KR100540051B1 - 플라즈마 처리 장치, 링부재 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치, 링부재 및 플라즈마 처리 방법 Download PDF

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Publication number
KR100540051B1
KR100540051B1 KR1020040008149A KR20040008149A KR100540051B1 KR 100540051 B1 KR100540051 B1 KR 100540051B1 KR 1020040008149 A KR1020040008149 A KR 1020040008149A KR 20040008149 A KR20040008149 A KR 20040008149A KR 100540051 B1 KR100540051 B1 KR 100540051B1
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South Korea
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ring member
ceramic
group
plasma
substrate
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Expired - Fee Related
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KR20040072467A (ko
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사사키야스하루
모리야츠요시
나가이케히로시
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동경 엘렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020040008149A 2003-02-07 2004-02-07 플라즈마 처리 장치, 링부재 및 플라즈마 처리 방법 Expired - Fee Related KR100540051B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003031278 2003-02-07
JPJP-P-2003-00031278 2003-02-07
JPJP-P-2003-00398334 2003-11-28
JP2003398334A JP4503270B2 (ja) 2002-11-28 2003-11-28 プラズマ処理容器内部材

Publications (2)

Publication Number Publication Date
KR20040072467A KR20040072467A (ko) 2004-08-18
KR100540051B1 true KR100540051B1 (ko) 2006-01-11

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KR1020040008149A Expired - Fee Related KR100540051B1 (ko) 2003-02-07 2004-02-07 플라즈마 처리 장치, 링부재 및 플라즈마 처리 방법

Country Status (4)

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US (2) US20050103275A1 (enExample)
KR (1) KR100540051B1 (enExample)
CN (1) CN100418187C (enExample)
TW (1) TW200501253A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180006524A (ko) * 2016-07-07 2018-01-18 세메스 주식회사 기판 처리 장치

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KR101949406B1 (ko) * 2016-07-07 2019-02-20 세메스 주식회사 기판 처리 장치

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US20050103275A1 (en) 2005-05-19
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CN100418187C (zh) 2008-09-10
TW200501253A (en) 2005-01-01
CN1521805A (zh) 2004-08-18
US8043971B2 (en) 2011-10-25

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