WO2012058184A3 - Plasma processing apparatus with reduced effects of process chamber asymmetry - Google Patents
Plasma processing apparatus with reduced effects of process chamber asymmetry Download PDFInfo
- Publication number
- WO2012058184A3 WO2012058184A3 PCT/US2011/057577 US2011057577W WO2012058184A3 WO 2012058184 A3 WO2012058184 A3 WO 2012058184A3 US 2011057577 W US2011057577 W US 2011057577W WO 2012058184 A3 WO2012058184 A3 WO 2012058184A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing apparatus
- process chamber
- plasma processing
- substrate support
- disposed
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 230000005684 electric field Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137013348A KR20130140035A (en) | 2010-10-28 | 2011-10-25 | Plasma processing apparatus with reduced effects of process chamber asymmetry |
CN2011800500026A CN103168507A (en) | 2010-10-28 | 2011-10-25 | Plasma processing apparatus with reduced effects of process chamber asymmetry |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40788210P | 2010-10-28 | 2010-10-28 | |
US61/407,882 | 2010-10-28 | ||
US13/240,451 | 2011-09-22 | ||
US13/240,451 US20120103524A1 (en) | 2010-10-28 | 2011-09-22 | Plasma processing apparatus with reduced effects of process chamber asymmetry |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012058184A2 WO2012058184A2 (en) | 2012-05-03 |
WO2012058184A3 true WO2012058184A3 (en) | 2012-06-21 |
Family
ID=45994687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/057577 WO2012058184A2 (en) | 2010-10-28 | 2011-10-25 | Plasma processing apparatus with reduced effects of process chamber asymmetry |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120103524A1 (en) |
KR (1) | KR20130140035A (en) |
CN (1) | CN103168507A (en) |
TW (1) | TW201234934A (en) |
WO (1) | WO2012058184A2 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120152900A1 (en) * | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | Methods and apparatus for gas delivery into plasma processing chambers |
CN103348776B (en) * | 2011-02-15 | 2017-06-09 | 应用材料公司 | The method and apparatus of multi-region plasma generation |
KR101411993B1 (en) * | 2012-09-25 | 2014-06-26 | (주)젠 | Antenna assembly and plasma process chamber having the same |
CN105027269B (en) | 2013-03-15 | 2018-01-12 | 应用材料公司 | The productivity ratio of etch system is improved by polymer management |
US20160010207A1 (en) * | 2013-04-03 | 2016-01-14 | Dongjun Wang | Plasma-Enhanced Atomic-Layer Deposition System and Method |
KR102171725B1 (en) | 2013-06-17 | 2020-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Enhanced plasma source for a plasma reactor |
US10249475B2 (en) | 2014-04-01 | 2019-04-02 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
US9714462B2 (en) * | 2014-10-08 | 2017-07-25 | Applied Materials, Inc. | Vacuum pre-wetting apparatus and methods |
US10032604B2 (en) | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
US20180005851A1 (en) * | 2016-07-01 | 2018-01-04 | Lam Research Corporation | Chamber filler kit for dielectric etch chamber |
JP6909824B2 (en) | 2019-05-17 | 2021-07-28 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor equipment manufacturing methods and programs |
CN113133175B (en) * | 2019-12-31 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | Plasma inductance coil structure, plasma processing equipment and processing method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000299199A (en) * | 1999-04-13 | 2000-10-24 | Plasma System Corp | Plasma generating device and plasma processing device |
KR20050005818A (en) * | 2003-07-07 | 2005-01-15 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma source having low ion flux and high impedance, -and Plasma chamber using the same |
KR20050049169A (en) * | 2003-11-21 | 2005-05-25 | 삼성전자주식회사 | System for generating inductively coupled plasma and antenna coil structure for generating inductive electric field |
KR20050096392A (en) * | 2004-03-30 | 2005-10-06 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma source coil and plasma chamber using the same |
KR20090036125A (en) * | 2006-08-28 | 2009-04-13 | 베이징 엔엠씨 씨오., 엘티디. | Inductive coupled coil and inductive coupled plasma device using the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5888413A (en) * | 1995-06-06 | 1999-03-30 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
US6089182A (en) * | 1995-08-17 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6352049B1 (en) * | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
JP2972707B1 (en) * | 1998-02-26 | 1999-11-08 | 松下電子工業株式会社 | Plasma etching apparatus and plasma etching method |
US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
US6531029B1 (en) * | 2000-06-30 | 2003-03-11 | Lam Research Corporation | Vacuum plasma processor apparatus and method |
US20040261718A1 (en) * | 2003-06-26 | 2004-12-30 | Kim Nam Hun | Plasma source coil for generating plasma and plasma chamber using the same |
KR100530596B1 (en) * | 2004-03-30 | 2005-11-23 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma apparatus comprising plasma source coil for high process uniformity on wafer |
-
2011
- 2011-09-22 US US13/240,451 patent/US20120103524A1/en not_active Abandoned
- 2011-10-11 TW TW100136764A patent/TW201234934A/en unknown
- 2011-10-25 WO PCT/US2011/057577 patent/WO2012058184A2/en active Application Filing
- 2011-10-25 CN CN2011800500026A patent/CN103168507A/en active Pending
- 2011-10-25 KR KR1020137013348A patent/KR20130140035A/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000299199A (en) * | 1999-04-13 | 2000-10-24 | Plasma System Corp | Plasma generating device and plasma processing device |
KR20050005818A (en) * | 2003-07-07 | 2005-01-15 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma source having low ion flux and high impedance, -and Plasma chamber using the same |
KR20050049169A (en) * | 2003-11-21 | 2005-05-25 | 삼성전자주식회사 | System for generating inductively coupled plasma and antenna coil structure for generating inductive electric field |
KR20050096392A (en) * | 2004-03-30 | 2005-10-06 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma source coil and plasma chamber using the same |
KR20090036125A (en) * | 2006-08-28 | 2009-04-13 | 베이징 엔엠씨 씨오., 엘티디. | Inductive coupled coil and inductive coupled plasma device using the same |
Also Published As
Publication number | Publication date |
---|---|
US20120103524A1 (en) | 2012-05-03 |
WO2012058184A2 (en) | 2012-05-03 |
TW201234934A (en) | 2012-08-16 |
KR20130140035A (en) | 2013-12-23 |
CN103168507A (en) | 2013-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012058184A3 (en) | Plasma processing apparatus with reduced effects of process chamber asymmetry | |
JP2012124168A5 (en) | ||
WO2012057967A3 (en) | Methods and apparatus for controlling photoresist line width roughness | |
WO2011022612A3 (en) | Inductive plasma source | |
WO2013040127A3 (en) | Gas delivery and distribution for uniform process in linear-type large-area plasma reactor | |
WO2010039883A3 (en) | Multi-electrode pecvd source | |
WO2011142957A3 (en) | Inductive plasma source with metallic shower head using b-field concentrator | |
WO2012003335A3 (en) | Deposition apparatus and methods to reduce deposition asymmetry | |
WO2010014433A3 (en) | Field enhanced inductively coupled plasma (fe-icp) reactor | |
WO2009006072A3 (en) | Methods and arrangements for plasma processing system with tunable capacitance | |
WO2011146108A3 (en) | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses | |
WO2011163455A3 (en) | Pre-clean chamber with reduced ion current | |
WO2012015931A3 (en) | Apparatus for controlling the flow of a gas in a process chamber | |
WO2011100293A3 (en) | Process chamber gas flow improvements | |
TW201130031A (en) | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly | |
WO2014052719A3 (en) | Adjusting energy of a particle beam | |
WO2010071785A3 (en) | Plasma confinement structures in plasma processing systems | |
WO2011008703A3 (en) | Plasma processing chamber with enhanced gas delivery | |
WO2011011532A3 (en) | Hollow cathode showerhead | |
WO2011119611A3 (en) | Dielectric deposition using a remote plasma source | |
WO2013105905A3 (en) | Methods and apparatuses for water purification | |
SG195296A1 (en) | Use of spectrum to synchronize rf switching with gas switching during etch | |
WO2010123741A3 (en) | Quartz window having gas feed and processing equipment incorporating same | |
WO2014022872A3 (en) | Apparatus and method for the plasma coating of a substrate, in particular a press platen | |
WO2012087919A3 (en) | Methods and apparatus for gas delivery into plasma processing chambers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11836935 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137013348 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11836935 Country of ref document: EP Kind code of ref document: A2 |