TWI553892B - 具鈣鈦礦施體層之太陽能電池模組 - Google Patents
具鈣鈦礦施體層之太陽能電池模組 Download PDFInfo
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- TWI553892B TWI553892B TW104144663A TW104144663A TWI553892B TW I553892 B TWI553892 B TW I553892B TW 104144663 A TW104144663 A TW 104144663A TW 104144663 A TW104144663 A TW 104144663A TW I553892 B TWI553892 B TW I553892B
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- 239000000758 substrate Substances 0.000 claims description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 6
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 6
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- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 6
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- 239000011787 zinc oxide Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011575 calcium Substances 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
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- 239000010931 gold Substances 0.000 claims description 4
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- 239000004332 silver Substances 0.000 claims description 4
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- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Polymers C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 claims description 3
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- 101000606537 Homo sapiens Receptor-type tyrosine-protein phosphatase delta Proteins 0.000 claims description 3
- 102100039666 Receptor-type tyrosine-protein phosphatase delta Human genes 0.000 claims description 3
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
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- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
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- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
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- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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Description
本發明係有關於一種具鈣鈦礦施體層之太陽能電池模組,尤其係指具有複數個具鈣鈦礦太陽能電池單元所組成的太陽能電池模組,主要係藉由複數個導接件一次串聯並電性連接複數個太陽能電池單元所形成,藉此,本發明具有更佳的開路電壓及穩定性。
按,人類大量使用非再生能源對自然環境造成的損害日益嚴重,逐漸影響生物圈內各樣生物的生活,因此近年來人們環保意識高漲,各國皆推動並發展再生能源之利用,其中太陽能具有低汙染及取之不盡的能量來源等優點,成為再生能源科技的發展重點之一。
在新一代太陽能電池系列中,以使用鈣鈦礦結構作為吸光層材料的鈣鈦礦太陽能電池最具發展性,主要原因為鈣鈦礦結構本身兼具寬廣的吸收頻譜與良好的吸收能力,有利於產生大的短路電流,並且更有優良的光電轉換效率。
例如中華民國發明專利公告號TW I485154 B「具鈣鈦礦結構吸光材料之有機混成太陽能電池及其製造方法」、TW I474992 B「鈣鈦礦薄膜及太陽能電池的製備方法」及美國專利US 20150200377 A1、US 20150228415 A1等皆致力於鈣鈦礦太陽能電池之發明;然而,此等專利實施例中之最大開路電壓僅能達到1.05伏特,並不足以驅動電子元件,如順向電壓約為3伏特的發光二極體(LED)意即就現有技術而言,須串聯至少3顆鈣鈦礦太陽能電池才能驅動發光二極體。再者,現有太陽能電池之串聯技術通常必須透過其他技術與機台協助方能完成,目前通常藉由人工串聯,如果需串聯5個太陽能電池,即要做4次串聯動作,此方法不僅會增加阻抗,更容易使成品產生誤差,且太陽能電池的鈣鈦礦結構接觸水氣後,容易分解而滲出到電池外部;因此,具有低穩定性、低安全性及光電轉換效率下降等缺失。
今,發明人即是鑑於上述現有之鈣鈦礦太陽能電池模組於實際實施使用時仍具有多處缺失,於是乃一本孜孜不倦之精神,並藉由其豐富專業知識及多年之實務經驗所輔佐,而加以改善,並據此研創出本發明。
本發明主要目的為提供一種具鈣鈦礦施體層之太陽能電池模組,其藉由絕緣層保護太陽能電池單元,並以複數個導接件一次串聯複數個太陽能電池單元形成鈣鈦礦太陽能電池模組,藉此,本發明不僅減少人工串聯而產生的高阻抗,更具有較佳的開路電壓及穩定性。
為了達到上述實施目的,本發明一種具鈣鈦礦施體層之太陽能電池模組,其包括有一透光基板,係具有一光入射面,以及相對於光入射面之一表面;複數個太陽能電池單元配置於表面上,其中每一複數個太陽能電池單元係具有一透明導電層、一第一載子傳輸層、一鈣鈦礦施體層、以及一第二載子傳輸層;一絕緣層,係配置於複數個太陽能電池單元之間,且部分披覆複數個太陽能電池單元;以及複數個導接件,係將複數個太陽能電池單元串聯並且電性連接。
於本發明之一實施例中,透光基板可選自硬式基板或可撓式基板。
於本發明之一實施例中,硬式基板或可饒式基板係為玻璃基板、藍寶石基板(Sapphire)、聚對苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)其中之一。
於本發明之一實施例中,透明導電層可選自ITO(氧化銦錫)、IZO(氧化銦鋅)、AZO(摻鋁之氧化鋅)或FTO(摻氟之二氧化錫)其中之一;第一載子傳輸層選自PEDOT(poly(3,4-ethylenedioxythiophene)):PSS(poly(styrene sulfonate))、PTPD (poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)-benzidine])、氧化鎳、碳酸銫、氧化鋯或二氧化鈦其中之一。
於本發明之一實施例中,鈣鈦礦施體層可選自CH
3NH
3PbI
3、CH
3NH
3PbBr
3、CH
3NH
3PbCl
3、CH
3NH
3PbI
2Br、CH
3NH
3PbI
2Cl、CH
3NH
3PbIBr
2、CH
3NH
3PbICl
2 、CH
3NH
3SnI
3或HC(NH
2)
2PbI
3。
於本發明之一實施例中,第二載子傳輸層選自C
60(富勒烯)、PC
61BM([6,6]-phenyl-C61-butyric acid methyl ester)、ICBA(indene-C60 bisadduct)、PC
71BM([6,6]-phenyl C71 butyric acid methyl ester )、Spiro-MeOTAD(2,2’,7,7’-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9’-spirobifluorene)、氟化鋰、氧化鋅、三氧化鎢、三氧化鉬或五氧化二釩其中之一。
於本發明之一實施例中,絕緣層係選自由二氧化矽、氧化鋁、氮化矽以及氮化鋁所構成之群組。
於本發明之一實施例中,其中複數個導接件係選自由鋁、銀、金以及鈣所構成之群組。
於本發明之一實施例中,絕緣層可佈設於複數個導接件之間及具鈣鈦礦施體層之太陽能電池模組之外側面。
藉此,本發明藉由複數個導接件一次串聯複數個太陽能電池單元,並由絕緣層避免鈣鈦礦施體層與大氣中的水氣接觸而分解,因此可避免光電轉換效率下降及造成低穩定性,且能有效改善目前鈣鈦礦太陽能電池所存在低開路電壓以及人工串聯而產生的高阻抗之缺失,故本發明能大幅提升鈣鈦礦太陽能電池的產業實用性。
本發明之目的及其結構功能上的優點,將依據以下圖面所示之結構,配合具體實施例予以說明,俾使審查委員能對本發明有更深入且具體之瞭解。
首先,請參閱圖式第一圖,其為本發明其一較佳實施例之剖面圖,具鈣鈦礦施體層之太陽能電池模組(1)其包括有:
一透光基板(11),係具有一光入射面(111),以及相對於光入射面(111)之一表面(112),而此透光基板(11)可選自硬式基板或可撓式基板,其中硬式基板或可饒式基板係為玻璃基板、藍寶石基板(Sapphire)、聚對苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)其中之一;
複數個太陽能電池單元(12)配置於透光基板(11)的表面(112)上,其中每一複數個太陽能電池單元(12)係具有一透明導電層(121),可例如選自ITO(氧化銦錫)、IZO(氧化銦鋅)、AZO(摻鋁之氧化鋅)或FTO(摻氟之二氧化錫)其中之一;一第一載子傳輸層(122),可例如選自PEDOT(poly(3,4-ethylenedioxythiophene)):PSS(poly(styrene sulfonate))、PTPD (poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)-benzidine])、氧化鎳、碳酸銫、氧化鋯或二氧化鈦其中之一;一鈣鈦礦施體層(123),可例如選自CH
3NH
3PbI
3、CH
3NH
3PbBr
3、CH
3NH
3PbCl
3、CH
3NH
3PbI
2Br、CH
3NH
3PbI
2Cl、CH
3NH
3PbIBr
2、CH
3NH
3PbICl
2 、CH
3NH
3SnI
3或HC(NH
2)
2PbI
3;以及一第二載子傳輸層(124) ,可例如選自C
60(富勒烯)、PC
61BM([6,6]-phenyl-C61-butyric acid methyl ester)、ICBA(indene-C60 bisadduct)、PC
71BM([6,6]-phenyl C71 butyric acid methyl ester )、Spiro-MeOTAD(2,2’,7,7’-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9’-spirobifluorene)、氟化鋰、氧化鋅、三氧化鎢、三氧化鉬或五氧化二釩其中之一;
一絕緣層(13),係配置於複數個太陽能電池單元(12)之間,且部分披覆複數個太陽能電池單元(12),此絕緣層(13)係選自於由二氧化矽、氧化鋁、氮化矽以及氮化鋁所構成之群組,並佈設於複數個導接件(14)之間及具鈣鈦礦施體層之太陽能電池模組(1)之外側面;
以及複數個導接件(14),係將複數個太陽能電池單元(12)串聯並且電性連接,此複數個導接件(14)係選自於由鋁、銀、金以及鈣所構成之群組。
此外,藉由下述具體實施例,可進一步證明本發明可實際應用之範圍,但不意欲以任何形式限制本發明之範圍。
請參閱圖式第一圖,為本發明其一較佳實施例之剖面圖,其步驟包含有:
步驟一:製作複數個太陽能電池單元(12),其中每一複數個太陽能電池單元(12)製作方法係藉由濺鍍形成一透明導電層(121)於一透光基板(11)上,並於透明導電層(121)上利用旋轉塗佈(Spin Coating)、濺鍍或蒸鍍方法形成第一載子傳輸層(122),於第一載子傳輸層(122)上使用噴霧技術(Spray Coating)、旋轉塗佈、濺鍍或蒸鍍方法形成一鈣鈦礦施體層(123)、並於鈣鈦礦施體層(123)上使用濺鍍或蒸鍍方法形成第二載子傳輸層(124);
步驟二:可選自於由二氧化矽、氧化鋁、氮化矽以及氮化鋁所構成之群組作為材料,並利用電漿輔助化學氣相沉積(PECVD)、濺鍍(Sputtering)、電子鎗真空蒸鍍(E-gun)或原子層化學氣相沉積(Atomic Layer Deposition)於第二載子傳輸層(124)上形成一絕緣層(13);
步驟三:可選自於由鋁、銀、金以及鈣所構成之群組作為材料,並利用濺鍍、電子鎗真空蒸鍍或熱蒸鍍(Thermal Evaporation)鍍膜於複數個太陽能電池單元(12)之絕緣層(13)上,一次形成複數個導接件(14)串聯複數個太陽能電池單元(12)。
於本發明一具體實施例中,依上述步驟一~步驟三之製備方法串連5個太陽能電池單元(12),成品可如第二圖所示, 5個太陽能電池單元(12)藉由複數個導接件(14)串聯並電性連接複數個太陽能電池單元(12),以形成一具鈣鈦礦施體層之太陽能電池模組(1),有效提升其開路電壓;相較於使用傳統人工串聯方法時,串聯5個太陽能電池單元需串聯4次,不僅過程繁雜,且亦會產生高阻抗,本發明之導接件只需做一次串聯動作即可串聯完成5個太陽能電池單元,大幅減少阻抗產生的可能性,更適合實際應用於產業。
由上述之實施說明可知,本發明與現有技術相較之下,本發明具有以下優點:
1.絕緣層能避免鈣鈦礦施體層與大氣中的水氣接觸而分解,解決現有技術使光電轉換效率下降及穩定性下降之問題,並提高安全性。
2.導接件串聯設計可增加太陽能電池模組的開路電壓,解決單一太陽能電池電壓不足以及人工串聯產生的高阻抗等問題。
綜上所述,本發明之具鈣鈦礦施體層之太陽能電池模組,的確能藉由上述所揭露之實施例,達到所預期之使用功效,且本發明亦未曾公開於申請前,誠已完全符合專利法之規定與要求。爰依法提出發明專利之申請,懇請惠予審查,並賜准專利,則實感德便。
惟,上述所揭之圖示及說明,僅為本發明之較佳實施例,非為限定本發明之保護範圍;大凡熟悉該項技藝之人士,其所依本發明之特徵範疇,所作之其它等效變化或修飾,皆應視為不脫離本發明之設計範疇。
(1)‧‧‧具鈣鈦礦施體層之太陽能電池模組
(11)‧‧‧透光基板
(111)‧‧‧光入射面
(112)‧‧‧表面
(12)‧‧‧太陽能電池單元
(121)‧‧‧透明導電層
(122)‧‧‧第一載子傳輸層
(123)‧‧‧鈣鈦礦施體層
(124)‧‧‧第二載子傳輸層
(13)‧‧‧絕緣層
(14)‧‧‧導接件
第一圖:本發明其一較佳實施例之剖面圖。
第二圖:本發明其一較佳實施例之成品示意圖。
(1)‧‧‧具鈣鈦礦施體層之太陽能電池模組
(11)‧‧‧透光基板
(111)‧‧‧光入射面
(112)‧‧‧表面
(12)‧‧‧太陽能電池單元
(121)‧‧‧透明導電層
(122)‧‧‧第一載子傳輸層
(123)‧‧‧鈣鈦礦施體層
(124)‧‧‧第二載子傳輸層
(13)‧‧‧絕緣層
(14)‧‧‧導接件
Claims (9)
- 一種具鈣鈦礦施體層之太陽能電池模組,包括: 一透光基板,係具有一光入射面,以及相對於該光入射面之一表面; 複數個太陽能電池單元配置於該表面上,其中每一該複數個太陽能電池單元係具有一透明導電層、一第一載子傳輸層、一鈣鈦礦施體層、以及一第二載子傳輸層; 一絕緣層,係配置於該複數個太陽能電池單元之間,且部分披覆該複數個太陽能電池單元;以及 複數個導接件,係將該複數個太陽能電池單元串聯並且電性連接。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該透光基板係選自硬式基板或可撓式基板。
- 如申請專利範圍第2項所述之具鈣鈦礦施體層之太陽能電池模組,其中該硬式基板或可饒式基板係為玻璃基板、藍寶石基板(Sapphire)、聚對苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)其中之一。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該透明導電層係選自ITO(氧化銦錫)、IZO(氧化銦鋅)、AZO(摻鋁之氧化鋅)或FTO(摻氟之二氧化錫)其中之一;該第一載子傳輸層選自PEDOT(poly(3,4-ethylenedioxythiophene)):PSS(poly(styrene sulfonate))、PTPD (poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)-benzidine])、氧化鎳、碳酸銫、氧化鋯或二氧化鈦其中之一。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該鈣鈦礦施體層係選自CH 3NH 3PbI 3、CH 3NH 3PbBr 3、CH 3NH 3PbCl 3、CH 3NH 3PbI 2Br、CH 3NH 3PbI 2Cl、CH 3NH 3PbIBr 2、CH 3NH 3PbICl 2 、CH 3NH 3SnI 3或HC(NH 2) 2PbI 3。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該第二載子傳輸層選自C 60(富勒烯)、PC 61BM([6,6]-phenyl-C61-butyric acid methyl ester)、ICBA(indene-C60 bisadduct)、PC 71BM([6,6]-phenyl C71 butyric acid methyl ester )、Spiro-MeOTAD(2,2’,7,7’-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9’-spirobifluorene)、氟化鋰、氧化鋅、三氧化鎢、三氧化鉬或五氧化二釩其中之一。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該絕緣層係選自於由二氧化矽、氧化鋁、氮化矽以及氮化鋁所構成之群組。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該複數個導接件係選自於由鋁、銀、金以及鈣所構成之群組。
- 如申請專利範圍第1項所述之具鈣鈦礦施體層之太陽能電池模組,其中該絕緣層係佈設於該複數個導接件之間及該具鈣鈦礦施體層之太陽能電池模組之外側面。
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TW200947790A (en) * | 2007-12-12 | 2009-11-16 | Sony Corp | Dye-sensitized photoelectric conversion element module, manufacturing method thereof, photoelectric conversion element module, and manufacturing method thereof, as well as electronic apparatus |
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TWI639245B (zh) | 2016-12-30 | 2018-10-21 | 台灣中油股份有限公司 | 鈣鈦礦太陽能電池模組 |
TWI644448B (zh) * | 2017-10-18 | 2018-12-11 | 台灣中油股份有限公司 | 鈣鈦礦太陽能電池模組及其製備方法 |
CN108666426A (zh) * | 2018-06-30 | 2018-10-16 | 中国科学院上海硅酸盐研究所 | 一种钙钛矿太阳能电池模块及其制备方法 |
TWI699019B (zh) * | 2019-12-23 | 2020-07-11 | 位速科技股份有限公司 | 具阻絕結構之鈣鈦礦光電元件、串接式鈣鈦礦光電元件以及串接式鈣鈦礦光電元件之製造方法 |
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US20170194102A1 (en) | 2017-07-06 |
TW201724542A (zh) | 2017-07-01 |
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