TW200617200A - Multilayer coatings by plasma enhanced chemical vapor deposition - Google Patents

Multilayer coatings by plasma enhanced chemical vapor deposition

Info

Publication number
TW200617200A
TW200617200A TW094133357A TW94133357A TW200617200A TW 200617200 A TW200617200 A TW 200617200A TW 094133357 A TW094133357 A TW 094133357A TW 94133357 A TW94133357 A TW 94133357A TW 200617200 A TW200617200 A TW 200617200A
Authority
TW
Taiwan
Prior art keywords
layer
oxidant
atmospheric pressure
gaseous mixture
vapor deposition
Prior art date
Application number
TW094133357A
Other languages
English (en)
Inventor
Aaron M Gabelnick
Christina A Lambert
Original Assignee
Dow Global Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies Inc filed Critical Dow Global Technologies Inc
Publication of TW200617200A publication Critical patent/TW200617200A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/123—Treatment by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2201/00—Polymeric substrate or laminate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
    • B05D7/52—Two layers
    • B05D7/53—Base coat plus clear coat type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW094133357A 2004-09-27 2005-09-26 Multilayer coatings by plasma enhanced chemical vapor deposition TW200617200A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61349004P 2004-09-27 2004-09-27

Publications (1)

Publication Number Publication Date
TW200617200A true TW200617200A (en) 2006-06-01

Family

ID=35658976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133357A TW200617200A (en) 2004-09-27 2005-09-26 Multilayer coatings by plasma enhanced chemical vapor deposition

Country Status (11)

Country Link
US (1) US20080095954A1 (zh)
EP (1) EP1807545A1 (zh)
JP (1) JP2008514813A (zh)
KR (1) KR20070057200A (zh)
CN (1) CN101031669A (zh)
BR (1) BRPI0515714A (zh)
CA (1) CA2578354A1 (zh)
MX (1) MX2007003561A (zh)
RU (1) RU2007115923A (zh)
TW (1) TW200617200A (zh)
WO (1) WO2006036461A1 (zh)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2582286A1 (en) * 2004-10-29 2006-05-11 Dow Global Technologies Inc. Abrasion resistant coatings by plasma enhanced chemical vapor deposition
US7873561B1 (en) 2005-05-05 2011-01-18 Archipelago Holdings, Inc. Method and system for maintaining an order on a selected market center with maximum price exemption parameter
WO2006121687A2 (en) 2005-05-05 2006-11-16 Archipelago Holdings, Inc. Reprice-to-block order
US7912775B1 (en) 2005-05-05 2011-03-22 Archipelago Holdings, Inc. Liquidity analysis system and method
AU2006244483B2 (en) 2005-05-05 2012-05-31 Nyse Group, Inc. Tracking liquidity order
US9950481B2 (en) * 2007-05-01 2018-04-24 Exatec Llc Edge healing and field repair of plasma coating
DE602008002592D1 (de) * 2007-05-21 2010-10-28 Lubrizol Advanced Mat Inc Harte, aliphatische thermoplastische Polyurethane
EP2183407A1 (en) * 2007-07-30 2010-05-12 Dow Global Technologies Inc. Atmospheric pressure plasma enhanced chemical vapor deposition process
GB0717430D0 (en) * 2007-09-10 2007-10-24 Dow Corning Ireland Ltd Atmospheric pressure plasma
DE102007043650A1 (de) * 2007-09-13 2009-04-02 Siemens Ag Verfahren zur Verbesserung der Eigenschaften von Beschichtungen
US20100255216A1 (en) * 2007-11-29 2010-10-07 Haley Jr Robert P Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate
JP2012517530A (ja) * 2009-02-12 2012-08-02 フジフィルム・マニュファクチュアリング・ヨーロッパ・ベスローテン・フエンノートシャップ ポリマー基材上の２層バリヤー
US8305829B2 (en) 2009-02-23 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same
US8305790B2 (en) 2009-03-16 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical anti-fuse and related applications
JP5491755B2 (ja) * 2009-03-26 2014-05-14 パナソニック株式会社 成膜装置
US8957482B2 (en) 2009-03-31 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse and related applications
US8912602B2 (en) 2009-04-14 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US8461015B2 (en) 2009-07-08 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. STI structure and method of forming bottom void in same
US9484462B2 (en) 2009-09-24 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of fin field effect transistor
US8482073B2 (en) 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
US8264021B2 (en) * 2009-10-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Finfets and methods for forming the same
US8472227B2 (en) 2010-01-27 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and methods for forming the same
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US8187928B2 (en) 2010-09-21 2012-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming integrated circuits
US8298925B2 (en) 2010-11-08 2012-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8264032B2 (en) 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US8759943B2 (en) 2010-10-08 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having notched fin structure and method of making the same
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
US8497528B2 (en) 2010-05-06 2013-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a strained structure
US8629478B2 (en) 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
DE102009046947B4 (de) * 2009-11-20 2015-04-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit stickstoffhaltiger plasmapolymerer Beschichtung, dessen Verwendung und Verfahren zu dessen Herstellung
US9040393B2 (en) 2010-01-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
GB201012225D0 (en) * 2010-07-21 2010-09-08 Fujifilm Mfg Europe Bv Method for manufacturing a barrier layer on a substrate and a multi-layer stack
GB201012226D0 (en) * 2010-07-21 2010-09-08 Fujifilm Mfg Europe Bv Method for manufacturing a barrier on a sheet and a sheet for PV modules
US8603924B2 (en) * 2010-10-19 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming gate dielectric material
US9048181B2 (en) 2010-11-08 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8769446B2 (en) 2010-11-12 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for increasing fin device density for unaligned fins
US8592915B2 (en) 2011-01-25 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Doped oxide for shallow trench isolation (STI)
US8877602B2 (en) 2011-01-25 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms of doping oxide for forming shallow trench isolation
US8431453B2 (en) 2011-03-31 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
KR101381244B1 (ko) * 2011-12-21 2014-04-04 광주과학기술원 소수성 고분자 박막의 표면 개질 방법 및 표면 개질된 소수성 고분자 박막
WO2013113875A1 (en) * 2012-02-02 2013-08-08 Centre De Recherche Public Henri Tudor Superamphiphobic surfaces by atmospheric plasma polymerization
JP5794184B2 (ja) * 2012-03-21 2015-10-14 東洋製罐株式会社 蒸着膜を備えたポリ乳酸成形体及びその製造方法
GB2516978B (en) * 2013-08-09 2016-06-08 Innovia Films Ltd Process for manufacturing a release liner
GB2539231B (en) * 2015-06-10 2017-08-23 Semblant Ltd Coated electrical assembly
US10487403B2 (en) * 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating
EP3401358B1 (de) * 2017-05-08 2021-04-14 Carl Freudenberg KG Plasma-beschichtetes dichtelement
EP3940106A1 (de) * 2020-07-15 2022-01-19 TI Automotive Engineering Centre (Heidelberg) GmbH Verfahren zum beschichten einer rohrleitung und rohrleitung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415796A (en) * 1966-03-24 1968-12-10 Rohm & Haas Extruded matte finish acrylic film
US3562235A (en) * 1968-06-07 1971-02-09 Rohm & Haas Multistage emulsion polymerization of alkyl acrylates and alkyl methacrylates
US3654069A (en) * 1969-11-12 1972-04-04 Rohm & Haas Polystyrene laminate and adhesive-coated film for lamination to polystyrene
US3812205A (en) * 1970-04-13 1974-05-21 Rohm & Haas Process for preparing graftlinked heteropolymer film
DE3413019A1 (de) * 1984-04-06 1985-10-17 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum aufbringen einer duennen, transparenten schicht auf der oberflaeche optischer elemente
DE3710443A1 (de) * 1987-03-30 1988-10-20 Weatherford Oil Tool Einrichtung zum pruefen der gasdichtigkeit von hohlraumwaenden
US5527629A (en) * 1990-12-17 1996-06-18 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process of depositing a layer of silicon oxide bonded to a substrate of polymeric material using high pressure and electrical discharge
US5298587A (en) * 1992-12-21 1994-03-29 The Dow Chemical Company Protective film for articles and method
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
CN1074006C (zh) * 1995-10-13 2001-10-31 陶氏化学公司 涂覆的塑料基材
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6426125B1 (en) * 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6376064B1 (en) * 1999-12-13 2002-04-23 General Electric Company Layered article with improved microcrack resistance and method of making
US6815014B2 (en) * 2002-02-05 2004-11-09 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate
US7109070B2 (en) * 2002-08-07 2006-09-19 Schot Glas Production of a composite material having a biodegradable plastic substrate and at least one coating

Also Published As

Publication number Publication date
CN101031669A (zh) 2007-09-05
US20080095954A1 (en) 2008-04-24
WO2006036461A1 (en) 2006-04-06
BRPI0515714A (pt) 2008-07-29
RU2007115923A (ru) 2008-11-10
CA2578354A1 (en) 2006-04-06
MX2007003561A (es) 2007-10-10
KR20070057200A (ko) 2007-06-04
EP1807545A1 (en) 2007-07-18
JP2008514813A (ja) 2008-05-08

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