US7554181B2 - Semiconductor device with non-overlapping chip mounting sections - Google Patents

Semiconductor device with non-overlapping chip mounting sections Download PDF

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Publication number
US7554181B2
US7554181B2 US11/053,326 US5332605A US7554181B2 US 7554181 B2 US7554181 B2 US 7554181B2 US 5332605 A US5332605 A US 5332605A US 7554181 B2 US7554181 B2 US 7554181B2
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United States
Prior art keywords
field effect
semiconductor chip
effect transistor
semiconductor
chip
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US11/053,326
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US20050218489A1 (en
Inventor
Yukihiro Satou
Tomoaki Uno
Nobuyoshi Matsuura
Masaki Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Renesas Electronics Corp
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Renesas Technology Corp
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Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIRAISHI, MASAKI, MATSUURA, NOBUYUOSHI, UNO, TOMOAKI, SATOU, YUKIHIRO
Publication of US20050218489A1 publication Critical patent/US20050218489A1/en
Priority to US11/680,758 priority Critical patent/US7554209B2/en
Priority to US12/464,135 priority patent/US7928589B2/en
Application granted granted Critical
Publication of US7554181B2 publication Critical patent/US7554181B2/en
Priority to US12/708,044 priority patent/US8013430B2/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NEC ELECTRONICS CORPORATION
Assigned to NEC ELECTRONICS CORPORATION reassignment NEC ELECTRONICS CORPORATION MERGER (SEE DOCUMENT FOR DETAILS). Assignors: RENESAS TECHNOLOGY CORP.
Priority to US13/188,613 priority patent/US8159054B2/en
Priority to US13/372,227 priority patent/US8350372B2/en
Priority to US13/717,464 priority patent/US8575733B2/en
Priority to US14/014,286 priority patent/US8796827B2/en
Priority to US14/322,320 priority patent/US9412701B2/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF ADDRESS Assignors: RENESAS ELECTRONICS CORPORATION
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    • H01L23/5386—Geometry or layout of the interconnection structure
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a semiconductor device technique, and particularly to a technique effective when applied to a semiconductor device having a power supply circuit.
  • a non-insulated type DC-DC converter used as a power supply circuit for a desk top type or notebook personal computer, a-server or a game machine or the like has a tendency to increase in current and frequency with respect to a CPU (Central Processing Unit) and a DSP or the like to be controlled.
  • a CPU Central Processing Unit
  • a DC-DC converter widely used as one example of a power supply circuit has a configuration wherein a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series.
  • the power MOS•FET for the high side switch has a switch function for control of the DC-DC converter, whereas the power MOS•FET for the low side switch has a switch function for synchronous rectification.
  • the two power MOS•FETs are alternately turned on/off while being synchronized with each other to perform conversion of a source or power supply voltage.
  • Such a DC-DC converter has been described in, for example, Japanese Unexamined Patent Publication No. 2002-217416, which discloses a technique wherein a power MOS•FET for high side and a power MOS•FET for low side are configured with the same package, and the efficiency of voltage conversion between the power MOS•FET for high side and the power MOS•FET for low side is improved (refer to a patent document 1).
  • Patent Document 1
  • Patent Document 2
  • the patent document 1 has disclosed the technique of incorporating two conductor chips of a switch semiconductor chip for a high side power MOS•FET and a switch semiconductor chip for a low side power MOS•FET into the same resin molded type package.
  • control circuits for controlling on/off operations of the switches in other words, driver circuits for driving the gates of the power MOS•FETs.
  • the driver circuits are configured by different packages including different semiconductor chips, the number of parts for constituting the DC-DC converter increases and hence a packaging area becomes large. Thus, there is a fear that a size reduction of the DC-DC converter cannot be achieved sufficiently.
  • the patent document 1 does not refer particularly to the control circuits for controlling the driver circuits.
  • Important objectives are how to adapt to a large current and an increase in frequency and to obtain a DC-DC converter small in size and high in the efficiency of voltage conversion in order to reduce or solve the above fears.
  • One object of the present invention is to provide a technique capable of improving voltage conversion efficiency of a semiconductor device.
  • Another object of the present invention is to provide a technique capable of scaling down a package of a semiconductor device.
  • a further object of the present invention is to provide a technique capable of reducing manufacturing cost of a semiconductor device.
  • a still further object of the present invention is to provide a technique capable of attaining an improvement in reliability of a semiconductor device.
  • a power transistor for a high side switch, a power transistor for a low side switch, and driver circuits that drive these are respectively constituted of different semiconductor chips.
  • the three semiconductor chips are accommodated or held in one package. Further, the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other. Described more specifically, a semiconductor device of the present invention comprises:
  • a first semiconductor chip disposed over the first chip mounting section and having a first field effect transistor
  • a third semiconductor chip disposed over the third chip mounting section and including control circuits for controlling the operations of the first and second field effect transistors;
  • the plurality of external terminals include a first power supply terminal that supplies an input power supply potential, a second power supply terminal that supplies a potential lower than the input power supply potential, signal terminals that control the control circuits of the third semiconductor chip, and an output terminal that outputs an output power supply potential to the outside,
  • the first field effect transistor has a source-to-drain path series-connected between the first power supply terminal and the output terminal
  • the second field effect transistor has a source-to-drain path series-connected between the output terminal and the second power supply terminal
  • control circuits of the third semiconductor chip control the gates of the first and second field effect transistors in accordance with control signals inputted to the signal terminals
  • the third semiconductor chip is disposed in such a manner that the distance between the third semiconductor chip and the first semiconductor chip becomes shorter than the distance between the third semiconductor chip and the second semiconductor chip.
  • a power transistor (first field effect transistor) for a high side switch, a power transistor (second field effect transistor) for a low side switch, and driver circuits (control circuits) that drive these are respectively constituted of different first through third semiconductor chips. Further, the three semiconductor chips are accommodated or held in one package. Furthermore, the first semiconductor chip including the power transistor (first field effect transistor) for the high side switch, and the third semiconductor chip including the driver circuits (control circuits) are disposed so as to approach each other. Thus, the optimum semiconductor device forming technology can be applied to constitute necessary circuit blocks. Further, the number of parts can be reduced. Furthermore, parasitic inductance components of wirings located inside and outside a package, which greatly influence high frequency characteristics, can be reduced. Thus, the speeding-up, downsizing and increasing efficiency of a semiconductor device can be achieved.
  • FIG. 1 is a circuit diagram showing one example of a semiconductor device according to a first embodiment of the present invention
  • FIG. 2 is a circuit diagram illustrating one example of a control circuit of the semiconductor device shown in FIG. 1 ;
  • FIG. 3 is a diagram for describing one example of a timing chart of the semiconductor device shown in FIG. 1 ;
  • FIG. 4 is an equivalent circuit diagram showing inductance components parasitized on a semiconductor device discussed by the present inventors
  • FIG. 5 is a diagram for describing a circuit operation discussed by the present inventors.
  • FIG. 6 is a diagram for describing a device section at the circuit operation of FIG. 5 ;
  • FIG. 7 is a diagram for describing one example of a configuration of the semiconductor device shown in FIG. 1 ;
  • FIG. 8 is a plan view showing one example of a package configuration of the semiconductor device shown in FIG. 1 ;
  • FIG. 9 is a cross-sectional view taken along line Y 1 -Y 1 of FIG. 8 ;
  • FIG. 10 is an assembly flow diagram showing a method for manufacturing the semiconductor device according to the first embodiment of the present invention.
  • FIG. 11 is a plan view illustrating one example of a unit area of a lead frame of the semiconductor device according to the first embodiment of the present invention.
  • FIG. 12 is a plan view depicting the back surface of the unit area of the lead frame shown in FIG. 11 ;
  • FIG. 13 is a plan view of the unit area of the lead frame, showing one example of an assembled state associated with steps of the assembly flow diagram shown in FIG. 10 ;
  • FIG. 14 is a plan view of the unit area of the lead frame, showing one example of an assembled state associated with steps of the assembly flow diagram shown in FIG. 10 ;
  • FIG. 15 is an enlarged plan view showing a semiconductor chip formed with a power MOS•FET on the high side, which is employed in the first embodiment of the present invention
  • FIG. 16 is a cross-sectional view taken along line B-B of FIG. 15 ;
  • FIG. 17 is a fragmentary enlarged cross-sectional view of the semiconductor chip of the semiconductor device shown in FIG. 16 ;
  • FIG. 18 is a cross-sectional view taken along line C-C of FIG. 15 ;
  • FIG. 19 is an enlarged plan view showing a semiconductor chip formed with a power MOS•FET on the low side, which is employed in the first embodiment of the present invention
  • FIG. 20 is a circuit configuration diagram illustrating control circuits of the semiconductor device shown in FIG. 1 ;
  • FIG. 21 is a diagram for describing a section of the control circuit of the semiconductor device shown in FIG. 1 ;
  • FIG. 22 is a plan view showing one example of a packaged state of the semiconductor device according to the first embodiment of the present invention.
  • FIG. 23 is a side view illustrating the semiconductor device shown in FIG. 21 ;
  • FIG. 24 is an overall plan view showing a surface side of a semiconductor device according to one embodiment of the present invention.
  • FIG. 25 is a side view illustrating the semiconductor device shown in FIG. 24 ;
  • FIG. 26 is an overall plan view showing the back surface side of the semiconductor device shown in FIG.
  • FIG. 27 is an overall perspective view illustrating an external appearance of the semiconductor device according to the one embodiment of the present invention.
  • FIG. 28 is a plan view showing one example of a package configuration of a semiconductor device according to a second embodiment of the present invention.
  • FIG. 29 is a plan view illustrating one example of a package configuration of a semiconductor device according to a third embodiment of the present invention.
  • FIG. 30 is a plan view showing one example of a package configuration of a semiconductor device according to a fourth embodiment of the present invention.
  • FIG. 31 is a plan view depicting one example of a package configuration of a semiconductor device according to a fifth embodiment of the present invention.
  • FIG. 32 is a plan view illustrating one example of a package configuration of a semiconductor device according to a sixth embodiment of the present invention.
  • FIG. 33 is a cross-sectional view taken along line D-D of FIG. 32 ;
  • FIG. 34 is an assembly flow diagram showing a method for manufacturing the semiconductor device according to the sixth embodiment of the present invention.
  • FIG. 35 is a plan view illustrating one example of the surface side of a unit area of a lead frame employed in a semiconductor device according to a seventh embodiment of the present invention.
  • FIG. 36 is a plan view showing one example of the back surface side of the unit area of the lead frame shown in FIG. 35 ;
  • FIG. 37 is a plan view illustrating one example of the surface side of a unit area of a lead frame employed in a semiconductor device according to an eighth embodiment of the present invention.
  • FIG. 38 is a plan view showing the back surface side of the unit area of the lead frame shown in FIG. 37 ;
  • FIG. 39 is a plan view illustrating one example of the surface side of a unit area of a lead frame employed in a semiconductor device according to a ninth embodiment of the present invention.
  • FIG. 40 is a plan view showing the back surface side of the unit area of the lead frame shown in FIG. 39 ;
  • FIG. 41 is a plan view illustrating one example of a package configuration of a semiconductor device according to a tenth embodiment of the present invention.
  • FIG. 42 is a cross-sectional view taken along line E-E of FIG. 41 ;
  • FIG. 43 is an assembly flow diagram showing a method for manufacturing a semiconductor device according to an eleventh embodiment of the present invention.
  • FIG. 44 is an assembly flow diagram illustrating a method for manufacturing a semiconductor device according to a twelfth embodiment of the present invention.
  • FIG. 45 is a plan view depicting one example of a package configuration of a semiconductor device according to a thirteenth embodiment of the present invention.
  • FIG. 46 is a cross-sectional view taken along line F-F of FIG. 45 ;
  • FIG. 47 is an overall plan view showing the surface side of the semiconductor device shown in FIG. 45 ;
  • FIG. 48 is a plan view illustrating one example of a package configuration of a semiconductor device according to a fourteenth embodiment of the present invention.
  • FIG. 49 is a cross-sectional view taken along line G-G of FIG. 48 ;
  • FIG. 50 is an overall plan view showing the surface side of the semiconductor device shown in FIG. 48 ;
  • FIG. 51 is a plan view illustrating one example of a package configuration of a semiconductor device according to a fifteenth embodiment of the present invention.
  • FIG. 52 is a cross-sectional view taken along line H-H of FIG. 51 ;
  • FIG. 53 is an overall plan view showing the surface side of the semiconductor device shown in FIG. 51 ;
  • FIG. 54 is a diagram for describing one example of a circuit configuration of a semiconductor device of the present invention.
  • a semiconductor device is of, for example, a non-insulated type DC-DC converter employed in a power supply circuit for a disk top type personal computer, a notebook-size personal computer, a server or a game machine or the like.
  • FIG. 1 shows a circuit diagram of one example of the non-insulated type DC-DC converter.
  • the non-insulated type DC-DC converter has elements like a control circuit 2 , driver circuits 3 a and 3 b , field effect transistors (power MOS•FETs) Q 1 and Q 2 , a coil L 1 , a condenser or capacitor C 1 , etc. These elements are mounted on a wiring board and electrically connected to one another through wirings of the wiring board.
  • Symbols ET 1 , ET 2 and ET 3 indicate terminals respectively. As shown in FIG. 54 , such a non-insulated type DC-DC converter 1 is placed so as to be parallel-connected in plural form with respect to one CPU.
  • CPU Central Processing Unit
  • DSP Digital Signal Processor
  • the control circuit 2 is a circuit which supplies a signal that controls a width (on time) for voltage switch-on of each of the field effect transistors Q 1 (first field effect transistor) and Q 2 (second field effect transistor).
  • the control circuit 2 is packaged aside from the first field effect transistor Q 1 , the second field effect transistor Q 2 , and the driver circuits 3 a and 3 b .
  • the output of the control circuit 2 is electrically connected to its corresponding inputs of the driver circuits 3 a (hereinafter also called first control circuit) and 3 b (hereinafter also called second control circuit).
  • the first control circuit 3 a and the second control circuit 3 b are circuits which respectively control the gates of the first and second field effect transistors Q 1 and Q 2 in accordance with the control signal supplied from the control circuit 2 .
  • the first and second control circuits 3 a and 3 b are respectively formed of, for example, a CMOS inverter circuit.
  • FIG. 2 One example of a circuit diagram of the first control circuit 3 a is shown in FIG. 2 .
  • the first control circuit 3 a has a circuit configuration in which a p channel type field effect transistor Q 3 and an n channel type field effect transistor Q 4 are complementarily connected in series.
  • symbols D, G and S in FIG. 2 respectively indicate a drain, a gate and a source.
  • the control circuit 3 a is controlled based on a control signal IN 1 and controls the level of an output OUT 1 through the field effect transistor Q 1 .
  • the inputs (IN 1 ) of first and second control circuits 3 a and 3 b are electrically connected to their corresponding terminals (signal terminals) supplied with a control signal from the corresponding control circuit 2 .
  • the outputs of the first and second control circuits 3 a and 3 b are respectively electrically connected to the gates of first and second field effect transistors Q 1 and Q 2 .
  • the first and second field effect transistors Q 1 and Q 2 are series-connected between a terminal ET 1 (first power or power supply terminal) supplied with an input power supply potential Vin and a terminal ET 4 (second power or power supply terminal) supplied with a reference potential GND.
  • the input power supply potential Vin ranges from approximately 5 to 12V, for example.
  • the reference potential GND is, for example, a power supply or source potential lower than the input power supply potential, e.g., 0 (zero) V corresponding to a ground potential.
  • An operating frequency (corresponding to a cycle taken when the first and second field effect transistors Q 1 and Q 2 are turned on and off) of the non-insulated type DC-DC converter 1 is about 1 MHz or so, for example.
  • the first field effect transistor Q 1 is intended for a high side switch (high potential side: first operating voltage) and has a switch function for storing energy in the coil L 1 for supplying power to an output Vout (input of load circuit 4 ) of the non-insulated type DC-DC converter 1 .
  • the first field effect transistor Q 1 is formed of a vertical field effect transistor in which a channel is formed in the direction of thickness of a chip. According to the discussions of the present inventors, in the field effect transistor Q 1 for the high side switch, switching losses (turn-on loss and turn-off loss) comes into sight in a large way due to a parasitic capacitance added thereto as the operating frequency of the non-insulated type DC-DC converter 1 becomes high.
  • a horizontal field effect transistor in which a channel is formed in the surface (direction normal to the chip's thickness direction) of the chip is applied as the field effect transistor for the high side switch in consideration of the switching losses.
  • a parasitic capacitance (gate parasitic capacitance) applied between the gate and drain can be reduced since the horizontal field effect transistor is smaller than the vertical field effect transistor in terms of an area at which a gate electrode and a drain region overlap.
  • the second field effect transistor Q 2 is of a field effect transistor for a low side switch (low potential side: second operating voltage) and also serves as a rectifying transistor of the non-insulated type DC-DC converter 1 .
  • the second field effect transistor Q 2 has the function of reducing the resistance of the transistor in sync with a frequency sent from the control circuit 2 to perform rectification.
  • the second field effect transistor Q 2 is formed of a vertical field effect transistor in which a channel is formed in the direction of thickness of the chip, in a manner similar to the first field effect transistor Q 1 .
  • An output terminal ET 5 for supplying an output power supply potential to the outside is provided between wirings for connecting the source of the first field effect transistor Q 1 and the drain of the second field effect transistor Q 2 .
  • An output wiring is electrically connected to the output terminal ET 5 .
  • the coil L 1 is electrically connected to the output wiring.
  • the condenser C 1 is electrically connected between the output wiring and a terminal for supply of the reference potential GND.
  • the first and second field effect transistors Q 1 and Q 2 are alternately turned on and off while being kept synchronized with each other to thereby perform conversion of the power supply voltage. That is, when the first field effect transistor Q 1 for the high side switch is turned on, a current (first current) 11 flows from the first power supply terminal electrically connected to the drain of the first field effect transistor Q 1 to the output terminal via the first field effect transistor Q 1 . When the first field effect transistor Q 1 for the high side switch is turned off, a current 12 flows due to a back electromotive voltage of the coil L 1 . Turning on the second field effect transistor Q 2 for the low side switch when the current 12 is flowing, makes it possible to reduce a voltage drop.
  • Ton indicates a pulse width at the turning-on of the first field effect transistor Q 1 for the high side switch
  • T indicates a pulse cycle.
  • the current 11 is a large current of about 20 A, for example.
  • the required drive current of the non-insulated type DC-DC converter 1 has also been increased in recent years with an increase in drive current of the load circuit 4 .
  • the required operating frequency of the non-insulated DC-DC converter 1 has also been increased to supply a low voltage stably.
  • FIG. 4 is an equivalent circuit diagram showing inductance components parasitized on the non-insulated type DC-DC converter 50 .
  • LdH, LgH, LsH, LdL, LgL and LsL respectively indicate inductances parasitized on packages of the first and second field effect transistors Q 1 and Q 2 and wirings or the like of a printed wiring board.
  • VgH indicates a gate voltage for turning on the first field effect transistor Q 1
  • VgL indicates a gate voltage for turning on the second field effect transistor Q 2 .
  • a turn-on loss and a turn-off loss (turn-on loss in particular) of the first field effect transistor Q 1 for the high side switch become large significantly, so that the efficiency of voltage conversion of the non-insulated type DC-DC converter 50 is degraded.
  • the turn-on loss and the turn-off loss are proportional to the frequency and output current, loss components become large with the progress of the increases in current and frequency of the non-insulated type DC-DC converter 50 as described above.
  • FIG. 5 is a diagram for describing a circuit operation of a non-insulated type DC-DC converter 50
  • FIG. 6 is a diagram for describing a device section at the circuit operation of FIG. 5 , respectively.
  • the gate voltage of the first field effect transistor Q 1 is supplied from a driver circuit 3 a with the point A as the reference, the voltage applied between a gate region G 1 and the source region SR 1 of the first field effect transistor Q 1 for the high side switch becomes lower than a gate voltage VgH.
  • a channel resistance R 1 of the first field effect transistor Q 1 for the high side switch is not sufficiently lowered, the loss of the current 11 occurs. That is, the turn-on time becomes long.
  • the reason why the turn-on loss and turn-off loss increase with the increase in power and frequency as described above, is that the back electromotive force (LsH ⁇ di/dt) increases with the increase in power and frequency.
  • the first field effect transistor Q 1 for the high side switch has a switch function for storing energy in the coil L 1 that supplies power to the output (input of load circuit 4 ) of the non-insulated type DC-DC converter 1 , the speeding up of a switching operation is required upon the increase in frequency. Since, however, the parasitic inductance LgH occurs between the first control circuit 3 a and the first field effect transistor Q 1 , the switching operation becomes slow. That is, a switching loss is produced so that the efficiency of voltage conversion is degraded.
  • the second field effect transistor Q 2 for the low side switch is configured so as not to produce such a switching loss as mentioned above. That is, when the first field effect transistor Q 1 for the high side switch is turned off, a current (second current) I 21 flows from a reference potential GND to a drain region DR 2 of the second field effect transistor Q 2 through a parasitic diode D 2 connected in parallel to the second field effect transistor Q 2 for the low side switch.
  • a current (third current) I 22 flows from a source region SR 2 of the second field effect transistor Q 2 to the drain region DR 2 through a channel region of the second field effect transistor Q 2 .
  • the current I 21 has already flown before its current flow, and the amount of change in current per unit time at the time that the current I 22 flows, is small. This is because a back electromotive force produced due to a parasitic inductance LsL is negligibly small and does not lead to a substantial loss.
  • the parasitic diode D 1 exists even in the first field effect transistor Q 1 for the high side switch in a manner similar to above.
  • the parasitic diodes D 1 and D 2 have anodes formed over their corresponding source SR 1 and SR 2 sides of the first and second field effect transistors Q 1 and Q 2 respectively and have cathodes formed over their corresponding drain region DR 1 and DR 2 sides of the first and second field effect transistors Q 1 and Q 2 respectively.
  • the first field effect transistor Q 1 for the high side switch is not formed in the same direction (forward direction) as the current (first current) that flows from the drain region DR 1 of the first field effect transistor Q 1 to the source region SR 1 thereof.
  • the amount of change in current per unit time is not reduced, so that a switching loss is produced.
  • the second field effect transistor Q 2 is of a rectifying transistor of the non-insulated type DC-DC converter 1 and has the function of lowering the resistance thereof in sync with the frequency sent from the control circuit 2 . Therefore, a loss produced due to the on resistance, rather than the switching loss becomes remarkable since the on time of the second field effect transistor Q 2 is longer than that of the first field effect transistor Q 1 . Thus, there is a need to reduce the on resistance. Since, however, the parasitic inductance LsL occurs between the second field effect transistor Q 2 and a terminal (second power supply terminal) supplied with a reference potential GND, the on resistance increases and the efficiency of current conversion is degraded.
  • the second field effect transistor Q 2 for the low side switch is formed in another semiconductor chip (second semiconductor chip) 5 b different from a semiconductor chip (first semiconductor chip) 5 a formed with the first field effect transistor Q 1 for the high side switch as shown in FIG. 7 in the first embodiment.
  • the driver circuits (first and second control circuits) 3 a and 3 b are alternately operated in sync with each other, the first and second control circuits 3 a and 3 b are formed in the same semiconductor chip (third semiconductor chip) 5 c in terms of stability of the whole circuit operation.
  • Those semiconductor chips 5 a , 5 b and 5 c are resin-encapsulated or molded in the same package 6 a .
  • wiring inductances can be reduced.
  • the non-insulated type DC-DC converter 1 can be small-sized. If attention is paid to the wiring inductance alone here, then the first field effect transistors Q 1 for the high side switch and the second field effect transistor Q 2 for the low side switch may also preferably be formed in the semiconductor chip 5 c .
  • a manufacturing process becomes complex and their element characteristics are not brought out sufficiently. Therefore, a problem also arises in that time is taken for their manufacture and the cost increases.
  • the second field effect transistor Q 2 for the low side switch Since the second field effect transistor Q 2 for the low side switch is longer in on time than the first field effect transistor Q 1 for the high side switch, the second field effect transistor Q 2 is easy to generate heat. Thus, there is also a fear that if the second field effect transistor Q 2 for the low side switch is formed in the same semiconductor chip as the first field effect transistor Q 1 for the high side switch, heat generated at the operation of the second field effect transistor Q 2 for the low side switch exerts an adverse effect on the first field effect transistor Q 1 for the high side switch through a semiconductor substrate.
  • the semiconductor chip 5 a formed with the first field effect transistor Q 1 for the high side switch, the semiconductor chip 5 b formed with the second field effect transistor Q 2 for the low side switch, and the semiconductor chip 5 c formed with the first and second control circuits 3 a and 3 b are formed in their corresponding discrete semiconductor chips in parts.
  • the manufacturing process of the non-insulated type DC-DC converter 1 can be facilitated as compared with the case in which the first field effect transistor Q 1 for the high side switch, the second field effect transistor Q 2 for the low side switch and the first and second control circuits 3 a and 3 b are formed in the same semiconductor chip. It is therefore possible to bring out the element characteristics sufficiently.
  • the time required to manufacture the non-insulated type DC-DC converter 1 can be shortened and the cost for its manufacture can be reduced. Since the first field effect transistor Q 1 for the high side switch and the first and second control circuits 3 a and 3 b can be prevented from being adversely affected by the heat generated at the operation of the second field effect transistor Q 2 for the low side switch, the stability of operation of the non-insulated type DC-DC converter 1 can be improved.
  • the present inventors have found out that the parasitic inductances cannot be sufficiently reduced by merely placing the three semiconductor chips 5 a , 5 b and 5 c in their corresponding die pads 7 a 1 , 7 a 2 and 7 a 3 and resin-encapsulating them in the same package 6 a to improve the efficiency of voltage conversion.
  • a specific configurational example of the non-insulated type DC-DC converter 1 according to the first embodiment shown in FIG. 7 will be explained with reference to FIGS. 8 through 20 .
  • FIG. 8 is a plan view showing a configurational example of the package 6 a including some circuits of the non-insulated type DC-DC converter 1
  • FIG. 9 is a cross-sectional view taken along line Y 1 -Y 1 of FIG. 8
  • FIG. 10 is an assembly flow diagram showing a method for manufacturing the semiconductor device shown in FIG. 8
  • FIG. 11 is a plan view showing a unit area of a lead frame
  • FIG. 12 is a plan view showing the back surface of the lead frame shown in FIG. 11
  • FIG. 13 is a plan view of the unit area of the lead frame, showing one example of an assembled state associated with a die bonding step of the assembly flow diagram shown in FIG. 10
  • FIG. 10 is an assembly flow diagram showing a method for manufacturing the semiconductor device shown in FIG. 8
  • FIG. 11 is a plan view showing a unit area of a lead frame
  • FIG. 12 is a plan view showing the back surface of the lead frame shown in FIG. 11
  • FIG. 13 is a plan view of the unit area
  • FIG. 14 is a plan view of the unit area of the lead frame, showing one example of an assembled state associated with a wire bonding step of the assembly flow diagram shown in FIG. 10 , respectively.
  • FIG. 15 is an enlarged plan view showing the semiconductor chip 5 a shown in FIG. 8
  • FIG. 16 is a cross-sectional view taken along line B-B of FIG. 15
  • FIG. 17 is a fragmentary enlarged cross-sectional view of the semiconductor chip 5 b shown in FIG. 8
  • FIG. 18 is a cross-sectional view taken along line C-C of FIG. 15
  • FIG. 19 is an enlarged plan view of the semiconductor chip 5 b
  • FIG. 20 is an output-stage circuit configurational view of the semiconductor chip 5 c of FIG. 8
  • FIG. 21 is a fragmentary cross-sectional view of the semiconductor chip 5 c shown in FIG. 8 , respectively.
  • FIG. 8 is shown excepting the semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and a resin molding or encapsulation body 8 on each lead 7 b to make it easy to see the drawings. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 , and leads 7 b are given hatching.
  • the package 6 a according to the first embodiment is set to, for example, a QFN (Quad Flat Non-leaded package) configuration.
  • the package is not limited to the QFN but can be changed in various ways.
  • the package may be set as flat package configurations like, for example, a QFP (Quad Flat Package), an SOP (Small Out line Package), etc.
  • the package 6 a has three die pads (chip mounting members) 7 a 1 , 7 a 2 and 7 a 3 , a plurality of leads (external terminals and inner leads) 7 b 1 , 7 b 2 , 7 b 3 and 7 b 4 , bonding wires (hereinafter simply called wires) WR, and an encapsulating member (resin encapsulation body) 8 .
  • the die pad (first tab and first chip mounting section) 7 a 1 , the die pad (second tab and second chip mounting section) 7 a 2 , the die pad (third tab and third chip mounting section) 7 a 3 and the plural leads 7 b ( 7 b 1 , 7 b 2 , 7 b 3 and 7 b 4 ) are respectively formed of a metal such as an alloy.
  • the wires WR is made up of, for example, gold (Au) or the like.
  • the encapsulating member is formed of, for example, an epoxy resin.
  • the die pads 7 a 1 , 7 a 2 and 7 a 3 are respectively rectangular in shape and placed at predetermined intervals, and constitute lead frames together with the plurality of leads 7 b .
  • the semiconductor chip 5 a is placed (mounted) over the upper left die pad 7 a 1 of FIG. 8 so as to approach one side of the die pad 7 a 1 adjacent to one side the die pad 7 a 2 in a state in which the main surface of the semiconductor chip 5 a is being turned up.
  • the first field effect transistor Q 1 for the high side switch is formed in the main surface of the semiconductor chip 5 a as described above.
  • a plurality of bonding pads (hereinafter simply called pads) BP are disposed in the main surface of the semiconductor chip 5 a as external terminals that draw or take out electrodes for various circuits. Placing the semiconductor chip 5 a so as to approach the die pad 7 a 2 in this way makes it possible to reduce the parasitic impedance LsH produced between the source of the first field effect transistor Q 1 and the drain of the second field effect transistor Q 2 .
  • the semiconductor chip 5 b is placed over the relatively largest die pad 7 a 2 on the lower side of FIG.
  • the second field effect transistor Q 2 for the low side switch is formed over the main surface of the semiconductor chip 5 b as described above.
  • a plurality of electrode pads BP are disposed over the main surface of the semiconductor chip 5 b as external terminals that take out electrodes for various circuits. Placing the semiconductor chip 5 b so as to approach the corner of the second power supply terminal in this way makes it possible to shorten a wiring length of each wire WR formed between the source of the second field effect transistor Q 2 and the second power supply terminal.
  • the semiconductor chip 5 c is disposed over the upper right die pad 7 a 3 of FIG. 8 in such a manner that the distance between the semiconductor chip 5 c and the semiconductor chip 5 a becomes shorter than the distance between the semiconductor chip 5 c and the semiconductor chip 5 b in a state in which its main surface is being turned up.
  • the first and second control circuits 3 a and 3 b are formed over the main surface of the semiconductor chip 5 c as described above.
  • a plurality of electrode pads BP are disposed over the main surface of the semiconductor chip 5 c as external terminals that take out or draw electrodes for various circuits.
  • the semiconductor chips 5 a , 5 b and 5 c are respectively different in outer size (area) from the difference in characteristic.
  • the outer size of the semiconductor chip 5 a is formed larger than that of the semiconductor chip 5 c
  • the outer size of the semiconductor chip 5 b is formed larger than that of the semiconductor chip 5 a .
  • the plurality of electrode pads BP are respectively formed of, for example, a metal like aluminum or the like.
  • the semiconductor chip 5 c has first and second control circuits 3 a and 3 b .
  • the outer size of each element may preferably be set as small as possible in consideration of the size of the whole package.
  • an on resistance developed in each transistor may preferably be reduced as much as possible. In order to reduce the on resistance, its reduction can be realized by extending a channel width per unit cell area.
  • the outer sizes of the semiconductor chips 5 a and 5 b are formed larger than the outer size of the semiconductor chip 5 c . Further, as shown in FIG.
  • the second field effect transistor Q 2 for the low side switch is longer in on time than the first field effect transistor for the high side switch. Therefore, there is a need to further reduce the on resistance of the second field effect transistor Q 2 for the low side switch as compared with the on resistance of the first field effect transistor Q 1 for the high side switch.
  • the outer size of the semiconductor chip 5 b is formed larger than the outer size of the semiconductor chip 5 a.
  • the electrode pads BP of the semiconductor chips 5 a , 5 b and 5 c are electrically connected to their corresponding parts through the wires WR.
  • the corresponding source electrode pad BP 1 connected to the source of the first field effect transistor Q 1 of the semiconductor chip 5 a is electrically connected to the die pad 7 a 1 through plural wires WR and electrically connected to the electrode pad BP 2 electrically connected to the source of the first field effect transistor Q 1 , of the plurality of electrode pads BP of the semiconductor chip 5 c .
  • the gate electrode pad BP 3 connected to the gate of the first field effect transistor Q 1 of the semiconductor chip 5 a is electrically connected to its corresponding electrode pad BP 4 electrically connected to the gate of the first field effect transistor Q 1 , of the plural electrode pads BP of the semiconductor chip 5 c through plural wires WR.
  • the source electrode pad BP 5 connected to the source of the second field effect transistor Q 2 of the semiconductor chip 5 b is electrically connected to plural leads (second power supply terminal) 7 b 2 through plural wires WR and electrically connected to the electrode pad BP 6 electrically connected to the source of the second field effect transistor Q 2 , of the plurality of electrode pads BP of the semiconductor chip 5 c .
  • the gate electrode pad BP 7 connected to the gate of the second field effect transistor Q 2 of the semiconductor chip 5 b is electrically connected to its corresponding electrode pad BP 8 electrically connected to the gate of the second field effect transistor Q 2 , of the plural electrode pads BP of the semiconductor chip 5 c .
  • the plural leads 7 b 2 are supplied with the reference potential GND through the terminal ET 4 .
  • the respective back surfaces of the semiconductor chips 5 a and 5 b are configured as drain electrodes connected to the drains of the first and second field effect transistors and electrically connected to the die pads 7 a 1 and 7 a 2 .
  • the die pad 7 a 1 is electrically connected to the leads 7 b 1 formed integrally with it.
  • the leads 7 b 1 are electrically connected to their corresponding terminal ET 1 supplied with an input power supply potential Vin.
  • the die pad 7 a 2 is electrically connected to leads 7 b 3 formed integrally with it.
  • the leads 7 b 3 is electrically connected to their corresponding output terminal ET 5 that supplies an output power supply potential to the outside.
  • the coil L 1 is electrically connected to the terminal ET 5 .
  • ultrasonic thermocompression bonding is used in wire bonding for the wires WR.
  • the wiring bonding is made in avoidance of a half etch area as shown in FIG. 9 . It is thus possible to suppress the bonding failure.
  • the back surfaces (surfaces on the sides opposite to the chip mounting sections) of the die pads 7 a 1 , 7 a 2 and 7 a 3 and some of the plural leads 7 b are exposed to the outside.
  • Heat generated when the semiconductor chips 5 a , 5 b and 5 c are operated, is radiated from the back surfaces of the semiconductor chips 5 a , 5 b and 5 c to the outside through the die pads 7 a 1 , 7 a 2 and 7 a 3 as viewed from their back surface sides.
  • the respective die pads 7 a 1 , 7 a 2 and 7 a 3 are formed larger than the areas of the semiconductor chips 5 a , 5 b and 5 c . It is thus possible to improve dissipation of the non-insulated type DC-DC converter 1 .
  • the back surfaces (surfaces on the sides opposite to the surfaces over which the semiconductor chips 5 a , 5 b and 5 c are mounted) of the die pads 7 a 1 , 7 a 2 and 7 a 3 , and the back surfaces (surfaces on the sides opposite to the surfaces to which the wires WR are connected, and joint surfaces bonded to terminals of a wiring board) of the leads 7 b also exist in the mounting surface (surface opposite to the wiring board when the package 6 a is mounted over the wiring board) of the package 6 a in such a structure.
  • a method for manufacturing the semiconductor device according to the first embodiment will next be described using the assembly flow diagram shown in FIG. 10 .
  • a dicing tape is bonded onto a back surface of a semiconductor wafer.
  • the semiconductor wafer is brought into fractionization by a dicing blade to divide it into individual semiconductor chips 5 a , 5 b and 5 c.
  • a lead frame 10 is prepared which has die pads 7 a 1 , 7 a 2 and 7 a 3 over which such semiconductor chips 5 a , 5 b and 5 c as shown in FIGS. 11 and 12 are mountable, and a plurality of leads 7 b placed therearound, and in which peripheral portions of the back surfaces of the die pads 7 a 1 , 7 a 2 and 7 a 3 are formed thin by half etching processing or the like.
  • the semiconductor chips 5 a , 5 b and 5 c are fixedly secured to the surface sides of the die pads 7 a 1 , 7 a 2 and 7 a 3 of the lead frame through a die bond material.
  • wires WR 1 and WR 2 which are 50 ⁇ m in thickness, for example and which electrically connect the electrodes of the semiconductor chips 5 a and 5 b and respective parts (leads and chip mounting sections) associated with the electrodes respectively, and wires WR 3 which are 30 ⁇ m in thickness, for example and electrically connect the semiconductor chip 5 c and its corresponding respective parts (leads and chip's electrodes) respectively.
  • the semiconductor chips 5 a , 5 b and 5 c and their corresponding respective parts are connected (crimped) using wires (metal thin lines) WR such as a gold line by an ultrasonic wave.
  • a resin encapsulating (mold) step is performed.
  • an encapsulating or sealing tape is first disposed over the surface of a lower mold of a resin-molded die as shown in FIG. 10 .
  • the lead frame 10 is placed over the sealing tape and thereafter the resin-molded die is clamped in such a manner that some of the plural leads 7 b and the die pads 7 a 1 , 7 a 2 and 7 a 3 are adhered onto the sealing tape.
  • one having high viscosity greater than or equal to, for example, 0.5N as the adhesive strength or force of the sealing tape is used as the sealing tape.
  • an encapsulating resin is injected into an upper mold (cavity), and the semiconductor chips 5 a , 5 b and 5 c and the plurality of wires WR are resin-sealed in such a manner that some of the die pads 7 a 1 , 7 a 2 and 7 a 3 and some of the plurality of leads 7 b are exposed from a resin encapsulation body 8 (sealing member) to thereby form the resin encapsulation body 8 (mold step).
  • implanted sealing resin is cured (resin cure step). After execution of a mark step, product parts are divided from the lead frame 10 .
  • the sealing tape is bonded to the back surface of the lead frame 10 prior to the resin sealing step in the assembly flow diagram shown in FIG. 10 . This is done to prevent that in the resin sealing step of one having such a configuration that the plurality of die pads 7 a 1 , 7 a 2 and 7 a 3 are provided within one package 6 a as in the first embodiment, the leakage of a resin is apt to occur in an intersecting portion Z of slits that form a boundary among the three die pads 7 a 1 , 7 a 2 and 7 a 3 shown in FIG.
  • the sealing tape is firmly bonded to the back surface sides (including the slits that form the boundary among the three die pads) of the three die pads prior to the sealing step so as not to cause the above resin leakage, thereby preventing the encapsulating resin from leaking to the back surfaces of the die pads 7 a 1 , 7 a 2 and 7 a 3 through the intersecting portion Z or the like. It is therefore possible to prevent a failure in the mounting of the package 6 a due to the resin burrs.
  • sealing tape Since it is preferable to firmly adhere the sealing tape to the die pads 7 a 1 , 7 a 2 and 7 a 3 or the like upon the sealing step as described above, one capable of obtaining a high viscocity strength of, for example, 0.5N or more from such a viewpoint as the adhesive strength or force of the sealing tape is preferable as the sealing tape.
  • the lead frame 10 given Pd (palladium) plating has the advantage that the use of lead-free solder can be realized and good in environment upon mounting the package 6 a to the wiring board, and while the commonly-used lead frame needs to apply silver (Ag) paste onto wire bonding portions of the lead frame for the purpose of wiring bonding in advance, the present lead frame 10 has the advantage that wires can be connected even if such Ag paste is not applied. Since, however, a problem about the failure in packaging due to the above resin burrs arises even in the case of the Pd-plated lead frame 10 , the removal of the resin burrs by a cleaning process or the like is carried out where the resin burrs are formed.
  • the Pd-plated lead frame 10 is accompanied by a problem in that since the lead frame 10 is given plating prior to the resin sealing step to reduce the number of manufacturing process steps, the pre-plated Pd plating film is also peeled off when an attempt to peel away the resin burrs by the cleaning process or the like is made. That is, there is a possibility that the Pd-plated lead frame 10 cannot be used.
  • the first embodiment can prevent the formation of the resin burrs as described above and may not use a powerful cleaning process after the sealing step. Therefore, the Pd-plated lead frame 10 having the satisfactory effect referred to above can be used.
  • the lead frame 10 having such a unit area as shown in FIGS. 11 and 12 is used in the first embodiment.
  • the die pads 7 a 1 , 7 a 2 and 7 a 3 are respectively rectangular in shape and placed at predetermined intervals.
  • the die pad 7 a 1 is electrically connected to its corresponding leads 7 b 1 formed integrally with it.
  • the leads 7 b 1 are electrically connected to their corresponding terminal ET 1 (first power supply terminal and first source or power supply potential) supplied with an input power supply potential Vin.
  • the die pad 7 a 2 is electrically connected to its corresponding leads 7 b 3 formed integrally with it.
  • the leads 7 b 3 are electrically connected to their corresponding output terminal ET 5 (second power supply terminal and second source or power supply potential) that supplies an output power supply potential to the outside.
  • a plurality of leads (second power supply terminal) 7 b 2 are formed so as to be connected in an L-shaped fashion along the periphery of the resin encapsulation body 8 .
  • a reference potential GND can be enhanced or stepped up.
  • a half etch area 11 is formed around the back surfaces of the die pads 7 a 1 , 7 a 2 and 7 a 3 as shown in FIG. 12 .
  • Forming the half etch area 11 makes it possible to strengthen adhesion between the lead frame 10 and the resin encapsulation body 8 . That is, it is possible to suppress or prevent lead omission.
  • the thickness of the lead frame is also getting thin with a demand for a reduction in thickness and weight of a semiconductor device.
  • the leads 7 b are thin as compared with other portions and their leading ends are in a floating state without being connected to other portions. Therefore, the lead portions might be deformed or peeled where resin encapsulation is carried out without execution of any means.
  • the outer peripheral portions of the back surfaces of the leads 7 b on the leading end sides thereof are also half-etched to form steps at the outer peripheries of the back surfaces of the leads 7 b on their leading end sides.
  • the encapsulating resin flows into the half-etched portions upon the sealing step and then covers the half-etched portions and holds down the tip outer peripheral portions of the leads 7 b . It is therefore possible to suppress or prevent deformation and peeling of the leads 7 b.
  • the die bonding step shown in FIG. 10 will be explained with reference to FIG. 13 using the lead frame 10 .
  • a semiconductor chip 5 c is first die-bonded to its corresponding die pad 7 a 3 .
  • a semiconductor chip 5 a is disposed in its corresponding die pad 7 a 1 .
  • a semiconductor chip 5 b is placed in its corresponding die pad 7 a 3 . Mounting the semiconductor chips 5 a , 5 b and 5 c small in outer size to the die pads 7 a 3 , 7 a 1 and 7 a 2 in that order in this way enables an improvement in productivity.
  • solder paste is used to dispose the semiconductor chips 5 a , 5 b and 5 c in the die pads 7 a 1 , 7 a 2 and 7 a 3 respectively, it is omitted to make it easy to see the drawings.
  • the wire bonding step shown in FIG. 10 will next be described with reference to FIG. 14 .
  • the semiconductor chip 5 a and the die pad 7 a 2 are first electrically connected by a plurality of wires WR 1 (first wire).
  • the semiconductor chip 5 b and the leads 7 b 2 (second power supply terminal) are electrically connected by a plurality of wires WR 2 (second wire).
  • the semiconductor chip 5 c and its associated parts are electrically connected by a plurality of wires WR 3 (third wire).
  • the wires WR 1 , WR 2 and WR 3 are respectively formed of, for example, gold (Au) or the like.
  • the wires WR 1 and WR 2 are 50 ⁇ m in thickness, for example.
  • the thickness of each wire WR 3 is 30 ⁇ m, for example.
  • the first embodiment provides a reduction in parasitic inductance LsH produced between the semiconductor chip 5 a and the output terminal and a reduction in parasitic inductance LsL produced between the semiconductor chip 5 b and each lead 7 b 2 (second power supply terminal) for the purpose of its attainment.
  • the plural wires WR 1 thicker than the wires WR 3 are arranged to electrically connect the semiconductor chip 5 a and the die pad 7 a 2 .
  • the plurality of wires WR 2 thicker than the wires WR 3 are arranged to electrically connect the semiconductor chip 5 b and the leads 7 b 2 (second power supply terminal).
  • the wires WR 2 are connected after the connection of the thick wires WR 1 as shown in FIG. 14 , and the thin wires WR 3 are connected after the connection of the wires WR 2 . It is thus possible to suppress breaking of the wires WR 1 , WR 2 and WR 3 .
  • the wires WR 1 and the wires WR 2 are identical in thickness, the wires WR 1 may be connected after the wires WR 2 are previously connected.
  • FIG. 15 is an enlarged plan view of the semiconductor chip 5 a
  • FIG. 16 is a cross-sectional view taken along line B-B of FIG. 15
  • FIG. 17 is a cross-sectional view taken along line C-C of FIG. 15 and is a fragmentary enlarged sectional view of the semiconductor chip 5 a
  • FIG. 18 is a cross-sectional view taken along line C-C of FIG. 15 , respectively.
  • the semiconductor chip 5 a is rectangular in flat shape intersecting its thickness direction and is shaped in the form of, for example, a rectangle in the first embodiment.
  • the semiconductor chip 5 a has, for example, a semiconductor substrate 15 , a plurality of transistor elements formed in a main surface 5 ax (see FIG. 9 and the like) of the semiconductor substrate 15 , a multilayer wiring layer in which an insulating layer 12 and a wiring layer 13 are respectively stacked over the main surface of the semiconductor substrate 15 in plural stages, a surface protection film (final protection film) 14 formed so as to cover the wiring layer 13 , etc.
  • the wiring layer 13 is constituted of a metal material like aluminum (Al), for example.
  • the surface protection film 14 is formed of an organic film like a polyimide film (PiQ), for example.
  • the semiconductor chip 5 a has the main surface (circuit forming surface) 5 ax and a back surface 5 ay both placed on the sides opposite to each other (see FIG. 9 and the like).
  • An integrated circuit is configured on the main surface 5 ax side of the semiconductor chip 5 a .
  • the integrated circuit comprises transistor elements formed in the main surface 5 ax of the semiconductor substrate 15 and wirings formed in the multilayer wiring layer.
  • a plurality of electrode pads (electrodes) BP are formed in the main surface 5 ax of the semiconductor chip 5 a .
  • the plural electrode pads BP include source electrode pads BP 1 connected to the source and gate of a first field effect transistor Q 1 , and a gate electrode pad BP 3 . They are exposed through bonding apertures 14 formed in the wiring layer 13 corresponding to a top layer of the multilayer wiring layer of the semiconductor chip 5 a and formed in the surface protection film 14 of the semiconductor chip 5 a in association with the respective electrode pads BP.
  • each source electrode pad BP 1 is formed along a pair of long sides (X direction) of the semiconductor chip 5 a .
  • the gate electrode pad BP 3 is formed in a position near the center of one of a pair of short sides of the semiconductor chip 5 a . A further description will be made. As shown in FIG. 8 , the gate electrode pad BP 3 is formed in a position near the center of the side closest to the output stage of the first control circuit 3 a of the semiconductor chip 5 c . In the first embodiment, the shape of the gate electrode pad BP 3 is square and 280 ⁇ m, for example.
  • the semiconductor chip 5 a has a gate electrode pattern electrically connected to the gate electrode pad BP 3 .
  • the gate electrode pattern extends from one (side connected to the gate electrode pad BP 3 ) of the pair of short sides of the semiconductor chip 5 a to the other in the X direction and comprises a portion (first wiring and first portion) BP formed between the two source electrode pads BP 1 , and a portion (second wiring and second portion) BP 3 b formed along the periphery of the main surface of the semiconductor chip 5 a .
  • first wiring BP 3 a of the gate electrode pattern an end thereof on the side opposite to one end (side connected to the gate electrode pad BP 3 ) of one pair of short sides is formed so as not to be connected to some of the second wiring BP 3 b .
  • the width of the gate electrode pattern is 25 ⁇ m, for example.
  • the gate electrode pattern is formed of a metal like aluminum (Al), for example.
  • Al metal like aluminum
  • the source electrode pads BP 1 can also be disposed so as to approach the die pad 7 a 2 and along a pair of long sides in addition to the viewpoint that the semiconductor chip 5 a is placed near the die pad 7 a 2 as described above (the long side of the semiconductor chip 5 a is placed in a state of extending along the long side of the die pad 7 a 2 ).
  • the wires WR 1 for electrically connecting the source electrodes BP 1 and the die pad 7 a 2 can be individually formed short in length, and more wires WR 1 can be placed side by side, the parasitic inductance LsH can be reduced.
  • the source region SR 1 of the first field effect transistor Q 1 can be formed without separation. That is, since the source region SR 1 is formed without separation, the on resistance can be reduced.
  • the two types of wires WR are electrically connected to the source electrode pads BP 1 of the semiconductor chip 5 a .
  • the first type corresponds to the wires WR 1 electrically connected to the die pad 7 a 2 .
  • the second type corresponds to wires WR 3 a (WR 3 ) that connect the source of the first field effect transistor Q 1 and the pads BP 2 (BP) electrically connected thereto, of the plurality of electrode pads BP of the semiconductor chip 5 c . That is, the wires WR electrically connected to the source electrode pads BP 1 of the semiconductor chip 5 a are separated into the die pad 7 a 2 side and the first control circuit 3 a side.
  • FIG. 16 is a cross-sectional view taken along line B-B of the semiconductor chip 5 a .
  • the semiconductor substrate 15 of the semiconductor chip 5 a comprises, for example, n + type silicon (Si) monocrystalline.
  • a drain electrode (external terminal) connected to the drain region DR 1 of the first field effect transistor Q 1 is formed in its back surface.
  • the drain electrode is formed by evaporating a metal such as gold (Au) and connected to the die pad 7 a 2 as described above.
  • an epitaxial layer 16 ep formed of, for example, n type silicon monocrystalline is formed in the main surface of the semiconductor substrate 15 .
  • the epitaxial layer 16 ep is formed with an n ⁇ type semiconductor region 17 n 1 , p type semiconductor regions 17 p formed thereover, and n + type semiconductor regions 17 n 2 formed thereover.
  • an n channel type vertical first field effect transistor Q 1 having a trench gate structure is formed in such a semiconductor substrate 15 and an epitaxial layer 16 ep .
  • a wiring layer 13 b for a source region SR 1 and a wiring layer 13 a for a gate region G 1 are formed thereover.
  • a surface protection film 14 for protecting the wiring layers 13 a and 13 b each corresponding to the top layer is formed.
  • a bonding aperture 14 a is defined in the surface protection film 14 , and each source electrode pad (external terminal) BP 1 connected to the source region SR 1 exposed from the bonding aperture 14 a is formed.
  • the gate region G 1 is formed of, for example, polysilicon (poly-Si).
  • the source electrode pad BP 1 is formed by evaporating a metal such as gold (Au) and connected with the wires WR 1 for electrically connecting to the die pad 7 a 2 as described above.
  • the first field effect transistor Q 1 has the n + type semiconductor region 17 n 2 having a function as the source region SR 1 , the n ⁇ type semiconductor region 17 n 1 having a function as the drain region DR 1 , the p type semiconductor region 17 p having a function as a channel forming region CH 1 , a gate insulating film 19 formed over an inner wall of a trench 18 dug or defined in the direction of thickness of the epitaxial layer 16 ep , and a gate region G 1 embedded into the trench 18 through the gate insulating film 19 .
  • the gate region G 1 is electrically connected to the gate electrode pad BP 3 .
  • the unit area of the first field effect transistor Q 1 can be miniaturized or scaled down and brought into high integration.
  • a cap insulating film 20 is formed over the gate region G 1 and insulates the source electrode pad BP 1 and the gate region G 1 from each other.
  • the electrode pad BP 1 is electrically connected even to the p type semiconductor region 17 p for channel formation as well as being connected to the n + type semiconductor region 17 n 2 for the source.
  • the current I 1 at the operation of the first field effect transistor Q 1 flows between the source region SR 1 and the drain region DR 1 along the depth direction of the trench 18 (flows in the direction of thickness of drift layer) and along the side surfaces of the gate insulating film 19 .
  • Such a vertical first field effect transistor Q 1 is large in gate area per unit cell area and large in area of junction of the gate region G 1 and the drift layer of the drain as compared with the horizontal field effect transistor in which the channel is formed in the horizontal direction. Therefore, the parasitic capacitance between the gate and drain becomes large, whereas a channel width per unit cell area can be increased and hence the on resistance can be reduced.
  • the semiconductor chip 5 a is formed by arranging such a field effect transistor as described in FIG. 17 in plural form as shown in FIG. 16 .
  • FIG. 18 is a cross-sectional view taken along line C-C (see FIG. 15 ) of the semiconductor chip 5 a .
  • the semiconductor substrate 15 of the first field effect transistor Q 1 comprises, for example, n + type silicon monocrystalline.
  • An epitaxial layer 16 ep constituted of, for example, n type silicon monocrystalline is formed in the main surface of the semiconductor substrate 15 . Since the epitaxial layer 16 ep is substantially identical in configuration to the above epitaxial layer, the description thereof will be omitted.
  • a p ⁇ type well region PWL is formed over the epitaxial layer 16 ep .
  • a gate region (G-poly) G 1 is formed over the p ⁇ type well region PWL with a field oxide film FLD interposed therebetween.
  • An insulating oxide film (SiO 2 ) 21 is formed in the surface of the gate region G 1 .
  • An aperture 21 a is defined in the insulating oxide film 21 , and a wiring layer 13 a connected to the gate region G 1 is formed through the aperture.
  • the wiring layer 13 a is of a gate electrode pad BP 3 .
  • a gate electrode (external terminal) connected to the gate electrode pad BP 3 is formed.
  • a channel region CH 1 is formed in the side surface of the p-type well region PWL, and a wiring layer 13 b for each source region SR 1 is formed over the channel region CH 1 .
  • the wiring layer 13 b is of a source electrode pad BP 1 .
  • each source electrode (external terminal) ET 5 connected to the source electrode pad BP 1 is formed.
  • the wiring layer 13 a of the gate region G 1 and the wiring layer 13 b of the source region SR 1 are respectively of wiring layers each corresponding to a top layer.
  • the wiring layers 13 a and 13 b are respectively formed of a metal like aluminum (Al), for example.
  • FIG. 19 shows an enlarged plan view of the semiconductor chip 5 b .
  • the semiconductor chip 5 b is substantially identical in device configuration to the semiconductor chip 5 a , the description thereof will be omitted because it has already been described in FIG. 15 .
  • the semiconductor chip 5 b is substantially identical to FIGS. 16 through 18 in device's sectional configuration, the description thereof will be omitted because it has already been described in FIGS. 16 through 18 .
  • the semiconductor chip 5 b has a flat shape intersecting its thickness direction, which is rectangular.
  • the semiconductor chip 5 b is shaped in the form of a rectangle, for example.
  • a pair of long sides of the semiconductor chip 5 b and a pair of short sides thereof are respectively substantially the same size in XY ratio as two sides of plural leads 7 b 2 (second power supply terminal) formed with being connected in an L-shaped fashion (see FIG. 8 ).
  • the semiconductor chip 5 b has a main surface (circuit forming surface) 5 bx and a back surface 5 by located on the sides opposite to each other.
  • An integrated circuit is configured on the main surface 5 bx side of the semiconductor chip 5 b .
  • the integrated circuit is principally configured of transistor elements formed in the main surface 5 bx of the semiconductor substrate, and wirings formed in a multilayer wiring layer.
  • a plurality of pads (electrodes) BP are formed in the main surface 5 bx of the semiconductor chip 5 b .
  • the plural electrode pads BP include source electrode pads BP 5 connected to the source of the second field effect transistor Q 2 for the low side switch and gate electrode pads BP 7 connected to the gate of the second field effect transistor Q 2 . They are exposed through bonding apertures 22 a defined in a wiring layer corresponding to a top layer of the multilayer wiring layer of the semiconductor chip 5 b and defined in a surface protection film 22 of the semiconductor chip 5 b in association with the respective electrode pads BP.
  • the gate electrode pad BP 7 electrically connected to the gate of the second field effect transistor Q 2 , of the plural electrode pads BP of the semiconductor chip 5 b is placed in a position near the corner most adjacent to the semiconductor chip 5 c within the main surface of the semiconductor chip 5 b .
  • the semiconductor chip 5 b has gate electrode patterns electrically connected to the gate electrode pads BP 7 .
  • the gate electrode patterns extend in a Y direction from one (first power supply terminal ET 1 side) of the pair of long sides of the semiconductor chip 5 b to the other (second power supply terminal ET 4 side) thereof.
  • the source electrode pads BP 5 are placed among the plural gate electrode patterns and extend in the Y direction from the other of the pair of long sides of the semiconductor chip 5 b to one thereof. A further description will be made.
  • the gate electrode patterns comprise portions (third wiring and third portion) BP 7 a formed among the source electrode pads BP 5 and portions (fourth wiring and fourth portion) BP 7 b formed along the periphery of the main surface of the semiconductor chip 5 b .
  • the third wiring BP 7 a of each gate electrode pattern the end of the other (second power supply terminal ET 4 side) on the side opposite to a pair of long sides thereof is formed so as not to be connected to part of the fourth wiring BP 7 b .
  • the width of each gate electrode pattern is 25 ⁇ m, for example.
  • the gate electrode pattern is constituted of a metal like aluminum (Al), for example.
  • the source electrode pads BP 5 and the plural leads (second power supply terminal) 7 b 2 are electrically connected by a plurality of wires WR 2 .
  • a current supplied from the second control circuit 3 b flows to the second power supply terminal through the gate of the second field effect transistor Q 2 . Therefore, when the gate electrode patterns are formed in the X direction from one of the pair of short sides to the other thereof, paths for the current flowing toward the plural leads 7 b 2 placed along the long side are cut off or blocked. On the other hand, since the gate electrode patterns are formed so as to extend from one of the pair of long sides to the other thereof in the first embodiment, their current paths can be ensured. It is therefore possible to suppress degradation of the efficiency of voltage conversion. Extensively forming the source electrode pads BP 5 over the semiconductor chip 5 b as shown in FIG.
  • a phenomenon occurs wherein when the first field effect transistor Q 1 for the high side switch is switched to the second field effect transistor Q 2 for the low side switch, a current (through current) flows from the first power supply terminal ET 1 to the second power supply terminal. Therefore, in the first embodiment, a threshold voltage VthH of the second field effect transistor Q 2 for the low side switch is controlled by a value higher than a threshold voltage VthL of the first field effect transistor Q 1 for the high side switch. Consequently, the path for the through current can be cut off. That is, the self turn-on can be suppressed.
  • FIG. 20 is a circuit configurational diagram showing control circuits of the semiconductor device according to the first embodiment
  • FIG. 21 is a cross-sectional view showing the corresponding control circuit of the semiconductor device shown in FIG. 20 .
  • the semiconductor chip 5 c has first and second control circuits 3 a and 3 b .
  • the first control circuit 3 a is of a circuit which controls the gate of the first field effect transistor Q 1 for the high side switch.
  • the first control circuit 3 a comprises a plurality of field effect transistors M 1 , M 2 , M 3 and M 4 .
  • a section which controls the gate of the first field effect transistor Q 1 for the high side switch corresponds to the field effect transistors M 1 and M 2 equivalent to an output stage.
  • the gate of the field effect transistor Q 1 for the high side switch is controlled by signals outputted from the field effect transistors M 1 and M 2 .
  • the section is supplied with a potential from the corresponding terminal (VCIN) ET 2 that inputs a gate control voltage for the first field effect transistor Q 1 electrically connected to the drain of the field effect transistor M 1 of the output stage, and outputs a control signal.
  • a terminal ET 6 for a bootstrap circuit, for controlling the gate of the first field effect transistor Q 1 is connected to the drain of the field effect transistor M 1 . Since the potential of the source of the first field effect transistor Q 1 is a value (floating) higher than the reference potential GND, the voltage is supplied from the terminal ET 6 with respect to its voltage.
  • the first embodiment has been explained using the four field effect transistors M 1 , M 2 , M 3 and M 4 , the present invention is not limited to it. Further, a plurality of field effect transistors may be provided in the present embodiment.
  • the second control circuit 3 b is of a circuit for controlling the gate of the second field effect transistor Q 2 for the low side switch and comprises plural field effect transistors M 5 and M 6 .
  • the drain of the field effect transistor M 5 is supplied with a potential from its corresponding terminal (VLDRV) ET 3 that inputs a gate control voltage for the second field effect transistor Q 2 , so that a control signal is outputted.
  • the second control circuit 3 b is substantially identical to the first control circuit 3 a in circuit operation and the description thereof will therefore be omitted.
  • FIG. 21 shows a device structure of the control circuit described in FIG. 20 .
  • the second control circuit 3 b shown in FIG. 21 is substantially identical to the first control circuit 3 a in device configuration, the first control circuit 3 a is explained here and the description of the second control circuit 3 b is therefore omitted.
  • the first field effect transistor Q 1 is formed with a first control circuit 3 a formed of, for example, a CMOS (Complementary MOS) inverter circuit.
  • the first control circuit 3 a is formed of a p channel type horizontal third field effect transistor Q 3 (whose channel is formed in the horizontal direction (direction horizontal to the main surface of the semiconductor substrate)) formed in an n well NWL, and an n channel type horizontal fourth field effect transistor Q 4 formed in a p well PWL.
  • the third field effect transistor Q 3 has a source region SR 3 , a drain region DR 3 , a gate insulating film 23 p and a gate region G 3 .
  • the source region SR 3 and the drain region DR 3 respectively have p ⁇ type semiconductor regions 24 a and p + type semiconductor regions 24 b .
  • the fourth field effect transistor Q 4 has a source region SR 4 , a drain region DR 4 , a gate insulating film 23 n and a gate region G 4 .
  • the source region SR 4 and the drain region DR 4 respectively have n ⁇ type semiconductor regions 25 a and n + type semiconductor regions 25 b .
  • the drain regions DR 3 and DR 4 are respectively connected to an output terminal ET 7 and electrically connected to the gate of the first field effect transistor for the high side switch through the output terminal ET 7 .
  • the source region SR 4 is connected to an output terminal ET 8 and electrically connected to the source of the first field effect transistor through the output terminal ET 8 .
  • the semiconductor chip 5 c has a square-shaped main surface and a plurality of pads (electrodes) BP disposed along the sides of the square-shaped main surface.
  • the electrode pads BP of the semiconductor chip 5 c the electrode pads BP 2 , BP 4 , BP 6 and BP 8 respectively electrically connected to the sources and gates of the first and second field effect transistors Q 1 and Q 2 are disposed along the two sides that define the corners of the main surface, most adjacent to the semiconductor chips 5 a and 5 b.
  • the semiconductor chips 5 are disposed in such a manner that the distance between the semiconductor chip 5 c and the semiconductor chip 5 a becomes shorter than the distance between the semiconductor chip 5 c and the semiconductor chip 5 b .
  • the wires WR 3 a and 3 b respectively electrically connected to the source and gate of the first field effect transistor Q 1 are formed shorter than the wires WR 3 c and 3 d respectively electrically connected to the source and gate of the second field effect transistor Q 2 .
  • the second control circuit 3 b is of a circuit that controls the gate of the second field effect transistor Q 2 for the low side switch. Further, the output stage of the second control circuit 3 b comprises plural field effect transistors M 5 and M 6 (fifth and sixth field effect transistors).
  • the fifth field effect transistor M 5 is placed on the side of one of the four sides of the semiconductor chip 5 c , most adjacent to the semiconductor chip 5 b .
  • the source electrode pads BP 9 (BP) connected to the source of the fifth field effect transistor M 5 are placed inside the semiconductor chip 5 c as compared with other electrode pads BP.
  • each wire WR 3 Since the wiring resistance of each wire WR 3 is lower than that of wiring formed within each chip, the source electrode pads BP 9 (BP) connected to the source of the fifth field effect transistor M 5 are formed over the semiconductor chip 5 c .
  • the wires WR 3 are drawn and connected up to the neighborhood of the source of the fifth field effect transistor M 5 so that the parasitic inductances developed in the wiring paths can further be reduced.
  • FIG. 22 is a plan view showing one example of a state of mounting of the package 6 a
  • FIG. 23 is a side view of FIG. 22 , respectively.
  • the wiring board 27 is formed of, for example, a printed wiring board and has a main surface over which packages 6 a , 28 and 29 , and chip parts 30 and 31 are mounted.
  • the control circuit 2 is formed in the package 28 and the load circuit 4 is formed in the package 29 .
  • the coil L 1 is formed as the chip part 30 and the condenser C 1 s formed as each chip part 31 .
  • Leads 28 a of the package 28 are electrically connected to their corresponding leads 7 b ( 7 b 4 ) of the package 6 a through wirings 27 a of the wiring board 27 .
  • Leads 7 b 1 of the package 6 a are electrically connected to a wiring 27 b of the wiring board 27 .
  • Output leads (output terminal) 7 b 3 of the package 6 a are electrically connected to one end of the coil L 1 of the chip part 30 through a wiring (output wiring) 27 c of the wiring board 27 .
  • the other end of the coil L 1 is electrically connected to the load circuit 4 through a wiring (output wiring) 27 d of the wiring board 27 .
  • Leads 7 b 2 for a reference potential GND, of the package 6 a are electrically connected to one ends of the condensers C 1 corresponding to the plural chip parts 31 through a wiring 27 e of the wiring board 27 .
  • the other ends of the condensers C 1 are electrically connected to the load circuit 4 through the wiring 27 d of the wiring board 27 .
  • FIG. 24 is a plan view showing an overall surface of a semiconductor device according to one embodiment of the present invention
  • FIG. 25 is a side view of the semiconductor device shown in FIG. 24
  • FIG. 26 is a plan view showing a back surface of the semiconductor device shown in FIG. 24
  • FIG. 27 is an overall perspective view showing an external appearance of the semiconductor device according to the one embodiment of the present invention, respectively.
  • a resin encapsulation body 8 has a flat shape intersecting its thickness direction, which is rectangular.
  • the resin encapsulation body 8 is shaped in the form of a square identical in shape to the lead frame 10 , for example.
  • the resin encapsulation body 8 is formed of, for example, a biphenyl thermosetting resin added with a phenol curing agent, silicon rubber and filler or the like.
  • a transfer molding method suitable for mass production is used as a method for mass production.
  • the transfer molding method is a method of using a molding die (mold die) provided with a pot, a runner, a resin injection gate and a cavity or the like and injecting a thermosetting resin into the cavity from the pot through the runner and the resin injection gate to thereby form the resin encapsulation body 8 .
  • an individual type transfer molding method for using a multicavity wiring board having a plurality of product forming areas (device forming areas and product acquisition areas) and resin-encapsulating semiconductor chips mounted in the respective product forming areas every product forming areas, or a batch type transfer molding method for using a multicavity wiring board having a plurality of product forming areas and collectively resin-encapsulating semiconductor chips mounted in the respective product forming areas.
  • the individual type transfer molding method is adopted.
  • some of plural leads 7 b are exposed from the side surfaces 8 c and back surface 8 b of the resin encapsulation body 8 .
  • Back surfaces 7 a 1 y , 7 a 2 y and 7 a 3 y of die pads 7 a 1 , 7 a 2 and 7 a 3 are exposed from the back surface 8 b of the resin encapsulation body 8 .
  • the outer shapes of the die pads 7 a 1 , 7 a 2 and 7 a 3 are rectangular and lead frames placed at predetermined intervals, the resin encapsulation body 8 is formed even among the die pads 7 a 1 , 7 a 2 and 7 a 3 .
  • a positioning taper R 1 (index mark) is formed at one corner in the die pad 7 a 3 .
  • the positioning taper R 1 may preferably be formed in part of the die pad 7 a 3 .
  • the taper R 1 is used when the main and back surfaces of the package 6 a are distinguished from each other, in the case of, for example, face-to-face alignment at the shipment of the package 6 a and printing of a trademark on the package 6 a .
  • the taper R 1 is formed by etching, for example.
  • FIG. 28 is a plan view showing one example of a package configuration of a semiconductor device according to a second embodiment of the present invention.
  • the semiconductor device described in FIG. 28 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in terms of the shape of a gate electrode pad BP 3 in a semiconductor chip 5 a , the shapes of a gate electrode pad BP 7 and a source electrode pad BP 5 b in a semiconductor chip 5 b , portions covered with surface protection films 14 and 22 in the semiconductor chips 5 a and 5 b , the shape of a source cell area, etc.
  • FIG. 8 is a plan view showing one example of a package configuration of a semiconductor device according to a second embodiment of the present invention.
  • the semiconductor device described in FIG. 28 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in terms of the shape of a gate electrode pad BP 3 in a semiconductor chip 5 a , the shapes of a gate electrode pad BP 7 and a source
  • the semiconductor chips 5 a , 5 b and 5 c are also shown excepting the semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and resin encapsulation body 8 placed over leads 7 b in order to make it easy to see the drawing. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • a source electrode pad BP 5 (BP 5 a ) connected to the source of a second field effect transistor Q 2 for a low side switch is shaped in an L-shaped fashion, for example along the sides adjacent to a plurality of leads (second power supply terminal) 7 b 2 as shown in FIG. 28 . That is, the source electrode pad BP 5 a is formed only at a bonding section for wires WR 2 electrically connected to the plurality of leads (second power supply terminal) 7 b 2 .
  • the source electrode pad BP 5 b of the semiconductor chip 5 b electrically connected to a second control circuit 3 b of the semiconductor chip 5 c by wires WR 3 is formed on the side opposite to the side adjacent to the plural leads (second power supply terminal) 7 b 2 , of a pair of long sides of the semiconductor chip 5 b . Further, the outer size of the source electrode pad BP 5 b is formed in the same size as the outer size of an electrode pad BP 6 electrically connected to the source of the second field effect transistor Q 2 , of a plurality of electrode pads BP of the semiconductor chip 5 c.
  • the ratio between the occupied areas of the source electrode pads BP 5 a and BP 5 b in the source cell area of the semiconductor chip 5 a is reduced so that the major part of the source cell area, at least more than its half can be formed as an area covered with the surface protection film 22 .
  • the gate electrode pads BP 3 and BP 7 electrically connected to the gates of the first and second field effect transistors Q 1 and Q 2 are formed in the same size as electrode pads BP 4 and BP 8 electrically connected via the wires WR 3 to the gates of the first and second field effect transistors Q 1 and Q 2 , of the plural electrode pads BP of the semiconductor chip 5 c .
  • the gate electrode pads BP 3 and BP 7 are respectively formed of a metal like aluminum (Al), for example.
  • the outer sizes of the gate electrode pads BP 3 and BP 7 are set identical to or smaller than the outer sizes of the electrode pads BP 4 and BP 8 electrically connected the gates of the first and second field effect transistors Q 1 and Q 2 , of the plural electrode pads BP of the semiconductor chip 5 c to thereby make it possible to increase the cell areas of the source regions SR 1 and SR 2 of the first and second field effect transistors Q 1 and Q 2 . It is therefore possible to further reduce the on resistance. That is, the efficiency of voltage conversion can be improved.
  • FIG. 29 is a plan view showing one example of a package configuration of a semiconductor device according to a third embodiment of the present invention.
  • the semiconductor device described in FIG. 29 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in terms of a gate electrode pattern in a semiconductor chip 5 a .
  • FIG. 29 is also shown excepting the semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and resin encapsulation body 8 placed over leads 7 b in order to make it easy to see the drawing. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • the width of a portion (first wiring and first portion) BP 3 a formed between two source electrode pads BP 1 in the gate electrode pattern electrically connected to a gate electrode pad BP 3 of a first field effect transistor Q 1 for a high side switch is formed thicker than the width of a portion (second wiring and second portion) BP 3 b formed along the periphery of a main surface of the semiconductor chip 5 a .
  • the width of the first wiring BP 3 a of the gate electrode pattern is 50 ⁇ m, for example.
  • the width of the second wiring BP 3 b of the gate electrode pattern is 25 ⁇ m, for example.
  • the first wiring BP 3 a of the gate electrode pattern which is formed between the two source electrode pads BP 1 , is a wiring which constitutes the shortest gate current path of gate current paths from the gate electrode pad BP 3 to a channel forming area of a trench gate G 1 in the first field effect transistor Q 1 .
  • the width of the first wiring BP 3 a is formed thicker than that of the second wiring BP 3 b in the gate electrode pattern, a gate resistance can be reduced. If attention is paid only to the viewpoint that the gate resistance is reduced, then the width of the second wiring BP 3 b of the gate electrode pattern may be expanded. However, when the width of the gate electrode pattern is increased, a source cell area is reduced. Since the on resistance of the first field effect transistor Q 1 increases due to the reduction in source cell area, the efficiency of voltage conversion is degraded.
  • the width of the first wiring BP 3 constituting the shortest gate current path of the gate current paths from the gate electrode pad BP 3 to the channel forming area of the trench gate G 1 in the first field effect transistor Q 1 is made larger than that of the second wiring BP 3 b constituting other gate current path to thereby enable a reduction in the resistance of the shortest gate current path. Reducing the resistance of the shortest gate current path from the gate electrode pad BP 3 in this way makes it possible to improve fast responsivity at the turn-on operation of the first field effect transistor Q 1 and enhance the efficiency of voltage conversion.
  • FIG. 30 is a plan view showing one example of a package configuration of a semiconductor device according to a fourth embodiment of the present invention.
  • the semiconductor device described in FIG. 30 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in terms of gate electrode patterns in a semiconductor chip 5 b .
  • FIG. 30 is also shown excepting the semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and resin encapsulation body 8 placed over leads 7 b in order to make it easy to see the drawing. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • the fourth embodiment has the feature that as shown in FIG. 30 , the interval or spacing of a third wiring BP 7 a placed in a position farther from a gate electrode pad BP 7 , in a plurality of third wirings BP 7 a for the gate electrode patterns is made wider than the interval of the corresponding third wiring BP 7 a placed in a position close to the gate electrode pad BP 7 .
  • a further description will be made.
  • the width of the source electrode pad BP 5 formed in a position far power supply terminal ET 4 (plural leads 7 b 2 disposed along an L-shaped line) is formed wider than that of the source electrode pad BP 5 formed near the gate electrode pad BP 7 .
  • the on resistance can be reduced. That is, the efficiency of voltage conversion can be improved.
  • FIG. 31 is a plan view showing one example of a package configuration of a semiconductor device according to a fifth embodiment of the present invention.
  • the semiconductor device described in FIG. 31 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in terms of the layout and number of wires WR connected to the source of a semiconductor chip 5 a .
  • FIG. 31 is also shown excepting the semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and resin encapsulation body 8 placed over leads 7 b in order to make it easy to see the drawing. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • pads BP 2 electrically connected to the source of the semiconductor chip 5 a , of a plurality of electrode pads BP of the semiconductor chip 5 c are disposed on both sides adjacent to electrode pads BP 4 electrically connected to the gate of the semiconductor chip 5 a.
  • the number of plural wires WR 3 a that connect source electrode pads BP 1 of the semiconductor chip 5 a and the electrode pads BP 2 electrically connected to the source of a first field effect transistor Q 1 , of the plural electrode pads BP of the semiconductor chip 5 c can further be increased. It is therefore possible to further reduce a parasitic inductance LsH produced in a wiring path between the source of the first field effect transistor Q 1 and a first control circuit 3 a .
  • the plural wires WR 3 a that connect the source electrode pads BP 1 of the semiconductor chip 5 a and the electrode pads BP 2 of the semiconductor chip 5 c are formed substantially in parallel to a plurality of wires WR 3 b that connect the gate electrode pads BP 4 of the semiconductor chip 5 a and the electrode pads BP 4 of the semiconductor chip 5 c . Therefore, a current feedback rate between the first field effect transistor Q 1 and the first control circuit 3 a can be increased. Therefore, the parasitic inductance LsH produced in the wiring path between the source of the first field effect transistor Q 1 and the first control circuit 3 a can be reduced, and fast responsivity of the first field effect transistor Q 1 is improved, thereby making it possible to enhance the efficiency of voltage conversion.
  • the source electrode pad BP 5 b (BP 5 ) of the semiconductor chip 5 b and the gate electrode pad BP 7 are disposed so as to adjoin each other. That is, a plurality of wires WR 3 c that connect the source electrode pad BP 5 b (BP 5 ) of the semiconductor chip 5 b and the electrode pads BP 6 of the semiconductor chip 5 c , are formed side by side substantially in parallel to a plurality of wires WR 3 d that connect the gate electrode pad BP 7 of the semiconductor chip 5 b and the electrode pads BP 8 of the semiconductor chip 5 c.
  • FIG. 32 is a plan view showing one example of a package configuration of a semiconductor device according to a sixth embodiment of the present invention
  • FIG. 33 is a cross-sectional view taken along line D-D of FIG. 32
  • FIG. 34 is an assembly flow diagram showing a method of manufacturing the semiconductor device according to the sixth embodiment, respectively.
  • the semiconductor device described in FIG. 32 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in that surface processing using silver paste is partly effected on the surface of a lead frame 40 .
  • FIG. 32 is substantially similar to the semiconductor device shown in FIG. 8 in configuration but principally different therefrom in that surface processing using silver paste is partly effected on the surface of a lead frame 40 .
  • semiconductor chips 5 a , 5 b and 5 c semiconductor chips 5 a , 5 b and 5 c , die pads 7 a 1 , 7 a 2 and 7 a 3 and a resin encapsulation body 8 placed over leads 7 b in order to make it easy to see the drawings. Further, the die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • a paste material 41 constituted of, for example, silver (Ag) is applied only onto a portion to be subjected to wire boding in the lead frame 40 whose material comprises, for example, copper (Cu).
  • Wires WR are formed of, for example, gold (Au).
  • the application of the paste material 41 like, for example, (Ag) onto the lead frame 40 enables wire bonding of the wires WR formed of, for example, gold (Au).
  • the area to which silver paste is applied might be weak in the force of adhesion to the resin encapsulation body 8 as compared with copper or the like used as a base or raw material for the lead frame 40
  • the area for contact between the lead frame 40 and the resin encapsulation body 8 can be sufficiently ensured owing to the application of the paste material 41 onto the wire bonding portion alone. It is therefore possible to improve the force of adhesion between copper constituting the lead frame 40 and the resin encapsulation body 8 .
  • a process step for removing resin burrs formed in back surfaces 7 a 1 y , 7 a 2 y and 7 a 3 y of the die pads 7 a 1 , 7 a 2 and 7 a 3 after the formation of the resin encapsulation body 8 is performed as shown in FIG. 34 .
  • a plating process step for effecting solder plating for packaging a semiconductor substrate on the plural leads 7 b and the back surfaces 7 a 1 y , 7 a 2 y and 7 a 3 y of the die pads 7 a 1 , 7 a 2 and 7 a 3 all exposed from the resin encapsulation body 8 is performed.
  • the lead frame 40 formed of a copper (Cu) frame is used in this way, a failure in the substrate packaging of the semiconductor device due to the resin burrs can be suppressed because plating is done after the formation of the resin encapsulation body 8 . That is, the reliability of the semiconductor device can be enhanced.
  • Cu copper
  • the first through fifth embodiments respectively have explained such a configuration that the plurality of die pads 7 a 1 , 7 a 2 and 7 a 3 given lead-free plating like, for example, Ni/Pd/Au flush plating are accommodated or held in one package 6 a , a high adhesive force is required.
  • the present embodiment will explain a configuration which considers its adhesive force and takes into consideration preventive measures against lead omission.
  • FIG. 35 is a plan view illustrating one example of the surface side of a unit area of a lead frame 42 employed in a semiconductor device according to the seventh embodiment of the present invention
  • FIG. 36 is a plan view showing the back surface side of the lead frame shown in FIG. 35 , respectively.
  • half-etched areas are given hatching in order to make it easy to see the drawings even in the case of FIG. 36 .
  • half etching is effected along peripheral portions of the back surfaces of the die pads 7 a 1 , 7 a 2 and 7 a 3 in which their corresponding semiconductor chips 5 a , 5 b and 5 c are placed.
  • cut-away portions (depressions and projections, recesses) 42 are formed in part of the half-etched area of the die pad 7 a 2 and portions faced with a slit that forms the boundary among the three die pads 7 a 1 , 7 a 2 and 7 a 3 . This is because the adhesion between the resin encapsulation body 8 and the lead frame is required in particular at the slit that forms the boundary among the three die pads 7 a 1 , 7 a 2 and 7 a 3 .
  • cut-away portions 43 are formed by etching, for example.
  • the peripheral portions of the die pads 7 a 1 , 7 a 2 and 7 a 3 are half-etched and the cut-away portions 43 are formed in some of the half-etch area of the die pad 7 a 2 . Consequently, the force of adhesion between the die pad 7 a 3 and the resin encapsulation body 8 becomes strong and the reliability of the semiconductor device can further be improved as compared with the first embodiment. That is, this results in a preventive measure against lead omission.
  • the cut-away portions 43 are not limited to some of the half-etch area of the die pad 7 a 3 .
  • the cut-away portions 43 may be formed in parts of the half-etch areas of the die pads 7 a 2 and 7 a 3 .
  • a taper R 2 is formed at one corner on the surface side of the die pad 7 a 1 .
  • the taper R 2 is formed by etching, for example.
  • An eighth embodiment will explain a modification of the configuration for the preventive measure against the lead omission.
  • FIG. 37 is a plan view illustrating one example of the surface side of a unit area of a lead frame 44 employed in a semiconductor device according to the eighth embodiment of the present invention
  • FIG. 38 is a plan view showing the back surface side of the unit area of the lead frame 44 shown in FIG. 37 , respectively.
  • half-etched areas are given hatching in order to make it easy to see the drawings even in the case of FIG. 38 .
  • half etching is effected along peripheral portions of the back surfaces of the die pads 7 a 1 , 7 a 2 and 7 a 3 in which their corresponding semiconductor chips 5 a , 5 b and 5 c are placed.
  • cut-away portions (depressions and projections, recesses) 43 are formed in part of the half-etched area of the die pad 7 a 3 and through holes (slits) 45 are defined in some of the die pads 7 a 1 , 7 a 2 and 7 a 3 .
  • the cut-away portions 43 are formed by etching, for example.
  • a trench 46 is defined in part of the surface of the die pad 7 a 2 .
  • the trench 46 is formed by etching or punching, for example.
  • the through holes 45 are defined in the parts of the die pads 7 a 1 , 7 a 2 and 7 a 3 to thereby make it possible to further strengthen the force of adhesion between each of the die pads 7 a 1 , 7 a 2 and 7 a 3 and the resin encapsulation body 8 and further enhance the reliability of a semiconductor device as compared with the seventh embodiment.
  • a phenomenon self turn-on occurs wherein when a first field effect transistor Q 1 for a high side switch is switched to a second field effect transistor Q 2 for a low side switch, a current (through current) flows from a first power supply terminal ET 1 to a second power supply terminal.
  • the path for the through current can be cut off by forming the through holes 45 between a portion to be wire-bonded from the semiconductor chip 5 a to the die pad 7 a 2 and the semiconductor chip 5 b . It is therefore possible to suppress the self turn-on. Further, a current (first current) I 1 that flows when the first field effect transistor Q 1 for the high side switch is turned on, becomes easy to flow toward an output terminal. Since the strengths of the die pads 7 a 1 , 7 a 2 and 7 a 3 are reduced as the number of the through holes 45 increases, the through holes 45 may preferably be formed only at the positions where the self turn-on is suppressed, as in the present embodiment.
  • the force of adhesion between the die pad 7 a 2 and the resin encapsulation body 8 can also be improved without cutting off the path for the current (first current) I 1 supplied to the outside. It is therefore possible to further enhance the reliability of the semiconductor device as compared with the seventh embodiment. This is effective in improving the adhesive force when the through holes 45 are formed. Since, however, the path for the current (first current) I 1 supplied to the outside becomes narrow, the resistance increases. Thus, it is not preferable to form the through holes 45 on the side of the output terminal ET 5 that supplies the output power supply potential to the outside because the efficiency of voltage conversion is degraded.
  • the area of the die pad 7 a 2 is larger than that of the semiconductor chip 5 b , the area for contact between the die pad 7 a 2 and the resin encapsulation body 8 becomes large. Since the force of adhesion between the die pad 7 a 2 and the resin encapsulation body 8 is lower than that between the semiconductor chip 5 b and the resin encapsulation body 8 , the formation of these through holes 45 and the trench 46 are effective when the die pad 7 a 2 is larger than the semiconductor chip 5 b .
  • the trench 46 is not limited to some of the surface of the die pad 7 a 2 but may be formed in respective parts on the surface sides of the die pads 7 a 1 and 7 a 3 .
  • the through holes 45 and the trench 46 are not limited to such shapes as shown in FIG. 37 .
  • a ninth embodiment will explain a modification of the configuration for the preventive measure against the lead omission.
  • FIG. 39 is a plan view illustrating one example of the surface side of a unit area of a lead frame 47 employed in a semiconductor device according to the ninth embodiment of the present invention
  • FIG. 40 is a plan view showing the back surface side of the unit area of the lead frame 47 shown in FIG. 39 , respectively.
  • half-etched areas are given hatching in order to make it easy to see the drawings even in the case of FIG. 40 .
  • half etching is effected along peripheral portions on the back surface sides of die pads 7 a 1 , 7 a 2 and 7 a 3 . Further, cut-away portions are formed in part of the half-etched areas. Cut-away portions are defined even in some of a second power supply terminal formed in an L-shaped fashion and subjected to half etching. At some of plural leads 7 b , only side surface portions 11 a of their leading ends are half-etched. The cut-away portions are formed by etching, for example.
  • the force of adhesion between each of the plural leads 7 b and a resin encapsulation body 8 can also be further strengthened as well as enhancement of the force of adhesion between each of the die pads 7 a 1 , 7 a 2 and 7 a 3 and the resin encapsulation body 8 .
  • This means that engagement with the resin encapsulation body 8 is improved by forming the cut-away portions in half-etched areas of the die pads 7 a 1 , 7 a 2 and 7 a 3 and plural leads 7 b.
  • FIG. 41 is a plan view illustrating a configurational example of a package 6 a including some circuits of a non-insulated type DC-DC converter 1 according to a tenth embodiment of the present invention
  • FIG. 42 is a cross-sectional view taken along line E-E of FIG. 41 , respectively.
  • FIG. 41 is also shown excepting a partial resin encapsulation body 8 in order to make it easy to see the drawing. Further, die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • some of wirings for electrically connecting electrode pads BP and respective parts are configured as metal plate wirings 48 in place of the wires WR. That is, source electrode pads BP 1 of a first field effect transistor Q 1 of a semiconductor chip 5 a are electrically connected to the die pad 7 a 2 through one metal plate wiring 48 a . Source electrode pads BP 5 of a second field effect transistor Q 2 of a semiconductor chip 5 b are electrically connected to leads 7 b 2 ( 7 b ) through one metal plate wiring 48 b .
  • the metal plate wiring 48 is formed of a metal like, for example, copper (Cu) or aluminum (Al) or the like and electrically connected to electrode pads BP and leads 7 b through bump electrodes 49 .
  • the bump electrodes 49 are formed of a metal like, for example, solder or gold (Au) or the like. A conductive resin may be used in place of the bump electrodes 49 .
  • the metal plate wiring 48 is also covered with a resin encapsulation body 8 over its entirety.
  • the inductance parasitized on each wiring path can further be reduced owing to the use of the metal plate wiring 48 in place of the wires WR. Therefore, a switching loss can further be reduced and the efficiency of voltage conversion of the non-insulated type DC-DC converter 1 can be further improved as compared with the first embodiment.
  • the wires WR 3 (WR) that electrically connect the plural electrode pads BP of first and second control circuits 3 a and 3 b and their respective parts may preferably be formed of a metal plate wiring 48 c ( 48 ).
  • a metal plate wiring 48 c ( 48 ) may be formed at the plural electrode pads BP of the first and second control circuits 3 a and 3 b .
  • apertures therefor are narrow like 90 ⁇ m, for example. Even if they are connected by the metal plate wirings 48 in place of the wires WR, the metal plate wirings 48 narrow in width are used. Therefore, this does not lead to a reduction in parasitized inductance as compared with the wires WR.
  • the metal plate wirings 48 of, for example, 100 ⁇ m or less. It is also difficult to connect the same as compared with the wires WR. Therefore, the cost of each product increases and the yield thereof is reduced. Thus, it is not preferable to electrically connect the plural electrode pads BP of the first and second control circuits 3 a and 3 b and their respective parts by the metal plate wirings 48 .
  • a plurality of wires WR are connected side by side.
  • the plurality of wires WR are combined into one metal plate wiring 48 . Consequently, the width of the metal plate wiring 48 is also expanded to 200 ⁇ m, for example and the metal plate wiring may also electrically be connected.
  • the first and second field effect transistors Q 1 and Q 2 and the first and second control circuits 3 a and 3 b are electrically connected to one another by the metal plate wirings 48 to reduce the parasitized inductances, so that the switching loss can be improved.
  • FIG. 43 is an assembly flow diagram showing a method for manufacturing the semiconductor device according to the tenth embodiment of the present invention.
  • the eleventh embodiment adopts a batch type transfer molding method for using a multicavity lead frame having a plurality of product forming areas and collectively resin-encapsulating the semiconductor chips 5 a , 5 b and 5 c mounted in the respective product forming areas.
  • a resin encapsulation body 8 is formed and thereafter the multicavity lead frame and the resin encapsulation body 8 are divided into plural pieces or fractions by dicing, for example. Accordingly, the resin encapsulation body 8 and lead frame employed in the eleventh embodiment are substantially identical in outer size.
  • a plurality of semiconductor devices can be obtained by one resin encapsulation. It is therefore possible to enhance product yields and reduce the cost of each product as compared with the first embodiment.
  • FIG. 44 is an assembly flow diagram showing a method for manufacturing the semiconductor device according to the eleventh embodiment of the present invention.
  • a lead frame 10 is placed on a sealing tape prior to at least a wiring bonding step.
  • the die pads become instable upon wire bonding, thereby causing a fear that a bonding failure will occur.
  • the thick wires WR are wire-bonded as in the first embodiment, they are placed under a higher load and connected by an ultrasonic wave, and hence the bonding failure is easy to further take place. There is a fear that even upon a die bonding step, the die pads become instable and hence a failure in packaging will occur.
  • the lead frame 10 is placed over the sealing tape prior to the die bonding step to thereby stabilize the respective die pads, whereby the failure in packaging and the failure in wire bonding can be suppressed.
  • FIG. 45 is a plan view illustrating a configurational example of a package 6 a including some circuits of a non-insulated type DC-DC converter 1 according to a thirteenth embodiment of the present invention
  • FIG. 46 is a cross-sectional view taken along line F-F of FIG. 45
  • FIG. 47 is an overall plan view showing the surface side of a semiconductor device according to the present embodiment, respectively.
  • FIG. 45 is also shown excepting a partial resin encapsulation body 8 in order to make it easy to see the drawing. Further, die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • a metal body 60 is bonded onto a main surface of a semiconductor chip 5 b , and part of the metal body 60 is exposed from the resin encapsulation body 8 .
  • the metal body 60 is formed of a metal high in thermal conductivity like, for example, copper or aluminum or the like and bonded to a source electrode pad BP 5 of a semiconductor chip 5 b through solder or an adhesive material 61 formed of a conductive resin or the like. Since the semiconductor chip 5 b is longer than the semiconductor chip 5 a in on time as shown in FIG. 3 , the semiconductor chip 5 b is apt to generate heat in particular.
  • the metal body 60 is disposed so as to cover an area for forming a second field effect transistor Q 2 corresponding to a heat generation source of the semiconductor chip 5 b .
  • heat generated at the semiconductor chip 5 b is radiated into the wiring board side through the die pad 7 a 2 from the back surface of the semiconductor chip 5 b .
  • the heat is radiated to the outside through the metal body 60 even from the main surface of the semiconductor chip 5 b as shown in FIGS. 46 and 47 .
  • a further improvement in dissipation can be carried out by placing a radiating fin over the upper surface of the package 6 a and bonding it onto an exposed surface of the metal body 60 .
  • the present embodiment will explain a modification of the heat radiation construction.
  • FIG. 48 is a plan view illustrating a configurational example of a package 6 a including some circuits of a non-insulated type DC-DC converter 1 according to the fourteenth embodiment of the present invention
  • FIG. 49 is a cross-sectional view taken along line G-G of FIG. 48
  • FIG. 50 is an overall plan view showing the surface side of a semiconductor device according to the fourteenth embodiment, respectively.
  • FIG. 48 is also shown excepting a partial resin encapsulation body 8 in order to make it easy to see the drawing. Further, die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • some of wirings for electrically connecting electrode pads BP and respective parts are configured as metal plate wirings 48 in place of the wires WR in a manner similar to the tenth embodiment. Further, some of the metal plate wirings 48 are exposed from the resin encapsulation body 8 . The metal plate wirings 48 are disposed so as to cover areas for forming first and second field effect transistors Q 1 and Q 2 corresponding to heat generation sources of semiconductor chips 5 a and 5 b in particular. Although the metal plate wirings 48 a and 48 b on both sides of the semiconductor chips 5 a and 5 b are exposed from the upper surface of the package 6 a in FIGS.
  • each of the metal plate wirings 48 is caused to have a radiating function in addition to advantageous effects obtained at the tenth and thirteenth embodiments.
  • the number of the process steps for assembling the package 6 a can be reduced as compared with the thirteenth embodiment, and the time required to assemble the package 6 a can be shortened. Since the number of parts can be decreased, the cost of the semiconductor device can be reduced.
  • the present embodiment will explain a modification of the heat radiation construction.
  • FIG. 51 is a plan view illustrating a configurational example of a package 6 a including some circuits of a non-insulated type DC-DC converter 1 according to the fifteenth embodiment of the present invention
  • FIG. 52 is a cross-sectional view taken along line H-H of FIG. 51
  • FIG. 53 is an overall plan view showing the surface side of a semiconductor device according to the fifteenth embodiment, respectively.
  • FIG. 51 is also shown excepting a partial resin encapsulation body 8 in order to make it easy to see the drawing. Further, die pads 7 a 1 , 7 a 2 and 7 a 3 and leads 7 b are given hatching.
  • some of wirings for electrically connecting electrode pads BP and respective parts are configured as metal plate wirings 48 in place of the wires WR in a manner similar to the fourteenth embodiment. Further, some of the metal plate wirings 48 are exposed from the resin encapsulation body 8 .
  • the metal plate wirings 48 are disposed so as to cover areas for forming first and second field effect transistors Q 1 and Q 2 corresponding to heat generation sources of semiconductor chips 5 a and 5 b in particular.
  • metal bodies 62 are respectively bonded onto the surfaces of the die pads 7 a 1 and 7 a 2 , and some of the metal bodies 62 are exposed from the resin encapsulation body 8 as shown in FIGS. 51 through 53 .
  • heat generated at the semiconductor chips 5 a and 5 b are radiated from the back surfaces of the semiconductor chips 5 a and 5 b to the wiring board side through the die pads 7 a 1 and 7 a 2 . Besides, the heat is radiated to the outside even from a main surface of the semiconductor chip 5 b through the metal plate wiring 48 . Furthermore, the heat are radiated from the back surfaces of the semiconductor chips 5 a and 5 b to the outside of the resin encapsulation body 8 through the die pads 7 a 1 and 7 a 2 and metal bodies 62 .
  • dissipation higher than the twelfth and thirteenth embodiments can be obtained.
  • the dissipation can be further improved by placing a radiating fin over the upper surface of the package 6 a and bonding it onto an exposed surface of each metal body 62 .
  • each metal plate wiring 48 is caused to have a lead-omission preventing function in addition to the advantageous effects obtained at the tenth, thirteenth and fourteenth embodiments.
  • the areas of the die pads 7 a 1 , 7 a 2 and 7 a 3 are formed larger than those of semiconductor chips 5 a , 5 b and 5 c .
  • the semiconductor chips 5 a , 5 b and 5 c are respectively disposed so as to approach one sides of the die pads 7 a 1 , 7 a 2 and 7 a 3 . Therefore, since any mounting-free large flat areas exist in the die pads 7 a 1 and 7 a 2 in particular, the force of adhesion to the resin encapsulation body 8 is weak.
  • the metal bodies 62 are placed over the die pads 7 a 1 and 7 a 2 . Consequently, the force of adhesion between each of the die pads 7 a 1 and 7 a 2 and the resin encapsulation body 8 can be made high as well as an improvement in radiating effect, thereby making it possible to further improve the reliability of the semiconductor device.
  • the present invention is not limited to it.
  • a BGA (Ball Grid Array) package structure may be adopted.
  • the DC-DC converter widely used as one example of the power circuit has been illustrated with the power MOS•FET as an example.
  • the present invention is not limited to it.
  • a power MIS•FET (Metal Insulator Semiconductor Field Effect Transistor) structure with an insulating film intervened therein in place of, for example, an oxide film may be adopted.
  • the present invention is applicable to the manufacturing industry of a semiconductor.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
US11/053,326 2004-03-31 2005-02-09 Semiconductor device with non-overlapping chip mounting sections Active 2025-08-05 US7554181B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US11/680,758 US7554209B2 (en) 2004-03-31 2007-03-01 Semiconductor device having a metal plate conductor
US12/464,135 US7928589B2 (en) 2004-03-31 2009-05-12 Semiconductor device
US12/708,044 US8013430B2 (en) 2004-03-31 2010-02-18 Semiconductor device including DC-DC converter
US13/188,613 US8159054B2 (en) 2004-03-31 2011-07-22 Semiconductor device
US13/372,227 US8350372B2 (en) 2004-03-31 2012-02-13 Semiconductor device including a DC-DC converter
US13/717,464 US8575733B2 (en) 2004-03-31 2012-12-17 Semiconductor device
US14/014,286 US8796827B2 (en) 2004-03-31 2013-08-29 Semiconductor device including a DC-DC converter
US14/322,320 US9412701B2 (en) 2004-03-31 2014-07-02 Semiconductor device including a DC-DC converter

Applications Claiming Priority (2)

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JP2004-106224 2004-03-31
JP2004106224A JP4489485B2 (ja) 2004-03-31 2004-03-31 半導体装置

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US7554181B2 true US7554181B2 (en) 2009-06-30

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US11/053,326 Active 2025-08-05 US7554181B2 (en) 2004-03-31 2005-02-09 Semiconductor device with non-overlapping chip mounting sections
US11/680,758 Active 2025-04-04 US7554209B2 (en) 2004-03-31 2007-03-01 Semiconductor device having a metal plate conductor
US12/464,135 Active US7928589B2 (en) 2004-03-31 2009-05-12 Semiconductor device
US12/708,044 Active US8013430B2 (en) 2004-03-31 2010-02-18 Semiconductor device including DC-DC converter
US13/188,613 Active US8159054B2 (en) 2004-03-31 2011-07-22 Semiconductor device
US13/372,227 Active US8350372B2 (en) 2004-03-31 2012-02-13 Semiconductor device including a DC-DC converter
US13/717,464 Active US8575733B2 (en) 2004-03-31 2012-12-17 Semiconductor device
US14/014,286 Active US8796827B2 (en) 2004-03-31 2013-08-29 Semiconductor device including a DC-DC converter
US14/322,320 Active US9412701B2 (en) 2004-03-31 2014-07-02 Semiconductor device including a DC-DC converter

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US11/680,758 Active 2025-04-04 US7554209B2 (en) 2004-03-31 2007-03-01 Semiconductor device having a metal plate conductor
US12/464,135 Active US7928589B2 (en) 2004-03-31 2009-05-12 Semiconductor device
US12/708,044 Active US8013430B2 (en) 2004-03-31 2010-02-18 Semiconductor device including DC-DC converter
US13/188,613 Active US8159054B2 (en) 2004-03-31 2011-07-22 Semiconductor device
US13/372,227 Active US8350372B2 (en) 2004-03-31 2012-02-13 Semiconductor device including a DC-DC converter
US13/717,464 Active US8575733B2 (en) 2004-03-31 2012-12-17 Semiconductor device
US14/014,286 Active US8796827B2 (en) 2004-03-31 2013-08-29 Semiconductor device including a DC-DC converter
US14/322,320 Active US9412701B2 (en) 2004-03-31 2014-07-02 Semiconductor device including a DC-DC converter

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JP (1) JP4489485B2 (ko)
KR (2) KR101116202B1 (ko)
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US8796827B2 (en) 2014-08-05

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