SG11201501107XA - Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compound - Google Patents
Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compoundInfo
- Publication number
- SG11201501107XA SG11201501107XA SG11201501107XA SG11201501107XA SG11201501107XA SG 11201501107X A SG11201501107X A SG 11201501107XA SG 11201501107X A SG11201501107X A SG 11201501107XA SG 11201501107X A SG11201501107X A SG 11201501107XA SG 11201501107X A SG11201501107X A SG 11201501107XA
- Authority
- SG
- Singapore
- Prior art keywords
- thin film
- molybdenum
- starting material
- imide compound
- forming starting
- Prior art date
Links
- 229910052750 molybdenum Inorganic materials 0.000 title 2
- 239000011733 molybdenum Substances 0.000 title 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- -1 molybdenum imide compound Chemical class 0.000 title 1
- 239000007858 starting material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012253276 | 2012-11-19 | ||
| PCT/JP2013/077889 WO2014077073A1 (en) | 2012-11-19 | 2013-10-15 | Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201501107XA true SG11201501107XA (en) | 2015-07-30 |
Family
ID=50730994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201501107XA SG11201501107XA (en) | 2012-11-19 | 2013-10-15 | Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compound |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9695207B2 (en) |
| JP (1) | JP6198280B2 (en) |
| KR (1) | KR102149490B1 (en) |
| CN (1) | CN104603327B (en) |
| SG (1) | SG11201501107XA (en) |
| TW (1) | TWI609983B (en) |
| WO (1) | WO2014077073A1 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014077073A1 (en) * | 2012-11-19 | 2014-05-22 | 株式会社Adeka | Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compound |
| JPWO2019039103A1 (en) * | 2017-08-21 | 2020-07-30 | 株式会社Adeka | Tungsten compound, raw material for forming thin film, and method for producing thin film |
| US11560625B2 (en) * | 2018-01-19 | 2023-01-24 | Entegris, Inc. | Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor |
| US11459347B2 (en) | 2021-01-12 | 2022-10-04 | Applied Materials, Inc. | Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films |
| US11434254B2 (en) | 2021-01-12 | 2022-09-06 | Applied Materials, Inc. | Dinuclear molybdenum precursors for deposition of molybdenum-containing films |
| US11390638B1 (en) | 2021-01-12 | 2022-07-19 | Applied Materials, Inc. | Molybdenum(VI) precursors for deposition of molybdenum films |
| US11760768B2 (en) | 2021-04-21 | 2023-09-19 | Applied Materials, Inc. | Molybdenum(0) precursors for deposition of molybdenum films |
| KR102650935B1 (en) | 2021-11-24 | 2024-03-26 | 한국화학연구원 | Novel Organo-Mollibdenum or Organo-Tungsten Compounds, Preparation method thereof, and Method for deposition of thin film using the same |
| KR20230111911A (en) | 2022-01-19 | 2023-07-26 | 한국화학연구원 | Novel Organo-Molybdenum Compounds, Preparation method thereof, and Method for deposition of thin film using the same |
| KR102573398B1 (en) | 2022-09-06 | 2023-08-30 | 한국화학연구원 | Composition for Solution Process for producing Hetero Metal Chalcogenide Thin film and Method for producing thin film using the same |
| KR102570721B1 (en) | 2022-03-30 | 2023-08-25 | 한국화학연구원 | Novel Multi Component Organometallic Compounds, Preparation method thereof, and Method for deposition of thin film using the same |
| KR20240033510A (en) | 2022-09-05 | 2024-03-12 | 한국화학연구원 | Novel Organo-Molybdenum Compounds, Preparation method thereof, and Method for deposition of thin film using the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60125372A (en) | 1983-12-09 | 1985-07-04 | Fujitsu Ltd | Production of metallic film |
| US7323581B1 (en) * | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
| EP1161572B1 (en) * | 1999-03-03 | 2003-06-18 | Widia GmbH | Cutting insert for cutting metallic materials with a molybdenum sulfide containing coating and method for its production |
| US6238734B1 (en) * | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
| US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| JP3822135B2 (en) | 2002-05-13 | 2006-09-13 | 日本パイオニクス株式会社 | Vaporization supply device |
| JP2003342732A (en) * | 2002-05-20 | 2003-12-03 | Mitsubishi Materials Corp | Solution raw material for organometallic chemical vapor deposition method containing tantalum complex and tantalum-containing thin film produced by using the same |
| US6798068B2 (en) | 2002-11-26 | 2004-09-28 | Advanced Micro Devices, Inc. | MOCVD formation of Cu2S |
| JP4592373B2 (en) | 2004-09-30 | 2010-12-01 | 株式会社トリケミカル研究所 | Method for forming conductive molybdenum nitride gate electrode film |
| JP4326005B2 (en) | 2004-11-08 | 2009-09-02 | 株式会社高純度化学研究所 | Tertiary amylimide tris (dimethylamide) niobium, a method for producing the same, a raw material solution for ALD using the same, and a method for forming a niobium nitride film or a niobium oxide film using the same. |
| US7547464B2 (en) * | 2005-01-19 | 2009-06-16 | Praxair Technology, Inc. | Organometallic precursor compounds |
| US7956207B2 (en) | 2006-09-28 | 2011-06-07 | Praxair Technology, Inc. | Heteroleptic organometallic compounds |
| US8795771B2 (en) * | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| US20120077719A1 (en) * | 2010-09-24 | 2012-03-29 | Chevron Oronite Company Llc | Preparation of a molybdenum imide additive composition and lubricating oil compositions containing same |
| US20130011579A1 (en) | 2010-11-30 | 2013-01-10 | Air Products And Chemicals, Inc. | Metal-Enolate Precursors For Depositing Metal-Containing Films |
| JP5730670B2 (en) | 2011-05-27 | 2015-06-10 | 株式会社Adeka | Method for producing thin film containing molybdenum oxide, and raw material for forming thin film containing molybdenum oxide |
| US8980434B2 (en) * | 2011-12-16 | 2015-03-17 | Wisconsin Alumni Research Foundation | Mo—Si—B—based coatings for ceramic base substrates |
| WO2014077073A1 (en) * | 2012-11-19 | 2014-05-22 | 株式会社Adeka | Method for producing thin film containing molybdenum, thin film-forming starting material, and molybdenum imide compound |
-
2013
- 2013-10-15 WO PCT/JP2013/077889 patent/WO2014077073A1/en active Application Filing
- 2013-10-15 US US14/421,154 patent/US9695207B2/en active Active
- 2013-10-15 CN CN201380043243.7A patent/CN104603327B/en active Active
- 2013-10-15 JP JP2014546911A patent/JP6198280B2/en active Active
- 2013-10-15 SG SG11201501107XA patent/SG11201501107XA/en unknown
- 2013-10-15 KR KR1020157003286A patent/KR102149490B1/en active IP Right Grant
- 2013-10-28 TW TW102138949A patent/TWI609983B/en active
-
2017
- 2017-05-18 US US15/598,398 patent/US9988411B2/en active Active
- 2017-05-18 US US15/598,450 patent/US10150789B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201422841A (en) | 2014-06-16 |
| JP6198280B2 (en) | 2017-09-20 |
| KR20150084757A (en) | 2015-07-22 |
| US20150203521A1 (en) | 2015-07-23 |
| WO2014077073A1 (en) | 2014-05-22 |
| US10150789B2 (en) | 2018-12-11 |
| CN104603327A (en) | 2015-05-06 |
| US20170253624A1 (en) | 2017-09-07 |
| JPWO2014077073A1 (en) | 2017-01-05 |
| KR102149490B1 (en) | 2020-08-28 |
| US20170253625A1 (en) | 2017-09-07 |
| US9695207B2 (en) | 2017-07-04 |
| TWI609983B (en) | 2018-01-01 |
| US9988411B2 (en) | 2018-06-05 |
| CN104603327B (en) | 2017-12-01 |
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