TWI605302B - 使用帶電粒子束微影術之用於臨界尺寸一致性之方法 - Google Patents

使用帶電粒子束微影術之用於臨界尺寸一致性之方法 Download PDF

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Publication number
TWI605302B
TWI605302B TW102113610A TW102113610A TWI605302B TW I605302 B TWI605302 B TW I605302B TW 102113610 A TW102113610 A TW 102113610A TW 102113610 A TW102113610 A TW 102113610A TW I605302 B TWI605302 B TW I605302B
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Taiwan
Prior art keywords
shot
pattern
charged particle
shots
dose
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TW102113610A
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English (en)
Chinese (zh)
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TW201351030A (zh
Inventor
萊恩 派曼
羅伯特Ｃ 帕克
藤村明
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D2S公司
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Priority claimed from US13/862,475 external-priority patent/US9400857B2/en
Application filed by D2S公司 filed Critical D2S公司
Publication of TW201351030A publication Critical patent/TW201351030A/zh
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Publication of TWI605302B publication Critical patent/TWI605302B/zh

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW102113610A 2012-04-18 2013-04-17 使用帶電粒子束微影術之用於臨界尺寸一致性之方法 TWI605302B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261625932P 2012-04-18 2012-04-18
US13/862,475 US9400857B2 (en) 2011-09-19 2013-04-15 Method and system for forming patterns using charged particle beam lithography
US13/862,476 US9038003B2 (en) 2012-04-18 2013-04-15 Method and system for critical dimension uniformity using charged particle beam lithography
US13/862,472 US8719739B2 (en) 2011-09-19 2013-04-15 Method and system for forming patterns using charged particle beam lithography
US13/862,471 US20130283217A1 (en) 2012-04-18 2013-04-15 Method and system for forming patterns using charged particle beam lithography

Publications (2)

Publication Number Publication Date
TW201351030A TW201351030A (zh) 2013-12-16
TWI605302B true TWI605302B (zh) 2017-11-11

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Family Applications (1)

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TW102113610A TWI605302B (zh) 2012-04-18 2013-04-17 使用帶電粒子束微影術之用於臨界尺寸一致性之方法

Country Status (5)

Country Link
US (1) US9038003B2 (enExample)
JP (1) JP6189933B2 (enExample)
KR (1) KR20150001834A (enExample)
TW (1) TWI605302B (enExample)
WO (1) WO2013158574A1 (enExample)

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TWI687648B (zh) * 2018-02-22 2020-03-11 美商應用材料股份有限公司 用於顯示器製造之一基板的自動臨界尺寸測量的方法、檢查用於顯示器製造之一大面積基板的方法、用以檢查用於顯示器製造之一大面積基板之設備及操作其之方法

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