TW523898B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TW523898B
TW523898B TW090124509A TW90124509A TW523898B TW 523898 B TW523898 B TW 523898B TW 090124509 A TW090124509 A TW 090124509A TW 90124509 A TW90124509 A TW 90124509A TW 523898 B TW523898 B TW 523898B
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TW
Taiwan
Prior art keywords
electrode
patent application
semiconductor wafer
scope
item
Prior art date
Application number
TW090124509A
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English (en)
Inventor
Masamoto Tago
Yoshihiro Tomita
Kenji Takahashi
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Nec Corp
Mitsubishi Electric Corp
Toshiba Corp
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Application filed by Nec Corp, Mitsubishi Electric Corp, Toshiba Corp filed Critical Nec Corp
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Publication of TW523898B publication Critical patent/TW523898B/zh

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Description

523898 五、發明説明（1 ) 發明背景 本發明係關於一種半導體裝置及其製造之方法，其中在 半導體晶片上之電極和在基板上之電極係以彼此相對地作 電性連接。 尤其’本發明係針對半導體裝置之黏接的結構及其黏接 的方法。 在半導體裝置的覆晶置放方面，通常都是使用金屬黏接 當作連接結構，以獲得電性連接。 此處，這樣的金屬黏接常常使用包含Sn和Pb之二元合 金接合物，或包含Sn之超複雜的接合物合金當作主要成 份。 尤其’有一種稱爲”C4”（控制晶片下沉連接）之結構當作 覆晶置放結構。 參考第1 A圖和第1B圖，下面會說明相關技術之連接 結構。 使用具有優良接合物可濕性之位障金屬，如Cu和Ni， 當作半導體晶片1上之電極2和提供半導體晶片1在其上 之基板4上的電極2。 就此種結構而言，包含Sn和Pb之接合物20可藉由電 鍍或濺鍍形成在電極2之上，然後藉由加熱將其溶化，因 此會在電極2之上形成球形。 因此，接合物隆起塊就形成在基板4之上，而半導體晶 片1則被放置在該接合物隆起塊之上。 然後，將半導體晶片1放置在基板4之上，再藉由加熱 523898
五、發明説明（2 ) 使其溶化，接着再用接合物20黏接。 在此情形下所得到的連接結構，當作電極2之Cu和當 作接合物20之Sn係藉由金屬間混合物層5a和5b的形成 而連接。因此，半導體晶片1和基板4的電性連接係經由 接合物20。
在這種情形下，接合物20會在半導體晶片1和基板4 之間形成一個空間，使可以減緩因半導體晶片1和基板4 之間熱膨脹不同所產生之應力密度。 在接合物20係SnPb的共熔合金之情形下，可使用Ni 或CrCu/Cu之位障金屬當作半導體晶片1之電極2。 二擇其一地，當使用具有高熔點之Pb95%和Sn5%的接 合物當作電極2時，可以使用由Cu製成之位障金屬。
藉由採用該C4連接，連接可以只藉由加熱而沒有電極 2或半導體晶片1之負載就可完成。因爲有此優點，所以 C4連接將非常適合置放其電極被排放在電路表面上之半 導體晶片區域陣列。 再者，還有另一種技術被揭露，就是有關於使用Au柱 栓隆起物當作連接結構，以實現覆晶置放的電性連接之 Au隆起物接觸黏接（無接合物）技術。 參考第2 A圖和第2B圖，下面將說明另一相關技術之 接觸黏接技術。 藉由使用Au線黏接，在半導體晶片1的電極24之上， 形成一 Au柱栓隆起物23。接着，以Au平板22覆蓋將被 放置在半導體晶片1上之相對基板4的電極2。在此情形 -4- 523898 五、發明説明（3 ) 下，Au柱栓隆起物23和Au平板22可以藉由加熱和加壓 ，使彼此相互連接。 由於此黏接技術，所以可以使用正常所用之A1電極當 作半導體晶片1之電極24。再者，Au格外地可以抗氧化 。因此，連接可以藉由加熱和加壓簡單地完成。 但是，保持在高溫或濕氣循環下，上述由第1 A圖和第 1 B圖圖示之C4所產生之連接的可靠度很差。 當使用共熔合金接合物和使用Cu當作電極時，半導體 晶片之電極，會在組合或置放封裝體期間，藉由重複加熱 接合物而溶化或溶解。結果，電極之基底膜（下位層）的黏 性會退化。 而且，不能採用正常所用之A1當作電極。因此，具有 特定規格之電極就變得有必要，而此會造成成本增加。 此外，即使當在高溫的使用環境下，藉由使用具有特定 規格之位障金屬，完成使用共鎔合金接合物之C4連接時 ，金屬間混合物層可藉由位障金屬和Sn之間的固相擴散 反應形成。 在這種情形下，構成接合物之Sn靠近介面，而且溶解 或溶化進入Pb之Sn會擴散，所以Pb的分凝發生在金屬 間混合物層附近。 因此，金屬間混合物層和分凝的Pb層在機械特性上有 很大的不同，所以會因溫度循環而破壞應力密度。 在另一方面，可以將正常所用之A1電極用在使用示於 第2 A圖和第2B圖的Au柱栓隆起物之接觸黏接。但是， 523898 五、發明説明（4 ) 在形成Au柱栓隆起物期間，一起使用負載或超音波，會 造成很大的撞擊。 此外，藉由使用Au平板可以形成相類的結構，但是， 在黏接期間，黏接必須在300°C至400°C之間之過高的溫 度範圍下，應高負載完成，以造成用於黏接表面之可塑性 變形，和形成具有足夠黏性之表面。 因此，半導體晶片會被破壞與否，可能會改變具有半導 體晶片上（尤其是在電路表面上）的電極之半導體晶片區域 陣列的特性，所以使得很難採用上述之黏接技術。 發明總述 因此，本發明之目的係要提供一種只要可靠度不會因半 導體晶片之黏接結構，保持在高溫下或溫度循環而退化， 就可以具有穩定黏接結構而沒有缺陷之半導體裝置。 本發明之另一目的係要提供一種在可靠度不會因半導體 晶片之黏接結構，保持在高溫或溫度循環而退化的條件下 ，在低負載和低加熱溫度下，就可以具有穩定黏接結構而 沒有缺陷之半導體裝置的製造方法。 根據本發明之半導體裝置包含一半導體晶片。就該結構 而言，基板係相對於半導體晶片放置。第一電極係位在半 導體晶片上，而第二電極則係位在基板上。 再者，金屬間混合物層係位在第一電極和第二電極之間。 在此情形下，每一個第一和第二電極都是由預定的電極 材料製成的。金屬間混合物層係由至少供應第一和第二電 極的其中之一之電極材料和黏接材料製成的。 -6- 523898 五、發明説明（5 ) 此處’母一個弟一'和弟一電極最好都具有相同的形狀。 例如，形狀可以爲凸面形。 第一和第二電極的尺寸可以彼此相異。例如，第一和第 二電極的任何其中之一爲凹面形，而另一則可爲凸面形。 第一電極可自半導體晶片的表面突出，然後在第一電極 上形成黏接材料，以覆蓋整個第一電極。 二擇其一地，第一電極自半導體晶片的表面突出，然後 在第一電極的上表面之上形黏接材料。 黏接材料可形成一具有開口區之區域，該開口區小於第 一和第二電極的任何其中之一之區域。 在此，基板可用其他的半導體晶片取代。 電極材料可爲Cu或Cu合金，而黏接材料則可爲Sn。 在此情形下，電極材料至少可自由鎳，金和它們的合金 所組成之組合中選擇其中之一^，而黏接材料則至少可自由 錫，銦，銻和紀所組成之組合中選擇其中之一。 如上所述，在根據本發明的黏接結構中，黏接材料係要 完全擴散，使得藉由電極材料和黏接材料之間的擴散，可 以形成金屬間混合物層，因此在半導體晶片上的電極和在 基板上的電極之間可以得到電性連接。 因此，黏接材料層不會留在黏接界面，所以可以藉由金 屬間混合物層實施黏接結構。 根據本發明，金屬間混合物層與藉由擴散而形成之電極 具有精確的界面，所以與上述之相關技術相較，會有很高 的強度。 -7- 523898 五、發明説明（6 ) 再者，黏接材料層會轉變成金屬間混合物層。因此，如 在貫使用時，在局溫環境或溫度循環下之相關技術，軟 的黏接材料不會變成金屬間混合物層。 此外，因爲黏接材料完全擴散，所以使其可以得到沒有 缺陷之黏接部分，如分凝，而可以改善可靠度。 在根據本發明之黏接方法中，係使用能擴散進入電極材 料之單一金屬材料當作黏接材料。 在這種情形下，黏接材料要非常薄地形成在電極上。在 沉積之後，藉由加壓和加熱，黏接材料會完全擴散，而經 由金屬間混合物層黏接。 根據本方法，擴散黏接材料之持續時間變得非常短，且 具有高可靠度之黏接部分可以不用負載而被實現。 圖式簡述 第1A圖和第1B圖爲半導體裝置之相關黏性結構的橫 截面圖； 第2 A圖和第2B圖爲另一半導體裝置之相關連接結構 和相關連接方法的橫截面圖； 第3A圖和第3B圖爲根據本發明第一實施例之半導體 裝置，其連接結構和連接方法之橫截面圖； 第4A圖和第4B圖爲根據本發明第一實施例之半導體 裝置，其另一種連接結構和另一種連接方法之橫截面圖； 第5圖爲根據本發明第二實施例之半導體裝置，其連接 結構和連接方法之橫截面圖； 第6圖爲根據本發明第二實施例之半導體裝置，其另一 523898 五、發明説明（8 ) 因此，當作黏接材料3之Sn和當作電極2之Cu會發生 反應而形成金屬間混合物層5，如第3B圖所示。所以’ 黏接製程完成。 在此種獲得的黏接部分之結構中，Sn貢獻出來，與Cn 完全合金。因此，由Cu製成之電極2係經由CuSn製成 之金屬間混合物層5，使彼此相互黏接。 在此情形下，會有幾種具有不同Cu和Sn組成比例之金 屬間混合物層，形成成層形狀在金屬間混合物層5之中。 參考第4 A圖和第4B圖，Sn藉由加熱擴散進入Cu。尤 其，Sn成長進入各層之中（5a，5b和5c)，使層中之Sn濃 度程度（斜率）相等。當擴散進行夠久時，Sn會變成單一的 金屬間混合物層5。 不於第3圖和第4圖之此種獲得的黏接部分係由一兀合 金製成的。因此，不會形成不同於藉由經過擴散之SnPn 合金黏接之連接的分凝層。 再者，因爲合金層很均勻地自介面溢出，所以黏接部分 對於外部應力具有很高的可靠度。 在此，雖然半導體晶片1與基板4黏接，但是半導體晶 片1可以與其他的半導體晶片黏接，也可以得到相同的結 果。 此外，雖然黏接方法中金屬間混合物層5係藉由加壓， 加熱和擴散而形成的’但是金屬間混合物層5可以在加壓 和加熱的初步黏接步驟之後’藉由在預定溫度下’經由加 熱層加熱之擴散而形成。 -10- 523898 五、發明説明（9 ) 此外，雖然不執行電極之黏接表面的預處理，但是可先 用藉由激化氬氣，氧氣或氟氣所產生之電漿照射過，使得 可以移除在表面上之有機材料或氧化物，以完成黏接製程。 (第二實施例） 下面將參考第5圖說明本發明第二實施例之製作。 藉由濺鍍技術形成示於第5圖之電極2a。接着，基於 由絕緣膜1 〇覆蓋之接線圖案的延伸性，透過蝕刻製程， 在電極2的上部露出凹槽部分。 藉由無電鍍的使用，形成面積小於凹槽部分之電極2b ，所以電極2b的表面會形成凸面形，因此可以得到想要 的連接結構。 在此，在第5圖中，雖然只在電極2a之上形成黏接材 料3，但是黏接材料3可至少形成在相對的電極2a和2b 其中之一上’如弟6圖和第7圖所不。 尤其，黏接材料3只形成在示於第6圖的電極2b之上 。另一方面，黏接材料3可形成在示於第7圖的電極2a 和電極2b兩者之上。 此處’雖然具有凸面形之電極2b係使用無電鍍而形成 的，但是也可藉由電解電鍍形成，以獲得較厚的膜厚。二 擇其一地’具有凸面形之電極可以藉由其他的方法形成。 (第三實施例） 下將參考第8圖說明本發明第三實施例之製作。 每一個相對的電極2a和2b都具有相同的形狀，且都藉 由無電鍍製作。在此情形下，每一個電極2a和2b都形成 -11- 523898 五、發明説明（10) 凸面形’因此可以獲得根據本發明之黏接部分。 雖然在電極2a和電極2b上都形成黏接材料3，但是可 以在相對的電極2a和2b其中之一的任何一方之上，形成 黏接材料層，以達到相同的效果，如第9圖所示。 尤其’黏接材料3係形成在電極2a之上，如第9圖所 示。 在此情形下，雖然可以藉由無電鍍的使用，形成具有凸 面形之電極2b，但是在使用電解電鍍製作較厚膜厚之情形 下’也可以達到相同的效果。二擇其一地，可以藉由使用 柱栓隆起物或其他的方法形成具有凸面形之電極。 再者’在示於第9圖的電極2之上表面上，形成黏接材 料3。但是，在突出的電極之情形下，黏接材料3可以覆 蓋側表面和上表面，如第1 0圖所示。 此外，黏接材料3可形成在面積小於電極2之上表面的 區域上。二擇其一地，黏接材料3可藉由滴下黏接材料而 在電極2上形成半球形。 再者，當電極2形成在半導體晶片1的背面，且放置許 多半導體晶片1時，形成穿入的電極2，以作爲黏接，如 第1 1圖所示。 此處，下面會更詳細地說明此種黏接方法。 首先，將電極2埋入半導體晶片1之中，如第：[丨a圖所 示。 然後，從背面硏磨該埋入的電極2 ，因此可以露出電 極2的表面，如第1 1 B圖所示。 -12- 523898 五、發明説明（Π) 其次，藉由乾式蝕刻，選擇性蝕刻矽，因而可以形成突 出的電極2，如第Π C圖所示。 最後，藉由無電鍍Sn，電鍍該突出的電極2之整個表 面，再提供黏接材料3，使其與電極2黏接，如第1 1D圖 所示。 下面將參考第1 2A圖和第1 2D圖說明另一個實施例之 製作。 首先’將電極2埋入半導體晶片丨之中，如第12A圖所 不 ° 然後，藉由硏磨製程，使曝露出該埋入的電極2，如第 12B圖所示。 接著，將黏接材料3提供在電極2的上表面之上，如第 1 2 C圖所示。 其次，藉由乾式蝕刻，選擇性蝕刻矽，使其與電極2黏 接，如第12D圖所示。 在上述之實施例中，電極2係由Cu製成的，而黏接材 料3則是Sn。但是，黏接材料並不侷限於上述之材料， 如In，也可以用以擴散進入由Cu製成之電極2中，形成 金屬間混合物層之材料。 二擇其一地，雖然連接溫度可能會變得更高，但是可以 用Pb當作黏接材料，用以形成金屬間混合物層。 再者，黏接材料可以爲在整體比例中會溶解或溶化之單 一化合物，如Ni，雖然不會形成由Sb和Pb製成之金屬 間混合物層，但是能夠得到根據本發明之黏接結構。 -13- 523898 五、發明説明（12) 此外，可以選擇Ni或Au當作電極2。在此情形下，可 以選擇黏接材料，使可以和電極材料形成金屬間混合物層。 (範圍） 接着，下面將根據參考第3A圖和第3B圖之本發明， 說明範例之製作。 回來參考第3圖，在半導體晶片1上之電極2係由Cu 製成的，且其厚度爲5//m，而在基板4上之電極2也是 由Cu製成的，且其厚度爲1 8 // m。此外，黏接材料3爲 Sn，而其厚度爲0.5/z m。 在電極2彼此相互對準之後，應用負載，使得Sll表面 彼此相互完全接觸，然後在Sn之熔點300°C下加熱。 因此，Sn會與電極2的Cu反應，所以會因這樣的反應 而成功地形成固體溶液或金屬間混合物層。 藉由反應而形成之金屬間混合物層5具有300°C之熔點 或更高。液相之黏接部分在藉由熔點或更高溫的加熱後會 變成固相，因此可以完成黏接。 在如此獲得的黏接部分之結構中，S η完全貢獻，而與 Cu合金，使由Cii製成之電極2可藉由CuSn金屬間混合 物層5而黏接。 在這樣的金屬間混合物層5之中，會形成組成比例在 Cu和Sri之間之幾種不同的金屬間混合物層形狀。 藉由在上述狀態下持續加熱，可以獲得示於第4圖之黏 接部分。S η會藉由加熱而擴散進入c u之中。在這樣情形 下’ S η會長成成層形狀（5 a，5 b和5 c)，使S η濃度斜率 -14- 523898 五、發明説明（13) (程度）相等。當擴散進行夠久時’最後會形成單一的金屬 間混合物層5。 示於第3圖和第4圖之此種獲得的Cu和Sn黏接部分係 由二元合金製成的。因此，不會形成不同於藉由經過擴散 之SnPn合金黏接之連接的分凝層。 再者，因爲合金層很均勻地自介面溢出，所以黏接部分 對於外部應力具有很高的可靠度。 在此，供應的Sn層具有0.5// m之厚度。但是，即使當 Sn層根據加熱時間或擴散時間而具有〇. 5 // m和2 // m之 間的厚度時，若與電極表面接觸可能係根據電極表面的平 坦度則形成黏接部分之厚度可爲0.5〜0.1// m，或更薄。 再者，雖然半導體晶片丨係與基板4黏接，但是在電極 2的厚度和半導體晶片1的厚度相同之情形下，半導體晶 片1可以與其他的半導體晶片黏接，也可以得到相同的結 果。 此外，雖然在加壓之後的加熱溫度選擇熔點或更高的溫 度（300°C )，但是在熔點或更低的溫度下，也可以得到根據 本發明之黏接結構。 當加熱溫度選擇180°C時，當作黏接材料3之Sn不會 溶化，而是在固相下藉由擴散與Cu反應，而形成金屬間 混合物層5。 在此情形下，因爲沒有出現液相狀態，所以不會形成固 體溶液。形成黏接部分需要足夠的時間，以成功形成金屬 間混合物層。在這樣情形下，也可以形成均勻的金屬間混 -15- 523898 五、發明説明（14) 合物層5。 本發明已揭露相關的幾個實施例，其很有可能使本發明 中的那些技巧，以各種其他的方式實施。 符號之說明 1 半導體晶片 2 電極 2a，2b 電極 3 黏接材料 4 基板 5 金屬間混合物層 5 a，5 b，5 c 層 10 絕緣膜 20 接合物 22 Au平板 23 A u柱栓隆起物 24 電極 -16-

Claims (1)

  1. 523898 91JL 13 六、申請專利範圍 第901 24509號「半導體裝置及其製造方法」專利案 (91年11月13日修正） 六申請專利範圍： 1 . 一種半導體裝置，包含： 半導體晶片； 相對於該半導體晶片放置之基板； 位在該半導體晶片上之第一電極； 位在該基板上之第二電極；及 放置在該第一電極和該第二電極之間之金屬間混合 物層， 該第一和第二電極的每一個都是由預定電極材料製 成的，及 該金屬間混合物層係由該電極材料和至少供應到該 第一和第二電極其中之一之黏接材料所製成的。 2 .如申請專利範圍第1項之裝置，其中該第一和第二電 極的每一個都具有相同的形狀。 3 .如申請專利範圍第2項之裝置，其中該形狀包含凸面 形。 4 .如申請專利範圍第1項之裝置，其中該第一和第二電 極在尺寸方面彼此並不相同。 5 .如申請專利範圍第4項之裝置，其中該第一和第二電 極其中之一的任何一方具有凹面形，而另一方爲凸面 形。 523898 、申請專利範圍 6 .如申請專利範圍第1項之裝置，其中該第一電極係自 該半導體晶片的表面突出，且 將該黏接材料供應在該第一電極上，以完全覆蓋該 第一電極。 7 ·如申請專利範圍第1項之裝置，其中該第一電極係自 該半導體晶片的表面突出，且 將該黏接材料供應在該第一電極的上表面之上。 8 ·如申請專利範圍第1項之裝置，其中該黏接材料係被 供應到一區域，該區域具有之開口面積小於該第一和 第二電極其中之一的任何一方之面積。 9 .如申請專利範圍第1項之裝置，其中該基板可以由其 他的半導體晶片取代。 1 0 .如申請專利範圍第1項之裝置，其中該電極材料係 Cu或Cu的合金，而該黏接材料爲Sn。 1 1 .如申請專利範圍第1項之裝置，其中該電極材料爲 至少選擇自由鎳，金和它們的合金所組成之組合的其 中之一，而該黏接材料則至少可自由錫，銦，銻和鈀 所組成之組合中選擇其中之一。 12·—種製造半導體裝置之方法，其中具有第一電極之 半導體晶片和具有第二電極之基板係彼此相對而電性 連接的，而且該第一和第二電極的每一個都是以預定 電極材料形成的，該方法包含下列步驟： 至少在該第一和第二電極的其中之一上，形成預定 523898 六、申請專利範圍 的黏接材料； 藉由電極材料和該黏接材料之間的擴散，形成金屬 間混合物層；及 經由該金屬間混合物層，黏接該第一電極和該第二 電極。 1 3 ·如申請專利範圍第1 2項之方法，其中該黏接材料係 形成在該第一和第二電極兩者之上。 1 4 ·如申請專利範圍第1 2項之方法，其中該黏接材料形 成在一區域之中，該區域具有之開口面積小於該第〜 和弟一電極其中之一的任何~^方之面積。 1 5 .如申請專利範圍第1 2項之方法，其中該金屬間混合 物層形成’使得該黏接材料因爲該黏接材料完全擴散 進入該電極材料，而不會保留在黏接界面之上。 1 6 ·如申請專利範圍第1 2項之方法，其中該黏接材料包 含能夠擴散進入該電子材料之單一金屬材料。 17.—種製造半導體裝置之方法，其中具有第一電極之 半導體晶片和具有第二電極之基板係彼此相對而電性 連接的，而且該第一和第二電極的每一個都是以預定 電極材料形成的，該方法包含下列步驟： 至少在該第一和第二電極的其中之一上，形成非常 薄的預定黏接材料； 將該第一電極放在對於該第二電極適當的位置； 藉由應用壓力，使該第一電極可以經由該黏接材料 523898 六、申請專利範圍 與該第二電極黏接； 將該黏接材料加熱； 使該黏接材料完全擴散進入該電極材料，以在該加 熱步驟期間形成金屬間混合物層；及 該第一電極經由該金屬間混合物層與該第二電極黏 接。 1 8 ·如申請專利範圍第1 7項之方法，還包含下列步驟： 將該第一電極埋入該半導體晶片之中； 硏磨該半導體晶片； 藉由乾式蝕刻，選擇性處理該半導體晶片，使突出 該第一電極；及 完全供應該黏接材料至該第一電極的表面。 1 9 ·如申請專利範圍第1 7項之方法，還包含下列步驟： 將該第一電極埋入該半導體晶片之中； 硏磨該半導體晶片，以曝露該第一電極； 供應該黏接材料在曝露的該第一電極之上；及 藉由乾式鈾刻，選擇性處理該半導體晶片，使突出 該第一電極。 2〇 .如申請專利範圍第1 7項之方法，其中該黏接材料被 供應到一區域，該區域具有之開口面積小於該第一和 第二電極其中之一的任何一方之面積。 2 1 .如申請專利範圍第1 7項之方法，其中該黏接材料具 有熔點，且加熱步驟之溫度係熔點或更高。 523898 —----- 1 ---——_ 六、 申請專利範圍 22 .如申請專利範圍第丨7項之方法，其中該黏接材料具 有熔點， 加熱步驟之溫度係熔點或更低，及 該金屬間混合物層係藉由固相擴散形成的。 23 ·如申請專利範圍第1 7項之方法，其中在該第一和第 二電極之間的黏接面被活化之後，完成壓力應用步驟 和加熱步驟。 24.如申請專利範圍第23項之方法，其中該活化係藉由 至少自由激化氬氣，氧氣和氟氣而產生之電漿所組成 之組合，選擇其中之一氣體照射而完成。
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