JP6533066B2 - 電子装置 - Google Patents
電子装置 Download PDFInfo
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- JP6533066B2 JP6533066B2 JP2015029628A JP2015029628A JP6533066B2 JP 6533066 B2 JP6533066 B2 JP 6533066B2 JP 2015029628 A JP2015029628 A JP 2015029628A JP 2015029628 A JP2015029628 A JP 2015029628A JP 6533066 B2 JP6533066 B2 JP 6533066B2
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- 239000000758 substrate Substances 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
1 基板
111 主面
112 裏面
14 素子配置用凹部
141 素子配置用凹部側面
142 素子配置用凹部底面
17 貫通凹部
171 貫通凹部内面
172 開口
2 絶縁層
21 貫通凹部内面絶縁部
211 端面
3 導電層
31 シード層
32 メッキ層
33 素子配置用パッド
34 裏面側パッド
35 貫通凹部内導電部
351 端面
36 被覆部
4 金属充填部
41 (金属充填部の)端面
51 絶縁膜(第1絶縁膜)
52 絶縁膜(第2絶縁膜)
61 裏面電極パッド
7 封止樹脂部
8 電子素子
81 はんだ
Claims (19)
- 厚さ方向において互いに反対側を向く主面および裏面を有し、半導体材料であるSiの単結晶よりなる基板と、
上記基板に配置された電子素子と、
上記電子素子に導通する導電層と、を備え、
上記主面は、(100)面であり、
上記主面および上記裏面は、上記基板の厚さ方向に直交し、かつ平坦であり、
上記基板には、上記主面から凹む素子配置用凹部と、当該素子配置用凹部から上記裏面に貫通する貫通凹部が形成されており、
上記素子配置用凹部は、上記厚さ方向に対して傾斜する素子配置用凹部側面を有し、
上記貫通凹部は、上記厚さ方向に対して傾斜し、かつ上記裏面につながる貫通凹部内面を有し、
上記貫通凹部は、上記主面側から上記裏面側に向かうほど断面寸法が小とされており、
上記厚さ方向に直交する平面に対する上記貫通凹部内面の傾斜角度は、上記厚さ方向に直交する平面に対する上記素子配置用凹部側面の傾斜角度と同一であり、
上記素子配置用凹部には、上記電子素子が配置されており、
上記貫通凹部には、当該貫通凹部の少なくとも底部を塞ぎ、金属材料が充填された金属充填部が設けられており、
上記導電層は、少なくとも上記貫通凹部から上記裏面にわたって形成されている、電子装置。 - 上記貫通凹部は、上記底部において上記厚さ方向を向く平坦状の開口を有し、
上記金属充填部は、上記開口の全体を塞いでいる、請求項1に記載の電子装置。 - 上記金属充填部は、上記裏面と同じ方向を向く端面を有し、
上記端面は、上記裏面と面一状である、請求項2に記載の電子装置。 - 上記導電層は、上記金属充填部の上記端面を覆う被覆部を有する、請求項3に記載の電子装置。
- 上記金属充填部の上記厚さ方向における寸法は、上記導電層の厚さよりも大である、請求項1ないし4のいずれかに記載の電子装置。
- 上記基板の上記裏面に形成された第1絶縁膜を更に備え、
上記第1絶縁膜は、上記基板と上記導電層との間に介在している、請求項1ないし5のいずれかに記載の電子装置。 - 上記第1絶縁膜は、絶縁材料によって積層形成されている、請求項6に記載の電子装置。
- 上記第1絶縁膜は、ポリイミド樹脂あるいはベンゾシクロブテン樹脂よりなる、請求項7に記載の電子装置。
- 上記裏面に形成された第2絶縁膜を更に備え、
上記導電層は、上記第1絶縁膜と上記第2絶縁膜との間に介在している、請求項6ないし8のいずれかに記載の電子装置。 - 上記裏面に形成された裏面電極パッドを更に備え、
上記裏面電極パッドは、上記導電層に接しており、かつ、上記電子素子に導通している、請求項9に記載の電子装置。 - 上記素子配置用凹部は、上記厚さ方向のうちの一方である第1厚さ方向を向く素子配置用凹部底面を有し、
上記素子配置用凹部底面には、上記電子素子が配置されている、請求項1ないし10のいずれかに記載の電子装置。 - 上記素子配置用凹部底面は、上記厚さ方向に直交する面である、請求項11に記載の電子装置。
- 上記貫通凹部の個数は、複数である、請求項1ないし12のいずれかに記載の電子装置。
- 上記導電層は、上記電子素子を配置するための複数の素子配置用パッドと、上記裏面側に形成された複数の裏面側パッドと、上記複数の素子配置用パッドおよび前記複数の裏面側パッドとを各別に導通させ、かつ複数の上記貫通凹部それぞれに形成された複数の貫通凹部内導電部と、を含む、請求項13に記載の電子装置。
- 上記複数の素子配置用パッドの各々は、上記厚さ方向視において少なくとも一部が複数の上記貫通凹部のいずれかと重なる、請求項14に記載の電子装置。
- 上記導電層は、上記貫通凹部を介して上記素子配置用凹部から上記裏面にわたって形成されている、請求項14に記載の電子装置。
- 上記素子配置用パッドは、上記素子配置用凹部に形成されている、請求項16に記載の電子装置。
- 上記導電層は、シード層と、メッキ層と、を含み、上記シード層は、上記基板と上記メッキ層との間に介在している、請求項1ないし17のいずれかに記載の電子装置。
- 上記素子配置用凹部に充填され、上記電子素子を覆う封止樹脂部を更に備える、請求項1ないし18のいずれかに記載の電子装置。
Priority Applications (2)
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JP6885701B2 (ja) * | 2016-10-17 | 2021-06-16 | ローム株式会社 | 半導体装置 |
JP7269756B2 (ja) * | 2018-05-01 | 2023-05-09 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
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JPH0821763B2 (ja) * | 1986-12-26 | 1996-03-04 | 京セラ株式会社 | 電子回路部品 |
JP3646719B2 (ja) * | 2003-06-19 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP4547290B2 (ja) * | 2005-03-29 | 2010-09-22 | エルジー エレクトロニクス インコーポレイティド | 光源装置の製造方法 |
US7705465B2 (en) * | 2005-04-01 | 2010-04-27 | Panasonic Corporation | Surface-mount type optical semiconductor device and method for manufacturing the same |
US7719099B2 (en) * | 2005-10-21 | 2010-05-18 | Advanced Optoelectronic Technology Inc. | Package structure for solid-state lighting devices and method of fabricating the same |
JP4828248B2 (ja) * | 2006-02-16 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
US20070235739A1 (en) * | 2006-03-31 | 2007-10-11 | Edison Opto Corporation | Structure of heat dissipation of implant type light emitting diode package and method for manufacturing the same |
JP4783718B2 (ja) * | 2006-11-27 | 2011-09-28 | 新光電気工業株式会社 | 照明装置 |
TWI336962B (en) * | 2007-02-08 | 2011-02-01 | Touch Micro System Tech | White light emitting diode package structure having silicon substrate and method of making the same |
JP4600687B2 (ja) * | 2007-03-29 | 2010-12-15 | Tdk株式会社 | 電子部品およびその製造方法 |
JP4809308B2 (ja) * | 2007-09-21 | 2011-11-09 | 新光電気工業株式会社 | 基板の製造方法 |
TW200921942A (en) * | 2007-11-14 | 2009-05-16 | Advanced Optoelectronic Tech | Packaging structure of light emitting diode device and method of fabricating the same |
CN101740678A (zh) * | 2008-11-10 | 2010-06-16 | 富士迈半导体精密工业(上海)有限公司 | 固态发光元件及光源模组 |
KR101064026B1 (ko) * | 2009-02-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
JP5139347B2 (ja) * | 2009-02-18 | 2013-02-06 | 新光電気工業株式会社 | 電子部品装置及びその製造方法 |
JP5615122B2 (ja) * | 2010-10-12 | 2014-10-29 | 新光電気工業株式会社 | 電子部品装置及びその製造方法 |
JP5779748B2 (ja) | 2010-11-02 | 2015-09-16 | リコー電子デバイス株式会社 | 半導体パッケージ及び電子部品実装体 |
US9698563B2 (en) * | 2010-11-03 | 2017-07-04 | 3M Innovative Properties Company | Flexible LED device and method of making |
JP2012142410A (ja) * | 2010-12-28 | 2012-07-26 | Rohm Co Ltd | 発光素子ユニットおよびその製造方法、発光素子パッケージならびに照明装置 |
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