CN100418187C - 等离子体处理装置、环形部件和等离子体处理方法 - Google Patents

等离子体处理装置、环形部件和等离子体处理方法 Download PDF

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Publication number
CN100418187C
CN100418187C CNB2004100312103A CN200410031210A CN100418187C CN 100418187 C CN100418187 C CN 100418187C CN B2004100312103 A CNB2004100312103 A CN B2004100312103A CN 200410031210 A CN200410031210 A CN 200410031210A CN 100418187 C CN100418187 C CN 100418187C
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annular element
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plasma
element according
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CN1521805A (zh
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佐佐木康晴
长池宏史
守屋刚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004100312103A 2003-02-07 2004-02-06 等离子体处理装置、环形部件和等离子体处理方法 Expired - Fee Related CN100418187C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003031278 2003-02-07
JP2003031278 2003-02-07
JP2003398334 2003-11-28
JP2003398334A JP4503270B2 (ja) 2002-11-28 2003-11-28 プラズマ処理容器内部材

Publications (2)

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CN1521805A CN1521805A (zh) 2004-08-18
CN100418187C true CN100418187C (zh) 2008-09-10

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US (2) US20050103275A1 (enExample)
KR (1) KR100540051B1 (enExample)
CN (1) CN100418187C (enExample)
TW (1) TW200501253A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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CN102484062A (zh) * 2009-08-21 2012-05-30 朗姆研究公司 测量晶片偏压的方法与装置
CN103165494A (zh) * 2011-12-08 2013-06-19 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN106104775A (zh) * 2014-01-31 2016-11-09 应用材料公司 腔室涂层

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