WO2002048421A1 - Procede de regeneration de contenant pour le traitement de plasma, element a l'interieur de ce contenant, procede de preparation de l'element a l'interieur de ce contenant, et appareil de traitement de plasma - Google Patents

Procede de regeneration de contenant pour le traitement de plasma, element a l'interieur de ce contenant, procede de preparation de l'element a l'interieur de ce contenant, et appareil de traitement de plasma Download PDF

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Publication number
WO2002048421A1
WO2002048421A1 PCT/JP2001/010715 JP0110715W WO0248421A1 WO 2002048421 A1 WO2002048421 A1 WO 2002048421A1 JP 0110715 W JP0110715 W JP 0110715W WO 0248421 A1 WO0248421 A1 WO 0248421A1
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WO
WIPO (PCT)
Prior art keywords
plasma processing
plasma
plasma treatment
processing container
container
Prior art date
Application number
PCT/JP2001/010715
Other languages
English (en)
Japanese (ja)
Inventor
Kosuke Imafuku
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2002550132A priority Critical patent/JP4440541B2/ja
Priority to US10/450,094 priority patent/US20040081746A1/en
Priority to KR1020037007810A priority patent/KR100945315B1/ko
Publication of WO2002048421A1 publication Critical patent/WO2002048421A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/01—Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying

Definitions

  • the present invention relates to a method for regenerating a plasma processing container, a member inside the plasma processing container, a method for manufacturing a material inside the plasma processing container, and a plasma processing apparatus.
  • the present invention relates to a method for regenerating a plasma processing container, a member inside the plasma processing container, a method for manufacturing a member inside the plasma processing container, and a plasma processing apparatus.
  • the present invention relates to a method for regenerating a plasma processing container, a member inside the plasma processing container, a method for manufacturing the same, and a plasma processing apparatus.
  • a plasma processing container capable of regenerating a member whose surface has been deteriorated by use in plasma as new.
  • a plasma processing apparatus such as an etching apparatus is used.
  • reactive gas such as CF 4 is used as a processing gas, so the internal members are easily damaged by chemicals. It is susceptible to erosion damage.
  • the inner surface of the plasma processing vessel had been protected by covering the surface of the base material, such as aluminum, with a coating with low plasma consumption.
  • a coating with low plasma consumption e.g., sprayed films of alumina, rare earth oxides, etc. were used as coatings because of their low plasma consumption.
  • a 1.5-mm-thick polyimide plate was installed on the base of the plasma processing vessel inner member made of Rimidium or the like to protect the members.
  • equipment parts a large number of replaceable parts with conductive or insulating properties such as four-force slings and shield rings (hereinafter referred to as “equipment parts”) are located at predetermined positions in the processing chamber. Had been arranged.
  • the sprayed coating deteriorates from the surface after prolonged use and the film thickness decreases. This reduction inevitably determines the life of the internal parts, and used parts need to be replaced with new ones, which is uneconomical.
  • the sprayed film has many irregularities on the surface, and particularly in the convex portion, particles such as reaction products with the processing gas are likely to be formed in the initial stage of using the inner member of the plasma processing vessel, which may cause a product defect.
  • the present invention has been made in view of the above-mentioned problems of a conventional inner member of a plasma processing container, and an object of the present invention is to provide a new and improved method for regenerating a plasma processing container that can be regenerated as new. And a method for manufacturing a plasma processing container internal member and a plasma processing container, and a plasma processing apparatus.
  • the aim of the present invention is to provide a method for regenerating a plasma processing container that can repair a device part as a substitute by a simple method even when the shape of the device part is partially deformed. Disclosure of the invention
  • the first invention of the present application provides a method in which the surface of a base material is coated with a sprayed film of any one of alumina, rare earth oxide, polyimide, and polybenzoimidazono.
  • the same material as that of the sprayed film is re-sprayed on the sprayed film of the member inside the plasma processing container that has been deteriorated by use in plasma. This makes it possible to regenerate a plasma processing vessel whose surface has deteriorated due to use in plasma, as well as a new one.
  • a step of performing dry ice blasting before the re-spraying may be included. This makes it possible to suppress the initial generation of particles.
  • the part when a part of the part disposed at a predetermined position in the plasma processing container is deformed by the plasma processing, the part is removed and then formed into a shape before the deformation. The formed part is joined to the portion from which the deformed portion has been removed.
  • the entire equipment part is replaced with a new part by replacing only the deformed part with a part formed in the shape before deformation.
  • the equipment can be restored to its original shape by simple repair work.
  • the third invention of the present application is an inner member of a plasma processing vessel, wherein a surface of a base material is coated with a sprayed film of any one of alumina, rare earth oxide, polyimide, and polybenzoimidazole;
  • the sprayed film is characterized by dry ice blasting after spraying.
  • the fourth invention of the present application is a method for manufacturing a member inside a plasma processing vessel, which comprises coating a surface of a base material with a sprayed film of any one of alumina, rare earth oxide, polyimide, and polybenzoimidazole. And dry blasting after spraying any of the sprayed films.
  • a plasma processing container inner material and a manufacturing method capable of suppressing generation of particles in an early stage of use and regenerating a new product without functional deterioration even after re-spraying. it can.
  • FIG. 1 is a configuration diagram of a plasma processing apparatus according to the first and second embodiments.
  • FIG. 2 is a schematic cross-sectional view of the inner member of the plasma processing container according to the first embodiment.
  • Fig. 3 shows the process of regenerating the members inside the plasma processing vessel according to the first embodiment. It is sectional drawing which represents typically.
  • FIG. 4 is a cross-sectional view schematically showing the process of regenerating the members inside the plasma processing container according to the second embodiment.
  • FIG. 5 is an internal structural diagram of an etching apparatus as a plasma apparatus according to the third embodiment. .
  • Figure 6 is a cross-sectional view of the focus ring.
  • FIG. 7 is a diagram showing an embodiment of a method for regenerating a component for a plasma device according to the third embodiment.
  • Figure 8 is a cross-sectional view of the shield ring. '
  • FIG. 9 is a view showing another embodiment of the method for restoring a component for a plasma device according to the third embodiment.
  • the regenerable plasma processing vessel inner member according to the present invention can be used for various members in a plasma processing apparatus, for example, a deposit shield, a baffle plate, a focus ring, an insulator ring, a shield ring, a bellows force par, an electrode, and the like. Wear.
  • description will be mainly given of an example of a semiconductor manufacturing apparatus.
  • FIG. 1 is a cross-sectional view showing a configuration of a plasma apparatus 1 according to the first and second embodiments of the present invention.
  • the processing chamber 2 in the plasma apparatus 1 is formed as a cylindrical processing vessel made of a substrate made of, for example, aluminum subjected to anodizing and alumite processing, and is grounded.
  • An insulating support plate 3 made of ceramic or the like is provided at the bottom of the processing chamber 2, and a substantially circular substrate for mounting a substrate to be processed, for example, a semiconductor wafer W having a diameter of 8 inches, is provided on the insulating support plate 3.
  • a columnar susceptor support 4 is provided.
  • a susceptor 5 constituting a lower electrode is provided on the susceptor support 4.
  • Luther (HPF) 6 is connected.
  • a heat exchange chamber 7 is provided inside the susceptor support 4, and a heat exchange medium circulates from the outside through a heat exchange medium introduction pipe 8 and a heat exchange medium discharge pipe 9, and the semiconductor wafer W is transferred through the susceptor 5. It is configured so that it can be maintained at a predetermined temperature. The temperature is automatically controlled by a temperature sensor (not shown) and a temperature control mechanism (not shown).
  • an electrostatic chuck 11 for holding the semiconductor wafer W by suction On the susceptor 5, an electrostatic chuck 11 for holding the semiconductor wafer W by suction is provided.
  • the electrostatic chuck 11 has a configuration in which, for example, a conductive thin-film electrode 12 is sandwiched between polyimide resins from above and below. When a voltage of 5 kV is applied to the electrode 12, the Coulomb force causes the wafer W to be held on the upper surface of the electrostatic chuck 11 by suction.
  • a configuration in which the wafer W is held on the susceptor 5 by pressing the peripheral portion of the wafer W by a mechanical clamp without depending on such an electrostatic chuck may be employed.
  • the insulating plate 3, the susceptor support 4, the susceptor 5, and the electrostatic chuck 11 are provided with a gas passage 1 for supplying, for example, He gas to the back surface of the semiconductor wafer W.
  • a substantially annular focus ring 15 is provided around the susceptor 5 so as to surround the electrostatic chuck 11.
  • the focus ring 15 is made of, for example, a conductive silicon and has a function of effectively causing ions in the plasma to enter the semiconductor wafer W.
  • An upper electrode 21 is supported at an upper portion in the processing chamber 2 via an insulating member 25 and a shield ring 55.
  • the upper electrode 21 has, for example, an electrode support 22 made of aluminum and an electrode plate 23 made of silicon, for example, which is provided in parallel with the susceptor 5 and has a large number of discharge holes 24. .
  • the susceptor 5 is separated from the upper electrode 21 by, for example, about 10 to 60 mm.
  • the electrode support 22 is provided with a gas inlet 26 and is connected to a gas supply pipe 27. Further, the processing gas is supplied via the valve 28 and the mass flow controller 29. The etching gas and other processing gases are introduced into the processing chamber 2.
  • a gas containing a halogen element such as a fluorocarbon gas (CxFy) or a hide-port fluorocarbon gas (CpHqFr), can be used.
  • a fluorocarbon gas CxFy
  • CpHqFr hide-port fluorocarbon gas
  • the lower part of the processing chamber 2 is connected to an exhaust pipe 31 leading to an exhaust device 35 such as a vacuum pump.
  • the air generator 35 is equipped with a vacuum pump such as a turbo-molecular pump, and the processing chamber 2 ⁇ can be evacuated to an arbitrary degree of reduced pressure, for example, from 10 mTorr to 1000 mTorr.
  • a gate valve 32 is provided on the side wall of the processing chamber 2 so that the semiconductor wafer W can be transferred to and from an adjacent load lock chamber (not shown) with the gate valve 32 opened. I have.
  • a high-frequency power supply system of the combed plasma device 1 will be described.
  • power is supplied to the upper electrode 21 from the first high-frequency power supply 40 that outputs high-frequency power with a frequency of, for example, 27 to 15 OMHz, via the matching box 41 and the feed rod 33. It has a configuration.
  • a low-pass filter (LPF) 42 is connected to the upper electrode 21.
  • a high-density plasma can be formed in the processing chamber 2 in a preferable dissociated state, and plasma processing under low pressure conditions becomes possible.
  • the high frequency power supply 40 for example, a 6 OMHz power supply can be used.
  • the susceptor 5 serving as the lower electrode is configured so that power from a high-frequency power supply 50 that outputs high-frequency power with a frequency of, for example, 4 MHz or less is supplied via a matching unit 51.
  • a frequency in such a range an appropriate ion effect can be imparted to the semiconductor wafer W without damaging it.
  • the inner member of the plasma processing vessel according to the present embodiment is exposed to plasma during processing, for example, the inner wall 2a of the processing chamber 2, the insulating support plate 3, the susceptor, and the like. Applicable to support base 4, susceptor 5, electrostatic chuck 11, focus ring 15, insulating member 25, shield ring 55, etc.
  • FIG. 2 is a schematic cross-sectional view of the plasma processing vessel inner member 100 according to the present embodiment.
  • FIG. (A) it is, immediately after the spraying ⁇
  • (b) shows the post-C0 2 blasting.
  • a sprayed film 110 is formed on the surface of a base material 120 of a member inside a plasma processing vessel made of A1.
  • the sprayed film 110 an alumina (Al 2 0 3), rare earth oxides, such as polyimide or polybenzimidazole Zi Mi imidazole can be used.
  • thermal spraying has been performed by impact at the time of collision due to heat and flash speed, but here, spraying is performed only by impact at the time of collision due to jet speed. As a result, thermal spraying with a thickness of several mm is possible, and it can be used as a thermal spray coating.
  • the film immediately after thermal spraying is in a state with very many irregularities. If this film is used inside the plasma processing vessel as it is, particles are generated by collision of ions in the plasma, especially in the fracture layer (crack layer) of the convex part. It may be a cause of deterioration of the film.
  • Fig. 2 (b) when CO 2 blasting is performed immediately after thermal spraying, the surface irregularities are flattened, and the members inside the plasma processing vessel are used for a certain period of time in the plasma processing vessel. Can be realized, and the initial generation of particles can be suppressed. In this process, the thickness of the thermal sprayed ⁇ -surface 131 shown in Fig. 2 (a) is reduced by t1.
  • FIG. 3 shows that the member 100 in the plasma processing container according to the first embodiment is regenerated.
  • FIG. 4 is a cross-sectional view schematically showing the progress of the operation.
  • respraying refers to spraying again on the sprayed film that has been applied before plasma treatment after use in the plasma treatment vessel. '.
  • a sprayed film 110 is formed on the surface of a substrate 120 of a plasma processing vessel inner member 100 made of A1 as a material, and the surface is flattened by CO 2 blasting. is there.
  • Alumina, rare earth oxide, polyimide, polybenzimidazole, or the like can be used for the thermal spray coating 110.
  • the sprayed film surface 133 shown in Fig. 3 (a) is consumed by the thickness t2 as shown in Fig. 3 (b).
  • Table 1 shows the reduction in film thickness t2 when the members inside the plasma processing vessel coated with various materials were left in the plasma processing apparatus.
  • the blast time was set to 30 sec and 60 sec, the blast amount was 5 ⁇ and 10 ⁇ , respectively.
  • the sprayed film surface 135 in Fig. 3 (b) is cut by thickness t3, the unevenness generated on the surface is flattened, and foreign matter can be removed.
  • the film thickness decrease t 3 according Rei_0 2 blasting in the case of Y 2 0 3 sprayed coating, 10 Myupaiiota more, and preferably from more than 20 ⁇ .
  • FIG. 3 (d) the same material as that of the sprayed film 110 is sprayed again.
  • the reusable plasma processing container inner member and the method of manufacturing the same with the countermeasures against the initial particles and the method of regenerating the plasma processing container internal member have the following advantages. It is possible to provide a member inside the plasma processing container that can suppress generation of particles and can be regenerated as new after use.
  • a method of removing the surface of the plasma processing chamber member after use foreign matter but are not limited to Rei_0 2 blasting is preferred not to remain on the surface. If the surface can be cleaned and cleaned with a chemical solution without damaging the base material, it can be polished with abrasives such as blasts using Alumina or SiC, sand sand, etc. Furthermore, chemical polishing by etching with a chemical solution may be applicable.
  • FIG. 4 is a cross-sectional view schematically illustrating a process of regenerating the plasma processing container inner member 100 according to the second embodiment.
  • (A) shows the initial state
  • (b) shows the state after use in the plasma processing vessel
  • (c) shows the state after respraying.
  • the sprayed film during re-spraying is more easily adhered. This is because the sprayed film is more likely to adhere during re-spraying when the surface is uneven after plasma treatment than when it is relatively flat. This makes it possible to regenerate a plasma processing vessel whose surface has deteriorated as a result of using it in plasma.
  • FIG. 5 is a diagram showing the internal structure of a plasma etching apparatus as a plasma processing apparatus.
  • the inside of the apparatus main body 201 of the plasma etching apparatus, that is, the processing chamber 221, has a large number of variously formed various shapes. Device parts are arranged at predetermined positions.
  • a lower electrode 202 made of a conductive material is provided below the processing chamber 221, and an electrostatic chuck 2 for sucking and holding a semiconductor wafer W as an object to be processed is further provided.
  • the lower electrode 202 is mounted on the lower electrode 202, and the lower electrode 202 is supported on an elevating shaft 205 that can move up and down in the direction of arrow A.
  • the elevating shaft 205 is connected to a high-frequency power source 207 via a matching unit 206, and the elevating shaft 205 is penetrated by an annular member 209 made of a conductive material. I have.
  • the lower electrode 202 is protected by an electrode holding member 229, and is formed of a conductive material such as stainless steel between the electrode protecting member 229 and the bottom surface of the apparatus main body 201.
  • An expandable bellows 208 is seated.
  • a focus ring 210 made of a conductive material or an insulating material is provided on the upper side surface of the lower electrode 202, and a first bellows cover is provided on the bottom surface of the focus ring 210.
  • a second bellows power par 2 1 2 is provided upright from the bottom of the main body 201 so as to partially overlap the first bellows cover 2 1 1 .
  • an upper electrode 213 made of a conductive material is disposed in a pair with the lower electrode 202, and the upper electrode 213 is further matched with a matching device 218.
  • a number of gas discharge holes 2 16 penetrate the upper electrode 2 13, and the gas supply holes 2 17 provided on the top Reactive gas containing CF (fluorocarbon) -based gas is supplied to the processing chamber 221 through the gas discharge port 216. That is, the gas supply port 217 is connected to the gas supply source 220 through the flow control valve 218 and the on-off valve 219, and the reaction gas from the gas supply source 220 opens and closes.
  • the gas is supplied to the gas supply port 217 via the valve 219 and the flow control valve 218, and is discharged from the gas discharge hole 216 and introduced into the processing chamber 221.
  • the upper electrode 2 13 is held by a shield ring 222 formed of an insulating material, and a protective ring 222 is provided around the shield ring 222.
  • a shield member 224 is vertically provided from the outer periphery of the cover.
  • a discharge hole 225 is formed at the bottom of the device main body 201, and the discharge hole 225 is connected to a vacuum pump 226.
  • a workpiece transfer hole 227 is provided through the semiconductor wafer W, and the semiconductor wafer W is loaded and unloaded.
  • the elevation shaft 205 is Acts as a power supply rod, and high-frequency power of 13.56 MHz, for example, is applied to lower electrode 202 and upper electrode 2 13 from high-frequency power sources 207 and 215 Then, a glow discharge occurs.
  • the processing chamber 221 is depressurized to a predetermined vacuum atmosphere by the vacuum pump 226 and the reactive gas from the gas supply source 220 is supplied to the processing chamber 221, the above-mentioned glow discharge occurs.
  • the reactive gas is turned into a plasma through the filter, and the plasma is confined between the lower electrode 210 and the upper electrode 21 3 by the focus ring 210 and the shield ring 222, and as a result, A desired fine color is applied to the masked semiconductor wafer W.
  • semiconductors E and W are the forces S that are finely processed by the dry etching process.
  • the surfaces of various device parts that are exposed to the plasma atmosphere such as the focus ring 210 and the shield ring 222, are also observed. Since it is consumed by etching, it is necessary to replace these worn out equipment parts with new parts according to the degree of wear. However, if such a worn out device part is always replaced with a new part, the production cost will rise or if the new part is not in stock, it will be lost. The production line must be stopped.
  • the deformed part when a part of each component is deformed, the deformed part is cut off, and the part formed in the shape before the deformation is cut and removed. Welded to the location.
  • Fig. 6 is a cross-sectional view of the focus ring 210.
  • the focus ring 210 is a ring shape having an inner diameter D1 and an outer diameter D2 in the case of an ordinary new part.
  • the peripheral surface has a stepped portion 230. '
  • the focus ring 2 1 0 is formed of an insulating ten raw material such as conductive 'material or S i O 2, such as A 1, the plasma uniformity around the semiconductor wafer W when it is formed of a conductive material When formed from an insulating material, it acts to form high-density plasma on the semiconductor wafer W.
  • the focus ring 210 since the focus ring 210 is exposed to a plasma atmosphere, The surface is etched away by the plasma, and as a result, as shown in Fig. 7 (a), a part of the focus ring 210 is deformed and a deformed part 210a is formed. .
  • a new part 210b having dimensions and shape before deformation is separately manufactured, while along the cut line C1 in FIG. 7 (a). Then, the focus ring 210 is cut to remove the deformed part 210a, and as shown in [B] of Fig. 7 (c), a new part 210 is added to the part corresponding to the deformed part 210a. b is welded to produce a focus ring 210 having a stepped portion 230 similar to that of FIG. 6 on the inner peripheral surface. Then, the focus ring 210 thus repaired / manufactured is disposed at a predetermined position of the plasma etching apparatus, whereby a desired etching process is restarted.
  • the deformed part 210a is removed and replaced with a new part 210b.
  • the desired focus ring 210 can be obtained again only by itself, so that it is not necessary to always replace the deformed focus ring with a new focus ring, and it is possible to repair a device part as a substitute by a simple method. Thus, the cost can be reduced.
  • the plasma etching device it goes without saying that the same can be applied to other device parts, for example, the shield ring 222, the protective ring 222, the shield member 222, and the like.
  • FIGS. 8 and 9 show a case where the reproducing method of the third embodiment is applied to the shield ring 222.
  • FIG. 8 is a cross-sectional view of the above shield ring 222.
  • the shield ring 222 is formed in a ring shape having an inner diameter D3 and an outer diameter D4. Further, it is formed to have a thin portion 2 31.
  • the scino red ring 222 is also exposed to the plasma atmosphere, and as shown in FIG. Etching is performed to form a deformed portion 2 2 2a.
  • a new part 222-b having the dimensions and shape before deformation is separately manufactured.
  • the shield ring 222 was cut along the cut line C2 in Fig. 9 (a) to remove the deformed part 222a, and as shown in Fig. 9 (c), "E".
  • a new part 222b is welded to the part corresponding to the part 222a, and a shield ring 222 having a thin part 231 similar to that shown in Fig. 8 is manufactured.
  • the shield ring 222 thus repaired / manufactured is disposed again at a predetermined position of the plasma etching apparatus, whereby the desired etching process can be restarted.
  • the deformed portion 222a is removed and the new part 2 is removed.
  • the desired shield ring 2 2 2 can be obtained simply by replacing it with 22 b, eliminating the need to constantly replace the deformed focus ring with a new focus ring, and manufacturing device parts as replacements in a simple manner. The cost can be reduced.
  • the third embodiment is not limited to the above embodiment.
  • the ion etching assisted plasma etching apparatus has been described as an example. However, it is needless to say that a magnetic field assisted plasma etching apparatus may be used.
  • the surface of the substrate is made of alumina, rare earth oxide,
  • the deformed part is removed after removing the deformed part. Since it is joined to the removed part, even if the shape of the equipment part is deformed, it is not necessary to always replace the deformed equipment part with a new rail equipment part. It is possible to manufacture equipment parts as substitutes, reduce costs, and minimize the downtime of the production line due to lack of stock of new parts.
  • the alumina surface of the substrate in the plasma processing container member rare earth oxides, coated with a thermally sprayed film of polyimide or polybenzoxazole I Mi imidazole, by smoothing the surface by co 2 blasting prior to use, Initial particle generation can be suppressed.
  • the power described in the preferred embodiment of the method for regenerating the inner member of the plasma processing container and the renewable inner member of the plasma processing container according to the present invention is not limited to such an example. Les ,. It will be apparent to those skilled in the art that various changes or modifications may be made within the scope of the technical idea described in the appended claims. It is understood that it belongs to the technical scope. ⁇ Industrial applicability
  • the present invention can be applied to the renewal of internal parts of a plasma processing vessel whose surface has been deteriorated by use in plasma as if it were a new one, and particularly to the manufacturing process of semiconductor devices and LCD substrates. It is possible.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
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  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé permettant de régénérer un contenant destiné au traitement de plasma, qui se caractérise en ce que, pour un revêtement pulvérisé thermiquement comprenant un élément d'alumine, un oxyde métallique de terres rares, un polyimide et un polybenzimidazole, détérioré par l'utilisation dans le plasma, sur la surface d'un élément à l'intérieur d'un contenant destiné au traitement de plasma ayant un substrat et, posé dessus, le revêtement thermiquement pulvérisé, un matériau identique à celui destiné au revêtement pulvérisé et détérioré, est repulvérisé. Le procédé permet de régénérer, comme neuf, un contenant destiné au traitement de plasma, dont la surface a été détériorée par son utilisation dans le plasma.
PCT/JP2001/010715 2000-12-12 2001-12-07 Procede de regeneration de contenant pour le traitement de plasma, element a l'interieur de ce contenant, procede de preparation de l'element a l'interieur de ce contenant, et appareil de traitement de plasma WO2002048421A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002550132A JP4440541B2 (ja) 2000-12-12 2001-12-07 プラズマ処理装置の再生方法、プラズマ処理装置およびプラズマ処理容器の内部の部材の再生方法
US10/450,094 US20040081746A1 (en) 2000-12-12 2001-12-07 Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
KR1020037007810A KR100945315B1 (ko) 2000-12-12 2001-12-07 플라즈마 처리 용기의 재생 방법, 플라즈마 처리 용기내부 부재, 플라즈마 처리 용기 내부 부재의 제조 방법,및 플라즈마 처리 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000377100 2000-12-12
JP2000-377100 2000-12-12
JP2001-59985 2001-03-05
JP2001059985 2001-03-05

Publications (1)

Publication Number Publication Date
WO2002048421A1 true WO2002048421A1 (fr) 2002-06-20

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Country Status (4)

Country Link
JP (1) JP4440541B2 (fr)
KR (2) KR100945315B1 (fr)
CN (1) CN100386467C (fr)
WO (1) WO2002048421A1 (fr)

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JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP2007516921A (ja) * 2003-12-18 2007-06-28 ラム　リサーチ　コーポレーション 半導体材料処理装置におけるイットリアでコーティングされたセラミック部品及びその部品を製造する方法
JP2008028052A (ja) * 2006-07-20 2008-02-07 Tokyo Electron Ltd 静電吸着電極の補修方法
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
US8043971B2 (en) 2003-02-07 2011-10-25 Tokyo Electron Limited Plasma processing apparatus, ring member and plasma processing method
JP2012004580A (ja) * 2011-07-29 2012-01-05 Tokyo Electron Ltd 静電吸着電極の補修方法
JP2013140950A (ja) * 2011-12-05 2013-07-18 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel

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KR100859955B1 (ko) * 2005-04-22 2008-10-06 주식회사 코미코 플라즈마 처리 용기 내부재 및 그 제조 방법
JP5248038B2 (ja) * 2007-05-22 2013-07-31 東京エレクトロン株式会社 載置台およびそれを用いたプラズマ処理装置
KR100872328B1 (ko) * 2008-02-11 2008-12-05 주식회사 코미코 플라즈마 처리 장치 내부재 및 그 제조 방법
KR100933433B1 (ko) * 2008-11-07 2009-12-23 주식회사 코미코 플라즈마 처리 장치용 배플 플레이트의 제조 방법
JP5623722B2 (ja) * 2009-09-28 2014-11-12 東京エレクトロン株式会社 プラズマエッチング装置用シリコン製部品の再生方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
KR101301940B1 (ko) * 2012-12-05 2013-08-30 (주)오씨티 폐 배터리 재생 장치 및 방법
JP6598132B1 (ja) * 2019-06-13 2019-10-30 株式会社アドマップ 成膜構造体の再生方法および再生成膜構造体

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JPH04238882A (ja) * 1991-01-10 1992-08-26 Denki Kagaku Kogyo Kk 高温絶縁物品
JPH0841309A (ja) * 1994-07-28 1996-02-13 Hoechst Japan Ltd ドライエッチング装置用ポリベンゾイミダゾール系樹脂製物品

Cited By (10)

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Publication number Priority date Publication date Assignee Title
JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel
US8043971B2 (en) 2003-02-07 2011-10-25 Tokyo Electron Limited Plasma processing apparatus, ring member and plasma processing method
JP2007516921A (ja) * 2003-12-18 2007-06-28 ラム　リサーチ　コーポレーション 半導体材料処理装置におけるイットリアでコーティングされたセラミック部品及びその部品を製造する方法
JP2008028052A (ja) * 2006-07-20 2008-02-07 Tokyo Electron Ltd 静電吸着電極の補修方法
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
JP2012004580A (ja) * 2011-07-29 2012-01-05 Tokyo Electron Ltd 静電吸着電極の補修方法
JP2013140950A (ja) * 2011-12-05 2013-07-18 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR101903831B1 (ko) 2011-12-05 2018-10-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법

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KR20030063415A (ko) 2003-07-28
CN100386467C (zh) 2008-05-07
KR100945315B1 (ko) 2010-03-05
KR101005983B1 (ko) 2011-01-05
CN1479801A (zh) 2004-03-03
JP4440541B2 (ja) 2010-03-24
KR20090081446A (ko) 2009-07-28
JPWO2002048421A1 (ja) 2004-04-15

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