KR101113501B1 - 반도체 패키지의 제조 방법 - Google Patents
반도체 패키지의 제조 방법 Download PDFInfo
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- KR101113501B1 KR101113501B1 KR1020090109027A KR20090109027A KR101113501B1 KR 101113501 B1 KR101113501 B1 KR 101113501B1 KR 1020090109027 A KR1020090109027 A KR 1020090109027A KR 20090109027 A KR20090109027 A KR 20090109027A KR 101113501 B1 KR101113501 B1 KR 101113501B1
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- electrode pattern
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- semiconductor chip
- semiconductor package
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000004308 accommodation Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/014—Solder alloys
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
Abstract
Description
Claims (9)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 기판 상에 절연층을 형성시키는 단계;상기 절연층 상에 회로 연결을 하도록 재배선 도금하여 전극 패턴부를 형성시키는 단계;상기 전극 패턴부가 일부 노출되도록 상기 재배선 도금 상부에 보호부를 형성시켜 반도체 칩을 제조하는 단계; 및내측에 수용 공간이 형성된 회로 기판에 상기 반도체 칩을 실장하여 전기적으로 연결하는 단계;를 포함하는 반도체 패키지의 제조 방법.
- 제6항에 있어서,상기 전극 패턴부는 5 ~ 15㎛로 형성시키는 것을 특징으로 하는 반도체 패키지의 제조 방법.
- 제6항에 있어서,상기 전극 패턴부를 형성시키는 단계는,구리(Cu)층을 상기 절연층 상에 스퍼터링(sputtering)하여 형성시키는 단계를 포함하는 것을 특징으로 하는 반도체 패키지의 제조 방법.
- 제6항에 있어서,상기 회로 기판에 상기 반도체 칩을 전기적으로 연결하는 단계는,상기 회로 기판에서 상기 전극 패턴부의 상부까지 연결되는 비아홀을 형성한 이후에 상기 비아홀에 도전 물질을 충진하여 전기적으로 연결되는 비아부를 형성시키는 단계를 포함하는 것을 특징으로 하는 반도체 패키지의 제조 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090109027A KR101113501B1 (ko) | 2009-11-12 | 2009-11-12 | 반도체 패키지의 제조 방법 |
JP2010167116A JP2011109060A (ja) | 2009-11-12 | 2010-07-26 | 半導体パッケージ及び半導体パッケージの製造方法 |
US12/805,334 US20110108993A1 (en) | 2009-11-12 | 2010-07-26 | Semiconductor package and manufacturing method thereof |
US13/557,362 US20120295404A1 (en) | 2009-11-12 | 2012-07-25 | Method of manufacturing semiconductor package |
JP2012174235A JP2012256919A (ja) | 2009-11-12 | 2012-08-06 | 半導体パッケージの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090109027A KR101113501B1 (ko) | 2009-11-12 | 2009-11-12 | 반도체 패키지의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110052112A KR20110052112A (ko) | 2011-05-18 |
KR101113501B1 true KR101113501B1 (ko) | 2012-02-29 |
Family
ID=43973556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090109027A KR101113501B1 (ko) | 2009-11-12 | 2009-11-12 | 반도체 패키지의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20110108993A1 (ko) |
JP (2) | JP2011109060A (ko) |
KR (1) | KR101113501B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5826532B2 (ja) * | 2010-07-15 | 2015-12-02 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
Citations (2)
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KR20010105641A (ko) * | 2000-05-17 | 2001-11-29 | 윤종용 | 웨이퍼 레벨 칩 스케일 패키지 및 그 제조방법 |
US20070052086A1 (en) * | 2004-05-17 | 2007-03-08 | Shinko Electric Industries Co., Ltd. | Electronic parts and method of manufacturing electronic parts packaging structure |
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2009
- 2009-11-12 KR KR1020090109027A patent/KR101113501B1/ko active IP Right Grant
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2010
- 2010-07-26 US US12/805,334 patent/US20110108993A1/en not_active Abandoned
- 2010-07-26 JP JP2010167116A patent/JP2011109060A/ja active Pending
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2012
- 2012-07-25 US US13/557,362 patent/US20120295404A1/en not_active Abandoned
- 2012-08-06 JP JP2012174235A patent/JP2012256919A/ja active Pending
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KR20010105641A (ko) * | 2000-05-17 | 2001-11-29 | 윤종용 | 웨이퍼 레벨 칩 스케일 패키지 및 그 제조방법 |
US20070052086A1 (en) * | 2004-05-17 | 2007-03-08 | Shinko Electric Industries Co., Ltd. | Electronic parts and method of manufacturing electronic parts packaging structure |
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US20120295404A1 (en) | 2012-11-22 |
KR20110052112A (ko) | 2011-05-18 |
JP2012256919A (ja) | 2012-12-27 |
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