TWI373798B - - Google Patents
Download PDFInfo
- Publication number
- TWI373798B TWI373798B TW093102927A TW93102927A TWI373798B TW I373798 B TWI373798 B TW I373798B TW 093102927 A TW093102927 A TW 093102927A TW 93102927 A TW93102927 A TW 93102927A TW I373798 B TWI373798 B TW I373798B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- ring member
- ceramic
- group
- member according
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 165
- 239000000919 ceramic Substances 0.000 claims description 159
- 238000012545 processing Methods 0.000 claims description 132
- 239000010410 layer Substances 0.000 claims description 125
- 230000008569 process Effects 0.000 claims description 120
- 238000011282 treatment Methods 0.000 claims description 116
- 239000000758 substrate Substances 0.000 claims description 107
- 230000004888 barrier function Effects 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 47
- 238000007789 sealing Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 230000000737 periodic effect Effects 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 30
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000005507 spraying Methods 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 23
- 229910000421 cerium(III) oxide Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 229910052779 Neodymium Inorganic materials 0.000 claims description 18
- 229910052727 yttrium Inorganic materials 0.000 claims description 18
- 229910052726 zirconium Inorganic materials 0.000 claims description 18
- 229910052791 calcium Inorganic materials 0.000 claims description 17
- 229910052804 chromium Inorganic materials 0.000 claims description 17
- 239000007921 spray Substances 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 229910020187 CeF3 Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 229910003465 moissanite Inorganic materials 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 11
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 238000003980 solgel method Methods 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- 229910009527 YF3 Inorganic materials 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229920006351 engineering plastic Polymers 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910009454 Y(OH)3 Inorganic materials 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 195
- 239000007789 gas Substances 0.000 description 108
- 238000006703 hydration reaction Methods 0.000 description 65
- 230000036571 hydration Effects 0.000 description 63
- 150000002500 ions Chemical class 0.000 description 24
- 230000000694 effects Effects 0.000 description 18
- 238000004140 cleaning Methods 0.000 description 17
- 239000007788 liquid Substances 0.000 description 17
- 238000012546 transfer Methods 0.000 description 17
- 239000011148 porous material Substances 0.000 description 15
- 239000002585 base Substances 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 13
- 239000004693 Polybenzimidazole Substances 0.000 description 12
- 229920002480 polybenzimidazole Polymers 0.000 description 12
- 229910052580 B4C Inorganic materials 0.000 description 10
- -1 Ta02 Inorganic materials 0.000 description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 229920002312 polyamide-imide Polymers 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 8
- 239000004697 Polyetherimide Substances 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229920001601 polyetherimide Polymers 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 7
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 229920002873 Polyethylenimine Polymers 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000003618 dip coating Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 2
- 239000011225 non-oxide ceramic Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical compound C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003031278 | 2003-02-07 | ||
| JP2003398334A JP4503270B2 (ja) | 2002-11-28 | 2003-11-28 | プラズマ処理容器内部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200501253A TW200501253A (en) | 2005-01-01 |
| TWI373798B true TWI373798B (enExample) | 2012-10-01 |
Family
ID=34315569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093102927A TW200501253A (en) | 2003-02-07 | 2004-02-09 | Plasma processing apparatus, ring component and plasma processing method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20050103275A1 (enExample) |
| KR (1) | KR100540051B1 (enExample) |
| CN (1) | CN100418187C (enExample) |
| TW (1) | TW200501253A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12125672B2 (en) | 2019-07-16 | 2024-10-22 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US12247296B2 (en) | 2018-07-18 | 2025-03-11 | Nhk Spring Co., Ltd. | Member for plasma processing device |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| EP1375118A4 (en) * | 2001-03-29 | 2004-09-01 | Bridgestone Corp | TAPE RUBBER, METHOD AND APPARATUS FOR MANUFACTURING A TIRE, AND TIRE ELEMENT USING TAPE RUBBER |
| TWI246873B (en) * | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
| US6955725B2 (en) | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
| US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
| US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
| US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| US7780786B2 (en) * | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
| EP1465468B1 (en) * | 2003-03-31 | 2007-11-14 | SANYO ELECTRIC Co., Ltd. | Metal mask and method of printing lead-free solder paste using same |
| JP4597972B2 (ja) | 2003-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 処理部材上に隣接するコーティングを接合する方法。 |
| WO2004095532A2 (en) * | 2003-03-31 | 2004-11-04 | Tokyo Electron Limited | A barrier layer for a processing element and a method of forming the same |
| US6843870B1 (en) * | 2003-07-22 | 2005-01-18 | Epic Biosonics Inc. | Implantable electrical cable and method of making |
| US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
| US20050193951A1 (en) * | 2004-03-08 | 2005-09-08 | Muneo Furuse | Plasma processing apparatus |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US7988816B2 (en) | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4666576B2 (ja) * | 2004-11-08 | 2011-04-06 | 東京エレクトロン株式会社 | セラミック溶射部材の洗浄方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材 |
| JP4666575B2 (ja) * | 2004-11-08 | 2011-04-06 | 東京エレクトロン株式会社 | セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材 |
| US20060102080A1 (en) * | 2004-11-12 | 2006-05-18 | Advanced Ion Beam Technology, Inc. | Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities |
| US7552521B2 (en) | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
| US7601242B2 (en) | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
| JP4849829B2 (ja) * | 2005-05-15 | 2012-01-11 | 株式会社ソニー・コンピュータエンタテインメント | センタ装置 |
| WO2007023976A1 (ja) * | 2005-08-22 | 2007-03-01 | Tocalo Co., Ltd. | 耐損傷性等に優れる溶射皮膜被覆部材およびその製造方法 |
| WO2007023971A1 (ja) * | 2005-08-22 | 2007-03-01 | Tocalo Co., Ltd. | 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法 |
| JP4571561B2 (ja) * | 2005-09-08 | 2010-10-27 | トーカロ株式会社 | 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法 |
| US8034180B2 (en) | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
| US8092638B2 (en) * | 2005-10-11 | 2012-01-10 | Applied Materials Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
| US8021521B2 (en) | 2005-10-20 | 2011-09-20 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
| JP4827081B2 (ja) * | 2005-12-28 | 2011-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
| US7648782B2 (en) * | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US7850864B2 (en) * | 2006-03-20 | 2010-12-14 | Tokyo Electron Limited | Plasma treating apparatus and plasma treating method |
| JP4643478B2 (ja) * | 2006-03-20 | 2011-03-02 | トーカロ株式会社 | 半導体加工装置用セラミック被覆部材の製造方法 |
| JP5014656B2 (ja) * | 2006-03-27 | 2012-08-29 | 国立大学法人東北大学 | プラズマ処理装置用部材およびその製造方法 |
| US20070234955A1 (en) * | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
| US20080105203A1 (en) * | 2006-09-28 | 2008-05-08 | Tokyo Electron Limited | Component for substrate processing apparatus and method of forming film on the component |
| JP2010017081A (ja) * | 2006-10-10 | 2010-01-28 | Ajinomoto Co Inc | Ｌ−アミノ酸の製造法 |
| US8941037B2 (en) * | 2006-12-25 | 2015-01-27 | Tokyo Electron Limited | Substrate processing apparatus, focus ring heating method, and substrate processing method |
| JP4833890B2 (ja) * | 2007-03-12 | 2011-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ分布補正方法 |
| JP2008251866A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
| JP4936297B2 (ja) * | 2007-09-04 | 2012-05-23 | シャープ株式会社 | プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 |
| KR101486553B1 (ko) * | 2008-03-20 | 2015-01-26 | 주식회사 원익아이피에스 | 진공처리장치 |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
| US8734664B2 (en) | 2008-07-23 | 2014-05-27 | Applied Materials, Inc. | Method of differential counter electrode tuning in an RF plasma reactor |
| JP5295833B2 (ja) * | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
| US8185166B2 (en) * | 2008-10-24 | 2012-05-22 | Apple Inc. | Thermal spray coating for seamless and radio-transparent electronic device housing |
| KR101293434B1 (ko) * | 2008-12-02 | 2013-08-05 | 가부시키가이샤 고베 세이코쇼 | 플라즈마 처리 장치용 부재 및 그의 제조방법 |
| JP5394403B2 (ja) * | 2009-01-09 | 2014-01-22 | 株式会社アルバック | プラズマ処理装置 |
| JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2010232476A (ja) * | 2009-03-27 | 2010-10-14 | Tokyo Electron Ltd | プラズマ処理装置 |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
| US9299539B2 (en) * | 2009-08-21 | 2016-03-29 | Lam Research Corporation | Method and apparatus for measuring wafer bias potential |
| KR101430635B1 (ko) * | 2010-10-06 | 2014-08-18 | 한국전자통신연구원 | 하전입자빔 생성에 사용되는 타겟 구조체, 그 제조 방법 및 이를 이용한 의료 기구 |
| JP5741921B2 (ja) * | 2011-04-08 | 2015-07-01 | 株式会社日立国際電気 | 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法 |
| TWI535660B (zh) | 2011-05-27 | 2016-06-01 | 尼康股份有限公司 | CaF 2 Polycrystalline, focusing ring, plasma processing device and CaF 2 Polymorphic manufacturing method |
| US8562785B2 (en) * | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
| CN103620744B (zh) * | 2011-05-31 | 2017-09-29 | 应用材料公司 | 用于带有边缘、侧边及背面保护的干蚀刻的装置及方法 |
| US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
| CN103165494B (zh) * | 2011-12-08 | 2015-12-09 | 中微半导体设备(上海)有限公司 | 一种清洁晶片背面聚合物的装置和方法 |
| US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
| KR102059221B1 (ko) * | 2012-07-05 | 2019-12-24 | 가부시키가이샤 니콘 | 다결정 CaF2 부재, 플라즈마 처리 장치용 부재, 플라즈마 처리 장치 및 포커스 링의 제조 방법 |
| JP2014154866A (ja) * | 2013-02-14 | 2014-08-25 | Fujifilm Corp | ドライエッチング装置及びドライエッチング装置用のクランプ |
| US20140374901A1 (en) * | 2013-06-21 | 2014-12-25 | Samsung Electronics Co., Ltd | Semiconductor package and method of fabricating the same |
| CN106104775B (zh) * | 2014-01-31 | 2019-05-21 | 应用材料公司 | 腔室涂层 |
| CN105428195B (zh) * | 2014-09-17 | 2018-07-17 | 东京毅力科创株式会社 | 等离子体处理装置用的部件和部件的制造方法 |
| CN106716619B (zh) * | 2014-09-30 | 2020-09-15 | 住友大阪水泥股份有限公司 | 静电吸盘装置 |
| JP6423706B2 (ja) * | 2014-12-16 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| US11572617B2 (en) | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
| US11127619B2 (en) * | 2016-06-07 | 2021-09-21 | Applied Materials, Inc. | Workpiece carrier for high power with enhanced edge sealing |
| KR101949406B1 (ko) * | 2016-07-07 | 2019-02-20 | 세메스 주식회사 | 기판 처리 장치 |
| JP6146841B1 (ja) * | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | リング状電極 |
| JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| CN108074787A (zh) * | 2016-11-10 | 2018-05-25 | 北京北方华创微电子装备有限公司 | 下电极结构及半导体加工设备 |
| US20180327892A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films for chamber components |
| JP6797079B2 (ja) * | 2017-06-06 | 2020-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
| JP6851270B2 (ja) * | 2017-06-16 | 2021-03-31 | 東京エレクトロン株式会社 | 静電吸着方法 |
| JP6906377B2 (ja) * | 2017-06-23 | 2021-07-21 | 東京エレクトロン株式会社 | 排気プレート及びプラズマ処理装置 |
| KR101980203B1 (ko) * | 2017-10-30 | 2019-05-21 | 세메스 주식회사 | 지지 유닛 및 그를 포함하는 기판 처리 장치 |
| PL3711081T3 (pl) * | 2017-11-17 | 2024-08-19 | Aes Global Holdings, Pte. Ltd. | Przestrzenne i czasowe sterowanie napięciem polaryzacji jonów do przetwarzania plazmowego |
| JP2019160714A (ja) * | 2018-03-16 | 2019-09-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP7115942B2 (ja) * | 2018-09-06 | 2022-08-09 | 東京エレクトロン株式会社 | 載置台、基板処理装置、エッジリング及びエッジリングの搬送方法 |
| JP7140610B2 (ja) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | プラズマ処理装置 |
| US11289310B2 (en) * | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| JP7234036B2 (ja) * | 2019-05-28 | 2023-03-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
| JP7398909B2 (ja) * | 2019-09-12 | 2023-12-15 | 東京エレクトロン株式会社 | 静電吸着方法及びプラズマ処理装置 |
| US11456159B2 (en) * | 2019-10-25 | 2022-09-27 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Plasma processing system |
| CN113097097A (zh) * | 2019-12-23 | 2021-07-09 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀装置及其工作方法 |
| US12033838B2 (en) * | 2020-03-24 | 2024-07-09 | Tokyo Electron Limited | Plasma processing apparatus and wear amount measurement method |
| JP7661109B2 (ja) * | 2020-07-31 | 2025-04-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| TW202217957A (zh) * | 2020-09-09 | 2022-05-01 | 日商三菱綜合材料股份有限公司 | 耐電漿塗覆膜、形成該膜用之溶膠凝膠液、耐電漿塗覆膜之形成方法及附耐電漿塗覆膜之基材 |
| CN112652515B (zh) * | 2020-12-09 | 2023-08-15 | 长江存储科技有限责任公司 | 等离子体刻蚀装置及其边缘环 |
| KR102622984B1 (ko) * | 2021-08-25 | 2024-01-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP7583698B2 (ja) * | 2021-10-08 | 2024-11-14 | 日本碍子株式会社 | ウエハ載置台 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357387A (en) * | 1981-08-20 | 1982-11-02 | Subtex, Inc. | Flame resistant insulating fabric compositions prepared by plasma spraying |
| JPH04279044A (ja) | 1991-01-09 | 1992-10-05 | Sumitomo Metal Ind Ltd | 試料保持装置 |
| JPH0570922A (ja) | 1991-08-09 | 1993-03-23 | Koichi Moriya | 複合材の無機化合物による封孔処理法 |
| JPH0611346A (ja) | 1992-06-25 | 1994-01-21 | Fujita Corp | 自動測量システム |
| JPH0658163A (ja) * | 1992-08-08 | 1994-03-01 | Mazda Motor Corp | ロータリピストンエンジン |
| JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
| JPH07226395A (ja) * | 1994-02-15 | 1995-08-22 | Matsushita Electric Ind Co Ltd | 真空プラズマ処理装置 |
| JPH08162444A (ja) * | 1994-12-08 | 1996-06-21 | Tokyo Electron Ltd | プラズマ処理装置及びその制御方法 |
| JP3220619B2 (ja) * | 1995-05-24 | 2001-10-22 | 松下電器産業株式会社 | ガス伝熱プラズマ処理装置 |
| JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JPH0975832A (ja) | 1995-09-11 | 1997-03-25 | Nittetsu Hard Kk | 耐食耐摩耗性表面溶射層を有するボイラーチューブ |
| JP3371646B2 (ja) * | 1995-10-20 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
| JPH09298190A (ja) | 1996-05-02 | 1997-11-18 | Iwaki Coating Kogyo:Kk | ドライエッチング装置用電極の製造方法 |
| US5925228A (en) * | 1997-01-09 | 1999-07-20 | Sandia Corporation | Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material |
| JPH10277707A (ja) | 1997-04-03 | 1998-10-20 | Mishima Kosan Co Ltd | 連続鋳造用鋳型に使用する鋳型片及びその製造方法 |
| US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
| US5897752A (en) * | 1997-05-20 | 1999-04-27 | Applied Materials, Inc. | Wafer bias ring in a sustained self-sputtering reactor |
| JP2000164583A (ja) | 1998-06-24 | 2000-06-16 | Hitachi Ltd | プラズマ処理装置およびプラズマ処理方法 |
| JP3066007B2 (ja) | 1998-06-24 | 2000-07-17 | 株式会社日立製作所 | プラズマ処理装置およびプラズマ処理方法 |
| US6284149B1 (en) * | 1998-09-18 | 2001-09-04 | Applied Materials, Inc. | High-density plasma etching of carbon-based low-k materials in a integrated circuit |
| JP4136137B2 (ja) | 1998-11-26 | 2008-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4119551B2 (ja) * | 1998-12-01 | 2008-07-16 | 東京エレクトロン株式会社 | 基板保持台、及びプラズマ処理装置 |
| JP2000183038A (ja) * | 1998-12-14 | 2000-06-30 | Hitachi Ltd | プラズマ処理装置 |
| KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| JP4272786B2 (ja) | 2000-01-21 | 2009-06-03 | トーカロ株式会社 | 静電チャック部材およびその製造方法 |
| JP3632542B2 (ja) * | 2000-01-26 | 2005-03-23 | 松下電器産業株式会社 | プラズマ処理装置 |
| JP2002088462A (ja) | 2000-09-14 | 2002-03-27 | Nippon Steel Corp | 封孔処理方法及び封孔処理された溶射皮膜とその皮膜を施したファンまたはブロワー |
| JP4717295B2 (ja) | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
| JP3388228B2 (ja) * | 2000-12-07 | 2003-03-17 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置、及びプラズマエッチング方法 |
| WO2002048421A1 (en) | 2000-12-12 | 2002-06-20 | Tokyo Electron Limited | Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment |
| CN101250680B (zh) | 2000-12-12 | 2013-06-26 | 东京毅力科创株式会社 | 等离子体处理容器内部件以及等离子体处理装置 |
| JP2002228803A (ja) | 2001-01-30 | 2002-08-14 | Konica Corp | 低反射積層体の製造方法及び低反射積層体 |
| US6830622B2 (en) | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
| TWI246873B (en) | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
| JP2003031553A (ja) * | 2001-07-16 | 2003-01-31 | Nec Kansai Ltd | プラズマエッチング装置 |
| US6620736B2 (en) * | 2001-07-24 | 2003-09-16 | Tokyo Electron Limited | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
| US6849306B2 (en) | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| JP4279044B2 (ja) | 2003-05-13 | 2009-06-17 | ヤマハ発動機株式会社 | 部品認識装置及び同装置を備えた表面実装機 |
-
2004
- 2004-02-06 CN CNB2004100312103A patent/CN100418187C/zh not_active Expired - Fee Related
- 2004-02-07 KR KR1020040008149A patent/KR100540051B1/ko not_active Expired - Fee Related
- 2004-02-09 TW TW093102927A patent/TW200501253A/zh not_active IP Right Cessation
- 2004-02-09 US US10/773,245 patent/US20050103275A1/en not_active Abandoned
-
2008
- 2008-12-19 US US12/340,256 patent/US8043971B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12247296B2 (en) | 2018-07-18 | 2025-03-11 | Nhk Spring Co., Ltd. | Member for plasma processing device |
| US12125672B2 (en) | 2019-07-16 | 2024-10-22 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| TWI887249B (zh) * | 2019-07-16 | 2025-06-21 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090104781A1 (en) | 2009-04-23 |
| US20050103275A1 (en) | 2005-05-19 |
| KR20040072467A (ko) | 2004-08-18 |
| CN1521805A (zh) | 2004-08-18 |
| US8043971B2 (en) | 2011-10-25 |
| KR100540051B1 (ko) | 2006-01-11 |
| CN100418187C (zh) | 2008-09-10 |
| TW200501253A (en) | 2005-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI373798B (enExample) | ||
| JP4486372B2 (ja) | プラズマ処理装置 | |
| JP4987911B2 (ja) | プラズマ処理容器内部材 | |
| JP4503270B2 (ja) | プラズマ処理容器内部材 | |
| US10385459B2 (en) | Advanced layered bulk ceramics via field assisted sintering technology | |
| TWI773579B (zh) | 用於腔室蓋與噴嘴上之稀土氧化物系塗層的離子輔助沉積 | |
| CN105408987B (zh) | 稀土氧化物的顶部涂层的离子辅助沉积 | |
| CN101357846A (zh) | 具有可控电阻率的耐等离子体腐蚀陶瓷 | |
| CN116092909A (zh) | 一种等离子体刻蚀反应器 | |
| US10774006B2 (en) | Microwave and induction heat treatment of ceramic coatings | |
| CN104241181A (zh) | 静电吸盘的制造方法,静电吸盘及等离子体处理装置 | |
| JP2023533730A (ja) | 水素およびｎｈ３プラズマ用途のための保護セラミックコーティングを有するプロセスキット | |
| TW202531432A (zh) | 靜電卡盤裝置及其製造方法和靜電卡盤裝置之再生方法 | |
| CN120202526A (zh) | 利用胶体扩增之多孔腔室部件涂层 | |
| TW202440984A (zh) | 用於腔室部件的金屬氟氧化物塗層及其塗佈方法 | |
| WO2025229937A1 (ja) | プラズマ処理装置用部材、及びプラズマ処理装置用部材の製造方法 | |
| CN116791086A (zh) | 一种耐等离子体腐蚀涂层结构及其制备方法 | |
| KR20240012677A (ko) | 적층 구조를 갖는 내플라즈마성 부재 | |
| TW202540478A (zh) | 抗電漿塗層 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |