JP2005327984A - 電子部品及び電子部品実装構造の製造方法 - Google Patents
電子部品及び電子部品実装構造の製造方法 Download PDFInfo
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- JP2005327984A JP2005327984A JP2004146406A JP2004146406A JP2005327984A JP 2005327984 A JP2005327984 A JP 2005327984A JP 2004146406 A JP2004146406 A JP 2004146406A JP 2004146406 A JP2004146406 A JP 2004146406A JP 2005327984 A JP2005327984 A JP 2005327984A
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- electronic component
- insulating layer
- passivation film
- wiring pattern
- connection terminal
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- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49158—Manufacturing circuit on or in base with molding of insulated base
- Y10T29/4916—Simultaneous circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
Abstract
【解決手段】 被実装体20の上に、接続端子12とそれを被覆するパシベーション膜14とを備えた電子部品1を、接続端子12を上側に向けて実装する工程と、電子部品1を被覆する絶縁層26を形成する工程と、接続端子12上のパシベーション膜14及び絶縁層26の部分にビアホール26xを形成して接続端子12を露出させる工程と、ビアホール26xを介して接続パッド12に電気的に接続される配線パターン22aを絶縁層上に形成する工程とを含む。
【選択図】 図8
Description
図5及び図6は本発明の第1実施形態の電子部品を示す断面図、図7及び図8は本発明の第1実施形態の電子部品実装構造の製造方法を示す断面図である。第1実施形態では、電子部品として半導体チップを例に挙げて説明する。
図11及び図12は本発明の第2実施形態の電子部品を示す断面図、図13及び図14は本発明の第2実施形態の電子部品実装構造の製造方法を示す断面図である。第2実施形態では、電子部品として積層キャパシタチップを例に挙げて説明する。第2実施形態では、第1実施形態と同一工程についてはその詳しい説明を省略する。
図15及び図16は本発明の第3実施形態の電子部品を示す断面図、図17及び図18は本発明の第3実施形態の電子部品実装構造の製造方法を示す断面図である。第3実施形態では、電子部品として薄膜キャパシタを例に挙げて説明する。第3実施形態では、第1実施形態と同一工程においてはその詳しい説明を省略する。
Claims (16)
- 被実装体の上に、接続端子と該接続端子を被覆するパシベーション膜とを備えた電子部品を、該接続端子を上側に向けて実装する工程と、
前記電子部品を被覆する絶縁層を形成する工程と、
前記接続端子上の前記パシベーション膜及び前記絶縁層の部分にビアホールを形成して前記接続端子を露出させる工程と、
前記ビアホールを介して前記接続パッドに電気的に接続される配線パターンを前記絶縁層上に形成する工程とを有することを特徴とする電子部品実装構造の製造方法。 - 前記電子部品は、一方の面側に前記接続端子が設けられた半導体チップ、一端側及び他端側にそれぞれ前記接続端子が設けられた積層キャパシタチップ、及び誘電体膜が下部電極と上部電極とに挟まれ、前記下部電極及び上部電極が前記接続端子となる薄膜キャパシタのいずれかであることを特徴とする請求項1に記載の電子部品実装構造の製造方法。
- 前記パシベーション膜の材料は、エポキシ樹脂、ポリイミド樹脂、フェノール樹脂、ノボラック樹脂、酸化シリコン、酸化アルミニウム及び酸化タンタルの群から選択されるいずれかであることを特徴とする請求項1又は2に記載の電子部品実装構造の製造方法。
- 前記パシベーション膜は、非感光性樹脂よりなることを特徴とする請求項1に記載の電子部品実装構造の製造方法。
- 前記パシベーション膜は、前記接続端子を選択的に被覆していることを特徴とする請求項1又は2に記載の電子部品実装構造の製造方法。
- 前記電子部品は一端側及び他端側にそれぞれ前記接続端子が設けられた積層キャパシタチップであって、前記パシベージョン膜は前記積層キャパシタチップの全体面を被覆していることを特徴とする請求項1に記載の電子部品実装構造の製造方法。
- 前記被実装体は、配線パターンを備えたコア基板であって、
前記ビアホールを形成して前記接続パッドを露出させる工程において、前記コア基板の配線パターン上の前記絶縁層の部分に前記ビアホールを同時に形成し、
前記配線パターンを前記絶縁層上に形成する工程において、前記ビアホールを介して前記コア基板の配線パターンに接続される前記配線パターンを同時に形成することを特徴とする請求項1又は2に記載の電子部品実装構造の製造方法。 - 前記被実装体は、コア基板、該コア基板上に形成された絶縁層又は凹部を備えたコア基板であり、前記電子部品は、前記コア基板上、前記絶縁層上又は前記コア基板の凹部上に実装されることを特徴とする請求項1又は2に記載の電子部品実装構造の製造方法。
- 前記電子部品の接続端子に電気的に接続される前記配線パターンは、n層(nは1以上の整数)で積層されて形成されることを特徴とする請求項1又は7に記載の電子部品実装構造の製造方法。
- 前記被実装体は、貫通電極を介して相互接続される配線パターンを両面にそれぞれ備えたコア基板であって、前記配線パターンは、前記コア基板の両面側に積層されることを特徴とする請求項9に記載の電子部品実装構造の製造方法。
- 配線パターンと電気的に接続される接続端子と、
前記接続端子を被覆するパシベージョン膜とを有する電子部品であって、
前記電子部品が被実装体上に実装されるとき、前記電子部品は前記接続端子が上側になって絶縁層に埋設されて実装され、該接続端子が、前記絶縁層及びパシベーション膜に設けられるビアホールを介して前記配線パターンに電気的に接続されるようにしたことを特徴とする電子部品。 - 前記電子部品は、一方の面側に前記接続端子が設けられた半導体チップ、一端側及び他端側にそれぞれ前記接続端子が設けられた積層キャパシタチップ、及び誘電体膜が下部電極と上部電極とに挟まれ、前記下部電極及び上部電極が前記接続端子となる薄膜キャパシタのいずれかであることを特徴とする請求項11に記載の電子部品。
- 前記パシベーション膜は、エポキシ樹脂、ポリイミド樹脂、フェノール樹脂、ノボラック樹脂、酸化シリコン、酸化アルミニウム及び酸化タンタルの群から選択されるいずれかであることを特徴とする請求項11に記載の電子部品。
- 前記パシベーション膜は、非感光性樹脂よりなることを特徴とする請求項11に記載の電子部品。
- 前記パシベーション膜は、前記接続端子を選択的に被覆していることを特徴とする請求項11に記載の電子部品。
- 前記電子部品は、一端側及び他端側にそれぞれ前記接続端子が設けられた積層キャパシタチップであって、
前記パシベージョン膜は前記積層キャパシタチップの全体面を被覆していることを特徴とする請求項11に記載の電子部品。
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