CN109564871A - 环状电极 - Google Patents
环状电极 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 13
- 239000006023 eutectic alloy Substances 0.000 claims description 10
- 239000000155 melt Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 239000000956 alloy Substances 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 22
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 18
- 239000011888 foil Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 16
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 12
- 239000004327 boric acid Substances 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
其特征在于,具备硅的环体(32)、以及与硅相比耐等离子体性更优异的盖体(34),所述盖体(34)经由接合部与所述环体(32)表面的至少一部分接合,所述接合部具有能承受至少150℃的耐热性,在700℃以下熔解,并含有氧化硼。
Description
技术领域
本发明涉及环状电极,特别是涉及用于干式蚀刻装置的电极。
背景技术
作为LSI等半导体集成器件制造中的蚀刻装置,采用使用等离子体的干式蚀刻装置。该装置中,作为蚀刻对象的晶圆配置在平面电极的阴极上,在向装置内导入了蚀刻气体的状态下,通过高频振荡器向对电极(阳极)与阴极之间施加高频电压,由此在电极之间产生蚀刻气体的等离子体。等离子体中的活性气体的正离子入射晶圆表面进行蚀刻。
在干式蚀刻装置内部,如果使用金属制构件,会引起金属污染,因此使用硅制构件。作为代表性的硅制构件,例如有包围作为蚀刻对象的晶圆的圆环形状的聚焦环(专利文献1)、圆板状的上部电极(专利文献2)。目前主流的300mm晶圆用的聚焦环,是由直径为320mm以上的硅晶锭制作的,因此价格高。
在先技术文献
专利文献1:日本特开2002-190466号公报
专利文献2:日本特开2005-217240号公报
发明内容
上述硅制构件,通过暴露于等离子体中,其表面被蚀刻,厚度变薄。因此,硅制构件会根据厚度的减少量而进行更换,使用过的硅制构件会被废弃。像这样,硅制构件存在如果更换频率变高,则会使停止干式蚀刻装置的时间延长、生产效率降低,并且每次更换都会浪费使用过的构件这样的问题。
本发明的目的是提供一种能够降低更换频率的环状电极。
本发明涉及的环状电极,其特征在于,具备硅的环体、以及与硅相比耐等离子体性更优异的盖体,所述盖体经由接合部与所述环体表面的至少一部分接合,所述接合部具有能承受至少150℃的耐热性,在700℃以下熔解,并含有氧化硼。
本发明涉及的环状电极,其特征在于,具备硅的环体、以及与硅相比耐等离子体性更优异的盖体,所述盖体经由接合部与所述环体表面的至少一部分接合,所述接合部具有能承受至少150℃的耐热性,在700℃以下熔解,含有In、Sn和Al中的任一者,并且是与硅的共晶合金。
根据本发明,通过具备盖体,与仅由硅形成的以往的聚焦环相比,硅耐性优异,因此能够降低更换频率。
附图说明
图1是示意性地表示具备本实施方式涉及的环状电极的干式蚀刻装置的结构的剖视图。
图2是表示本实施方式涉及的环状电极的立体图。
图3是表示接合部的局部剖视图。
图4是示意性地表示制造环状电极的装置的剖视图。
具体实施方式
以下,参照附图对本发明的实施方式进行详细说明。
图1所示的干式蚀刻装置10,具备真空室12、电极板14、基台16和作为环状电极的聚焦环18。电极板14是圆板状的构件,通过支持环20固定在真空室12内的上部。支持环20由作为绝缘构件的硅形成。电极板14具有在厚度方向上贯通的多个贯通孔15。电极板14与高频电源26电连接。电极板14与气体供给管24连接。从气体供给管24供给的蚀刻气体,从电极板14的贯通孔15向真空室12内流入,从排出口28向外部排出。
基台16设置在真空室12内的下部,其周围被接地环30包围。接地环30由作为绝缘构件的硅形成,并且接地。在基台16上设有聚焦环18。聚焦环18由作为绝缘构件的硅形成,支持晶圆22的周缘的凹部19在内侧的整个圆周形成。
干式蚀刻装置10中,如果通过电极板14供给蚀刻气体,从高频电源26施加高频电压,则会在电极板14与晶圆22之间产生等离子体。通过该等离子体蚀刻晶圆22表面。
如图2所示,聚焦环18具有环体32、以及经由接合部(本图中未图示)接合的盖体34。环体32由作为绝缘构件的硅形成,支持晶圆22的周缘的凹部38形成于一侧表面内侧的整个圆周。环体32的硅可以是单晶也可以是多晶,对于其制造方法、纯度、晶体取向等没有限定。在一侧表面的除了凹部38以外的部分(凸部)设有盖体34。盖体34是由与硅相比耐等离子体性更优异的材料、例如SiC形成的环状的构件。盖体34优选宽度与凸部39相同从而覆盖环体32的凸部39,并且厚度为0.5~5.0mm。
如图3所示,接合部36设置在环体32的凸部39表面(以下也称为接合面)33与盖体34的接合面35之间。接合部36具有能承受至少150℃的耐热性,在700℃以下熔解。接合部36更优选具有能承受300℃的耐热性。本实施方式中,接合部36是包含与硅形成共晶合金的金属的与硅的共晶合金。与硅形成共晶合金的金属是In、Sn和Al中的任一者(以下也称为“合金形成金属”)。只要能够与硅形成共晶,对合金形成金属的纯度没有特别限定,优选为98%以上。
下面,对制造聚焦环18的方法进行说明。首先对环体32和盖体34进行表面处理。具体而言,通过研削和研磨等对环体32和盖体34的表面进行加工,优选成为镜面。可以通过氢氟酸与硝酸的混合液等对环体32和盖体34的表面进行蚀刻。作为混合液,可以使用JIS标准H0609规定的化学研磨液(氢氟酸(49%):硝酸(70%):乙酸(100%)=3:5:3)等。
接着,在环体32的凸部39的表面33配置合金形成金属箔。关于合金形成金属箔的厚度,在熔解所需的能量少这一点上优选较薄。合金形成金属箔为了得到接合强度,优选为0.1~100μm,更优选为0.5~20μm。合金形成金属箔如果比上述下限值薄,则在将合金形成金属箔载置于接合面33时容易破损。合金形成金属箔如果比上述上限值厚,则容易产生与硅的接合不充分的部分。
然后,在合金形成金属箔上放置盖体34。盖体34相对于之前配置的环体32,在同轴上进行配置。如上所述,成为在之前配置的环体32上隔着合金形成金属箔重叠有盖体34的状态。
接着,从盖体34侧加热,生成包含硅与合金形成金属的熔解物。对于加热方法没有特别限定,可以通过电阻加热、光加热等进行。在容易使加热部位移动,并且容易根据供给的电力改变加热量这一点上,优选光加热,例如可使用各种灯、激光。
本实施方式中,可以使用图4所示的装置。本图所示的装置,具备至少一组灯48和将该灯48射出的光汇集在一起的集光部50。作为灯48,可以使用红外线晶体生长装置通常使用的氙气灯、卤素灯。作为输出,优选为1~30kW左右。
加热从盖体34的上侧进行。只要是上侧即可,不限定于与盖体34垂直的方向上侧,也可以是从斜上侧起进行加热。通过加热,首先使合金形成金属箔熔解,生成金属熔解物。接着,与该金属熔解物接触的盖体34和环体32的接合面33、35被该金属熔解物侵入,生成包含硅的熔解物。如果停止加热使温度降低,则该熔解物一边形成包含共晶的合金相一边凝固,完成接合。例如在使用Al箔的情况下,能够通过加热至800℃左右,充分地将环体32和盖体34接合。
集光区域通常直径为10~30mm左右。通过使该灯的发光位置从椭圆镜的焦点偏移,集光区域扩大30~100mm左右。通过集光区域扩大,能够增大加热范围。优选使该集光区域对金属箔、环体32和盖体34的整个表面进行扫描加热。
接着,通过使包含硅和合金形成金属的熔解物冷却并固化,生成包含共晶合金的接合部36。通过以上,能够将环体32和盖体34接合,制造聚焦环18。
合金形成金属为Al的情况下,如果冷却至大约577℃,则会生成包含Al-硅共晶物(12.2原子%Al)的接合部36。冷却速度根据所使用的合金形成金属而有所不同,在使用Al的情况下,优选控制为10~100℃/分钟。如果冷却速度低于所述下限值,则冷却时间变长,效率变差。如果冷却速度大于所述上限值,则在接合部36中有残留应变的倾向。
冷却速度可以通过以下方式进行控制:在合金形成金属箔的熔解完成之后,使加热手段的输出缓缓降低,在推测为接合部36的温度低于共晶物的熔解温度时停止加热。这样的加热温度的控制,例如可以将与实际要贴合的盖体34同样形状的热电偶设置在环体32与盖体34之间,预先测定加热手段的功率与温度的关系,基于该测定结果进行。
上述通过加热实现的熔解物的生成、通过冷却实现的包含共晶合金的接合部36的生成,为了防止合金形成金属和硅的氧化,优选在10~200torr(约1333~26664Pa)的氩气气氛的腔室内进行。也可以不使用氩气,通过减压来防止氧化,但如果进行减压则有时会引起硅的蒸发,对腔室内造成污染,因此不优选。另外,也可以通过氮气防止氧化,但在1200℃以上会引起硅的氮化,因此不优选。
如上所述得到的聚焦环18,设置在干式蚀刻装置10的真空室12内,供于蚀刻处理。聚焦环18根据使用频率,其厚度减少。由于以盖体34面向晶圆22的状态设置聚焦环18,因此盖体34的厚度减少。在盖体34的厚度的减少量超过预定值的情况下,更换盖体34。
如上所述,聚焦环18通过具备由SiC形成的盖体34,与仅由硅形成的以往的聚焦环相比,耐久性更优异,因此能够减少更换频率。
被更换的使用后的聚焦环18中,相对于环体32将盖体34更换为新品,由此环体32能够进行再利用。为了相对于环体32将盖体34更换为新品,首先将聚焦环18加热至600℃以上使接合部36熔解,使盖体34从环体32分离。接着通过研削加工将共晶合金从环体32表面除去。然后,按照与制造上述聚焦环18的方法相同的步骤,将环体34与盖体32接合,由此能够得到新的聚焦环18。
如上所述,关于聚焦环18,通过将接合部36进行再加热使其熔解,能够将厚度减少了的盖体34进行更换。因此,聚焦环18能够将环体32进行再利用,从而能够减少由于更换而产生的构件的浪费。
(变形例)
本发明并不限定于上述实施方式,可以在本发明的主旨的范围内适当变更。
图2所示的环体32为一体物,但本发明不限于此,可以由在圆周方向上分割为3个以上的硅构件形成。通过分割为3个以上,能够利用从较小的晶圆用硅晶锭切取的硅构件得到较大的环体32
图2所示的盖体34为一体物,但本发明不限于此,可以由在圆周方向上分割为3个以上的构件形成。
上述实施方式中,对盖体34设置在环体32的凸部39的表面33的情况进行了说明,但本发明不限于此,也可以设置在凹部38、内周面、外周面、另一侧表面中的任一者或整个面。
上述实施方式中,对使用合金形成金属箔将环体32和盖体34接合的情况进行了说明,但本发明不限于此。也可以使用合金形成金属的粉体或粒子将电极构件彼此接合。
上述实施方式中,对接合部36包含合金形成金属的情况进行了说明,但本发明不限于此,也可以包含氧化硼。以下,对接合部36包含氧化硼的情况下的聚焦环18的制造方法进行说明。
首先,将与上述实施方式同样地进行了表面处理的环体32加热至第1温度(180~280℃),向环体32的接合面的至少一部分供给由粒子状的硼酸(B(OH)3)构成的起始原料。环体32能够通过使用一般的电阻加热器的加热手段进行加热。接合面33的温度为180~280℃,因此在该接合面33上发生硼酸的脱水反应。水在10~60秒左右从硼酸中脱离,生成偏硼酸(HBO2)。偏硼酸在脱离的水中溶解,成为富含流动性的液体状物。
在环体32的温度过低的情况下,无法使水从硼酸中脱离而得到偏硼酸。另一方面,如果环体32的温度过高,则水会急剧地从硼酸中脱离。由此,供给到环体32的接合面33的硼酸飞散,或立即生成固化的偏硼酸。如果第1温度为180~280℃,则能够更加切实地得到偏硼酸。第1温度优选为200~240℃。
作为由粒子状的硼酸构成的起始原料,可以原样使用直径为0.1~2mm的颗粒状的市售品。通过将由直径为0.1~2mm的硼酸构成的起始原料向被加热至第1温度的环体32的接合面33供给,能够形成如后所述的包含偏硼酸的层。硼酸优选对环体32的接合面33的一部分逐量供给。
通过用刮刀将水从硼酸中脱离而生成的液体状物延展,得到包含偏硼酸的层。如上所述对环体32的接合面33逐量供给作为起始原料的硼酸,每一次都将生成的液体状物进行延展,由此能够在接合面33上形成均匀的包含偏硼酸的层。作为刮刀,通过使用将晶圆切断而得到的物质,能够避免杂质混入包含偏硼酸的层。
包含偏硼酸的层的厚度优选为1mm以下,更优选为0.1~0.5mm。包含偏硼酸的层的厚度越薄,在之后的工序中加热时,能够抑制由脱水反应导致的泡的产生。包含偏硼酸的层的厚度可以通过控制供给的作为起始原料的硼酸的量来进行调整。
将在接合面33上形成有包含偏硼酸的层的环体32加热,升温至第2温度(500~700℃)。其结果,水进一步从偏硼酸中脱离,得到包含氧化硼(B2O3)的熔融物。在第2温度过高的情况下,在之后的工序中冷却时,由于氧化硼与硅的热膨胀系数的差异,环体32和盖体34有可能产生裂缝。如果第2温度为500~700℃,则能够更切实地得到包含氧化硼的熔融物。第2温度优选为550~600℃。
在环体32的接合区域中生成的包含氧化硼的熔融物之上,将进行了表面处理的盖体34进行压合。对于压合时的压力没有特别限定,可以适当设定。
通过使氧化硼的熔融物固化,环体32与盖体34由氧化硼的层接合。熔融物例如通过在室温下放置而进行固化。通过如以上这样生成接合部36,能够制造聚焦环18。
为了将聚焦环18更换为新品,首先通过将聚焦环18加热至500℃以上使接合部36熔解、或者将其长时间浸渍于水中而使氧化硼溶出,由此将盖体34从环体32分离。接着,通过使用包含水或乙醇的布进行擦拭,将氧化硼的层从环体32表面除去。然后,采用与上述同样的步骤,将盖体34与环体32接合,由此能够得到新的聚焦环18。
可以不在环体32和盖体34的接合面33、35的整个区域形成包含偏硼酸的层,而是沿着接合面33、35的外缘呈框状形成包含偏硼酸的层。框状的包含偏硼酸的层的宽度可以设为5~10mm。在框状的包含偏硼酸的层的内侧的区域配置合金形成金属箔。可以在将合金形成金属箔配置于内侧的区域之前,将框状的包含偏硼酸的层冷却,对表面进行研磨从而减小厚度。在环体32的接合面33上形成框状的包含偏硼酸的层,并配置合金形成金属箔之后,配置盖体34,加热至共晶温度以上且700℃以下。通过加热,合金形成金属与硅形成共晶,由此能够将环体32和盖体34更牢固地接合。在此形成的共晶合金,会被框状的氧化硼的层包围,因此金属扩散而成为污染源的可能性小。该情况下,可以与上述实施方式同样地,相对于环体32将盖体34更换为新品。
上述实施方式中,对将环状电极应用于聚焦环的情况进行了说明,但本发明不限于此。例如环状电极除了应用于支持环、接地环以外,还能够应用于设置在干式蚀刻装置的真空室内、被施加电压、或接地的硅构件。
附图标记说明
10 干式蚀刻装置
18 聚焦环(环状电极)
32 环体
34 盖体
36 接合部
38 凹部
39 凸部
Claims (4)
1.一种环状电极,其特征在于,
具备硅的环体、以及与硅相比耐等离子体性更优异的盖体,
所述盖体经由接合部与所述环体表面的至少一部分接合,
所述接合部具有能承受至少150℃的耐热性,在700℃以下熔解,并含有氧化硼。
2.一种环状电极,其特征在于,
具备硅的环体、以及与硅相比耐等离子体性更优异的盖体,
所述盖体经由接合部与所述环体表面的至少一部分接合,
所述接合部具有能承受至少150℃的耐热性,在700℃以下熔解,含有In、Sn和Al中的任一者,并且是与硅的共晶合金。
3.根据权利要求1所述的环状电极,其特征在于,
所述接合部含有In、Sn和Al中的任一者,并包含与硅的共晶合金。
4.根据权利要求1~3的任一项所述的环状电极,其特征在于,
所述环体在一侧表面具有载置晶圆的凹部,
所述盖体至少配置于所述一侧表面的除了所述凹部以外的部分。
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JP2018022803A (ja) | 2018-02-08 |
US10553405B2 (en) | 2020-02-04 |
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TW201807734A (zh) | 2018-03-01 |
CN109564871B (zh) | 2023-05-05 |
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