KR20080041043A - 관통전극을 구비한 반도체 소자 및 그 형성방법 - Google Patents
관통전극을 구비한 반도체 소자 및 그 형성방법 Download PDFInfo
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- KR20080041043A KR20080041043A KR1020060109132A KR20060109132A KR20080041043A KR 20080041043 A KR20080041043 A KR 20080041043A KR 1020060109132 A KR1020060109132 A KR 1020060109132A KR 20060109132 A KR20060109132 A KR 20060109132A KR 20080041043 A KR20080041043 A KR 20080041043A
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Abstract
Description
Claims (24)
- 절연막이 형성된 활성면과 그 반대면인 비활성면을 가지며, 상기 절연막 상에 패드를 갖는 웨이퍼를 제공하는 단계와;상기 절연막 내에 제1 홀을 형성하는 단계와;상기 제1 홀의 내벽에 제1 홀 절연막을 형성하는 단계와;상기 제1 홀로부터 연장되며 상기 웨이퍼 내에 제2 홀을 형성하는 단계와;상기 제2 홀의 내벽에 제2 홀 절연막을 형성하는 단계;를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제1항에 있어서,상기 제1 홀을 형성하는 단계는,상기 제1 홀의 하단부가 상기 웨이퍼의 활성면에 미치지 아니하도록 상기 절연막을 일부 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제2항에 있어서,상기 제1 홀을 형성하는 단계는,상기 제1 홀이 상기 패드를 관통하도록 상기 패드를 일부 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제1항에 있어서,상기 제1 홀 절연막을 형성하는 단계는,상기 제1 홀 절연막이 상기 패드의 일부를 피복하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제2항에 있어서,상기 제2 홀을 형성하는 단계는,상기 제1 홀 형성시 제거되지 않은 상기 절연막을 제거하고, 이와 동시에 상기 웨이퍼의 상기 활성면과 비활성면 사이를 일부 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제5항에 있어서,상기 제1 홀 형성시 제거되지 않은 상기 절연막을 제거하는 단계는,상기 제1 홀의 하부벽의 일부가 잔류하도록 상기 절연막의 일부를 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제5항에 있어서,상기 제1 홀 형성시 제거되지 않은 상기 절연막을 제거하는 단계는,상기 제1 홀의 하부벽이 잔류되지 않도록 상기 절연막을 제거하는 단계를 포 함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제1항에 있어서,상기 제2 홀 절연막을 형성하는 단계는,상기 제2 홀 절연막을 상기 제1 홀 절연막 상에 형성하고, 이와 동시에 상기 제2 홀의 측벽 및 하부벽에 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제1항에 있어서,상기 제1 홀 및 제2 홀을 전도체로 채워넣어 관통전극을 형성하는 단계와;상기 웨이퍼의 비활성면을 일부 제거하여 상기 관통전극의 일부를 노출시키는 단계;를 더 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제9항에 있어서,상기 관통전극의 일부를 노출시키는 단계는:상기 관통전극의 하단부가 노출되지 않도록 상기 웨이퍼 중에서 상기 비활성면과 활성면 사이를 제거하는 단계와;상기 관통전극의 하단부가 돌출되도록 상기 웨이퍼를 일부 제거하는 단계;를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제9항에 있어서,상기 관통전극의 일부를 노출시키는 단계는,상기 관통전극의 하단부가 일부 제거되도록 상기 웨이퍼 중에서 상기 비활성면과 활성면 사이를 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 제11항에 있어서,상기 관통전극의 일부를 노출시키는 단계 이후에,상기 관통전극의 하단부에 접속단자를 부착시키는 단계를 더 포함하는 것을 특징으로 하는 반도체 소자의 형성방법.
- 절연막이 형성된 활성면과 그 반대면인 비활성면을 가지며, 상기 절연막 상에 패드와 상기 패드의 일부를 덮는 보호막을 갖고, 상기 절연막 내에 형성된 제1 홀과 상기 제1 홀로부터 연장되며 상기 웨이퍼 내에 형성된 제2 홀을 포함하는 상기 웨이퍼를 상하 관통하는 관통전극 홀을 갖는 기판과;상기 관통전극 홀의 내벽에 형성되고, 상기 제1 홀의 내벽에는 다중 절연막 구조를 가지며 상기 제2 홀 내벽에는 단일 절연막 구조를 가지는 홀 절연막과;상기 관통전극 홀에 형성된 관통전극;을 포함하는 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 제1 홀은 그 하단부가 상기 활성면에 미치지 아니하는 것을 특징으로 하는 반도체 소자.
- 제14항에 있어서,상기 제1 홀은 제1 측벽과 하부벽을 포함하고, 상기 제2 홀은 상기 하부벽으로부터 연장된 제2 측벽을 포함하는 것을 특징으로 하는 반도체 소자.
- 제15항에 있어서,상기 홀 절연막은 제1 홀 절연막과 제2 홀 절연막을 포함하고,상기 제1 홀 절연막은 상기 제1 측벽과 하부벽에 형성되고, 상기 제2 홀 절연막은 상기 제1 측벽과 하부벽 및 제2 측벽에 형성된 것을 특징으로 하는 반도체 소자.
- 제14항에 있어서,상기 제1 홀은 제1 측벽을 포함하고, 상기 제2 홀은 상기 제1 측벽으로부터 연장된 제2 측벽을 포함하는 것을 특징으로 하는 반도체 소자.
- 제17항에 있어서,상기 홀 절연막은 제1 홀 절연막과 제2 홀 절연막을 포함하고,상기 제1 홀 절연막은 상기 제1 측벽에 형성되고, 상기 제2 홀 절연막은 상기 제1 측벽 및 제2 측벽에 형성된 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 제1 홀은 제1 폭을 가지며, 상기 제2 홀은 상기 제1 폭과 동일하거나 작은 제2 폭을 가지는 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 관통전극은 상기 활성면으로부터 돌출되고 상기 패드를 관통하는 상단부와, 상기 비활성면을 통해 노출된 하단부를 포함하는 것을 특징으로 하는 반도체 소자.
- 제20항에 있어서,상기 관통전극의 하단부는 상기 비활성면으로부터 돌출된 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 비활성면에 부착되어 상기 관통전극의 하단부와 전기적으로 연결되는 접속단자를 더 포함하는 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 홀 절연막과 관통전극 사이에 기저층을 더 포함하는 것을 특징으로 하는 반도체 소자.
- 제13항에 있어서,상기 홀 절연막은 상기 보호막에 의해 덮히지 아니한 패드의 일부를 덮는 것을 특징으로 하는 반도체 소자.
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