JP5139347B2 - 電子部品装置及びその製造方法 - Google Patents
電子部品装置及びその製造方法 Download PDFInfo
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- JP5139347B2 JP5139347B2 JP2009035674A JP2009035674A JP5139347B2 JP 5139347 B2 JP5139347 B2 JP 5139347B2 JP 2009035674 A JP2009035674 A JP 2009035674A JP 2009035674 A JP2009035674 A JP 2009035674A JP 5139347 B2 JP5139347 B2 JP 5139347B2
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- electronic component
- hole
- metal member
- silicon wafer
- wiring board
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- B81—MICROSTRUCTURAL TECHNOLOGY
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Description
本発明の実施形態を説明する前に、本発明に関連する関連技術の問題点について説明する。図1は関連技術の電子部品装置を示す断面図、図2は関連技術におけるシリコンウェハに凹部及びスルーホールを形成する方法を示す断面図である。
図3〜図8は本発明の実施形態の電子部品装置の製造方法を示す断面図である。本実施形態の電子部品装置の製造方法では、まず、図3に示すようなシリコンウェハ10を用意する。シリコンウェハ10の厚みは例えば700〜800μmであり、シリコンウェハ10には多数の配線基板領域Aが画定されている。
Claims (10)
- シリコン基板と、
前記シリコン基板の上面側に設けられた凹部と、
前記凹部の底面側の前記シリコン基板を貫通して形成されたスルーホールと、
前記シリコン基板の両面及び前記スルーホールの内面に形成された絶縁層と、
前記スルーホール内の下部からその高さ方向の途中まで形成された下側導体部と、前記スルーホール内の前記下側導体部の上に形成された接続金属部材とにより構成される貫通電極と、
前記シリコン基板の下面側に前記絶縁層を介して形成され、前記下側導体部に接続された配線層と、
前記凹部の底部に実装され、電子部品の端子金属部材が前記貫通電極の前記接続金属部材に突き刺さって接続された前記電子部品とを有することを特徴とする電子部品装置。 - 前記スルーホールはストレート形状を有し、前記電子部品はその下面が前記凹部の底面に当接していることを特徴とする請求項1に記載の電子部品装置。
- 前記貫通電極の前記接続金属部材はインジウム又はスズからなり、前記電子部品の前記端子金属部材は銅、金、又は金合金からなることを特徴とする請求項1に記載の電子部品装置。
- 前記下側導体部と前記接続金属部材との間に金属バリア層がさらに形成されていることを特徴とする請求項1に記載の電子部品装置。
- 前記電子部品はMEMS部品であることを特徴とする請求項1乃至4のいずれか一項に記載の電子部品装置。
- 複数の配線基板領域が画定されたシリコンウェハを厚み方向の途中まで加工することにより穴部を形成する工程と、
前記シリコンウェハの両面及び前記穴部の内面に絶縁層を形成する工程と、
前記シリコンウェハを上下反転させて裏面側を上側に向けた状態とし、前記シリコンウェハの上面側の絶縁層に開口部を形成する工程と、
前記絶縁層をマスクにして前記開口部を通して前記シリコンウェハを前記穴部に到達するまで加工することにより、凹部を形成する工程と、
前記絶縁層を除去することにより、前記シリコンウェハに前記凹部とそれに連通して前記穴部から形成されるストレート形状のスルーホールを得る工程と、
前記シリコンウェハの両面及び前記スルーホールの内面に絶縁層を形成する工程と、
電解めっきによって前記スルーホール内に下側導体部及び接続金属部材を順に形成して貫通電極を得る工程と、
前記シリコンウェハの下面側の前記絶縁層の上に前記下側導体部に接続される配線層を形成する工程とを含む方法によって得られる配線基板と、下面側に端子金属部材を備えた電子部品とを用意する工程と、
加熱雰囲気で、前記配線基板の前記接続金属部材を軟化させ、前記電子部品の前記端子金属部材を前記接続金属部材に突き刺して接続することにより、前記電子部品を前記配線基板の前記凹部に実装する工程とを有することを特徴とする電子部品装置の製造方法。 - 前記電子部品を前記配線基板の実装する工程において、
前記電子部品はその下面が前記凹部の底面に当接して配置されることを特徴とする請求項6に記載の電子部品装置の製造方法。 - 前記貫通電極の前記接続金属部材はインジウム又はスズからなり、前記電子部品の前記端子金属部材は銅、金、又は金合金からなることを特徴とする請求項6に記載の電子部品装置の製造方法。
- 前記貫通電極の前記接続金属部材はインジウムからなり、前記電子部品の前記端子金属部材は金からなり、
前記電子部品を前記配線基板に実装する工程において、
前記配線基板の前記接続金属部材に、前記電子部品の前記端子金属部材と反応して得られるインジウム・金合金が形成されることを特徴とする請求項6に記載の電子部品装置の製造方法。 - 前記電子部品はMEMS部品であることを特徴とする請求項6乃至9のいずれか一項に記載の電子部品装置の製造方法。
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US9704793B2 (en) | 2011-01-04 | 2017-07-11 | Napra Co., Ltd. | Substrate for electronic device and electronic device |
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US20150191349A1 (en) * | 2012-07-11 | 2015-07-09 | Hewlett-Packard Development Company, L.P. | Semiconductor secured to substrate via hole in substrate |
US9686864B2 (en) | 2012-07-31 | 2017-06-20 | Hewlett-Packard Development Company, L.P. | Device including interposer between semiconductor and substrate |
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