WO2012018211A3 - 사이클릭 박막 증착 방법 - Google Patents
사이클릭 박막 증착 방법 Download PDFInfo
- Publication number
- WO2012018211A3 WO2012018211A3 PCT/KR2011/005650 KR2011005650W WO2012018211A3 WO 2012018211 A3 WO2012018211 A3 WO 2012018211A3 KR 2011005650 W KR2011005650 W KR 2011005650W WO 2012018211 A3 WO2012018211 A3 WO 2012018211A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- chamber
- depositing
- thin film
- reaction
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title abstract 6
- 125000004122 cyclic group Chemical group 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 239000006227 byproduct Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000010926 purge Methods 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 2
- 239000012686 silicon precursor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000280 densification Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/4554—Plasma being used non-continuously in between ALD reactions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/808,111 US20130101752A1 (en) | 2010-08-02 | 2011-08-01 | Method for depositing cyclic thin film |
CN201180036295.2A CN103026471B (zh) | 2010-08-02 | 2011-08-01 | 环状薄膜的沉积方法 |
JP2013521723A JP2013542581A (ja) | 2010-08-02 | 2011-08-01 | サイクリック薄膜の蒸着方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100074608A KR101147727B1 (ko) | 2010-08-02 | 2010-08-02 | 사이클릭 박막 증착 방법 |
KR10-2010-0074608 | 2010-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012018211A2 WO2012018211A2 (ko) | 2012-02-09 |
WO2012018211A3 true WO2012018211A3 (ko) | 2012-05-03 |
Family
ID=45559917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/005650 WO2012018211A2 (ko) | 2010-08-02 | 2011-08-01 | 사이클릭 박막 증착 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130101752A1 (ko) |
JP (1) | JP2013542581A (ko) |
KR (1) | KR101147727B1 (ko) |
CN (1) | CN103026471B (ko) |
TW (1) | TWI474399B (ko) |
WO (1) | WO2012018211A2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101494274B1 (ko) * | 2013-11-08 | 2015-02-17 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 비휘발성 메모리 셀 |
KR101551199B1 (ko) * | 2013-12-27 | 2015-09-10 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자 |
KR101576637B1 (ko) * | 2014-07-15 | 2015-12-10 | 주식회사 유진테크 | 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법 |
TW201606116A (zh) * | 2014-08-08 | 2016-02-16 | 尤金科技有限公司 | 具低蝕刻率之氧化薄膜之沉積方法及半導體裝置 |
KR101576639B1 (ko) * | 2014-09-18 | 2015-12-10 | 주식회사 유진테크 | 절연막 증착 방법 |
KR102362534B1 (ko) * | 2014-12-08 | 2022-02-15 | 주성엔지니어링(주) | 기판 처리방법 |
JP2017139297A (ja) * | 2016-02-02 | 2017-08-10 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR102125474B1 (ko) * | 2016-12-05 | 2020-06-24 | 주식회사 원익아이피에스 | 박막 증착 방법 |
WO2019245702A1 (en) | 2018-06-19 | 2019-12-26 | Applied Materials, Inc. | Pulsed plasma deposition etch step coverage improvement |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020081902A (ko) * | 2001-04-20 | 2002-10-30 | 아남반도체 주식회사 | 산소 라디칼을 이용한 실리콘 산화막의 제조 방법 |
KR20070055898A (ko) * | 2005-11-28 | 2007-05-31 | 주식회사 에이이티 | 실리콘 박막의 원자층 증착 방법 |
KR20080071515A (ko) * | 2007-01-30 | 2008-08-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20090016403A (ko) * | 2007-08-10 | 2009-02-13 | 에이에스엠지니텍코리아 주식회사 | 실리콘 산화막 증착 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140246A (en) * | 1997-12-18 | 2000-10-31 | Advanced Micro Devices, Inc. | In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates |
US7297641B2 (en) * | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
JP4257576B2 (ja) * | 2003-03-25 | 2009-04-22 | ローム株式会社 | 成膜装置 |
DE10319540A1 (de) * | 2003-04-30 | 2004-11-25 | Infineon Technologies Ag | Verfahren zur ALD-Beschichtung von Substraten sowie eine zur Durchführung des Verfahrens geeignete Vorrichtung |
US7192849B2 (en) * | 2003-05-07 | 2007-03-20 | Sensor Electronic Technology, Inc. | Methods of growing nitride-based film using varying pulses |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
JP4550778B2 (ja) * | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
US20080014759A1 (en) * | 2006-07-12 | 2008-01-17 | Applied Materials, Inc. | Method for fabricating a gate dielectric layer utilized in a gate structure |
US7723771B2 (en) * | 2007-03-30 | 2010-05-25 | Qimonda Ag | Zirconium oxide based capacitor and process to manufacture the same |
JP2009206312A (ja) * | 2008-02-28 | 2009-09-10 | Mitsui Eng & Shipbuild Co Ltd | 成膜方法および成膜装置 |
JP5190307B2 (ja) * | 2008-06-29 | 2013-04-24 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
-
2010
- 2010-08-02 KR KR1020100074608A patent/KR101147727B1/ko active IP Right Grant
-
2011
- 2011-07-29 TW TW100127081A patent/TWI474399B/zh active
- 2011-08-01 CN CN201180036295.2A patent/CN103026471B/zh active Active
- 2011-08-01 US US13/808,111 patent/US20130101752A1/en not_active Abandoned
- 2011-08-01 WO PCT/KR2011/005650 patent/WO2012018211A2/ko active Application Filing
- 2011-08-01 JP JP2013521723A patent/JP2013542581A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020081902A (ko) * | 2001-04-20 | 2002-10-30 | 아남반도체 주식회사 | 산소 라디칼을 이용한 실리콘 산화막의 제조 방법 |
KR20070055898A (ko) * | 2005-11-28 | 2007-05-31 | 주식회사 에이이티 | 실리콘 박막의 원자층 증착 방법 |
KR20080071515A (ko) * | 2007-01-30 | 2008-08-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20090016403A (ko) * | 2007-08-10 | 2009-02-13 | 에이에스엠지니텍코리아 주식회사 | 실리콘 산화막 증착 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20130101752A1 (en) | 2013-04-25 |
TW201220397A (en) | 2012-05-16 |
CN103026471B (zh) | 2016-01-13 |
KR101147727B1 (ko) | 2012-05-25 |
WO2012018211A2 (ko) | 2012-02-09 |
KR20120012582A (ko) | 2012-02-10 |
JP2013542581A (ja) | 2013-11-21 |
TWI474399B (zh) | 2015-02-21 |
CN103026471A (zh) | 2013-04-03 |
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