BRPI0515714A - processo para preparar um revestimento em múltiplas camadas na superfìcie de um substrato polimérico orgánico por meio de uma deposição por plasma à pressão atmosférica - Google Patents
processo para preparar um revestimento em múltiplas camadas na superfìcie de um substrato polimérico orgánico por meio de uma deposição por plasma à pressão atmosféricaInfo
- Publication number
- BRPI0515714A BRPI0515714A BRPI0515714-5A BRPI0515714A BRPI0515714A BR PI0515714 A BRPI0515714 A BR PI0515714A BR PI0515714 A BRPI0515714 A BR PI0515714A BR PI0515714 A BRPI0515714 A BR PI0515714A
- Authority
- BR
- Brazil
- Prior art keywords
- atmospheric pressure
- plasma deposition
- layer
- polymeric substrate
- organic polymeric
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2201/00—Polymeric substrate or laminate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/52—Two layers
- B05D7/53—Base coat plus clear coat type
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Physical Vapour Deposition (AREA)
Abstract
"PROCESSO PARA PREPARAR UM REVESTIMENTO EM MúLTIPLAS CAMADAS NA SUPERFìCIE DE UM SUBSTRATO POLIMéRICO ORGáNICO POR MEIO DE UMA DEPOSIçãO POR PLASMA à PRESSãO ATMOSFéRICA". A presente invenção provê um processo para preparar um revestimento de camadas múltiplas sobre a superfície de um substrato polimérico orgânico por meio de deposição por plasma à pressão atmosférica, as etapas do processo compreendendo depositar uma camada (primeira camada) de um composto de organossilício altamente aderente, oticamente límpido, polimerizado por plasma sobre a superfície do substrato polimérico orgânico via deposição por plasma à pressão atmosférica de uma mistura gasosa compreendendo um composto reagente de organossilício e opcionalmente um oxidante em uma primeira etapa e, e seguida, em uma segunda etapa, depositar uma camada substancialmente uniforme (segunda camada) de um composto de óxido de silício sobre a superfície exposta da dita primeira camada através de deposição por plasma à pressão atmosférica de uma mistura gasosa compreendendo um oxidante e um composto reagente de organossilício, sendo que a razão molar de oxidante para reagente de ortossilício na mistura gasosa se maior na segunda etapa que na primeira etapa.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61349004P | 2004-09-27 | 2004-09-27 | |
PCT/US2005/031456 WO2006036461A1 (en) | 2004-09-27 | 2005-09-02 | Multilayer coatings by plasma enhanced chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0515714A true BRPI0515714A (pt) | 2008-07-29 |
Family
ID=35658976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0515714-5A BRPI0515714A (pt) | 2004-09-27 | 2005-09-02 | processo para preparar um revestimento em múltiplas camadas na superfìcie de um substrato polimérico orgánico por meio de uma deposição por plasma à pressão atmosférica |
Country Status (11)
Country | Link |
---|---|
US (1) | US20080095954A1 (pt) |
EP (1) | EP1807545A1 (pt) |
JP (1) | JP2008514813A (pt) |
KR (1) | KR20070057200A (pt) |
CN (1) | CN101031669A (pt) |
BR (1) | BRPI0515714A (pt) |
CA (1) | CA2578354A1 (pt) |
MX (1) | MX2007003561A (pt) |
RU (1) | RU2007115923A (pt) |
TW (1) | TW200617200A (pt) |
WO (1) | WO2006036461A1 (pt) |
Families Citing this family (50)
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JP2008518109A (ja) * | 2004-10-29 | 2008-05-29 | ダウ グローバル テクノロジーズ インコーポレイティド | プラズマ増強化学蒸着法による耐摩耗性被膜 |
US7873561B1 (en) | 2005-05-05 | 2011-01-18 | Archipelago Holdings, Inc. | Method and system for maintaining an order on a selected market center with maximum price exemption parameter |
JP2008541230A (ja) | 2005-05-05 | 2008-11-20 | アーキペラゴ ホールディングス インコーポレイテッド | 対大口価格改定注文 |
AU2006244483B2 (en) | 2005-05-05 | 2012-05-31 | Nyse Group, Inc. | Tracking liquidity order |
US7912775B1 (en) | 2005-05-05 | 2011-03-22 | Archipelago Holdings, Inc. | Liquidity analysis system and method |
KR101498748B1 (ko) * | 2007-05-01 | 2015-03-09 | 엑사테크 엘.엘.씨. | 플라즈마 코팅의 엣지 힐링 및 필드 보수 |
JP5543915B2 (ja) * | 2007-05-21 | 2014-07-09 | ルブリゾル アドバンスド マテリアルズ, インコーポレイテッド | ポリウレタンポリマー |
US20100323127A1 (en) * | 2007-07-30 | 2010-12-23 | Christina Ann Rhoton | Atmospheric pressure plasma enhanced chemical vapor deposition process |
GB0717430D0 (en) * | 2007-09-10 | 2007-10-24 | Dow Corning Ireland Ltd | Atmospheric pressure plasma |
DE102007043650A1 (de) | 2007-09-13 | 2009-04-02 | Siemens Ag | Verfahren zur Verbesserung der Eigenschaften von Beschichtungen |
US20100255216A1 (en) * | 2007-11-29 | 2010-10-07 | Haley Jr Robert P | Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate |
EP2396451B1 (en) * | 2009-02-12 | 2012-11-07 | Fujifilm Manufacturing Europe BV | Two layer barrier on polymeric substrate |
US8305829B2 (en) | 2009-02-23 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same |
US8305790B2 (en) | 2009-03-16 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical anti-fuse and related applications |
JP5491755B2 (ja) * | 2009-03-26 | 2014-05-14 | パナソニック株式会社 | 成膜装置 |
US8957482B2 (en) | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
US8912602B2 (en) | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
US8461015B2 (en) | 2009-07-08 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI structure and method of forming bottom void in same |
US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
US8264032B2 (en) | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
US8482073B2 (en) | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
US8187928B2 (en) | 2010-09-21 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuits |
US8629478B2 (en) | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US8264021B2 (en) * | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US8472227B2 (en) | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US8298925B2 (en) | 2010-11-08 | 2012-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
DE102009046947B4 (de) * | 2009-11-20 | 2015-04-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit stickstoffhaltiger plasmapolymerer Beschichtung, dessen Verwendung und Verfahren zu dessen Herstellung |
US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
GB201012225D0 (en) * | 2010-07-21 | 2010-09-08 | Fujifilm Mfg Europe Bv | Method for manufacturing a barrier layer on a substrate and a multi-layer stack |
GB201012226D0 (en) * | 2010-07-21 | 2010-09-08 | Fujifilm Mfg Europe Bv | Method for manufacturing a barrier on a sheet and a sheet for PV modules |
US8603924B2 (en) * | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
US9048181B2 (en) | 2010-11-08 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8769446B2 (en) | 2010-11-12 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
US8592915B2 (en) | 2011-01-25 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped oxide for shallow trench isolation (STI) |
US8877602B2 (en) | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
US8431453B2 (en) | 2011-03-31 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure |
KR101381244B1 (ko) * | 2011-12-21 | 2014-04-04 | 광주과학기술원 | 소수성 고분자 박막의 표면 개질 방법 및 표면 개질된 소수성 고분자 박막 |
EP2809453B1 (en) | 2012-02-02 | 2016-11-02 | Centre de Recherche Public Henri Tudor | Superamphiphobic surfaces by atmospheric plasma polymerization |
JP5794184B2 (ja) * | 2012-03-21 | 2015-10-14 | 東洋製罐株式会社 | 蒸着膜を備えたポリ乳酸成形体及びその製造方法 |
GB2516978B (en) * | 2013-08-09 | 2016-06-08 | Innovia Films Ltd | Process for manufacturing a release liner |
GB2539231B (en) * | 2015-06-10 | 2017-08-23 | Semblant Ltd | Coated electrical assembly |
US10487403B2 (en) * | 2016-12-13 | 2019-11-26 | Silcotek Corp | Fluoro-containing thermal chemical vapor deposition process and article |
GB201621177D0 (en) | 2016-12-13 | 2017-01-25 | Semblant Ltd | Protective coating |
EP3401358B1 (de) | 2017-05-08 | 2021-04-14 | Carl Freudenberg KG | Plasma-beschichtetes dichtelement |
EP3940106A1 (de) * | 2020-07-15 | 2022-01-19 | TI Automotive Engineering Centre (Heidelberg) GmbH | Verfahren zum beschichten einer rohrleitung und rohrleitung |
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JP4494792B2 (ja) * | 2002-02-05 | 2010-06-30 | ダウ グローバル テクノロジーズ インコーポレイティド | 支持体上へのコロナによる化学蒸着 |
US7109070B2 (en) * | 2002-08-07 | 2006-09-19 | Schot Glas | Production of a composite material having a biodegradable plastic substrate and at least one coating |
-
2005
- 2005-09-02 EP EP05809910A patent/EP1807545A1/en not_active Withdrawn
- 2005-09-02 US US11/661,055 patent/US20080095954A1/en not_active Abandoned
- 2005-09-02 CA CA002578354A patent/CA2578354A1/en not_active Abandoned
- 2005-09-02 BR BRPI0515714-5A patent/BRPI0515714A/pt not_active IP Right Cessation
- 2005-09-02 RU RU2007115923/02A patent/RU2007115923A/ru not_active Application Discontinuation
- 2005-09-02 CN CNA2005800327328A patent/CN101031669A/zh active Pending
- 2005-09-02 MX MX2007003561A patent/MX2007003561A/es not_active Application Discontinuation
- 2005-09-02 KR KR1020077006844A patent/KR20070057200A/ko not_active Application Discontinuation
- 2005-09-02 WO PCT/US2005/031456 patent/WO2006036461A1/en active Application Filing
- 2005-09-02 JP JP2007533504A patent/JP2008514813A/ja active Pending
- 2005-09-26 TW TW094133357A patent/TW200617200A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2008514813A (ja) | 2008-05-08 |
EP1807545A1 (en) | 2007-07-18 |
KR20070057200A (ko) | 2007-06-04 |
WO2006036461A1 (en) | 2006-04-06 |
CN101031669A (zh) | 2007-09-05 |
MX2007003561A (es) | 2007-10-10 |
CA2578354A1 (en) | 2006-04-06 |
TW200617200A (en) | 2006-06-01 |
US20080095954A1 (en) | 2008-04-24 |
RU2007115923A (ru) | 2008-11-10 |
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Legal Events
Date | Code | Title | Description |
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