KR101803720B1 - 표시 장치 - Google Patents

표시 장치 Download PDF

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Publication number
KR101803720B1
KR101803720B1 KR1020177019951A KR20177019951A KR101803720B1 KR 101803720 B1 KR101803720 B1 KR 101803720B1 KR 1020177019951 A KR1020177019951 A KR 1020177019951A KR 20177019951 A KR20177019951 A KR 20177019951A KR 101803720 B1 KR101803720 B1 KR 101803720B1
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South Korea
Prior art keywords
transistor
electrode
thin film
layer
wiring
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English (en)
Korean (ko)
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KR20170086144A (ko
Inventor
순페이 야마자키
켄고 아키모토
시게키 코모리
히데키 우오치
토모야 후타무라
타카히로 카사하라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H01L27/0266—
    • H01L27/1214—
    • H01L27/1225—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020177019951A 2008-10-03 2009-09-24 표시 장치 Active KR101803720B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008259063 2008-10-03
JPJP-P-2008-259063 2008-10-03
PCT/JP2009/067118 WO2010038819A1 (en) 2008-10-03 2009-09-24 Display device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167022259A Division KR101761108B1 (ko) 2008-10-03 2009-09-24 반도체 장치

Publications (2)

Publication Number Publication Date
KR20170086144A KR20170086144A (ko) 2017-07-25
KR101803720B1 true KR101803720B1 (ko) 2017-12-01

Family

ID=42073577

Family Applications (4)

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KR1020167022259A Active KR101761108B1 (ko) 2008-10-03 2009-09-24 반도체 장치
KR1020117015512A Active KR101273972B1 (ko) 2008-10-03 2009-09-24 반도체장치
KR1020177019951A Active KR101803720B1 (ko) 2008-10-03 2009-09-24 표시 장치
KR1020117010133A Expired - Fee Related KR101652693B1 (ko) 2008-10-03 2009-09-24 표시 장치

Family Applications Before (2)

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KR1020167022259A Active KR101761108B1 (ko) 2008-10-03 2009-09-24 반도체 장치
KR1020117015512A Active KR101273972B1 (ko) 2008-10-03 2009-09-24 반도체장치

Family Applications After (1)

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KR1020117010133A Expired - Fee Related KR101652693B1 (ko) 2008-10-03 2009-09-24 표시 장치

Country Status (5)

Country Link
US (3) US7989815B2 (enExample)
JP (4) JP2010107976A (enExample)
KR (4) KR101761108B1 (enExample)
TW (2) TWI469298B (enExample)
WO (1) WO2010038819A1 (enExample)

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KR101803264B1 (ko) 2008-09-19 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101490148B1 (ko) 2008-09-19 2015-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101761108B1 (ko) 2008-10-03 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
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KR101402294B1 (ko) * 2009-10-21 2014-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
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TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102168439B1 (ko) 2011-07-22 2020-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
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KR102105485B1 (ko) * 2012-11-23 2020-04-29 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
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KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
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