TWI742127B - 環狀電極 - Google Patents

環狀電極 Download PDF

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TWI742127B
TWI742127B TW106126330A TW106126330A TWI742127B TW I742127 B TWI742127 B TW I742127B TW 106126330 A TW106126330 A TW 106126330A TW 106126330 A TW106126330 A TW 106126330A TW I742127 B TWI742127 B TW I742127B
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碇敦
藤井智
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日商日本新工芯技股份有限公司
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Abstract

本發明之特徵在於具備：矽之環體(32)；及蓋體(34)，其經由接合部而接合於上述環體(32)表面之至少一部分，且電漿耐性較矽更優異；且上述接合部具有至少耐150℃之耐熱性，於700℃以下熔解，含有氧化硼。

Description

環狀電極
本發明係關於一種環狀電極，特別是關於用於乾式蝕刻裝置之電極。
作為LSI(Large Scale Integration，大規模積體電路)等半導體積體裝置製造中之蝕刻裝置，使用利用電漿之乾式蝕刻裝置。於該裝置中，若將蝕刻對象之晶圓配置於平面電極之陰極上，於將蝕刻氣體導入至裝置內之狀態下，藉由高頻振盪器而向對向電極(陽極)與陰極之間施加高頻電壓，則於電極間產生蝕刻氣體之電漿。作為電漿中之活性氣體之正離子入射至晶圓表面而進行蝕刻。 於乾式蝕刻裝置內部，若使用金屬製零件則產生金屬污染，故而使用矽製零件。作為代表性之矽製零件，例如有呈包圍蝕刻對象之晶圓之圓環狀之形狀的聚焦環(專利文獻1)或圓板狀之上部電極(專利文獻2)。目前主流之300 mm晶圓用之聚焦環由於自具有320 mm以上之直徑之矽晶錠製作，故而價格高。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2002-190466號公報 [專利文獻2]日本專利特開2005-217240號公報
[發明所欲解決之問題] 上述矽製零件因曝露於電漿中導致表面被蝕刻，厚度變薄。因此，矽製零件根據厚度之減少量而更換，使用完畢之矽製零件被廢棄。如此，若矽製零件之更換頻率變高，則存在如下問題，即，不僅停止乾式蝕刻裝置之期間延長而使生產效率降低，而且每次浪費使用完畢之構件。 本發明之目的在於提供一種可減少更換頻率之環狀電極。 [解決問題之技術手段] 本發明之環狀電極之特徵在於具備：矽之環體；及蓋體，其經由接合部而接合於上述環體表面之至少一部分，且電漿耐性較矽更優異；且上述接合部具有至少耐150℃之耐熱性，於700℃以下熔解，含有氧化硼。 本發明之環狀電極之特徵在於具備：矽之環體；及蓋體，其經由接合部而接合於上述環體表面之至少一部分，且電漿耐性較矽更優異；且上述接合部具有至少耐150℃之耐熱性，於700℃以下熔解，含有In、Sn及Al之任一者，且係與矽之共晶合金。 [發明之效果] 根據本發明，藉由具備蓋體，而與僅由矽形成之先前之聚焦環相比，矽耐性優異，故而可降低更換頻率。
以下，參照圖式對本發明之實施形態詳細地進行說明。 圖1所示之乾式蝕刻裝置10具備真空腔室12、電極板14、基台16、及作為環狀電極之聚焦環18。電極板14係圓板狀之構件，且藉由支持環20而固定於真空腔室12內之上部。支持環20由作為絕緣構件之矽形成。電極板14具有於厚度方向貫通之複數個貫通孔15。電極板14電性地連接有高頻電源26。電極板14連接有氣體供給管24。自氣體供給管24供給之蝕刻氣體係自電極板14之貫通孔15向真空腔室12內流入，且自排出口28排出至外部。 基台16係設置於真空腔室12內之下部，其周圍由接地環30包圍。接地環30係由作為絕緣構件之矽形成，且接地。於基台16上設置有聚焦環18。聚焦環18係由作為絕緣構件之矽形成，且支持晶圓22之周緣之凹部19遍及內側全周而形成。 乾式蝕刻裝置10係若經由電極板14而供給蝕刻氣體，且自高頻電源26施加高頻電壓，則於電極板14與晶圓22之間產生電漿。藉由該電漿而蝕刻晶圓22表面。 如圖2所示，聚焦環18具有環體32及經由接合部(於本圖中未圖示)而接合之蓋體34。環體32係由作為絕緣構件之矽形成，且支持晶圓22之周緣之凹部38遍及一側表面內側之全周而形成。環體32之矽既可為單晶亦可為多晶，其製造方法、純度、結晶方位等並不限定。於除凹部38以外之一側表面(凸部)設置有蓋體34。蓋體34係由電漿耐性較矽更優異之材料，例如SiC形成之環狀之構件。較佳為，蓋體34以覆蓋環體32之凸部39之方式寬度與凸部39相同，並且厚度為0.5～5.0 mm。 如圖3所示，接合部36設置於環體32之凸部39表面(以下，亦稱為接合面)33與蓋體34之接合面35之間。接合部36具有至少耐150℃之耐熱性，且於700℃以下熔解。更佳為，接合部36具有耐300℃之耐熱性。於本實施形態之情形時，接合部36係包含與矽形成共晶合金之金屬之與矽之共晶合金。與矽形成共晶合金之金屬係In、Sn及Al之任一者(以下，亦稱為「合金形成金屬」)。合金形成金屬之純度只要能夠與矽形成共晶則並不特別限定，較佳為98%以上。 其次，對製造聚焦環18之方法進行說明。首先，對環體32及蓋體34進行表面處理。具體而言，藉由研削及研磨等而對環體32及蓋體34之表面進行加工，較佳為形成為鏡面。亦可藉由氟酸與硝酸之混合液等而對環體32及蓋體34之表面進行蝕刻。作為混合液可使用JIS標準H0609中規定之化學研磨液(氟酸(49%)：硝酸(70%)：乙酸(100%)＝3：5：3)等。 繼而，於環體32之凸部39之表面33配置合金形成金屬箔。從用以熔解之能量較少即可完成之方面而言，合金形成金屬箔之厚度較薄者較佳。合金形成金屬箔為了獲得接合強度而較佳為0.1～100 μm，更佳為0.5～20 μm。合金形成金屬箔若較上述下限值薄則於在接合面33載置合金形成金屬箔時容易產生破損。合金形成金屬箔係若較上述上限值厚，則容易產生與矽之接合並不充分之部分。 繼而，於合金形成金屬箔上放置蓋體34。蓋體34係相對於先配置之環體32配置於同軸上。如上所述，成為於先配置之環體32上介隔合金形成金屬箔而重疊有蓋體34之狀態。 其次，自蓋體34側進行加熱，產生包含矽與合金形成金屬之熔解物。加熱方法並不特別限定，可藉由電阻加熱、光加熱等而進行。自可容易地移動加熱部位，且容易根據所供給之電力而使加熱量變化之方面而言，較佳為光加熱，例如使用各種燈、雷射。 於本實施形態之情形時，可使用圖4所示之裝置。本圖所示之裝置具備至少一個燈48及將該燈48所出射之光聚光之聚光部50。作為燈48，可使用紅外線結晶成長裝置中一般使用之氙氣燈或鹵素燈。作為輸出較佳為1～30 kW左右。 加熱係自蓋體34之上側進行。只要為上側即可，並不限定於相對於蓋體34垂直之方向上側，亦可自傾斜上側。藉由加熱，首先合金形成金屬箔熔解產生金屬熔解物。其次，與該金屬熔解物相接之蓋體34及環體32之接合面33、35被該金屬熔解物滲入，產生包含矽之熔解物。認為若停止加熱而溫度降低，則該熔解物一面形成包含共晶之合金相一面凝固，完成接合。例如，於使用Al箔之情形時，利用至800℃左右為止之加熱可充分將環體32及蓋體34接合。 聚光區域通常為直徑10～30 mm左右。聚光區域係藉由使該燈之發光位置自橢圓鏡之焦點偏移而擴大為30～100 mm左右。藉由聚光區域擴大，可擴大加熱範圍。較佳為，使該聚光區域遍及金屬箔、環體32及蓋體34之表面整體掃描而加熱。 其次，藉由使包含矽與合金形成金屬之熔解物冷卻固化，而產生包含共晶合金之接合部36。根據以上，可將環體32及蓋體34接合而製造聚焦環18。 於合金形成金屬為Al之情形時，若冷卻至約577℃為止，則產生包含Al-矽共晶物(12.2原子%Al)之接合部36。冷卻速度係根據所使用之合金形成金屬而不同，較佳為，於使用Al之情形時以成為10～100℃/分鐘之方式進行控制。若冷卻速度未達上述下限值則冷卻時間變長，效率較差。若冷卻速度大於上述上限值，則存在接合部36中殘留應變之傾向。 冷卻速度可藉由如下方式而控制，即，於合金形成金屬箔之熔解完成之後，使加熱機構之輸出逐漸降低，於推測接合部36之溫度低於共晶物之熔解溫度時停止加熱。此種加熱溫度之控制例如係將與實際上貼合之蓋體34相同之形狀之熱電偶設置於環體32及蓋體34之間，預先測定加熱機構之功率與溫度之關係，基於該測定結果而進行。 由上述加熱所致之熔解物之產生、由冷卻所致之包含共晶合金之接合部36之產生，為了防止合金形成金屬及矽之氧化而較佳為於10～200 torr(約1333～26664 Pa)之氬環境之腔室內進行。亦可不使用氬氣，藉由減壓而防止氧化，但若進行減壓，則存在產生矽之蒸發而將腔室內污染之情形，故而欠佳。又，亦可藉由氮氣而防止氧化，但於1200℃以上會產生矽之氮化，故而欠佳。 以上述方式獲得之聚焦環18係設置於乾式蝕刻裝置10之真空腔室12內，供蝕刻處理。聚焦環18係根據使用頻率而厚度減少。於蓋體34面向晶圓22之狀態下設置聚焦環18，故而蓋體34之厚度減少。於蓋體34之厚度之減少量超過特定值之情形時，更換蓋體34。 如上所述，藉由聚焦環18具備由SiC形成之蓋體34，而與僅由矽形成之先前之聚焦環相比，耐久性優異，故而可減少更換頻率。 被更換之使用完畢之聚焦環18中之環體32係相對於環體32將蓋體34更換為新品，藉此可再利用。為了相對於環體32將蓋體34更換為新品，首先將聚焦環18加熱至600℃以上而將接合部36熔解，使蓋體34自環體32分離。其次，自環體32表面藉由研削加工而將共晶合金去除。然後，按照與製造上述聚焦環18之方法相同之順序，藉由將蓋體34接合於環體32，可獲得新品之聚焦環18。 如上所述，聚焦環18係藉由將接合部36再加熱使之熔解，可更換厚度減少之蓋體34。因此，聚焦環18可再利用環體32，故而可減少藉由更換而產生之構件之浪費。 (變化例) 本發明並不限定於上述實施形態，於本發明之主旨之範圍內能夠適當變更。 圖2所示之環體32係一體物，但本發明並不限定於此，亦可由在圓周方向3分割以上之矽構件而形成。藉由分割為3個以上，可使用自更小之晶圓用矽晶錠切出之矽構件獲得更大之環體32。 圖2所示之蓋體34係一體物，但本發明並不限定於此，亦可由在圓周方向3分割以上之構件而形成。 於上述實施形態之情形時，對蓋體34設置於環體32之凸部39之表面33之情形進行了說明，但本發明並不限定於此，亦可設置於凹部38、內周面、外周面、另一側表面之任一者或整個面。 於上述實施形態之情形時，對使用合金形成金屬箔將環體32及蓋體34接合之情形進行了說明，但本發明並不限定於此。認為即便使用合金形成金屬之粉體或粒子亦能夠將電極構件彼此接合。 於上述實施形態之情形時，對接合部36包含合金形成金屬之情形進行了說明，但本發明並不限定於此，亦可包含氧化硼。關於接合部36包含氧化硼之情形時之聚焦環18之製造方法將於以下進行說明。 首先，將與上述實施形態相同地進行了表面處理之環體32加熱至第1溫度(180～280℃)，對環體32之接合面之至少一部分，供給包括粒子狀之硼酸(B(OH)3 )之起始原料。環體32可藉由使用一般之電阻加熱器之加熱機構而加熱。由於接合面33之溫度為180～280℃，故而於該接合面33上產生硼酸之脫水反應。水於10～60秒左右自硼酸脫離，產生偏硼酸(HBO2 )。於經脫離之水中偏硼酸溶解，成為富於流動性之液體狀物。 於環體32之溫度過低之情形時，無法使水自硼酸脫離而獲得偏硼酸。另一方面，若環體32之溫度過高，則水自硼酸急遽地脫離。藉此，供給至環體32之接合面33之硼酸飛散，或立即產生固化之偏硼酸。若第1溫度為180～280℃，則可更確實地獲得偏硼酸。第1溫度較佳為200～240℃。 作為包括粒子狀之硼酸之起始原料，可直接使用直徑為0.1～2 mm之顆粒狀之市售品。藉由將包括直徑為0.1～2 mm之硼酸之起始原料供給至加熱至第1溫度之環體32之接合面33，可形成如下所述之包含偏硼酸之層。較佳為，硼酸係每次少量地供給至環體32之接合面33之一部分。 藉由將水自硼酸脫離而產生之液體狀物利用刮刀延展，獲得包含偏硼酸之層。如上所述，對環體32之接合面33每次少量地供給作為起始原料之硼酸，每次延展所產生之液體狀物，藉此可於接合面33形成包含均一之偏硼酸之層。作為刮刀，使用將晶圓切斷而獲得者，藉此避免雜質向包含偏硼酸之層混入。 包含偏硼酸之層之厚度較佳為1 mm以下，更佳為0.1～0.5 mm。包含偏硼酸之層之厚度越薄，於之後之步驟加熱時，越可抑制因脫水反應而引起之氣泡之產生。包含偏硼酸之層之厚度係可對所供給之作為起始原料的硼酸之量進行控制而調整。 對在接合面33形成有包含偏硼酸之層之環體32進行加熱，升溫至第2溫度(500～700℃)。其結果，水進而自偏硼酸脫離，獲得包含氧化硼(B2 O3 )之熔融物。於第2溫度過高之情形時，有於之後之步驟冷卻時，因氧化硼與矽之熱膨脹係數之差異而環體32及蓋體34產生斷裂之虞。若第2溫度為500～700℃，則可更確實地獲得包含氧化硼之熔融物。第2溫度較佳為550～600℃。 於產生於環體32之接合區域之包含氧化硼之熔融物之上，壓接進行了表面處理之蓋體34。壓接時之壓力並不特別限定，可適當設定。 藉由使氧化硼之熔融物固化，而環體32及蓋體34藉由氧化硼之層而接合。熔融物係藉由於例如室溫下放置而固化。藉由以如上方式產生接合部36，可製造聚焦環18。 為了將聚焦環18更換為新品，首先，將聚焦環18加熱至500℃以上而使接合部36熔解，或者長時間浸漬於水中使氧化硼溶出，藉此使蓋體34自環體32分離。其次，藉由自環體32表面使用包含水或乙醇之布擦拭而將氧化硼之層去除。然後，按照與上述相同之順序，將蓋體34接合於環體32，藉此可獲得新品之聚焦環18。 包含偏硼酸之層亦可並非形成於環體32及蓋體34之接合面33、35之整個區域，而是沿著接合面33、35之外緣框狀地形成。框狀之包含偏硼酸之層之寬度可設為5～10 mm。於框狀之包含偏硼酸之層之內側之區域配置合金形成金屬箔。亦可於將合金形成金屬箔配置於內側之區域之前，將框狀之包含偏硼酸之層冷卻，對表面進行研磨而降低厚度。於環體32之接合面33形成框狀之包含偏硼酸之層，配置合金形成金屬箔之後，配置蓋體34，加熱至共晶溫度以上且700℃以下。藉由加熱而合金形成金屬與矽形成共晶，藉此可將環體32及蓋體34更進一步牢固地接合。此處形成之共晶合金會由框狀之氧化硼之層包圍，故而金屬擴散成為污染源之可能性亦較小。於該情形時，亦可與上述實施形態相同地，相對於環體32將蓋體34更換為新品。 於上述實施形態之情形時，對將環狀電極應用於聚焦環之情形進行了說明，但本發明並不限定於此。例如，環狀電極除了支持環、接地環以外，還可應用於設置於乾式蝕刻裝置之真空腔室內且被施加電壓，或接地之矽構件。
10‧‧‧乾式蝕刻裝置12‧‧‧真空腔室14‧‧‧電極板15‧‧‧貫通孔16‧‧‧基台18‧‧‧聚焦環(環狀電極)19‧‧‧凹部20‧‧‧支持環22‧‧‧晶圓24‧‧‧氣體供給管26‧‧‧高頻電源28‧‧‧排出口30‧‧‧接地環32‧‧‧環體33‧‧‧接合面34‧‧‧蓋體35‧‧‧接合面36‧‧‧接合部38‧‧‧凹部39‧‧‧凸部48‧‧‧燈50‧‧‧聚光部
圖1係模式性地表示具有本實施形態之環狀電極之乾式蝕刻裝置之構成的剖視圖。 圖2係表示本實施形態之環狀電極之立體圖。 圖3係表示接合部之局部剖視圖。 圖4係模式性地表示製造環狀電極之裝置之剖視圖。
18‧‧‧聚焦環
32‧‧‧環體
34‧‧‧蓋體
38‧‧‧凹部
39‧‧‧凸部

Claims (4)

  1. 一種環狀電極，其特徵在於具備：矽之環體；及蓋體，其經由接合部而接合於上述環體表面之至少一部分，且電漿耐性較矽更優異；且上述接合部具有至少耐150℃之耐熱性，於700℃以下熔解，含有氧化硼。
  2. 如請求項1之環狀電極，其中上述接合部含有In、Sn及Al之任一者，且包含與矽之共晶合金。
  3. 一種環狀電極，其特徵在於具備：矽之環體；及蓋體，其經由接合部而接合於上述環體表面之至少一部分，且電漿耐性較矽更優異；且上述接合部具有至少耐150℃之耐熱性，於700℃以下熔解，含有In、Sn及Al之任一者，且係與矽之共晶合金。
  4. 如請求項1至3中任一項之環狀電極，其中上述環體係於一側表面具有載置晶圓之凹部，上述蓋體係至少配置於除上述凹部以外之上述一側表面。
TW106126330A 2016-08-04 2017-08-04 環狀電極 TWI742127B (zh)

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