JP6146840B1 - 電極板 - Google Patents
電極板 Download PDFInfo
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- JP6146840B1 JP6146840B1 JP2016153987A JP2016153987A JP6146840B1 JP 6146840 B1 JP6146840 B1 JP 6146840B1 JP 2016153987 A JP2016153987 A JP 2016153987A JP 2016153987 A JP2016153987 A JP 2016153987A JP 6146840 B1 JP6146840 B1 JP 6146840B1
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- electrode member
- electrode
- alloy
- electrode plate
- silicon
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- 238000005304 joining Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000155 melt Substances 0.000 claims description 12
- 229910052810 boron oxide Inorganic materials 0.000 claims description 11
- 239000006023 eutectic alloy Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 abstract description 7
- 230000008018 melting Effects 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 19
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 19
- 239000011888 foil Substances 0.000 description 18
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 12
- 239000004327 boric acid Substances 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012263 liquid product Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
14 電極板
15 貫通穴
32 第1電極部材
34 第2電極部材
36 接合部
38 接合面
Claims (5)
- 複数の板状電極部材と、
前記電極部材同士を厚さ方向に接合する接合部と
を備え、
前記接合部は、150℃以上の耐熱性を有し、700℃以下で融解し、In、Sn及びAlのいずれかを含有し、シリコンとの共晶合金である
ことを特徴とする電極板。 - 複数の板状電極部材と、
前記電極部材同士を厚さ方向に接合する接合部と
を備え、
前記接合部は、150℃以上の耐熱性を有し、700℃以下で融解し、酸化ホウ素を含有する
ことを特徴とする電極板。 - 前記接合部は、In、Sn及びAlのいずれかを含有し、シリコンとの共晶合金を含むことを特徴とする請求項2記載の電極板。
- 厚さ方向に貫通した複数の貫通穴を有することを特徴とする請求項1〜3のいずれか1項記載の電極板。
- 一表面に配置される前記電極部材が、シリコンよりもプラズマ耐性に優れた材料を含むことを特徴とする請求項1〜4のいずれか1項記載の電極板。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016153987A JP6146840B1 (ja) | 2016-08-04 | 2016-08-04 | 電極板 |
KR1020197005766A KR102394257B1 (ko) | 2016-08-04 | 2017-07-28 | 전극판 |
CN201780047699.9A CN109564870B (zh) | 2016-08-04 | 2017-07-28 | 电极板 |
US16/322,953 US10580621B2 (en) | 2016-08-04 | 2017-07-28 | Electrode Plate |
PCT/JP2017/027560 WO2018025781A1 (ja) | 2016-08-04 | 2017-07-28 | 電極板 |
TW106126329A TWI765901B (zh) | 2016-08-04 | 2017-08-04 | 電極板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016153987A JP6146840B1 (ja) | 2016-08-04 | 2016-08-04 | 電極板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6146840B1 true JP6146840B1 (ja) | 2017-06-14 |
JP2018022802A JP2018022802A (ja) | 2018-02-08 |
Family
ID=59061208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016153987A Active JP6146840B1 (ja) | 2016-08-04 | 2016-08-04 | 電極板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10580621B2 (ja) |
JP (1) | JP6146840B1 (ja) |
KR (1) | KR102394257B1 (ja) |
CN (1) | CN109564870B (ja) |
TW (1) | TWI765901B (ja) |
WO (1) | WO2018025781A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023162880A (ja) * | 2022-04-27 | 2023-11-09 | 三菱マテリアル株式会社 | シリコン部材、および、シリコン部材の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001101968A (ja) * | 1999-09-30 | 2001-04-13 | Fujitsu Ltd | シリコンレンズ |
JP2008031558A (ja) * | 2007-10-15 | 2008-02-14 | Tokyo Electron Ltd | ガスシャワーヘッド、処理装置、処理方法及び処理装置のメンテナンス方法 |
JP2009231611A (ja) * | 2008-03-24 | 2009-10-08 | Tokyo Electron Ltd | シャワープレート及びシャワープレートの製造方法 |
JP2011049567A (ja) * | 2010-09-17 | 2011-03-10 | Tokyo Electron Ltd | 分割可能な電極及びこの電極を用いたプラズマ処理装置ならびに電極交換方法 |
JP2011100882A (ja) * | 2009-11-06 | 2011-05-19 | Mitsui Eng & Shipbuild Co Ltd | シャワーヘッド、シャワーヘッド製造方法、およびシャワーヘッド再生方法 |
JP2015029132A (ja) * | 2007-03-30 | 2015-02-12 | ラム リサーチ コーポレーションLam Research Corporation | 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ |
JP2015088663A (ja) * | 2013-10-31 | 2015-05-07 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Family Cites Families (13)
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JP3393118B2 (ja) | 2000-12-21 | 2003-04-07 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置および半導体装置の製造方法 |
JP2002198356A (ja) * | 2000-12-26 | 2002-07-12 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005217240A (ja) | 2004-01-30 | 2005-08-11 | Matsushita Electric Ind Co Ltd | ドライエッチング装置およびドライエッチング方法 |
JP2005285846A (ja) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | プラズマエッチング装置のガス吹き出し板 |
US8454850B2 (en) * | 2009-09-02 | 2013-06-04 | Air Products And Chemicals, Inc. | Method for the removal of surface oxides by electron attachment |
JP2011061040A (ja) * | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2011222931A (ja) * | 2009-12-28 | 2011-11-04 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
TWI465737B (zh) * | 2012-08-14 | 2014-12-21 | Accton Technology Corp | 老化測試系統 |
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JP5978105B2 (ja) * | 2012-11-08 | 2016-08-24 | 株式会社東芝 | 炭化ケイ素セラミックス接合体及び炭化ケイ素セラミックス接合体の製造方法 |
EP2765153B1 (en) * | 2013-02-12 | 2017-03-29 | Heraeus Precious Metals North America Conshohocken LLC | Sealing glass composition and methods of applying it |
JP6146839B1 (ja) * | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | 電極用リング |
JP6146841B1 (ja) * | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | リング状電極 |
-
2016
- 2016-08-04 JP JP2016153987A patent/JP6146840B1/ja active Active
-
2017
- 2017-07-28 KR KR1020197005766A patent/KR102394257B1/ko active IP Right Grant
- 2017-07-28 CN CN201780047699.9A patent/CN109564870B/zh active Active
- 2017-07-28 US US16/322,953 patent/US10580621B2/en active Active
- 2017-07-28 WO PCT/JP2017/027560 patent/WO2018025781A1/ja active Application Filing
- 2017-08-04 TW TW106126329A patent/TWI765901B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001101968A (ja) * | 1999-09-30 | 2001-04-13 | Fujitsu Ltd | シリコンレンズ |
JP2015029132A (ja) * | 2007-03-30 | 2015-02-12 | ラム リサーチ コーポレーションLam Research Corporation | 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ |
JP2008031558A (ja) * | 2007-10-15 | 2008-02-14 | Tokyo Electron Ltd | ガスシャワーヘッド、処理装置、処理方法及び処理装置のメンテナンス方法 |
JP2009231611A (ja) * | 2008-03-24 | 2009-10-08 | Tokyo Electron Ltd | シャワープレート及びシャワープレートの製造方法 |
JP2011100882A (ja) * | 2009-11-06 | 2011-05-19 | Mitsui Eng & Shipbuild Co Ltd | シャワーヘッド、シャワーヘッド製造方法、およびシャワーヘッド再生方法 |
JP2011049567A (ja) * | 2010-09-17 | 2011-03-10 | Tokyo Electron Ltd | 分割可能な電極及びこの電極を用いたプラズマ処理装置ならびに電極交換方法 |
JP2015088663A (ja) * | 2013-10-31 | 2015-05-07 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109564870B (zh) | 2023-05-02 |
KR20190034604A (ko) | 2019-04-02 |
US20190172682A1 (en) | 2019-06-06 |
TWI765901B (zh) | 2022-06-01 |
JP2018022802A (ja) | 2018-02-08 |
US10580621B2 (en) | 2020-03-03 |
WO2018025781A1 (ja) | 2018-02-08 |
TW201810412A (zh) | 2018-03-16 |
KR102394257B1 (ko) | 2022-05-03 |
CN109564870A (zh) | 2019-04-02 |
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