TWI385711B - 清潔器件、微影裝置及微影裝置清潔方法 - Google Patents
清潔器件、微影裝置及微影裝置清潔方法 Download PDFInfo
- Publication number
- TWI385711B TWI385711B TW97114672A TW97114672A TWI385711B TW I385711 B TWI385711 B TW I385711B TW 97114672 A TW97114672 A TW 97114672A TW 97114672 A TW97114672 A TW 97114672A TW I385711 B TWI385711 B TW I385711B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- cleaned
- cleaning
- substrate
- high frequency
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims description 147
- 238000000034 method Methods 0.000 title claims description 25
- 239000007788 liquid Substances 0.000 claims description 319
- 239000000758 substrate Substances 0.000 claims description 152
- 239000012530 fluid Substances 0.000 claims description 31
- 238000001459 lithography Methods 0.000 claims description 28
- 238000000671 immersion lithography Methods 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 18
- 238000007654 immersion Methods 0.000 claims description 17
- 239000000356 contaminant Substances 0.000 claims description 11
- 239000000284 extract Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 description 47
- 230000004888 barrier function Effects 0.000 description 45
- 230000005855 radiation Effects 0.000 description 45
- 239000007789 gas Substances 0.000 description 36
- 239000000654 additive Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 230000000996 additive effect Effects 0.000 description 15
- 238000013461 design Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 230000033001 locomotion Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 8
- 238000005187 foaming Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000344 soap Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical group Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 NaCl) Chemical class 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92424407P | 2007-05-04 | 2007-05-04 | |
| US11/819,949 US9013672B2 (en) | 2007-05-04 | 2007-06-29 | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200845129A TW200845129A (en) | 2008-11-16 |
| TWI385711B true TWI385711B (zh) | 2013-02-11 |
Family
ID=39938698
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97114672A TWI385711B (zh) | 2007-05-04 | 2008-04-22 | 清潔器件、微影裝置及微影裝置清潔方法 |
| TW101110471A TW201234414A (en) | 2007-05-04 | 2008-04-22 | A cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101110471A TW201234414A (en) | 2007-05-04 | 2008-04-22 | A cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7841352B2 (enExample) |
| JP (7) | JP4686571B2 (enExample) |
| KR (2) | KR101024566B1 (enExample) |
| CN (1) | CN101299133B (enExample) |
| TW (2) | TWI385711B (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8858805B2 (en) * | 2005-01-25 | 2014-10-14 | Robert Edward Vago | Method and device for removal of ammonia and related contaminants from water |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| WO2008029884A1 (en) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Cleaning member, cleaning method and device manufacturing method |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US8654305B2 (en) | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US7841352B2 (en) | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| WO2008146819A1 (ja) * | 2007-05-28 | 2008-12-04 | Nikon Corporation | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
| US9019466B2 (en) | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー．ブイ． | クリーニング装置および液浸リソグラフィ装置 |
| NL1036186A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| KR101423611B1 (ko) * | 2008-01-16 | 2014-07-30 | 삼성전자주식회사 | 기판 처리 장치, 노광 장치 및 클리닝 툴의 세정 방법 |
| US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| NL1036709A1 (nl) | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| WO2010088194A2 (en) | 2009-01-28 | 2010-08-05 | Advanced Technology Materials, Inc. | Lithographic tool in situ clean formulations |
| NL2004540A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US8619231B2 (en) * | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
| JP2011003759A (ja) * | 2009-06-19 | 2011-01-06 | Nikon Corp | 部材の洗浄方法、露光方法、デバイス製造方法、および洗浄液 |
| JP5058305B2 (ja) * | 2009-06-19 | 2012-10-24 | エーエスエムエル ネザーランズ ビー．ブイ． | 液浸リソグラフィ装置、液体閉じ込め構造体、液浸リソグラフィ装置用の投影システムの最終エレメント、および基板テーブル |
| NL2005167A (en) * | 2009-10-02 | 2011-04-05 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| NL2005610A (en) * | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
| US20120019803A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
| US20120019804A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium |
| US20120160264A1 (en) * | 2010-12-23 | 2012-06-28 | Richard Endo | Wet Processing Tool with Site Isolation |
| US8926762B2 (en) * | 2011-09-06 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for movable megasonic wafer probe |
| US9953847B2 (en) * | 2013-09-10 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for cleaning |
| CN104216236B (zh) * | 2014-08-22 | 2016-08-17 | 深圳市大川光电设备有限公司 | 适合影像转移曝光机的菲林与工件密着方法 |
| TWI626506B (zh) * | 2016-07-28 | 2018-06-11 | 非接觸式光罩／晶圓潔淨裝置 | |
| EP3447581A1 (en) * | 2017-08-23 | 2019-02-27 | ASML Netherlands B.V. | A clear-out tool, a lithographic apparatus and a device manufacturing method |
| CN110560424A (zh) * | 2019-09-18 | 2019-12-13 | 宁波南大光电材料有限公司 | 一种用于光刻设备的非接触式超声清洗装置 |
| FR3100998B1 (fr) * | 2019-09-25 | 2022-06-03 | Lille Ecole Centrale | Dispositif pour nettoyer un support recouvert d’un liquide |
| EP3919978A1 (en) * | 2020-06-05 | 2021-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and a method of forming a particle shield |
| EP4129566A4 (en) * | 2020-08-24 | 2024-08-07 | DMG Mori Co., Ltd. | Information processing device and machine tool |
| CN112684675B (zh) * | 2020-12-30 | 2023-02-21 | 浙江启尔机电技术有限公司 | 真空系统及使用该真空系统的浸没式光刻机 |
| CN113083530B (zh) * | 2021-03-01 | 2022-08-16 | 武汉大学 | 一种中心体位置可连续调节的空化喷嘴 |
| CN115818565A (zh) * | 2022-11-17 | 2023-03-21 | 浙江大学医学院附属第四医院 | 一种对微纳米颗粒进行富集、分选的装置和方法 |
| CN116586370A (zh) * | 2023-06-07 | 2023-08-15 | 山东省计量科学研究院 | 一种高准确度砝码自动清洗装置及其工作方法 |
| CN119608675B (zh) * | 2025-02-13 | 2025-04-18 | 厦门银科启瑞半导体科技有限公司 | 一种晶圆清洗设备及其清洗方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
| US20050225734A1 (en) * | 2004-04-08 | 2005-10-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060028628A1 (en) * | 2004-08-03 | 2006-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lens cleaning module |
| US20060050256A1 (en) * | 2004-09-03 | 2006-03-09 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method, and device manufacturing method |
| US20070091287A1 (en) * | 2005-10-24 | 2007-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
Family Cites Families (214)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
| EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
| FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
| JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| US4405701A (en) | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS6265326U (enExample) | 1985-10-16 | 1987-04-23 | ||
| JPS62121417U (enExample) | 1986-01-24 | 1987-08-01 | ||
| JPS63157419U (enExample) | 1987-03-31 | 1988-10-14 | ||
| US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
| JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
| US5039349A (en) * | 1990-05-18 | 1991-08-13 | Veriflo Corporation | Method and apparatus for cleaning surfaces to absolute or near-absolute cleanliness |
| US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6297871B1 (en) | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
| US6104687A (en) * | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH1133506A (ja) | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
| JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| WO1999027568A1 (en) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11162831A (ja) | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| AU1505699A (en) | 1997-12-12 | 1999-07-05 | Nikon Corporation | Projection exposure method and projection aligner |
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
| JP2000323396A (ja) | 1999-05-13 | 2000-11-24 | Canon Inc | 露光方法、露光装置、およびデイバイス製造方法 |
| JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
| JP3704260B2 (ja) | 1999-09-22 | 2005-10-12 | 大日本スクリーン製造株式会社 | 基板洗浄装置および基板洗浄方法 |
| TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
| JP4352598B2 (ja) * | 2000-08-24 | 2009-10-28 | ソニー株式会社 | 液晶表示装置および携帯端末 |
| SE519629C2 (sv) * | 2000-11-20 | 2003-03-18 | Abb Ab | Förfarande och anordning för styrning av roterande maskin samt regleringsenhet och motorsystem |
| JP3453366B2 (ja) * | 2001-01-25 | 2003-10-06 | 株式会社半導体先端テクノロジーズ | 基板の洗浄装置および洗浄方法 |
| US20020104454A1 (en) | 2001-02-06 | 2002-08-08 | Eric Verschueren | Apparatus for cleaning a surface |
| US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
| US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
| WO2003040830A2 (en) * | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Optical spot grid array printer |
| US7014956B2 (en) * | 2002-01-04 | 2006-03-21 | Intel Corporation | Active secondary exposure mask to manufacture integrated circuits |
| DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| US6932899B2 (en) * | 2002-09-10 | 2005-08-23 | Stealth Industries Ltd. | Pool skimmer basket kit |
| US7240679B2 (en) | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR101060983B1 (ko) | 2002-12-03 | 2011-08-31 | 가부시키가이샤 니콘 | 오염 물질 제거 방법 및 장치, 그리고 노광 방법 및 장치 |
| AU2003302830A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| EP1571695A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
| WO2004053954A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
| JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
| EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
| WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
| KR20110086130A (ko) | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1571698A4 (en) | 2002-12-10 | 2006-06-21 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
| EP1573730B1 (en) | 2002-12-13 | 2009-02-25 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
| EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US7399978B2 (en) | 2002-12-19 | 2008-07-15 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| KR101745223B1 (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| EP2667253B1 (en) | 2003-04-10 | 2015-06-10 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
| WO2004093160A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
| SG10201603067VA (en) | 2003-04-11 | 2016-05-30 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| SG189557A1 (en) | 2003-04-11 | 2013-05-31 | Nikon Corp | Cleanup method for optics in immersion lithography |
| ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
| DE10318238B4 (de) | 2003-04-23 | 2007-02-01 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Reinigen von Innenflächen von Gewindebohrungen |
| TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI503865B (zh) | 2003-05-23 | 2015-10-11 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| US7274472B2 (en) * | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
| DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
| US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2466382B1 (en) | 2003-07-08 | 2014-11-26 | Nikon Corporation | Wafer table for immersion lithography |
| SG109000A1 (en) * | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US20070132969A1 (en) * | 2003-07-24 | 2007-06-14 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and method for introducing an immersion liquid into an immersion space |
| US7370659B2 (en) | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| KR20050017142A (ko) * | 2003-08-08 | 2005-02-22 | 삼성전자주식회사 | 린스 용액 및 이를 이용한 반도체 소자 세정 방법 |
| JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR101371917B1 (ko) | 2003-09-03 | 2014-03-07 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP3870182B2 (ja) * | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP4438747B2 (ja) * | 2003-09-26 | 2010-03-24 | 株式会社ニコン | 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法 |
| WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
| US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
| JP4295712B2 (ja) * | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置製造方法 |
| JP2005175016A (ja) * | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
| JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| EP1700164B1 (en) * | 2003-12-23 | 2010-08-04 | Koninklijke Philips Electronics N.V. | Irradiation method |
| US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| JP2005191381A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| JP2005191393A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| WO2005071491A2 (en) * | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
| JP2007520893A (ja) | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4018647B2 (ja) * | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| JP2005286068A (ja) * | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
| JP4510494B2 (ja) * | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
| US20050250054A1 (en) | 2004-05-10 | 2005-11-10 | Ching-Yu Chang | Development of photolithographic masks for semiconductors |
| US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| EP1768169B9 (en) | 2004-06-04 | 2013-03-06 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
| KR101433496B1 (ko) | 2004-06-09 | 2014-08-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
| DE102004033208B4 (de) * | 2004-07-09 | 2010-04-01 | Vistec Semiconductor Systems Gmbh | Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv |
| US7307263B2 (en) | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
| JP2006032750A (ja) | 2004-07-20 | 2006-02-02 | Canon Inc | 液浸型投影露光装置、及びデバイス製造方法 |
| US20060027248A1 (en) | 2004-08-09 | 2006-02-09 | Applied Materials, Inc. | Megasonic cleaning with minimized interference |
| US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006063201A (ja) | 2004-08-27 | 2006-03-09 | Sanyo Chem Ind Ltd | 洗浄剤 |
| JP4772306B2 (ja) * | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| TW200628995A (en) | 2004-10-13 | 2006-08-16 | Nikon Corp | Exposure device, exposure method, and device manufacturing method |
| JP2006120674A (ja) * | 2004-10-19 | 2006-05-11 | Canon Inc | 露光装置及び方法、デバイス製造方法 |
| JP2006134999A (ja) | 2004-11-04 | 2006-05-25 | Sony Corp | 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法 |
| JP2006133661A (ja) * | 2004-11-09 | 2006-05-25 | Minebea Co Ltd | カラーホイールおよびその製造方法と製造用治具 |
| US7414699B2 (en) * | 2004-11-12 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
| WO2006059636A1 (ja) * | 2004-12-02 | 2006-06-08 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4784513B2 (ja) * | 2004-12-06 | 2011-10-05 | 株式会社ニコン | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7234452B2 (en) * | 2004-12-20 | 2007-06-26 | Eaton Corporation | Controlling vapor emission in a small engine fuel tank system |
| JP2006210408A (ja) | 2005-01-25 | 2006-08-10 | Nikon Corp | 投影光学系の検査装置、及び投影光学系の製造方法 |
| JP2006210782A (ja) * | 2005-01-31 | 2006-08-10 | Jsr Corp | 液浸露光用液体および液浸露光方法 |
| JP2006310706A (ja) | 2005-05-02 | 2006-11-09 | Nikon Corp | 光学部品の洗浄方法、液浸投影露光装置および露光方法 |
| US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
| US7315033B1 (en) * | 2005-05-04 | 2008-01-01 | Advanced Micro Devices, Inc. | Method and apparatus for reducing biological contamination in an immersion lithography system |
| WO2006122578A1 (en) | 2005-05-17 | 2006-11-23 | Freescale Semiconductor, Inc. | Contaminant removal apparatus and method therefor |
| JP4255459B2 (ja) | 2005-06-15 | 2009-04-15 | 大日本スクリーン製造株式会社 | 基板洗浄装置および基板洗浄方法 |
| US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
| US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
| US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
| US7262422B2 (en) * | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| DE102005031792A1 (de) | 2005-07-07 | 2007-01-11 | Carl Zeiss Smt Ag | Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür |
| JP2007029973A (ja) | 2005-07-25 | 2007-02-08 | Sony Corp | レーザ加工装置とその加工方法及びデブリ回収装置とその回収方法 |
| JP4752374B2 (ja) * | 2005-07-27 | 2011-08-17 | 株式会社ニコン | 露光装置、液体保持方法、及びデバイス製造方法 |
| JP4687334B2 (ja) * | 2005-08-29 | 2011-05-25 | Ｊｓｒ株式会社 | 液浸露光用液体および液浸露光方法 |
| JP2007096254A (ja) * | 2005-08-31 | 2007-04-12 | Nikon Corp | 露光装置及びマイクロデバイスの製造方法 |
| JP2007088328A (ja) | 2005-09-26 | 2007-04-05 | Toshiba Corp | 液浸型露光装置の洗浄方法 |
| JP2007103658A (ja) * | 2005-10-04 | 2007-04-19 | Canon Inc | 露光方法および装置ならびにデバイス製造方法 |
| CN1963673A (zh) | 2005-11-11 | 2007-05-16 | 台湾积体电路制造股份有限公司 | 浸润式微影曝光设备及方法 |
| JP2007142217A (ja) | 2005-11-18 | 2007-06-07 | Taiwan Semiconductor Manufacturing Co Ltd | イマージョン式リソグラフィ露光装置およびその方法 |
| JP2007150102A (ja) | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7462850B2 (en) | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
| US7405417B2 (en) * | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
| US20070146658A1 (en) * | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US7522263B2 (en) * | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP4704221B2 (ja) * | 2006-01-26 | 2011-06-15 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置および基板処理方法 |
| JP2007227543A (ja) | 2006-02-22 | 2007-09-06 | Toshiba Corp | 液浸光学装置、洗浄方法及び液浸露光方法 |
| JP2007227580A (ja) | 2006-02-23 | 2007-09-06 | Sony Corp | 液浸型露光装置および液浸型露光方法 |
| KR20080114691A (ko) | 2006-03-13 | 2008-12-31 | 가부시키가이샤 니콘 | 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법 |
| JP2007266074A (ja) | 2006-03-27 | 2007-10-11 | Toshiba Corp | 半導体装置の製造方法及び液浸リソグラフィーシステム |
| JP2007294817A (ja) | 2006-04-27 | 2007-11-08 | Sokudo:Kk | 基板処理方法、基板処理システムおよび基板処理装置 |
| US7628865B2 (en) | 2006-04-28 | 2009-12-08 | Asml Netherlands B.V. | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
| WO2007135990A1 (ja) | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| JP5019170B2 (ja) | 2006-05-23 | 2012-09-05 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
| JP2007317987A (ja) | 2006-05-29 | 2007-12-06 | Sokudo:Kk | 基板処理装置および基板処理方法 |
| US20090025804A1 (en) * | 2006-06-12 | 2009-01-29 | Anthony Caminiti | Cleaning related apparatus |
| US8564759B2 (en) * | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| KR20090033170A (ko) | 2006-06-30 | 2009-04-01 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법 |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7841352B2 (en) | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US8011377B2 (en) * | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| US7916269B2 (en) * | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー．ブイ． | クリーニング装置および液浸リソグラフィ装置 |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) * | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| US8339572B2 (en) * | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8654306B2 (en) | 2008-04-14 | 2014-02-18 | Nikon Corporation | Exposure apparatus, cleaning method, and device fabricating method |
| NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
-
2007
- 2007-06-29 US US11/819,954 patent/US7841352B2/en active Active
- 2007-06-29 US US11/819,949 patent/US9013672B2/en not_active Expired - Fee Related
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
| US20050225734A1 (en) * | 2004-04-08 | 2005-10-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060028628A1 (en) * | 2004-08-03 | 2006-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lens cleaning module |
| US20060050256A1 (en) * | 2004-09-03 | 2006-03-09 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method, and device manufacturing method |
| US20070091287A1 (en) * | 2005-10-24 | 2007-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011097108A (ja) | 2011-05-12 |
| US9013672B2 (en) | 2015-04-21 |
| JP2011238940A (ja) | 2011-11-24 |
| JP5036885B2 (ja) | 2012-09-26 |
| JP5323894B2 (ja) | 2013-10-23 |
| JP5198624B2 (ja) | 2013-05-15 |
| JP2008300824A (ja) | 2008-12-11 |
| JP4686571B2 (ja) | 2011-05-25 |
| US7841352B2 (en) | 2010-11-30 |
| US7900641B2 (en) | 2011-03-08 |
| TW200845129A (en) | 2008-11-16 |
| JP5097843B2 (ja) | 2012-12-12 |
| JP2011187971A (ja) | 2011-09-22 |
| JP4912352B2 (ja) | 2012-04-11 |
| JP4908454B2 (ja) | 2012-04-04 |
| JP2008277819A (ja) | 2008-11-13 |
| KR101024566B1 (ko) | 2011-03-31 |
| KR20080098324A (ko) | 2008-11-07 |
| CN101299133B (zh) | 2012-07-25 |
| JP2011238939A (ja) | 2011-11-24 |
| US20080273181A1 (en) | 2008-11-06 |
| KR20100039311A (ko) | 2010-04-15 |
| TW201234414A (en) | 2012-08-16 |
| CN101299133A (zh) | 2008-11-05 |
| US20080271750A1 (en) | 2008-11-06 |
| JP2008294439A (ja) | 2008-12-04 |
| US20080271747A1 (en) | 2008-11-06 |
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