BR112014000395A2 - películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto - Google Patents

películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto

Info

Publication number
BR112014000395A2
BR112014000395A2 BR112014000395A BR112014000395A BR112014000395A2 BR 112014000395 A2 BR112014000395 A2 BR 112014000395A2 BR 112014000395 A BR112014000395 A BR 112014000395A BR 112014000395 A BR112014000395 A BR 112014000395A BR 112014000395 A2 BR112014000395 A2 BR 112014000395A2
Authority
BR
Brazil
Prior art keywords
metal oxide
mixed metal
barrier films
oxide barrier
atomic layer
Prior art date
Application number
BR112014000395A
Other languages
English (en)
Inventor
R Dickey Eric
Original Assignee
Lotus Applied Tech Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lotus Applied Tech Llc filed Critical Lotus Applied Tech Llc
Publication of BR112014000395A2 publication Critical patent/BR112014000395A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

resumo películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto um método de formar uma película fina de camada de barreira (100) de um óxido de metal misto, tal como uma mistura de alumínio, titânio, e oxigênio (altio), compreende exposição sequencial de um substrato (110) tendo uma temperatura de superfície inferior a 100ºc para um precursor de haleto, um plasma de oxigênio, e um precursor metal orgânico. películas de barreira formadas pelo método exibem taxa de transmissão de vapor de água (wvtr) melhorada sobre as películas individuais de óxido de metal e nanolaminados de dois óxidos de metal tendo uma espessura total similar. 1/1
BR112014000395A 2011-07-11 2012-07-11 películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto BR112014000395A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161506607P 2011-07-11 2011-07-11
PCT/US2012/046308 WO2013009913A2 (en) 2011-07-11 2012-07-11 Mixed metal oxide barrier films and atomic layer deposition method for making mixed metal oxide barrier films

Publications (1)

Publication Number Publication Date
BR112014000395A2 true BR112014000395A2 (pt) 2017-02-14

Family

ID=47506903

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014000395A BR112014000395A2 (pt) 2011-07-11 2012-07-11 películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto

Country Status (7)

Country Link
US (1) US20130177760A1 (pt)
EP (1) EP2732071B1 (pt)
JP (1) JP6204911B2 (pt)
KR (1) KR102014321B1 (pt)
CN (1) CN103827350B (pt)
BR (1) BR112014000395A2 (pt)
WO (1) WO2013009913A2 (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134756A (zh) * 2013-04-30 2014-11-05 成均馆大学校产学协力团 多层封装薄膜
CN105518895B (zh) 2013-09-30 2017-08-01 株式会社Lg化学 用于有机电子器件的基板及其制造方法
KR20150109984A (ko) * 2014-03-21 2015-10-02 삼성전자주식회사 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
WO2016012046A1 (en) 2014-07-24 2016-01-28 Osram Gmbh Method for producing a barrier layer and carrier body comprising such a barrier layer
WO2016061524A1 (en) * 2014-10-17 2016-04-21 Dickey Eric R Deposition of high-quality mixed oxide barrier films
US20160108524A1 (en) * 2014-10-17 2016-04-21 Lotus Applied Technology, Llc High-speed deposition of mixed oxide barrier films
JP6259023B2 (ja) 2015-07-20 2018-01-10 ウルトラテック インク 電極系デバイス用のａｌｄ処理のためのマスキング方法
KR102129316B1 (ko) * 2018-02-12 2020-07-02 한국기계연구원 유무기 복합체 및 이의 제조방법
CN108893725B (zh) * 2018-08-06 2020-08-04 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
CN112175220B (zh) * 2020-09-03 2023-01-03 广东以色列理工学院 耐高温的改性聚丙烯薄膜及其制备方法和应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI64878C (fi) 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
US5262199A (en) * 1992-04-17 1993-11-16 Center For Innovative Technology Coating porous materials with metal oxides and other ceramics by MOCVD
TWI293091B (en) * 2001-09-26 2008-02-01 Tohcello Co Ltd Deposited film and process for producing the same
US7323422B2 (en) * 2002-03-05 2008-01-29 Asm International N.V. Dielectric layers and methods of forming the same
KR100467369B1 (ko) * 2002-05-18 2005-01-24 주식회사 하이닉스반도체 수소배리어막 및 그를 구비한 반도체장치의 제조 방법
US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
FR2857030B1 (fr) * 2003-07-01 2006-10-27 Saint Gobain Procede de depot d'oxyde de titane par source plasma
KR101210859B1 (ko) * 2004-08-18 2012-12-11 다우 코닝 코포레이션 피복 기판 및 이의 제조방법
KR100700450B1 (ko) * 2005-03-08 2007-03-28 주식회사 메카로닉스 원자층증착법에 의한 ｉｔｏ박막 제조방법 및 인듐 박막제조방법
JP4696926B2 (ja) * 2006-01-23 2011-06-08 株式会社デンソー 有機ｅｌ素子およびその製造方法
ATE507320T1 (de) 2006-03-26 2011-05-15 Lotus Applied Technology Llc Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten
EP2032738A1 (en) * 2006-06-16 2009-03-11 Fuji Film Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
US20100297798A1 (en) * 2006-07-27 2010-11-25 Adriani Paul M Individually Encapsulated Solar Cells and/or Solar Cell Strings
WO2009031886A2 (en) 2007-09-07 2009-03-12 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
JP2009110710A (ja) * 2007-10-26 2009-05-21 Denso Corp 有機ｅｌディスプレイおよびその製造方法
US8133599B2 (en) * 2008-11-19 2012-03-13 Ppg Industries Ohio, Inc Undercoating layers providing improved photoactive topcoat functionality
EP2364380A4 (en) 2008-12-05 2012-07-04 Lotus Applied Technology Llc HIGH SPEED DEPOSITION OF THIN LAYERS WITH ENHANCED BARRIER LAYER PROPERTIES
FI20095947A0 (fi) * 2009-09-14 2009-09-14 Beneq Oy Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja
KR101264257B1 (ko) * 2009-12-24 2013-05-23 경희대학교 산학협력단 저주파 ｐｅａｌｄ 장비를 이용한 플라스틱 기판용 배리어 필름 제조방법
US20120128867A1 (en) * 2010-11-23 2012-05-24 Paulson Charles A Method of forming conformal barrier layers for protection of thermoelectric materials

Also Published As

Publication number Publication date
JP2014524982A (ja) 2014-09-25
CN103827350A (zh) 2014-05-28
WO2013009913A2 (en) 2013-01-17
EP2732071A4 (en) 2015-03-18
US20130177760A1 (en) 2013-07-11
EP2732071A2 (en) 2014-05-21
CN103827350B (zh) 2016-01-13
JP6204911B2 (ja) 2017-09-27
KR20140039036A (ko) 2014-03-31
EP2732071B1 (en) 2020-06-03
KR102014321B1 (ko) 2019-11-04
WO2013009913A3 (en) 2013-03-21

Similar Documents

Publication Publication Date Title
BR112014000395A2 (pt) películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto
EP3095788A3 (en) Organoaminosilane precursors and methods for depositing films comprising same
WO2019055393A8 (en) Compositions and methods for depositing silicon-containing films
GB2563520A (en) Method providing for a storage element
WO2015091781A3 (en) Method of producing transition metal dichalcogenide layer
JP2012004549A5 (ja) 半導体装置
TW201612352A (en) Method for hydrophobization of surface of silicon-containing film by ALD
WO2011106072A3 (en) Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
MY198714A (en) Photovoltaic devices and method of manufacturing
BR112018000181A2 (pt) dispositivo fotovoltaico compreendendo material de perovskita
WO2013177269A3 (en) Zirconium-containing precursors for vapor deposition
WO2012067439A3 (ko) 다이아자다이엔계 금속 화합물, 이의 제조 방법 및 이를 이용한 박막 형성 방법
EP2535343A3 (en) Organoaminosilane precursors and methods for making and using same
WO2012167060A3 (en) Compositions and processes for depositing carbon-doped silicon-containing films
WO2012102809A3 (en) Polysilicon films by hdp-cvd
WO2011126748A3 (en) Depositing conformal boron nitride films
IN2014CN04267A (pt)
WO2014172131A3 (en) Methods of forming perovskite films
EA201300982A1 (ru) Твердый фармацевтический препарат с покрытием
WO2016061468A3 (en) High-speed deposition of mixed oxide barrier films
EP3139211A3 (en) Photomask blank
RU2016116523A (ru) Комбинированные составы бифентрина, включающие высокоплавкие средства защиты растений, для применения с жидкими удобрениями
WO2010071364A3 (ko) 금속 박막 또는 금속 산화물 박막 증착용 유기금속 전구체 화합물 및 이를 이용한 박막 증착 방법
JP2015079945A5 (pt)
MX2015014649A (es) Capa de protección contra la oxidación a base de cromo.

Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2522 DE 07-05-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.