WO2011011532A3 - Hollow cathode showerhead - Google Patents

Hollow cathode showerhead Download PDF

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Publication number
WO2011011532A3
WO2011011532A3 PCT/US2010/042773 US2010042773W WO2011011532A3 WO 2011011532 A3 WO2011011532 A3 WO 2011011532A3 US 2010042773 W US2010042773 W US 2010042773W WO 2011011532 A3 WO2011011532 A3 WO 2011011532A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
showerhead
hollow cathode
radicals
gas distribution
Prior art date
Application number
PCT/US2010/042773
Other languages
French (fr)
Other versions
WO2011011532A4 (en
WO2011011532A2 (en
Inventor
David Quach
Tetsuya Ishikawa
Olga Kryliouk
Brian Burrows
Alexander Tam
Tze Poon
Anzhong Chang
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2010800424916A priority Critical patent/CN102576667A/en
Publication of WO2011011532A2 publication Critical patent/WO2011011532A2/en
Publication of WO2011011532A3 publication Critical patent/WO2011011532A3/en
Publication of WO2011011532A4 publication Critical patent/WO2011011532A4/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Abstract

Embodiments of the present invention provide method and apparatus for performing metal HVPE or MOCVD process using radicals from a plasma. One embodiment of the present invention provides a processing chamber having a gas distribution assembly configured to generate a plasma and provide one or more radical species to a processing volume while shielding electrical field of the plasma from the processing volume. In one embodiment the gas distribution assembly has a plurality of passages defined by a bore connected to a cone, wherein the aspect ratio of the bore is adjusted to allow passage of radicals in the plasma and retain the electrical field of the plasma.
PCT/US2010/042773 2009-07-22 2010-07-21 Hollow cathode showerhead WO2011011532A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800424916A CN102576667A (en) 2009-07-22 2010-07-21 Hollow cathode showerhead

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22766409P 2009-07-22 2009-07-22
US61/227,664 2009-07-22

Publications (3)

Publication Number Publication Date
WO2011011532A2 WO2011011532A2 (en) 2011-01-27
WO2011011532A3 true WO2011011532A3 (en) 2011-04-28
WO2011011532A4 WO2011011532A4 (en) 2011-06-16

Family

ID=43499648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/042773 WO2011011532A2 (en) 2009-07-22 2010-07-21 Hollow cathode showerhead

Country Status (3)

Country Link
KR (1) KR20120053003A (en)
CN (1) CN102576667A (en)
WO (1) WO2011011532A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
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CN102220569B (en) * 2011-07-06 2012-07-04 南昌黄绿照明有限公司 Vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device
US20130034666A1 (en) * 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
FR2986368A1 (en) * 2012-01-27 2013-08-02 Soitec Silicon On Insulator Forming indium gallium nitride, useful for producing semiconductors, comprises partially decomposing precursor containing nitrogen to form nitrogen ions and precursor of group III to form indium and gallium ions at specific growth rate
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
KR101351399B1 (en) * 2012-06-19 2014-01-15 주성엔지니어링(주) Apparatus and method of processing substrate
US9982343B2 (en) * 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US20140235069A1 (en) * 2013-02-15 2014-08-21 Novellus Systems, Inc. Multi-plenum showerhead with temperature control
US20140262031A1 (en) * 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
CN103451627A (en) * 2013-06-04 2013-12-18 北京希睿思科技有限公司 Integrated spray head for vapor deposition
CN103305906A (en) * 2013-06-08 2013-09-18 光垒光电科技（上海）有限公司 Reaction chamber of epitaxial deposition nitriding III-group or nitriding II--group material
US9371579B2 (en) * 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
JP6406811B2 (en) * 2013-11-20 2018-10-17 国立大学法人名古屋大学 III-nitride semiconductor device manufacturing apparatus and method, and semiconductor wafer manufacturing method
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
KR102634044B1 (en) * 2016-09-06 2024-02-06 주성엔지니어링(주) Apparatus for Distributing Gas and Apparatus for Processing Substrate
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR102431354B1 (en) * 2017-07-11 2022-08-11 삼성디스플레이 주식회사 Chemical vapor deposition device and method of manufacturing display device using the same
KR20220056248A (en) 2018-10-19 2022-05-04 램 리써치 코포레이션 Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

Citations (3)

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US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20080286589A1 (en) * 2001-10-02 2008-11-20 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US20090038548A1 (en) * 2006-03-31 2009-02-12 Tokyo Electron Limited Substrate treating apparatus and treating gas emitting mechanism

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JP4141234B2 (en) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 Plasma processing equipment
CN101326629B (en) * 2006-05-30 2011-05-25 应用材料股份有限公司 Process chamber for dielectric gapfill
KR101097625B1 (en) * 2007-03-27 2011-12-22 캐논 아네르바 가부시키가이샤 Vacuum processing apparatus

Patent Citations (3)

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US20080286589A1 (en) * 2001-10-02 2008-11-20 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US20090038548A1 (en) * 2006-03-31 2009-02-12 Tokyo Electron Limited Substrate treating apparatus and treating gas emitting mechanism
US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill

Also Published As

Publication number Publication date
KR20120053003A (en) 2012-05-24
CN102576667A (en) 2012-07-11
WO2011011532A4 (en) 2011-06-16
WO2011011532A2 (en) 2011-01-27

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