JP7364758B2 - プラズマ処理方法 - Google Patents
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- JP7364758B2 JP7364758B2 JP2022143028A JP2022143028A JP7364758B2 JP 7364758 B2 JP7364758 B2 JP 7364758B2 JP 2022143028 A JP2022143028 A JP 2022143028A JP 2022143028 A JP2022143028 A JP 2022143028A JP 7364758 B2 JP7364758 B2 JP 7364758B2
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Description
101 真空容器
102 シャワープレート
102a ガス供給部
103 誘電体窓
104 処理室
106 マイクロ波電源
107 磁場発生コイル
107a 磁場発生コイル用電源
108 電極基材
109 試料
110 排気口
111 静電吸着用電極
113 下部サセプタリング
120 ウェハ載置用電極
124 第1の高周波電源
127 第2の高周波電源
138 上部サセプタリング
139 絶縁リング
140 誘電体膜
160 制御部
170 リング電極
171 薄膜電極
172 誘電体膜
Claims (6)
- 真空容器内部の処理室内に配置された試料台上面に試料を載置して、当該試料台上方の前記処理室内にプラズマを形成して前記試料を処理するプラズマ処理方法であって、
前記試料の処理中に、前記試料台の前記上面の下方の当該試料台の内部に配置され導電性の材料で構成された第1の電極に第1の高周波電力を供給すると共に、
前記試料が載置される上面の外周側でこれを囲む部分を覆う絶縁性の材料で形成されたサセプタリングに覆われた絶縁リングであって、前記第1の電極の外周を囲むように配置された絶縁リングの上面及び前記試料台の上面の外周と対向する面の一部に配置された薄膜電極に第2の高周波電力を供給するプラズマ処理方法。 - 請求項1記載のプラズマ処理方法であって、前記第1の高周波電力の大きさは前記第2の高周波電力より大きいプラズマ処理方法。
- 請求項1または2記載のプラズマ処理方法であって、前記薄膜電極のうち前記絶縁リングの上面を覆う部分の面積が前記試料台の上面の外周と対向する面の一部に配置された面積より大きくされたプラズマ処理方法。
- 請求項1または2記載のプラズマ処理方法であって、前記絶縁リングの前記薄膜電極が形成された部分のうち前記絶縁リングの上面と前記試料台の上面の外周と対向する面とが交わる部分は、丸みを帯びた面で接続されているプラズマ処理方法。
- 請求項1記載のプラズマ処理方法であって、前記試料台の上部は、前記上面を含む中央部分に対してその周辺部分が凹んだ段差形状を有して、前記絶縁リングおよび薄膜電極は、前記絶縁リングが前記試料台の前記段差形状部分に搭載された状態で前記サセプタリングに覆われているプラズマ処理方法。
- 請求項1記載のプラズマ処理方法であって、
前記プラズマを、前記真空容器の上部に前記試料台の上面と対向して配置され誘電体材料で形成された誘電体窓の上方から前記処理室内部にプラズマ形成用の高周波電界を供給しつつ、前記真空容器の外部に配置されて前記処理室内部に磁界を供給して、形成するプラズマ処理方法。
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JP2022143028A JP7364758B2 (ja) | 2018-09-06 | 2022-09-08 | プラズマ処理方法 |
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JP2018166773A JP7140610B2 (ja) | 2018-09-06 | 2018-09-06 | プラズマ処理装置 |
JP2022143028A JP7364758B2 (ja) | 2018-09-06 | 2022-09-08 | プラズマ処理方法 |
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US (1) | US20200083026A1 (ja) |
JP (2) | JP7140610B2 (ja) |
KR (1) | KR102218686B1 (ja) |
CN (1) | CN110880443B (ja) |
TW (2) | TW202137393A (ja) |
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JP7454961B2 (ja) * | 2020-03-05 | 2024-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11906026B2 (en) | 2020-03-06 | 2024-02-20 | C And M Robotics Co., Ltd. | Frictional wave reducer |
JP2022049504A (ja) * | 2020-09-16 | 2022-03-29 | 株式会社東芝 | 誘電体バリア放電装置 |
KR20220104955A (ko) * | 2021-01-19 | 2022-07-26 | 에스케이하이닉스 주식회사 | 중간 전극을 가진 기판 처리 장치 |
US20240047181A1 (en) | 2021-03-24 | 2024-02-08 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
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