対して透明な同様の材料)の透明層2612を有し、これにより、太陽光線2614は、層内を透過することができる。また、ある実施例の透明層は、(例えば図1の基板層1507のように)基板とも称され、これは、例えば、ガラス、ポリエチレン、PET、カプトン、石英、アルミニウム箔、金箔、または鋼のような、1または2以上の各種剛性または可撓性材料を有しても良い。光活性層2616は、電子ドナーまたはp型材料2618と、電子アクセプタまたはn型材料2620とで構成される。活性層、または図4に示すような光活性層2616は、2つの導電性電極層2622および2624の間に挟まれる。図4において、電極層2622は、ITO材料である。前述のように、ある実施例の活性層は、必ずしも光活性であるで必要はないが、図4に示された装置では、そのようになっている。電極層2624は、アルミニウム材料である。従来の他の材料を使用しても良い。また、セル2610は、界面層(IFL)2626を有し、この層は、図4に示す例では、PEDOT:PSS材料である。IFLは、電荷分離を支援しても良い。ある実施例では、IFL2626は、自己組織化モノレイヤ(SAM)または薄膜として、本発明による光活性有機化合物を有する。他の実施例では、IFL2626は、薄いコーティングバイレイヤを有し、これについては後述する。また、装置のアルミニウムカソード側には、IFL2627があっても良い。ある実施例では、装置のアルミニウムカソード側のIFL2627は、自己組織化モノレイヤ(SAM)または薄膜として、本発明による光活性有機化合物を、さらにあるいは代わりに有しても良い。他の実施例では、装置のアルミニウムカソード側のIFL2627は、薄いコーティングバイレイヤ(以降に示す)を、さらにあるいは代わりに有しても良い。ある実施例によるIFLは、半導体的性質を有し、p型またはn型であっても良い。ある実施例では、装置のカソード側のIFL(例えば図4に示すIFL2627)は、p型であり、装置のアノード側のIFL(例えば図4に示すIFL2626)は、n型であっても良い。ただし、他の実施例では、カソード側のIFLは、n型であり、アノード側のIFLは、p型であっても良い。セル2610は、リード2630、およびバッテリのような放電ユニット2632に取り付けられる。
ある実施例では、本発明により、薄いコーティングIFLを含むPV内の1または2以上の界面層の有意な材料および構造が提供される。薄いコーティングIFLは、各実施例のPVの1または2以上のIFLに使用されても良い。
前述のように、ある実施例によるPVおよび他の装置は、添加剤を有しても良い(例えば、1または2以上の酢酸、プロパン酸、トリフルオロ酢酸、ケノデオキシコール酸、デオキシコール酸、1,8-ジオードオクタン、および1,8-ジチオオクタン)。そのような添加剤は、色素浸漬の前に、または各比で色素との混合して浸漬溶液を形成する前に、直接、前処理剤として、使用されても良い。ある実施例では、これらの添加剤は、例えば、オープン活性サイトをブロックすることにより、および色素分子間を秩序化する分子を含むことにより、色素の溶解度を高めたり、色素分子のクラスター化を抑制したりする機能を有する。これらは、任意の適当な色素と使用され、これには、本発明の実施例による光活性化合物が含まれる。
ペロブスカイト材料は、PVまたは他の装置の1または2以上の態様で組み込まれる。ある実施例によるペロブスカイト材料は、一般式がCMX3である。ここで、Cは、1または2以上のカチオン(例えばアミン、アンモニウム、1族金属、2族金属、および/または他のカチオンもしくはカチオン状化合物)を含む。Mは、1または2以上の金属を含む(例えば、Fe、Co、Ni、Cu、Sn、Pb、Bi、Ge、Ti、およびZrを含む)。Xは、1または2以上のアニオンを含む。ある実施例では、Cは、1または2以上の有機カチオンを含んでも良い。
ある実施例では、本発明により、1または2以上のペロブスカイト材料を含む、PVと他の同様の装置(例えばバッテリ、ハイブリッドPVバッテリ、FET、LED等)との複合構造が提供される。例えば、1または2以上のペロブスカイト材料は、ある実施例の第1および第2の活性材料の少なくとも一方として機能しても良い(例えば、図5における活性材料2810および2815)。より一般的には、本発明のある実施例により、1または2以上のペロブスカイト材料を含む活性層を有するPVまたは他の装置が提供される。そのような実施例では、ペロブスカイト材料(すなわち、1または2以上のペロブスカイト材料を含む材料)は、各構成の活性層に使用される。また、ペロブスカイト材料は、活性層の1または2以上の部材の機能を提供しても良い(例えば電荷輸送材料、メゾポーラス材料、光活性材料、および/または界面材料、これらの各々については、以降に詳しく説明する)。ある実施例では、同じペロブスカイト材料が、そのような機能の複数を提供しても良い。一方、他の実施例では、複数のペロブスカイト材料が装置に含まれ、各ペロブスカイト材料が、そのような機能の1または2以上を提供しても良い。ある実施例では、ペロブスカイト材料は、いかなる役割を提供する場合も、各状態で装置に含まれ、および/または調製されても良い。例えば、これは、ある実施例では、実質的に固体であっても良い。他の実施例では、これは、溶液であっても良い(例えばペロブスカイト材料が液体中に溶解し、前記液体中に、個々のイオン性サブ種の状態で存在する)。あるいは、これは、サスペンションであっても良い(例えばペロブスカイト材料粒子)。溶液またはサスペンションは、コーティングされ、または装置(例えば、メゾポーラス層、界面、電荷輸送、光活性、または他の層、および/または電極のような、装置の別の部材)に成膜されても良い。ある実施例では、ペロブスカイト材料は、装置の別の部材の表面に、in-situで形成される(例えば、固体薄膜として、気相成膜法により)。ペロブスカイト材料を含む固体または液体層を形成するため、他の好適な手段が使用されても良い。
本開示の利点により、当業者には、他の例のペロブスカイト材料装置の構成が明らかである。一例には、これに限られるものではないが、以下の任意の構造を有する活性層を有する装置が含まれる:(1)液体電解質−ペロブスカイト材料−メゾポーラス層、(2)ペロブスカイト材料−色素−メゾポーラス層、(3)第1のペロブスカイト材料−第2のペロブスカイト材料−メゾポーラス層、(4)第1のペロブスカイト材料−第2のペロブスカイト材料、(5)第1のペロブスカイト材料−色素−第2のペロブスカイト材料、(6)固体電荷輸送材料−ペロブスカイト材料、(7)固体電荷輸送材料−色素−ペロブスカイト材料−メゾポーラス層、(8)固体電荷輸送材料−ペロブスカイト材料−色素−メゾポーラス層、(9)固体電荷輸送材料−色素−ペロブスカイト材料−メゾポーラス層、および(10)固体電荷輸送材料−ペロブスカイト材料−色素−メゾポーラス層。各例の構造における個々の部材(例えばメゾポーラス層、電荷輸送材料等)は、前述の各部材と一致しても良い。また、各例の構造については、以下詳細に説明する。
前述のように、ある実施例では、活性層内のペロブスカイト材料は、一般式CMX3-yX'y(0≧y≧3)を有する。ここで、Cは、1または2以上のカチオン(例えば、アミン、アンモニウム、I族金属、II族金属、および/または他のカチオンまたはカチオン状化合物)を有し、Mは、1または2以上の金属(例えば、Fe、Cd、Co、Ni、Cu、Hg、Sn、Pb、Bi, Ge、Ti、Zn、およびZr)であり、XおよびX’は、1または2以上のアニオンを有する。ある実施例では、ペロブスカイト材料は、CPbI3-yClyを有しても良い。ある実施例では、ペロブスカイト材料は、例えば、以下のステップを用いた、基板層上の滴下キャスト法、スピンキャスト法、スロットダイ印刷法、スクリーン印刷法、またはインクジェット法により、PV装置内の活性層として設置される。
前述のように、ある実施例では、ペロブスカイト材料活性層の前駆体膜は、溶媒または混合溶媒と、これに限られるものではないが、メチルアンモニウムヨウ化物、ホルムアミジニウムヨウ化物、グアニジニウムヨウ化物を含む塩と、を含む溶液に浸漬され、または洗浄される。メチルアンモニウムヨウ化物(MAI)の合成手順を、以下に示す。同様の手順は、グアニジニウムヨウ化物(GAI)、ホルムアミジニウムヨウ化物(FAI)、アミノ酸ヨウ化物、または任意のハロゲン化物(例えばヨウ化物、臭化物、塩化物、またはフッ化物)の塩にも適用できる
容器内で、メタノール中のメチルアミンのモル過剰量を、ヨウ化水素(HI)溶液に加える。ある実施例では、メチルアミンは、約9.8Mの濃度を有する。ただし、好適な濃度は、約0.001Mから約12Mの範囲である。ある実施例では、HI溶液は、約57%の濃度を有する。ただし、好適な濃度は、約1%から約100%の範囲である。任意の好適な容器が使用され、これには、これに限られるものではないが、丸底フラスコ、ビーカー、三角フラスコ、または他のガラス容器が含まれる。酸素フリーの不活性雰囲気において、撹拌しながら液滴状に添加することで、反応が実施される。ある実施例では、反応は、約0℃の温度で生じる。ただし、反応は、約-196℃以下、または約100℃以上で生じても良い。メチルアミン添加の完了後に、溶液が混合され、2時間にわたって室温まで加熱される。ある実施例では、溶液は、約1分以下の時間で、または約72時間以上の時間で、室温に暖められる。反応の完了後に、減圧処理を用いて溶媒が除去される。固体が残留するが、これは、赤または橙色であっても良い。この固体は、メチルアンモニウムヨウ化物の純化前の形態であり、特に、メチルアンモニウムヨウ化物、余剰開始材料、および/または反応副生成物を含む混合物である。
Claims (15)
- 鉛ハロゲン化物前駆体インクを調製するステップであって、
鉛ハロゲン化物を容器に導入するステップであって、前記鉛ハロゲン化物は、鉛(II)塩化物と鉛(II)ヨウ化物の混合物を含む、ステップと、
第1の溶媒を前記容器に導入するステップと、
前記鉛ハロゲン化物を前記第1の溶媒と接触させ、前記鉛ハロゲン化物を溶解し、前記鉛ハロゲン化物前駆体インクを形成する、ステップと、
を有するステップと、
前記鉛ハロゲン化物前駆体インクを基板上に設置するステップと、
前記鉛ハロゲン化物前駆体インクを乾燥させ、薄膜を形成するステップと、
前記薄膜を熱処理するステップと、
第2の溶媒および塩で、前記薄膜を洗浄するステップであって、前記塩は、メチルアンモニウムヨウ化物、ホルムアミジニウムヨウ化物、グアニジニウムヨウ化物、1,2,2-トリアミノビニルアンモニウムヨウ化物、および5-アミノ吉草酸ハイドロイオダイドからなる
からなる群から選定される、ステップと、
を有する方法。 - 前記鉛(II)塩化物と鉛(II)ヨウ化物の混合物は、鉛(II)ヨウ化物90molに対して、鉛(II)塩化物10molの割合で混合される、請求項1に記載の方法。
- 前記第1の溶媒は、乾燥ジメチルホルムアミド、ジメチルスルホキシド(DMSO)、メタノール、エタノール、プロパノール、ブタノール、テトラヒドロフラン、ホルムアミド、ピリジン、ピロリジン、クロロベンゼン、ジクロロベンゼン、ジクロロメタン、クロロホルム、およびこれらの組み合わせからなる群から選定される、請求項1に記載の方法。
- 前記鉛ハロゲン化物を前記溶媒と接触させ、前記鉛ハロゲン化物を溶解するステップは、約20℃から約150℃の間で実施される、請求項1に記載の方法。
- 前記鉛ハロゲン化物を前記溶媒と接触させ、前記鉛ハロゲン化物を溶解するステップは、約85℃で実施される、請求項1に記載の方法。
- 前記鉛ハロゲン化物前駆体インクは、前記鉛ハロゲン化物の濃度が約0.001Mから10Mの間である、請求項1に記載の方法。
- 前記鉛ハロゲン化物前駆体インクを基板上に設置するステップは、滴下キャスト法、スピンキャスト法、スロットダイ印刷法、スクリーン印刷法、またはインクジェット印刷法により行われる、請求項1に記載の方法。
- 前記薄膜を熱処理するステップは、約20℃から約300℃の間の温度で、最大24時間行われる、請求項1に記載の方法。
- 前記薄膜を熱処理するステップは、約50℃の温度で約10分間実施される、請求項1に記載の方法。
- 前記第2の溶媒は、ジメチルホルムアミド、イソプロパノール、メタノール、エタノール、ブタノール、クロロホルム、クロロベンゼン、ジメチルスルホキシド、水、およびこれらの組み合わせからなる群から選定される、請求項1に記載の方法。
- 前記塩は、ホルムアミジニウムヨウ化物を含む、請求項1に記載の方法。
- 前記塩は、約0.001Mから約10Mの間の濃度で、前記第2の溶媒に溶解される、請求項10に記載の方法。
- 前記塩は、メチルアンモニウムヨウ化物を有する、請求項1に記載の方法。
- 前記薄膜を洗浄するステップは、前記第2の溶媒に、少なくとも一部を浸漬するステップを有する、請求項1に記載の方法。
- 前記薄膜を熱処理するステップは、約40℃から約60℃の間の温度で、約5分から約30分間実施される、請求項1に記載の方法。
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