JP4908454B2 - 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 - Google Patents
洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 Download PDFInfo
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- JP4908454B2 JP4908454B2 JP2008120654A JP2008120654A JP4908454B2 JP 4908454 B2 JP4908454 B2 JP 4908454B2 JP 2008120654 A JP2008120654 A JP 2008120654A JP 2008120654 A JP2008120654 A JP 2008120654A JP 4908454 B2 JP4908454 B2 JP 4908454B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
Claims (16)
- 液浸リソグラフィ装置内部の対象物を洗浄する装置であって、前記対象物は、基板を支持する基板テーブルの1つまたは複数の部品、結像中に液浸液に浸される投影系の末端要素、及び/または、投影系の末端要素と基板との間に結像中に液体を供給する液体閉じ込めシステムであり、
液浸リソグラフィ装置の前記対象物の表面を洗浄するメガソニックトランスデューサと、
メガソニックトランスデューサと洗浄対象表面との間に液体を供給する液体供給システムと、
洗浄対象表面に近接し、流出洗浄液を排出する洗浄液排出口と、を備え、
前記排出口は、前記洗浄対象表面に対向して前記メガソニックトランスデューサに設けられていることを特徴とする装置。 - 前記メガソニックトランスデューサは、その周囲に気液界面を有して前記洗浄対象表面に対向して配置されていることを特徴とする請求項1に記載の装置。
- 前記排出口は洗浄対象表面のうち洗浄中の領域に接続されることを特徴とする請求項1に記載の装置。
- 使用時において洗浄中の領域から汚染物質が液体流れへともたらされ、該液体流れは該洗浄中の領域を越えて前記排出口へと流れることで該液体流れの汚染物質濃度は前記排出口に向けて増大するように構成されていることを特徴とする請求項3に記載の装置。
- 前記排出口は前記トランスデューサに包囲される部位に設けられていることを特徴とする請求項1に記載の装置。
- 最も液体が汚染された領域へと向かう液体流れを使用時に生成するよう構成されていることを特徴とする請求項1に記載の装置。
- 液体流れは放射状であることを特徴とする請求項5に記載の装置。
- 汚染物質濃度がより高い液体の領域へと向かう液体流れを使用時に生成するよう構成されていることを特徴とする請求項1に記載の装置。
- 前記領域は、メガソニックトランスデューサと洗浄対象表面との間に位置することを特徴とする請求項8に記載の装置。
- 洗浄対象表面上の一領域へと向かう液体流れを使用時に生成し、該液体流れが前記洗浄対象表面の前記一領域を通過して前記排出口に向かうように構成されていることを特徴とする請求項1に記載の装置。
- メガソニックトランスデューサと洗浄対象表面との間に液体流れがあることを特徴とする請求項1に記載の装置。
- 請求項1から11のいずれかに記載の装置を備えることを特徴とするリソグラフィ装置。
- 液浸リソグラフィ装置であって、
基板を保持する基板テーブルと、
パターンが付与された放射ビームを基板に投影する投影系と、
前記液浸リソグラフィ装置内部の対象物の表面を洗浄するメガソニックトランスデューサと、
メガソニックトランスデューサと洗浄対象表面との間に液体を供給する液体供給システムと、
洗浄対象表面に近接する洗浄液排出口であって、前記メガソニックトランスデューサと前記メガソニックトランスデューサに対向して設けられた前記洗浄対象表面との間の液体領域から洗浄液を直接排出するための排出口と、を備え、前記液体領域にはメガソニック波が導入され、
前記対象物は、基板を支持する基板テーブルの1つまたは複数の部品、結像中に液浸液に浸される投影系の末端要素、及び/または、投影系の末端要素と基板との間に結像中に液体を供給する液体閉じ込めシステムであることを特徴とする装置。 - メガソニックトランスデューサから発せられるメガソニック波を使用して液浸リソグラフィ装置内部の対象物の表面を洗浄する方法であって、前記対象物は、基板を支持する基板テーブルの1つまたは複数の部品、結像中に液浸液に浸される投影系の末端要素、及び/または、投影系の末端要素と基板との間に結像中に液体を供給する液体閉じ込めシステムであり、
洗浄対象表面とメガソニックトランスデューサの表面とを液体で覆うことと、
該液体にメガソニック波を導入することと、
洗浄対象表面に隣接する液体排出口を通じて液体を排出することと、を含み、
前記排出口は、前記洗浄対象表面に対向して前記メガソニックトランスデューサに設けられていることを特徴とする方法。 - メガソニックトランスデューサから発せられるメガソニック波を使用して液浸リソグラフィ装置内部の対象物の表面を洗浄する方法であって、前記対象物は、基板を支持する基板テーブルの1つまたは複数の部品、結像中に液浸液に浸される投影系の末端要素、及び/または、投影系の末端要素と基板との間に結像中に液体を供給する液体閉じ込めシステムであり、
洗浄対象表面とメガソニックトランスデューサの表面とを液体で覆うことと、
該液体にメガソニック波を導入することと、
洗浄対象表面に隣接する液体排出口を通じて、メガソニック波の導入領域から液体を直接排出することと、を含むことを特徴とする方法。 - 前記排出において液体に放射状流れが誘起されることを特徴とする請求項14または15に記載の方法。
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US92424407P | 2007-05-04 | 2007-05-04 | |
US60/924,244 | 2007-05-04 | ||
US11/819,949 | 2007-06-29 | ||
US11/819,949 US9013672B2 (en) | 2007-05-04 | 2007-06-29 | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
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JP2011134129A Division JP5198624B2 (ja) | 2007-05-04 | 2011-06-16 | 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 |
JP2011134159A Division JP5323894B2 (ja) | 2007-05-04 | 2011-06-16 | リソグラフィ装置洗浄方法 |
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JP2008300824A JP2008300824A (ja) | 2008-12-11 |
JP4908454B2 true JP4908454B2 (ja) | 2012-04-04 |
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JP2008114096A Active JP4686571B2 (ja) | 2007-05-04 | 2008-04-24 | クリーニングデバイス、リソグラフィ装置およびリソグラフィ装置のクリーニング方法 |
JP2008120668A Expired - Fee Related JP4912352B2 (ja) | 2007-05-04 | 2008-05-02 | 洗浄装置及びリソグラフィ装置洗浄方法 |
JP2008120654A Expired - Fee Related JP4908454B2 (ja) | 2007-05-04 | 2008-05-02 | 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 |
JP2011028118A Active JP5036885B2 (ja) | 2007-05-04 | 2011-02-14 | クリーニングツール、リソグラフィ装置 |
JP2011093700A Expired - Fee Related JP5097843B2 (ja) | 2007-05-04 | 2011-04-20 | 洗浄装置及びリソグラフィ装置洗浄方法 |
JP2011134159A Expired - Fee Related JP5323894B2 (ja) | 2007-05-04 | 2011-06-16 | リソグラフィ装置洗浄方法 |
JP2011134129A Expired - Fee Related JP5198624B2 (ja) | 2007-05-04 | 2011-06-16 | 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 |
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JP2008120668A Expired - Fee Related JP4912352B2 (ja) | 2007-05-04 | 2008-05-02 | 洗浄装置及びリソグラフィ装置洗浄方法 |
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JP2011093700A Expired - Fee Related JP5097843B2 (ja) | 2007-05-04 | 2011-04-20 | 洗浄装置及びリソグラフィ装置洗浄方法 |
JP2011134159A Expired - Fee Related JP5323894B2 (ja) | 2007-05-04 | 2011-06-16 | リソグラフィ装置洗浄方法 |
JP2011134129A Expired - Fee Related JP5198624B2 (ja) | 2007-05-04 | 2011-06-16 | 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法 |
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JP (7) | JP4686571B2 (ja) |
KR (2) | KR101024566B1 (ja) |
CN (1) | CN101299133B (ja) |
TW (2) | TWI385711B (ja) |
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JP5198624B2 (ja) | 2013-05-15 |
KR20100039311A (ko) | 2010-04-15 |
JP5097843B2 (ja) | 2012-12-12 |
JP5323894B2 (ja) | 2013-10-23 |
TW201234414A (en) | 2012-08-16 |
JP4912352B2 (ja) | 2012-04-11 |
JP4686571B2 (ja) | 2011-05-25 |
US20080273181A1 (en) | 2008-11-06 |
JP2011238940A (ja) | 2011-11-24 |
TWI385711B (zh) | 2013-02-11 |
JP2011238939A (ja) | 2011-11-24 |
KR20080098324A (ko) | 2008-11-07 |
JP2008277819A (ja) | 2008-11-13 |
JP2008294439A (ja) | 2008-12-04 |
JP2011097108A (ja) | 2011-05-12 |
US7841352B2 (en) | 2010-11-30 |
US7900641B2 (en) | 2011-03-08 |
TW200845129A (en) | 2008-11-16 |
JP2011187971A (ja) | 2011-09-22 |
US20080271750A1 (en) | 2008-11-06 |
CN101299133B (zh) | 2012-07-25 |
US9013672B2 (en) | 2015-04-21 |
US20080271747A1 (en) | 2008-11-06 |
JP5036885B2 (ja) | 2012-09-26 |
KR101024566B1 (ko) | 2011-03-31 |
CN101299133A (zh) | 2008-11-05 |
JP2008300824A (ja) | 2008-12-11 |
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