CN100418187C - 等离子体处理装置、环形部件和等离子体处理方法 - Google Patents

等离子体处理装置、环形部件和等离子体处理方法 Download PDF

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Publication number
CN100418187C
CN100418187C CNB2004100312103A CN200410031210A CN100418187C CN 100418187 C CN100418187 C CN 100418187C CN B2004100312103 A CNB2004100312103 A CN B2004100312103A CN 200410031210 A CN200410031210 A CN 200410031210A CN 100418187 C CN100418187 C CN 100418187C
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annular element
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plasma
element according
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CN1521805A (zh
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佐佐木康晴
长池宏史
守屋刚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H10P72/0421—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004100312103A 2003-02-07 2004-02-06 等离子体处理装置、环形部件和等离子体处理方法 Expired - Fee Related CN100418187C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003031278 2003-02-07
JP2003031278 2003-02-07
JP2003398334A JP4503270B2 (ja) 2002-11-28 2003-11-28 プラズマ処理容器内部材
JP2003398334 2003-11-28

Publications (2)

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CN1521805A CN1521805A (zh) 2004-08-18
CN100418187C true CN100418187C (zh) 2008-09-10

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CNB2004100312103A Expired - Fee Related CN100418187C (zh) 2003-02-07 2004-02-06 等离子体处理装置、环形部件和等离子体处理方法

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US (2) US20050103275A1 (enExample)
KR (1) KR100540051B1 (enExample)
CN (1) CN100418187C (enExample)
TW (1) TW200501253A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484062A (zh) * 2009-08-21 2012-05-30 朗姆研究公司 测量晶片偏压的方法与装置
CN103165494A (zh) * 2011-12-08 2013-06-19 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN106104775A (zh) * 2014-01-31 2016-11-09 应用材料公司 腔室涂层

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
CN100421914C (zh) * 2001-03-29 2008-10-01 株式会社普利司通 制造轮胎与轮胎构件的方法及用于此方法的装置
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
CN1249789C (zh) 2002-11-28 2006-04-05 东京毅力科创株式会社 等离子体处理容器内部件
KR100918528B1 (ko) 2003-03-31 2009-09-21 도쿄엘렉트론가부시키가이샤 처리부재 상에 인접한 코팅을 결합시키는 방법
JP4532479B2 (ja) * 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
EP1465468B1 (en) * 2003-03-31 2007-11-14 SANYO ELECTRIC Co., Ltd. Metal mask and method of printing lead-free solder paste using same
US6843870B1 (en) * 2003-07-22 2005-01-18 Epic Biosonics Inc. Implantable electrical cable and method of making
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
JP4666575B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
JP4666576B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の洗浄方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
US20060102080A1 (en) * 2004-11-12 2006-05-18 Advanced Ion Beam Technology, Inc. Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
JP4849829B2 (ja) * 2005-05-15 2012-01-11 株式会社ソニー・コンピュータエンタテインメント センタ装置
US8231986B2 (en) * 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
WO2007023971A1 (ja) * 2005-08-22 2007-03-01 Tocalo Co., Ltd. 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法
JP4571561B2 (ja) * 2005-09-08 2010-10-27 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US20070091540A1 (en) 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP4643478B2 (ja) * 2006-03-20 2011-03-02 トーカロ株式会社 半導体加工装置用セラミック被覆部材の製造方法
US7850864B2 (en) * 2006-03-20 2010-12-14 Tokyo Electron Limited Plasma treating apparatus and plasma treating method
US7648782B2 (en) * 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
JP5014656B2 (ja) * 2006-03-27 2012-08-29 国立大学法人東北大学 プラズマ処理装置用部材およびその製造方法
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20080105203A1 (en) * 2006-09-28 2008-05-08 Tokyo Electron Limited Component for substrate processing apparatus and method of forming film on the component
JP2010017081A (ja) * 2006-10-10 2010-01-28 Ajinomoto Co Inc Ｌ−アミノ酸の製造法
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
JP2008251866A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置
WO2009031520A1 (ja) * 2007-09-04 2009-03-12 Sharp Kabushiki Kaisha プラズマ処理装置およびプラズマ処理方法ならびに半導体素子
KR101486553B1 (ko) * 2008-03-20 2015-01-26 주식회사 원익아이피에스 진공처리장치
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US8185166B2 (en) * 2008-10-24 2012-05-22 Apple Inc. Thermal spray coating for seamless and radio-transparent electronic device housing
WO2010064298A1 (ja) * 2008-12-02 2010-06-10 株式会社神戸製鋼所 プラズマ処理装置用部材およびその製造方法
DE112010000717B4 (de) * 2009-01-09 2014-02-20 Ulvac, Inc. Plasmaverarbeitungsvorrichtung
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP2010232476A (ja) * 2009-03-27 2010-10-14 Tokyo Electron Ltd プラズマ処理装置
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
KR101430635B1 (ko) * 2010-10-06 2014-08-18 한국전자통신연구원 하전입자빔 생성에 사용되는 타겟 구조체, 그 제조 방법 및 이를 이용한 의료 기구
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
TWI535660B (zh) 2011-05-27 2016-06-01 尼康股份有限公司 CaF 2 Polycrystalline, focusing ring, plasma processing device and CaF 2 Polymorphic manufacturing method
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
KR102045942B1 (ko) * 2011-05-31 2019-11-18 어플라이드 머티어리얼스, 인코포레이티드 에지, 측면 및 후면 보호를 갖는 건식 식각을 위한 장치 및 방법들
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
CN104428271B (zh) * 2012-07-05 2017-03-08 株式会社尼康 多晶CaF2构件、用于等离子体处理装置的构件、等离子体处理装置及聚焦环的制造方法
JP2014154866A (ja) * 2013-02-14 2014-08-25 Fujifilm Corp ドライエッチング装置及びドライエッチング装置用のクランプ
US20140374901A1 (en) * 2013-06-21 2014-12-25 Samsung Electronics Co., Ltd Semiconductor package and method of fabricating the same
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
CN106716619B (zh) * 2014-09-30 2020-09-15 住友大阪水泥股份有限公司 静电吸盘装置
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
KR101949406B1 (ko) * 2016-07-07 2019-02-20 세메스 주식회사 기판 처리 장치
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN108074787A (zh) * 2016-11-10 2018-05-25 北京北方华创微电子装备有限公司 下电极结构及半导体加工设备
US10443125B2 (en) 2017-05-10 2019-10-15 Applied Materials, Inc. Flourination process to create sacrificial oxy-flouride layer
JP6797079B2 (ja) * 2017-06-06 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6851270B2 (ja) * 2017-06-16 2021-03-31 東京エレクトロン株式会社 静電吸着方法
JP6906377B2 (ja) * 2017-06-23 2021-07-21 東京エレクトロン株式会社 排気プレート及びプラズマ処理装置
KR101980203B1 (ko) * 2017-10-30 2019-05-21 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
EP3711081B1 (en) * 2017-11-17 2024-06-19 AES Global Holdings, Pte. Ltd. Spatial and temporal control of ion bias voltage for plasma processing
JP2019160714A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
TWI741320B (zh) 2018-07-18 2021-10-01 日商日本發條股份有限公司 電漿處理裝置用構件
JP7115942B2 (ja) * 2018-09-06 2022-08-09 東京エレクトロン株式会社 載置台、基板処理装置、エッジリング及びエッジリングの搬送方法
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
US11289310B2 (en) * 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7234036B2 (ja) * 2019-05-28 2023-03-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7278896B2 (ja) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置
US11456159B2 (en) * 2019-10-25 2022-09-27 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
US12033838B2 (en) * 2020-03-24 2024-07-09 Tokyo Electron Limited Plasma processing apparatus and wear amount measurement method
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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KR102622984B1 (ko) * 2021-08-25 2024-01-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7583698B2 (ja) * 2021-10-08 2024-11-14 日本碍子株式会社 ウエハ載置台

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658163A (ja) * 1992-08-08 1994-03-01 Mazda Motor Corp ロータリピストンエンジン
CN1110832A (zh) * 1994-02-15 1995-10-25 松下电器产业株式会社 真空等离子处理装置
JPH08162444A (ja) * 1994-12-08 1996-06-21 Tokyo Electron Ltd プラズマ処理装置及びその制御方法
CN1138746A (zh) * 1995-05-24 1996-12-25 松下电器产业株式会社 气体传热等离子体处理装置
JPH09115884A (ja) * 1995-10-20 1997-05-02 Sony Corp プラズマ装置およびこれを用いたドライエッチング方法
US5868848A (en) * 1995-06-07 1999-02-09 Tokyo Electron Limited Plasma processing apparatus
JP2000173988A (ja) * 1998-12-01 2000-06-23 Sumitomo Metal Ind Ltd 基板保持台、及びプラズマ処理装置
JP2000183038A (ja) * 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
JP2001210621A (ja) * 2000-01-26 2001-08-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2003031553A (ja) * 2001-07-16 2003-01-31 Nec Kansai Ltd プラズマエッチング装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357387A (en) * 1981-08-20 1982-11-02 Subtex, Inc. Flame resistant insulating fabric compositions prepared by plasma spraying
JPH04279044A (ja) 1991-01-09 1992-10-05 Sumitomo Metal Ind Ltd 試料保持装置
JPH0570922A (ja) 1991-08-09 1993-03-23 Koichi Moriya 複合材の無機化合物による封孔処理法
JPH0611346A (ja) 1992-06-25 1994-01-21 Fujita Corp 自動測量システム
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
JPH0975832A (ja) 1995-09-11 1997-03-25 Nittetsu Hard Kk 耐食耐摩耗性表面溶射層を有するボイラーチューブ
JPH09298190A (ja) 1996-05-02 1997-11-18 Iwaki Coating Kogyo:Kk ドライエッチング装置用電極の製造方法
US5925228A (en) * 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
JPH10277707A (ja) 1997-04-03 1998-10-20 Mishima Kosan Co Ltd 連続鋳造用鋳型に使用する鋳型片及びその製造方法
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
JP2000164583A (ja) 1998-06-24 2000-06-16 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP3066007B2 (ja) * 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
JP4136137B2 (ja) 1998-11-26 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP4272786B2 (ja) 2000-01-21 2009-06-03 トーカロ株式会社 静電チャック部材およびその製造方法
JP2002088462A (ja) 2000-09-14 2002-03-27 Nippon Steel Corp 封孔処理方法及び封孔処理された溶射皮膜とその皮膜を施したファンまたはブロワー
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP3388228B2 (ja) * 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US20040081746A1 (en) * 2000-12-12 2004-04-29 Kosuke Imafuku Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
WO2002048421A1 (en) 2000-12-12 2002-06-20 Tokyo Electron Limited Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
JP2002228803A (ja) 2001-01-30 2002-08-14 Konica Corp 低反射積層体の製造方法及び低反射積層体
US6830622B2 (en) 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
JP4279044B2 (ja) 2003-05-13 2009-06-17 ヤマハ発動機株式会社 部品認識装置及び同装置を備えた表面実装機

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658163A (ja) * 1992-08-08 1994-03-01 Mazda Motor Corp ロータリピストンエンジン
CN1110832A (zh) * 1994-02-15 1995-10-25 松下电器产业株式会社 真空等离子处理装置
JPH08162444A (ja) * 1994-12-08 1996-06-21 Tokyo Electron Ltd プラズマ処理装置及びその制御方法
CN1138746A (zh) * 1995-05-24 1996-12-25 松下电器产业株式会社 气体传热等离子体处理装置
US5868848A (en) * 1995-06-07 1999-02-09 Tokyo Electron Limited Plasma processing apparatus
JPH09115884A (ja) * 1995-10-20 1997-05-02 Sony Corp プラズマ装置およびこれを用いたドライエッチング方法
JP2000173988A (ja) * 1998-12-01 2000-06-23 Sumitomo Metal Ind Ltd 基板保持台、及びプラズマ処理装置
JP2000183038A (ja) * 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
JP2001210621A (ja) * 2000-01-26 2001-08-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2003031553A (ja) * 2001-07-16 2003-01-31 Nec Kansai Ltd プラズマエッチング装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484062A (zh) * 2009-08-21 2012-05-30 朗姆研究公司 测量晶片偏压的方法与装置
CN102484062B (zh) * 2009-08-21 2015-03-04 朗姆研究公司 测量晶片偏压的方法与装置
CN103165494A (zh) * 2011-12-08 2013-06-19 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN103165494B (zh) * 2011-12-08 2015-12-09 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN106104775A (zh) * 2014-01-31 2016-11-09 应用材料公司 腔室涂层
CN106104775B (zh) * 2014-01-31 2019-05-21 应用材料公司 腔室涂层

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