JP6189933B2 - 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム - Google Patents

荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム Download PDF

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JP6189933B2
JP6189933B2 JP2015507093A JP2015507093A JP6189933B2 JP 6189933 B2 JP6189933 B2 JP 6189933B2 JP 2015507093 A JP2015507093 A JP 2015507093A JP 2015507093 A JP2015507093 A JP 2015507093A JP 6189933 B2 JP6189933 B2 JP 6189933B2
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shot
pattern
shots
charged particle
particle beam
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JP2015515148A5 (enExample
JP2015515148A (ja
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ペアマン，ライアン
パック，ロバート・シィ
晶 藤村
晶 藤村
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D2S Inc
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D2S Inc
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2015507093A 2012-04-18 2013-04-15 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム Active JP6189933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261625932P 2012-04-18 2012-04-18
US61/625,932 2012-04-18
PCT/US2013/036671 WO2013158574A1 (en) 2012-04-18 2013-04-15 Method and system for critical dimension uniformity using charged particle beam lithography

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JP2015515148A JP2015515148A (ja) 2015-05-21
JP2015515148A5 JP2015515148A5 (enExample) 2016-05-26
JP6189933B2 true JP6189933B2 (ja) 2017-08-30

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US (1) US9038003B2 (enExample)
JP (1) JP6189933B2 (enExample)
KR (1) KR20150001834A (enExample)
TW (1) TWI605302B (enExample)
WO (1) WO2013158574A1 (enExample)

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