BR112016001710A2 - método para fabricação de uma nanoestrutura e artigos nanoestruturados - Google Patents

método para fabricação de uma nanoestrutura e artigos nanoestruturados

Info

Publication number
BR112016001710A2
BR112016001710A2 BR112016001710A BR112016001710A BR112016001710A2 BR 112016001710 A2 BR112016001710 A2 BR 112016001710A2 BR 112016001710 A BR112016001710 A BR 112016001710A BR 112016001710 A BR112016001710 A BR 112016001710A BR 112016001710 A2 BR112016001710 A2 BR 112016001710A2
Authority
BR
Brazil
Prior art keywords
plasma
substrate
nanostructure
layer
compounds
Prior art date
Application number
BR112016001710A
Other languages
English (en)
Inventor
Franke Carsten
s bates Daniel
Seth Jayshree
s berger Michael
M David Moses
F Zehentmaier Sebastian
Yu Ta-Hua
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of BR112016001710A2 publication Critical patent/BR112016001710A2/pt

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0227Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/013Etching
    • B81C2201/0132Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/60Details of absorbing elements characterised by the structure or construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3341Reactive etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

resumo “método para fabricação de uma nanoestrutura e artigos nanoestruturados” trata-se de um método para fabricação de uma nanoestrutura e artigos na-noestruturados através da deposição de uma camada em uma superfície principal de um substrato por deposição química por vapor assistida por plasma a partir de uma mistura gasosa enquanto a superfície é substancial e simultaneamente grava-da com uma espécie reativa. o método inclui fornecer um substrato, misturar uma primeira espécie gasosa capaz de depositar uma camada sobre o substrato quando transformada em um plasma com uma segunda espécie gasosa capaz de gravar o substrato quando transformada em um plasma, formando, portanto, uma mistura gasosa; transformar a mistura gasosa em um plasma e expor uma superfície do substrato ao plasma, sendo que a superfície é gravada e uma camada é depositada sobre ao menos uma porção da superfície gravada formando substancial e simulta-neamente, dessa forma, a nanoestrutura. o substrato pode ser um material (co)polimérico, um material inorgânico, uma liga, uma solução sólida ou uma com-binação dos mesmos. a camada depositada pode incluir o produto da reação da de-posição química por vapor assistida por plasma com uso de um gás reagente que compreende um composto selecionado do grupo que consiste em compostos de organossilício, compostos metálicos de alquila, compostos de isopropóxido metálico, compostos de acetilacetonato metálico, compostos de haleto metálico e combina-ções dos mesmos. nanoestruturas de alta razão de aspecto e opcionalmente com dimensões aleatórias em ao menos uma dimensão e, de preferência, em três di-mensões ortogonais podem ser preparadas.
BR112016001710A 2013-07-26 2014-07-23 método para fabricação de uma nanoestrutura e artigos nanoestruturados BR112016001710A2 (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361858670P 2013-07-26 2013-07-26
US201361867733P 2013-08-20 2013-08-20
US201462018761P 2014-06-30 2014-06-30
PCT/US2014/047782 WO2015013387A1 (en) 2013-07-26 2014-07-23 Method of making a nanostructure and nanostructured articles

Publications (1)

Publication Number Publication Date
BR112016001710A2 true BR112016001710A2 (pt) 2017-08-01

Family

ID=52393807

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016001710A BR112016001710A2 (pt) 2013-07-26 2014-07-23 método para fabricação de uma nanoestrutura e artigos nanoestruturados

Country Status (8)

Country Link
US (1) US10119190B2 (pt)
EP (1) EP3024777B1 (pt)
JP (1) JP6505693B2 (pt)
KR (2) KR20160037961A (pt)
CN (1) CN105431376B (pt)
BR (1) BR112016001710A2 (pt)
SG (2) SG11201600606TA (pt)
WO (1) WO2015013387A1 (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015153601A1 (en) 2014-04-03 2015-10-08 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US12060505B2 (en) 2015-02-27 2024-08-13 3M Innovative Properties Company Double coated tape
EP3313458A1 (en) 2015-06-29 2018-05-02 3M Innovative Properties Company Anti-microbial articles and methods of using same
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
EP3373984B1 (en) 2015-11-13 2020-12-23 3M Innovative Properties Company Anti-microbial articles and methods of using same
WO2017083482A1 (en) 2015-11-13 2017-05-18 3M Innovative Properties Company Anti-microbial articles and methods of using same
EP3455319A4 (en) * 2016-05-13 2019-12-25 3M Innovative Properties Company HEAT-RESISTANT PROTECTIVE FILM BASED ON SILOXANE
CN106542494B (zh) * 2016-09-26 2017-12-26 西北工业大学 一种用于制备多层不等高微纳结构的方法
CN106549074A (zh) * 2016-12-08 2017-03-29 上海空间电源研究所 一种用于临近空间环境的薄硅太阳电池组件及其制备方法
WO2018208574A1 (en) * 2017-05-10 2018-11-15 3M Innovative Properties Company Fluoropolymer articles and related methods
EP3732733A1 (en) 2017-12-29 2020-11-04 3M Innovative Properties Company Anti-reflective surface structures
JP2021509487A (ja) 2018-01-05 2021-03-25 スリーエム イノベイティブ プロパティズ カンパニー 迷光吸収フィルム
EP3759190A1 (en) 2018-02-28 2021-01-06 3M Innovative Properties Company Adhesives comprising polymerized units of secondary hexyl (meth)acrylates
WO2020039347A1 (en) 2018-08-23 2020-02-27 3M Innovative Properties Company Photochromic articles
US20210292570A1 (en) 2018-08-31 2021-09-23 3M Innovative Properties Company Articles including nanostructured surfaces and interpenetrating layers, and methods of making same
US20220177303A1 (en) 2019-05-08 2022-06-09 3M Innovative Properties Company Nanostructured article
CN113727827A (zh) * 2019-06-11 2021-11-30 纳卢克斯株式会社 在表面具备微细凹凸结构的塑料元件的制造方法
CN110329985B (zh) * 2019-06-18 2022-02-15 长沙新材料产业研究院有限公司 一种金刚石表面复杂结构及其制备方法
WO2021152479A1 (en) * 2020-01-29 2021-08-05 3M Innovative Properties Company Nanostructured article
WO2022090901A1 (en) 2020-10-30 2022-05-05 3M Innovative Properties Company Ultraviolet c (uv-c) light reflector including fluoropolymer films
WO2022162614A1 (en) 2021-01-28 2022-08-04 3M Innovative Properties Company Antimicrobial compositions and articles and related methods
CN114171641B (zh) * 2021-11-30 2024-05-31 北京燕东微电子科技有限公司 氧化钒薄膜的刻蚀方法与半导体器件的制造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340276A (en) 1978-11-01 1982-07-20 Minnesota Mining And Manufacturing Company Method of producing a microstructured surface and the article produced thereby
DK152140B (da) 1979-02-16 1988-02-01 Kuesters Eduard Maschf Fremgangsmaade og apparat til moenstring af en fremfoert varebane
GB2064987B (en) 1979-11-14 1983-11-30 Toray Industries Process for producing transparent shaped article having enhanced anti-reflective effect
JPS6294955A (ja) * 1985-10-21 1987-05-01 Nec Corp 素子分離方法
US5888594A (en) 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US6534409B1 (en) 1996-12-04 2003-03-18 Micron Technology, Inc. Silicon oxide co-deposition/etching process
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6582823B1 (en) 1999-04-30 2003-06-24 North Carolina State University Wear-resistant polymeric articles and methods of making the same
EP1208002A4 (en) * 1999-06-03 2006-08-02 Penn State Res Found MATERIALS WITH NETWORK OF SURFACE POROSITY COLUMNS DEPOSITED IN THIN FILM
KR20020046232A (ko) * 1999-06-03 2002-06-20 토마스 제이. 모나한 침착된 박막 보이드-칼럼 네트워크 물질
JP3691689B2 (ja) * 1999-08-03 2005-09-07 住友精密工業株式会社 エッチング表面の親水性化方法
US6391788B1 (en) * 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6919119B2 (en) 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
WO2002025714A1 (en) * 2000-09-20 2002-03-28 Infineon Technologies Sc300 Gmbh & Co. Kg A process for dry-etching a semiconductor wafer surface
US7956525B2 (en) * 2003-05-16 2011-06-07 Nanomix, Inc. Flexible nanostructure electronic devices
US6726979B2 (en) 2002-02-26 2004-04-27 Saint-Gobain Performance Plastics Corporation Protective glazing laminate
US7074723B2 (en) * 2002-08-02 2006-07-11 Applied Materials, Inc. Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system
DE10241708B4 (de) 2002-09-09 2005-09-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reduzierung der Grenzflächenreflexion von Kunststoffsubstraten sowie derart modifiziertes Substrat und dessen Verwendung
JP4987716B2 (ja) 2004-08-18 2012-07-25 ダウ・コーニング・コーポレイション 水素化シリコンオキシカーバイド(H:SiOC)でコーティングされた基板およびその製造方法
CN100593015C (zh) * 2005-12-09 2010-03-03 中国科学院物理研究所 一种表面纳米锥阵列及其制作方法
DE102006017716A1 (de) 2006-04-15 2007-10-18 Forschungszentrum Jülich GmbH Vorrichtung zur Messung biomedizinischer Daten eines Probanden und Verfahren zur Stimulation des Probanden mit in Echtzeit verarbeiteten Daten
KR101615787B1 (ko) * 2008-12-30 2016-04-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 나노구조화 표면의 제조 방법
KR101721721B1 (ko) * 2010-05-03 2017-03-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 나노구조의 제조 방법
CN102653390A (zh) * 2012-04-18 2012-09-05 北京大学 使用混合气体刻蚀制备纳米森林结构的方法

Also Published As

Publication number Publication date
WO2015013387A1 (en) 2015-01-29
EP3024777A1 (en) 2016-06-01
SG10201704677QA (en) 2017-07-28
KR20160037961A (ko) 2016-04-06
KR20210151999A (ko) 2021-12-14
US20170067150A1 (en) 2017-03-09
CN105431376B (zh) 2018-08-31
SG11201600606TA (en) 2016-02-26
JP2016532576A (ja) 2016-10-20
CN105431376A (zh) 2016-03-23
JP6505693B2 (ja) 2019-04-24
EP3024777B1 (en) 2024-05-15
EP3024777A4 (en) 2017-01-11
US10119190B2 (en) 2018-11-06

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2472 DE 22-05-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.