TW200501253A - Plasma processing apparatus, ring component and plasma processing method - Google Patents

Plasma processing apparatus, ring component and plasma processing method

Info

Publication number
TW200501253A
TW200501253A TW093102927A TW93102927A TW200501253A TW 200501253 A TW200501253 A TW 200501253A TW 093102927 A TW093102927 A TW 093102927A TW 93102927 A TW93102927 A TW 93102927A TW 200501253 A TW200501253 A TW 200501253A
Authority
TW
Taiwan
Prior art keywords
manufacturing process
plasma processing
plasma
ring component
voltage
Prior art date
Application number
TW093102927A
Other languages
English (en)
Other versions
TWI373798B (zh
Inventor
Yasuharu Sasaki
Hiroshi Nagaike
Tsuyoshi Moriya
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003398334A external-priority patent/JP4503270B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200501253A publication Critical patent/TW200501253A/zh
Application granted granted Critical
Publication of TWI373798B publication Critical patent/TWI373798B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW093102927A 2003-02-07 2004-02-09 Plasma processing apparatus, ring component and plasma processing method TW200501253A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003031278 2003-02-07
JP2003398334A JP4503270B2 (ja) 2002-11-28 2003-11-28 プラズマ処理容器内部材

Publications (2)

Publication Number Publication Date
TW200501253A true TW200501253A (en) 2005-01-01
TWI373798B TWI373798B (zh) 2012-10-01

Family

ID=34315569

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102927A TW200501253A (en) 2003-02-07 2004-02-09 Plasma processing apparatus, ring component and plasma processing method

Country Status (4)

Country Link
US (2) US20050103275A1 (zh)
KR (1) KR100540051B1 (zh)
CN (1) CN100418187C (zh)
TW (1) TW200501253A (zh)

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TWI494028B (zh) * 2008-07-23 2015-07-21 Applied Materials Inc 具有可控制分配ｒｆ功率至製程套組環之電漿反應器的工件支撐件
US9580331B2 (en) 2011-05-27 2017-02-28 Nikon Corporation CaF2 polycrystalline body, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystalline body
TWI742127B (zh) * 2016-08-04 2021-10-11 日商日本新工芯技股份有限公司 環狀電極
TWI840855B (zh) * 2021-10-08 2024-05-01 日商日本碍子股份有限公司 晶圓載置台

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US8043971B2 (en) 2011-10-25
KR20040072467A (ko) 2004-08-18
US20050103275A1 (en) 2005-05-19
US20090104781A1 (en) 2009-04-23
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