TWI469298B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI469298B TWI469298B TW98132970A TW98132970A TWI469298B TW I469298 B TWI469298 B TW I469298B TW 98132970 A TW98132970 A TW 98132970A TW 98132970 A TW98132970 A TW 98132970A TW I469298 B TWI469298 B TW I469298B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- wiring layer
- wiring
- oxide semiconductor
- insulating film
- Prior art date
Links
- 239000010408 film Substances 0.000 claims description 271
- 239000010409 thin film Substances 0.000 claims description 193
- 239000004065 semiconductor Substances 0.000 claims description 136
- 239000000758 substrate Substances 0.000 claims description 102
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- 239000011159 matrix material Substances 0.000 claims description 18
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- 229910052725 zinc Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 description 7
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
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- 150000002894 organic compounds Chemical class 0.000 description 4
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 239000000696 magnetic material Substances 0.000 description 1
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- 150000003481 tantalum Chemical class 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
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- Electroluminescent Light Sources (AREA)
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| JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
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2009
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- 2009-09-24 KR KR1020117015512A patent/KR101273972B1/ko active Active
- 2009-09-24 KR KR1020167022259A patent/KR101761108B1/ko active Active
- 2009-09-24 KR KR1020117010133A patent/KR101652693B1/ko not_active Expired - Fee Related
- 2009-09-24 WO PCT/JP2009/067118 patent/WO2010038819A1/en not_active Ceased
- 2009-09-29 TW TW98132970A patent/TWI469298B/zh not_active IP Right Cessation
- 2009-09-29 TW TW100123837A patent/TWI469302B/zh not_active IP Right Cessation
- 2009-10-01 US US12/571,552 patent/US7989815B2/en active Active
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| CN1539093A (zh) * | 2001-08-08 | 2004-10-20 | �ʼҷ����ֵ��ӹɷ�����˾ | 用于像素化电子器件的静电放电保护 |
| JP2007096055A (ja) * | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110083760A (ko) | 2011-07-20 |
| JP2017041639A (ja) | 2017-02-23 |
| TWI469302B (zh) | 2015-01-11 |
| KR20160101725A (ko) | 2016-08-25 |
| KR101761108B1 (ko) | 2017-07-25 |
| US20100084653A1 (en) | 2010-04-08 |
| KR101652693B1 (ko) | 2016-09-01 |
| KR101273972B1 (ko) | 2013-06-12 |
| JP5766246B2 (ja) | 2015-08-19 |
| KR20110086017A (ko) | 2011-07-27 |
| US20130092934A1 (en) | 2013-04-18 |
| JP6317406B2 (ja) | 2018-04-25 |
| JP2014042036A (ja) | 2014-03-06 |
| US8334540B2 (en) | 2012-12-18 |
| TW201030923A (en) | 2010-08-16 |
| JP6010188B2 (ja) | 2016-10-19 |
| US7989815B2 (en) | 2011-08-02 |
| TW201143010A (en) | 2011-12-01 |
| US20110260159A1 (en) | 2011-10-27 |
| KR101803720B1 (ko) | 2017-12-01 |
| US8674371B2 (en) | 2014-03-18 |
| JP2015213179A (ja) | 2015-11-26 |
| KR20170086144A (ko) | 2017-07-25 |
| WO2010038819A1 (en) | 2010-04-08 |
| JP2010107976A (ja) | 2010-05-13 |
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