TWI644448B - 鈣鈦礦太陽能電池模組及其製備方法 - Google Patents
鈣鈦礦太陽能電池模組及其製備方法 Download PDFInfo
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- TWI644448B TWI644448B TW106135737A TW106135737A TWI644448B TW I644448 B TWI644448 B TW I644448B TW 106135737 A TW106135737 A TW 106135737A TW 106135737 A TW106135737 A TW 106135737A TW I644448 B TWI644448 B TW I644448B
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- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229940006460 bromide ion Drugs 0.000 claims description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 6
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 5
- 229940006461 iodide ion Drugs 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 229910001432 tin ion Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- -1 iodide ions Chemical class 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910001427 strontium ion Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 abstract description 6
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- 230000000903 blocking effect Effects 0.000 description 21
- 239000010408 film Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 4
- 229910001422 barium ion Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本發明提供一種鈣鈦礦太陽能電池模組,包含透光基板、複數個太陽能電池單元、複數個絕緣構件以及複數個連接構件。太陽能電池單元包含透明導電層、第一載子傳導層、鈣鈦礦層以及第二載子傳導層。本發明藉由改變鈣鈦礦層之受光面積比例,增加光子吸收量,並改變透明導電層與第一載子傳導層之相對位置,使第一載子傳導層完全覆蓋於透明導電層之側表面,增加載子的使用率,以提升模組效能,另外,藉由包含分散式布拉格反射結構的絕緣構件,可增加光子被鈣鈦礦層吸收之效率,而透過本發明之架構設計和製備方法,還能實現大面積生產的鈣鈦礦太陽能電池模組。
Description
本發明係關於鈣鈦礦太陽能電池模組及其製備方法,尤其關於一種增加光吸收面積之鈣鈦礦太陽能電池模組及其製備方法。
太陽能發電是解決日益嚴重的能源枯竭與全球暖化的有效手段之一。經過數十年發展,太陽能電池的種類從傳統的單晶矽發展到各類新型的太陽能電池,如薄膜太陽能電池、有機太陽能電池、染料敏化太陽能電池等,而在染料敏化太陽能電池基礎上發展起來的鈣鈦礦太陽能電池,在短短幾年內快速地提升了光電轉換效率,獲得極大的關注,各國研究單位紛紛投入大量的研發。
因此鈣鈦礦太陽能電池在光電轉換效率、結構和製備方法上有了迅速地發展和進步,2014年美國加州大學洛杉磯分校的楊陽教授團隊,以控制鈣鈦礦薄膜成長,並在低溫(<150℃)環境下,製作出光電轉換效率達19.3%的電池,但其有效面積為0.1cm2,開路電壓則為1.13V。目前普遍鈣鈦礦太陽能電池的有效面積皆比較小(0.2cm2以下),開路電壓也較低,大約1V左右,故很難使用單一電池驅動任何電子產品,此外,在進行電池串聯時,需採用人工橋接方式或雷射劃線技術,造成製程更加地複雜,成本大幅增加。
本案發明人先前申請的中華民國發明專利I553892「具鈣鈦礦施體層之太陽能電池模組」中,已提出在結構上藉由複數個導接件一次串聯並電性連接複數個太陽能電池,解決單一太陽能電池電壓不足以及人工串聯產生的高阻抗等問題,但其光電轉換效率仍有提升的空間,因此申請人提出一種以可增加光吸收面積,加強光利用效率,提升模組效能,並
能實現大面積生產的鈣鈦礦太陽能電池模組及其製備方法。
有鑒於習知技術之缺失,本發明提供一種鈣鈦礦太陽能電池模組及其製備方法。
本發明之鈣鈦礦太陽能電池模組,係包括:一透光基板,係包含一上表面和一下表面,該下表面係為一光入射面;複數個太陽能電池單元,其中每一太陽能電池單元包含:一透明導電層,係設置於該透光基板之該上表面;一第一載子傳導層,係設置於該透明導電層之上方,並部分覆蓋於該透明導電層之一上表面,且完全覆蓋於該透明導電層之一側表面,且該第一載子傳導層與該透光基板之該上表面相接觸;一鈣鈦礦層,係設置於該第一載子傳導層之上方;以及一第二載子傳導層,係設置於該鈣鈦礦層之上方;複數個絕緣構件,係配置於每一太陽能電池單元之該第二載子傳導層之上方,並延伸覆蓋每一太陽能電池單元之該第二載子傳導層、該鈣鈦礦層和該第一載子傳導層之側表面,且分別於該些太陽能電池單元之該透明導電層之上方構成複數個第一通道,並分別於該些太陽能電池單元之該第二載子傳導層之上方構成複數個第二通道;以及複數個連接構件,係配置於每一太陽能電池單元之該第二載子傳導層之上方,並通過於該些第一通道和該些第二通道,以將該些太陽能電池單元電性連接,且相鄰的連接構件之間相隔一間隙。
本發明之鈣鈦礦太陽能電池模組製備方法,係包含:提供一透光基板;形成複數個透明導電層於該透光基板上;形成一第一載子傳導層於該些透明導電層之上方,並完全覆蓋於該些透明導電層之側表面,且該第一載子傳導層與該透光基板之上表面相接觸;形成一鈣鈦礦層於該第一載子傳導層上;形成一第二載子傳導層於該鈣鈦礦層上;形成複數個第一通道,該些第一通道分別自該些透明導電層之上表面延伸至該第二載子傳導層,並將該些透明導電層、該第一載子傳導層、該鈣鈦礦層和該第二載子傳導層區隔為複數個太陽能電池單元;形成複數個絕緣構件於該第二載子傳導層上,該些絕緣構件於每一第一通道內覆蓋每一太陽能電池單元
之該第二載子傳導層、該鈣鈦礦層和該第一載子傳導層之側表面,並分別於該些太陽能電池單元之該第二載子傳導層之上方形成複數個第二通道;以及形成複數個連接構件於每一太陽能電池單元之該第二載子傳導層上,並通過於該些第一通道和該些第二通道,以將該些太陽能電池單元電性連接,且相鄰的連接構件之間相隔一間隙。
本發明所提供之鈣鈦礦太陽能電池模組及其製備方法,藉由改變鈣鈦礦層之受光面積比例,藉此增加光子吸收量,並藉由改變透明導電層與第一載子傳導層之相對位置,使第一載子傳導層完全覆蓋於透明導電層之側表面,能增加載子的使用率,結合兩者能達到提升模組效能的功效,另外,藉由包含分散式布拉格反射結構的絕緣構件,可增加光子被鈣鈦礦層吸收之效率,此外,透過本發明提供之架構設計和製備方法,還能實現大面積生產的鈣鈦礦太陽能電池模組,更符合商用上的需求。
為了使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。
1‧‧‧鈣鈦礦太陽能電池模組
10‧‧‧透光基板
11‧‧‧透光基板之上表面
12‧‧‧透光基板之下表面
13‧‧‧透光基板之虛擬中心面
20‧‧‧太陽能電池單元
21‧‧‧透明導電層
210‧‧‧透明導電膜
211‧‧‧透明導電層之上表面
212‧‧‧透明導電層之側表面
22‧‧‧第一載子傳導層
23‧‧‧鈣鈦礦層
24‧‧‧第二載子傳導層
25‧‧‧載子阻擋層
30‧‧‧絕緣構件
31‧‧‧第一折射層
32‧‧‧第二折射層
40‧‧‧連接構件
41‧‧‧間隙
50‧‧‧第一通道
60‧‧‧第二通道
第1圖為本發明之鈣鈦礦太陽能電池模組一實施例之剖面圖。
第2圖為包含分散式布拉格反射結構之絕緣構件之局部剖面圖。
第3圖為本發明之鈣鈦礦太陽能電池模組另一實施例之剖面圖。
第4(A)圖為本發明之鈣鈦礦太陽能電池模組一實施例之俯視圖,第4(B)圖為該實施例之剖面圖。
第5-12圖為本發明之鈣鈦礦太陽能電池模組製備方法之步驟示意圖。
第13圖為本發明之鈣鈦礦太陽能電池模組之實驗數據。
為讓鈞院貴審查委員及習於此技術人士,對本發明之功效完
全了解,茲配合圖式及圖號,就本發明較佳之實施例說明如下。
請參考第1圖,第1圖為本發明之鈣鈦礦太陽能電池模組一實施例之剖面圖,如圖所示,本發明提供一種鈣鈦礦太陽能電池模組1,其包含:一透光基板10、複數個太陽能電池單元20、複數個絕緣構件30以及複數個連接構件40。
透光基板10包含一上表面11和一下表面12,下表面12係為光入射面。複數個太陽能電池單元20中,每一太陽能電池單元20包含:一透明導電層21、一第一載子傳導層22、一鈣鈦礦層23以及一第二載子傳導層24。透明導電層21係設置於透光基板10之上表面11,第一載子傳導層22係設置於透明導電層21之上方,並部分覆蓋於透明導電層21之一上表面211,且完全覆蓋於透明導電層21之一側表面212,且第一載子傳導層22與透光基板10之上表面11相接觸,鈣鈦礦層23係設置於第一載子傳導層22之上方,第二載子傳導層24係設置於鈣鈦礦層23之上方。在第1圖中,係以六個太陽能電池單元20為例,但本發明並不以此為限。
複數個絕緣構件30係配置於每一太陽能電池單元20之第二載子傳導層24之上方,並延伸覆蓋每一太陽能電池單元20之第二載子傳導層24、鈣鈦礦層23和第一載子傳導層22之側表面,且分別於該些太陽能電池單元20之透明導電層21之上方構成複數個第一通道50,並分別於該些太陽能電池單元20之第二載子傳導層24之上方構成複數個第二通道60。
複數個連接構件40係配置於每一太陽能電池單元20之第二載子傳導層24之上方,並通過於該些第一通道50和該些第二通道60,以將該些太陽能電池單元20電性連接,且相鄰的連接構件40之間相隔一間隙41。
於一實施例中,透明導電層21的材料包含氧化銦錫(ITO)或摻氟之二氧化錫(FTO)。
該些太陽能電池單元20可為正規結構(Regular structure)或反置結構(Inverted structure),因此第一載子傳導層22可為一電洞傳導層或一電子傳導層,當第一載子傳導層22為電洞傳導層時,第二載子傳導層24
係為一電子傳導層,當第一載子傳導層22為電子傳導層時,第二載子傳導層24係為一電洞傳導層。於一實施例中,電洞傳導層的材料包含PEDOT:PSS、Spiro-MeOTAD、CuSCN、P3HT、氧化鎳或氧化亞銅,而電子傳導層的材料包含C60(富勒烯)、PC61BM、ICBA、PC71BM、氧化鋅、二氧化鈦、二氧化錫或三氧化鎢。
於一實施例中,鈣鈦礦層23係由通式ABC3-xDx表示,A係為H3CNH3離子、H2NCH=NH2離子、銫離子之中至少一種,B係為鉛離子、錫離子、鍺離子之中至少一種,C係為氯離子、溴離子、碘離子之中至少一種,D係為氯離子、溴離子、碘離子之中至少一種,而x為0至3之實數。
於一實施例中,透光基板10的材料包含玻璃或藍寶石。
於一實施例中,該些連接構件40的材料包含鋁、銀、金或前述材料之組合。
於一實施例中,該些絕緣構件30的材料包含二氧化矽(SiO2)或氮化矽(Si3N4)。
於一實施例中,該些絕緣構件30係包含一分散式布拉格反射結構。請參考第2圖,第2圖為包含分散式布拉格反射結構之絕緣構件之局部剖面圖,分散式布拉格反射結構係包含複數個第一折射層31和複數個第二折射層32,該些第一折射層31與該些第二折射層32交替堆疊,且該些第一折射層31之折射率相異於該些第二折射層32之折射率。例如第一折射層31可為二氧化矽(SiO2),折射率約為1.5,第二折射層32可為二氧化鈦(TiO2),折射率約為2.5。
請參考第3圖,第3圖為本發明之鈣鈦礦太陽能電池模組另一實施例之剖面圖,在此實施例中,鈣鈦礦太陽能電池模組1中,每一太陽能電池單元20還包含一載子阻擋層25,載子阻擋層25係設置於第二載子傳導層24之上方,該些絕緣構件30係配置於每一太陽能電池單元20之載子阻擋層25之上方,並延伸覆蓋每一太陽能電池單元20之載子阻擋層25、第二載子傳導層24、鈣鈦礦層23和第一載子傳導層22之側表面,且分別於該些太陽能電池單元20之透明導電層21之上方構成複數個第一通
道50,並分別於該些太陽能電池單元20之載子阻擋層25之上方構成複數個第二通道60。載子阻擋層25可為電洞阻擋層或電子阻擋層,例如當第二載子傳導層24為一電子傳導層時,載子阻擋層25即為電洞阻擋層,用以阻擋電洞通過,但允許電子通過到達連接構件40,電洞阻擋層可為BCP(bathocuproine),但不以此為限。此實施例中其他的特徵都與前一實施例雷同,在此不加以贅述。
請參考第4圖,第4(A)圖為本發明之鈣鈦礦太陽能電池模組一實施例之俯視圖,於此實施例中,該些太陽能電池單元20係基於透光基板10之一虛擬中心面13而配置成對稱,而第4(B)圖為其相對應之剖面圖。
請參考第5-12圖,第5-12圖為本發明之鈣鈦礦太陽能電池模組製備方法之步驟示意圖,如圖所示,本發明提供一種鈣鈦礦太陽能電池模組製備方法,其包含:
步驟一:提供一透光基板10,請參考第5圖。於本發明中,需要在透光基板10形成複數個太陽能電池單元20,再將該些太陽能電池單元20連接,以構成鈣鈦礦太陽能電池模組1。
步驟二:形成複數個透明導電層21於透光基板10上,請參考第6-7圖,步驟二包含:沉積一透明導電膜210於透光基板10上(第6圖);以及圖案化蝕刻透明導電膜210以形成複數個透明導電層21(第7圖)。於步驟二中,透明導電膜210可使用濺鍍(Sputtering)或電子束蒸鍍(E-beam evaporation)方式來沉積,透明導電膜210的材料包含氧化銦錫(ITO)或摻氟之二氧化錫(FTO)。該些透明導電層21可使用溼式蝕刻方式(Wet etching),進行圖案化(Patterning),以ITO透光基板為例,選用蝕刻的溶液為濃度37%鹽酸溶液。
步驟三:形成一第一載子傳導層22於該些透明導電層21之上方,並完全覆蓋於該些透明導電層21之側表面,且第一載子傳導層22與透光基板10之上表面11相接觸,請參考第8圖。於步驟三中,第一載子傳導層22可為一電洞傳導層或一電子傳導層,以電洞傳導層為例,電洞傳導層的材料包含PEDOT:PSS、Spiro-MeOTAD、CuSCN、P3HT、氧化鎳
或氧化亞銅,會在已形成複數個透明導電層21的透光基板10上,先使用紫外光臭氧(UV/ozone)進行表面處理30分鐘,接著,以PEDOT:PSS為例,利用旋轉塗佈方式(Spin coating)將PEDOT:PSS沉積佈滿,使用轉速為4000rpm,時間60秒,沉積完後,再進行加熱處理(150℃,15分鐘)。
步驟四:形成一鈣鈦礦層23於第一載子傳導層22上,請參考第9圖。鈣鈦礦層23係由通式ABC3-xDx表示,A係為H3CNH3離子、H2NCH=NH2離子、銫離子之中至少一種,B係為鉛離子、錫離子、鍺離子之中至少一種,C係為氯離子、溴離子、碘離子之中至少一種,D係為氯離子、溴離子、碘離子之中至少一種,而x為0至3之實數。以鈣鈦礦CH3NH3PbI3為例,步驟四包含:沉積一碘化鉛(PbI2)膜(圖未示)於該第一載子傳導層上;以及提供一甲基碘化胺(CH3NH3I)蒸氣(圖未示)與碘化鉛膜(圖未示)反應以形成該鈣鈦礦層。碘化鉛膜可使用熱蒸鍍(Thermal evaporation)方式形成,其厚度為60nm。甲基碘化胺蒸氣則可使用化學氣相沉積(Chemical vapor deposition)方式形成,並進一步與述之碘化鉛膜產生反應,並將基板載具的反應溫度控制在80℃,便可獲得鈣鈦礦層23。
步驟五:形成一第二載子傳導層24於鈣鈦礦層23上,請參考第10圖。第二載子傳導層24可為一電洞傳導層或一電子傳導層,在前述步驟三說明中,第一載子傳導層22為電洞傳導層,因此第二載子傳導層24以電子傳導層為例,電子傳導層的材料包含C60(富勒烯)、PC61BM、ICBA、PC71BM、氧化鋅、二氧化鈦、二氧化錫或三氧化鎢,以C60為例,其可使用熱蒸鍍(Thermal evaporation)方式將C60沉積於鈣鈦礦層23上,其厚度為60nm。
步驟六:形成複數個第一通道50,該些第一通道50分別自該些透明導電層21之上表面延伸至該第二載子傳導層24,並將該些透明導電層21、該第一載子傳導層22、該鈣鈦礦層23和該第二載子傳導層24區隔為複數個太陽能電池單元20,請參考第11圖。複數個第一通道50可使用乾式蝕刻方式(Dry etching)來形成,其可透過感應耦合電漿(Inductively coupled plasma)設備。
步驟七:形成複數個絕緣構件30於第二載子傳導層24上,
該些絕緣構件30於每一第一通道50內覆蓋每一太陽能電池單元之第二載子傳導層24、鈣鈦礦層23和第一載子傳導層22之側表面,並分別於該些太陽能電池單元20之第二載子傳導層24之上方形成複數個第二通道60,請參考第12圖。於步驟七中,可搭配金屬遮罩,使用電子束蒸鍍(E-beam evaporation)方式沉積該些絕緣構件30,並根據金屬遮罩圖案形成該些第二通道60。該些絕緣構件30的材料包含二氧化矽(SiO2)或氮化矽(Si3N4),以二氧化矽為例,厚度為100nm。
步驟八:形成複數個連接構件40於每一太陽能電池單元20之第二載子傳導層24上,並通過於該些第一通道50和該些第二通道60,以將該些太陽能電池單元20電性連接,且相鄰的連接構件40之間相隔一間隙41,最後形成本發明之鈣鈦礦太陽能電池模組1,請參考第1圖。於步驟八中,可搭配金屬遮罩,使用熱蒸鍍(Thermal evaporation)方式,沉積一層鋁金屬,以形成該些連接構件40,並根據金屬遮罩圖案形成間隙41。
在一實施例中,步驟七可包含:沉積複數個第一折射層(圖未示);以及沉積複數個第二折射層(圖未示),該些第一折射層與該些第二折射層交替堆疊,且該些第一折射層之折射率相異於該些第二折射層之折射率,該些第一折射層與該些第二折射層以形成該些絕緣構件30。
在一實施例中,請參考第3圖,在步驟五(形成第二載子傳導層於鈣鈦礦層上)後,可再形成一載子阻擋層25於第二載子傳導層24之上方。而該些絕緣構件30係形成於每一太陽能電池單元20之載子阻擋層25之上方,並延伸覆蓋每一太陽能電池單元20之載子阻擋層25、第二載子傳導層24、鈣鈦礦層23和第一載子傳導層22之側表面,且分別於該些太陽能電池單元20之透明導電層21之上方形成複數個第一通道50,並分別於該些太陽能電池單元20之載子阻擋層25之上方形成複數個第二通道60。載子阻擋層25可為電洞阻擋層或電子阻擋層,例如當第二載子傳導層24為一電子傳導層時,載子阻擋層25即為電洞阻擋層,用以阻擋電洞通過,但允許電子通過到達連接構件40,電洞阻擋層可為BCP(bathocuproine),但不以此為限。
請參考第13圖,第13圖為本發明之鈣鈦礦太陽能電池模組
在光強度100mW/cm2照射下之實驗數據,開路電壓(VOC)為3.85V,短路電流(ISC)為5.34mA,最大輸出功率(Pmax)為8.34mW。
本發明所提供之鈣鈦礦太陽能電池模組及其製備方法,藉由改變鈣鈦礦層之受光面積比例,藉此增加光子吸收量,並藉由改變透明導電層與第一載子傳導層之相對位置,使第一載子傳導層完全覆蓋於透明導電層之側表面,能增加載子的使用率,結合兩者能達到提升模組效能的功效,另外,藉由包含分散式布拉格反射結構的絕緣構件,可增加光子被鈣鈦礦層吸收之效率,此外,透過本發明提供之架構設計和製備方法,還能實現大面積生產的鈣鈦礦太陽能電池模組,更符合商用上的需求。
惟上述各實施例係用以說明本發明之特點,其目的在使熟習該技術者能瞭解本發明之內容並據以實施,而非限定本發明之專利範圍,故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改,仍應包含在以下所述之申請專利範圍中。
Claims (13)
- 一種鈣鈦礦太陽能電池模組,其包含:一透光基板,係包含一上表面和一下表面,該下表面係為一光入射面;複數個太陽能電池單元,其中每一太陽能電池單元包含:一透明導電層,係設置於該透光基板之該上表面;一第一載子傳導層,係設置於該透明導電層之上方,並部分覆蓋於該透明導電層之一上表面,且完全覆蓋於該透明導電層之一側表面,且該第一載子傳導層與該透光基板之該上表面相接觸;一鈣鈦礦層,係設置於該第一載子傳導層之上方;以及一第二載子傳導層,係設置於該鈣鈦礦層之上方;複數個絕緣構件,係配置於每一太陽能電池單元之該第二載子傳導層之上方,並延伸覆蓋每一太陽能電池單元之該第二載子傳導層、該鈣鈦礦層和該第一載子傳導層之側表面,且分別於該些太陽能電池單元之該透明導電層之上方構成複數個第一通道,並分別於該些太陽能電池單元之該第二載子傳導層之上方構成複數個第二通道;以及複數個連接構件,係配置於每一太陽能電池單元之該第二載子傳導層之上方,並通過於該些第一通道和該些第二通道,以將該些太陽能電池單元電性連接,且相鄰的連接構件之間相隔一間隙。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該些絕緣構件係包含一分散式布拉格反射結構。
- 如申請專利範圍第2項所述之鈣鈦礦太陽能電池模組,其中該分散式布拉格反射結構係包含複數個第一折射層和複數個第二折射層,該些第一折 射層與該些第二折射層交替堆疊,且該些第一折射層之折射率相異於該些第二折射層之折射率。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該些絕緣構件的材料包含二氧化矽(SiO2)或氮化矽(Si3N4)。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該透光基板的材料包含玻璃或藍寶石。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該些連接構件的材料包含鋁、銀、金或前述材料之組合。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該透明導電層的材料包含氧化銦錫(ITO)或摻氟之二氧化錫(FTO)。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該第一載子傳導層係為一電洞傳導層或一電子傳導層,該第二載子傳導層係為一電子傳導層或一電洞傳導層,該電洞傳導層的材料包含PEDOT:PSS、Spiro-MeOTAD、CuSCN、P3HT、氧化鎳或氧化亞銅,該電子傳導層的材料包含C60(富勒烯)、PC61BM、ICBA、PC71BM、氧化鋅、二氧化鈦、二氧化錫或三氧化鎢。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該鈣鈦礦層係由通式ABC3-xDx表示,其中A係為H3CNH3離子、H2NCH=NH2離子、銫離子之中至少一種,B係為鉛離子、錫離子、鍺離子之中至少一種,C係為氯離子、溴離子、碘離子之中至少一種,D係為氯離子、溴離子、碘離子之中至少一種,而x為0至3之實數。
- 如申請專利範圍第1項所述之鈣鈦礦太陽能電池模組,其中該些太陽能 電池單元係基於該透光基板之一虛擬中心面而配置成對稱。
- 一種鈣鈦礦太陽能電池模組製備方法,其包含:提供一透光基板;形成複數個透明導電層於該透光基板上;形成一第一載子傳導層於該些透明導電層之上方,並完全覆蓋於該些透明導電層之側表面,且該第一載子傳導層與該透光基板之上表面相接觸;形成一鈣鈦礦層於該第一載子傳導層上;形成一第二載子傳導層於該鈣鈦礦層上;形成複數個第一通道,該些第一通道分別自該些透明導電層之上表面延伸至該第二載子傳導層,並將該些透明導電層、該第一載子傳導層、該鈣鈦礦層和該第二載子傳導層區隔為複數個太陽能電池單元;形成複數個絕緣構件於該第二載子傳導層上,該些絕緣構件於每一第一通道內覆蓋每一太陽能電池單元之該第二載子傳導層、該鈣鈦礦層和該第一載子傳導層之側表面,並分別於該些太陽能電池單元之該第二載子傳導層之上方形成複數個第二通道;以及形成複數個連接構件於每一太陽能電池單元之該第二載子傳導層上,並通過於該些第一通道和該些第二通道,以將該些太陽能電池單元電性連接,且相鄰的連接構件之間相隔一間隙。
- 如申請專利範圍第11項所述之鈣鈦礦太陽能電池模組製備方法,更包含:沉積一透明導電膜於該透光基板上;以及 圖案化蝕刻該透明導電膜以形成該些透明導電層。
- 如申請專利範圍第11項所述之鈣鈦礦太陽能電池模組製備方法,更包含:沉積複數個第一折射層;以及沉積複數個第二折射層,該些第一折射層與該些第二折射層交替堆疊,且該些第一折射層之折射率相異於該些第二折射層之折射率,該些第一折射層與該些第二折射層以形成該些絕緣構件。
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