JP7140610B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP7140610B2 JP7140610B2 JP2018166773A JP2018166773A JP7140610B2 JP 7140610 B2 JP7140610 B2 JP 7140610B2 JP 2018166773 A JP2018166773 A JP 2018166773A JP 2018166773 A JP2018166773 A JP 2018166773A JP 7140610 B2 JP7140610 B2 JP 7140610B2
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Description
101 真空容器
102 シャワープレート
102a ガス供給部
103 誘電体窓
104 処理室
106 マイクロ波電源
107 磁場発生コイル
107a 磁場発生コイル用電源
108 電極基材
109 試料
110 排気口
111 静電吸着用電極
113 下部サセプタリング
120 ウェハ載置用電極
124 第1の高周波電源
127 第2の高周波電源
138 上部サセプタリング
139 絶縁リング
140 誘電体膜
160 制御部
170 リング電極
171 薄膜電極
172 誘電体膜
Claims (8)
- 真空容器と、
前記真空容器の内部で被処理試料を載置する電極基材と前記電極基材の外周部分を覆う絶縁性の材料で形成されたサセプタリングと前記サセプタリングに覆われて前記電極基材の外周を囲むように配置された絶縁リングであって上面と前記電極基材の外周と対向する内周面の少なくとも一部とにわたってこれらの面の上面を覆う薄膜電極が形成された絶縁リングとを備えた載置台と、
前記載置台の前記電極基材に第1の高周波電力を印加する第1の高周波電力印加部と、
前記絶縁リングに形成された前記薄膜電極に第2の高周波電力を印加する第2の高周波電力印加部と、
前記真空容器の内部で前記載置台の上部にプラズマを発生させるプラズマ発生手段と、
前記第1の高周波電力印加部と前記第2の高周波電力印加部と前記プラズマ発生手段とを制御する制御部と
を備えたことを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置であって、前記薄膜電極は、表面を誘電体の膜で覆われていることを特徴とするプラズマ処理装置。
- 請求項2記載のプラズマ処理装置であって、前記薄膜電極はタングステンの膜で形成されており、前記誘電体の膜がアルミナで形成されていることを特徴とするプラズマ処理装置。
- 請求項3記載のプラズマ処理装置であって、前記薄膜電極の前記タングステンの膜は、タングステンを前記絶縁リングの表面に溶射することにより成形されたものであることを特徴とするプラズマ処理装置。
- 請求項3記載のプラズマ処理装置であって、前記薄膜電極の表面を覆う前記アルミナの膜は、前記絶縁リングの前記タングステンの膜が形成された部分を覆ってアルミナを溶射することにより成形されたものであることを特徴とするプラズマ処理装置。
- 請求項1乃至5の何れかに記載のプラズマ処理装置であって、前記絶縁リングの前記薄膜電極が形成された部分のうち前記絶縁リングの上面と前記電極基材の外周と対向する面とが交わる部分は、丸みを帯びた面で接続されていることを特徴とするプラズマ処理装置。
- 請求項1記載のプラズマ処理装置であって、前記載置台は、中央部分に対して周辺部分が凹んだ段差形状を有しており、前記絶縁リングは、前記載置台の周辺部の凹んだ段差形状部分に搭載された状態で前記サセプタリングに覆われていることを特徴とするプラズマ処理装置。
- 請求項1記載のプラズマ処理装置であって、前記プラズマ発生手段は、
前記真空容器の上部に前記載置台と対抗して配置されて誘電体材料で形成された誘電体窓と、
前記真空容器の上部から前記誘電体窓を介して前記真空容器の内部に高周波電力を供給する電力供給部と、
前記真空容器の外部に配置されて前記真空容器の内部に磁界を発生させる磁界発生部と、
を備えていることを特徴とするプラズマ処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018166773A JP7140610B2 (ja) | 2018-09-06 | 2018-09-06 | プラズマ処理装置 |
KR1020190097182A KR102218686B1 (ko) | 2018-09-06 | 2019-08-09 | 플라스마 처리 장치 |
CN201910746777.5A CN110880443B (zh) | 2018-09-06 | 2019-08-13 | 等离子处理装置 |
TW110122320A TW202137393A (zh) | 2018-09-06 | 2019-09-03 | 電漿處理裝置 |
TW108131630A TWI734185B (zh) | 2018-09-06 | 2019-09-03 | 電漿處理裝置 |
US16/561,785 US20200083026A1 (en) | 2018-09-06 | 2019-09-05 | Plasma processing device |
JP2022143028A JP7364758B2 (ja) | 2018-09-06 | 2022-09-08 | プラズマ処理方法 |
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JP2018166773A JP7140610B2 (ja) | 2018-09-06 | 2018-09-06 | プラズマ処理装置 |
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US (1) | US20200083026A1 (ja) |
JP (2) | JP7140610B2 (ja) |
KR (1) | KR102218686B1 (ja) |
CN (1) | CN110880443B (ja) |
TW (2) | TW202137393A (ja) |
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JP7454961B2 (ja) * | 2020-03-05 | 2024-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2021177766A1 (ko) | 2020-03-06 | 2021-09-10 | 씨앤엠로보틱스 주식회사 | 마찰 파동 감속기 |
JP2022049504A (ja) * | 2020-09-16 | 2022-03-29 | 株式会社東芝 | 誘電体バリア放電装置 |
KR20220104955A (ko) * | 2021-01-19 | 2022-07-26 | 에스케이하이닉스 주식회사 | 중간 전극을 가진 기판 처리 장치 |
JP7329131B2 (ja) * | 2021-03-24 | 2023-08-17 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011009351A (ja) | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2017055100A (ja) | 2015-07-13 | 2017-03-16 | ラム リサーチ コーポレーションLam Research Corporation | エッジに限局されたイオン軌道制御及びプラズマ動作を通じた、最端エッジにおけるシース及びウエハのプロフィール調整 |
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JPH05183043A (ja) * | 1992-01-07 | 1993-07-23 | Ryoden Semiconductor Syst Eng Kk | 静電吸着装置及び静電吸着方法 |
JP2001034372A (ja) | 1999-07-23 | 2001-02-09 | Alpine Electronics Inc | データ通信方式 |
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