JP4813035B2 - 貫通電極付基板の製造方法 - Google Patents
貫通電極付基板の製造方法Info
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- JP4813035B2 JP4813035B2 JP2004290142A JP2004290142A JP4813035B2 JP 4813035 B2 JP4813035 B2 JP 4813035B2 JP 2004290142 A JP2004290142 A JP 2004290142A JP 2004290142 A JP2004290142 A JP 2004290142A JP 4813035 B2 JP4813035 B2 JP 4813035B2
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Description
前記突出部をプレスによって潰して前記貫通電極の上側接続部を形成すると共に、前記貫通電極を前記貫通孔に固定する工程と、前記第1の半導体基板を前記金属ポストから剥離することにより、前記第2の半導体基板を貫通する前記金属ポストからなる前記貫通電極を得る工程とを有することを特徴とする。
図1〜図3は本発明の第1実施形態の貫通電極付基板の製造方法を順に示す断面図である。第1実施形態の貫通電極付基板の製造方法は、図1(a)に示すように、まず、仮基板10を用意し、その仮基板10上に剥離層12を形成する。仮基板10としては、半導体基板(シリコンウェハやシリコンチップなど)が好適に使用され、また剥離層12としては、常温で仮基板10及び剥離層12上に形成されるシード金属層と貼着し、熱をかけるとシード金属層との界面から剥離できる特性を有する熱剥離テープが好適に使用される。
図6は本発明の第2実施形態の貫通電極付基板の製造方法を示す断面図である。第2実施形態では、本発明の貫通電極付基板をMEMS(Micro-electro-mechanical-systems)デバイス用の実装基板(シリコンキャップ)に適用する形態を例示する。
図9は本発明のその他の実施形態の貫通電極付基板の製造方法における金属ポストの形成方法を示す断面図である。
Claims (6)
- 仮基板としての第1の半導体基板の上方に、該第1の半導体基板から剥離できる状態で金属ポストを形成する工程と、
前記金属ポストに対応する位置に貫通孔が設けられた正規の基板としての第2の半導体基板を、前記第1の半導体基板の上に配置することにより、前記第2の半導体基板の貫通孔に前記第1の半導体基板上の前記金属ポストを挿入する工程であって、前記第2の半導体基板の両面及び前記貫通孔の内面に絶縁層が形成されており、かつ前記金属ポストは前記第2の半導体基板の上面から突出する突出部が設けられた状態で挿入され、
前記突出部をプレスによって潰して前記貫通電極の上側接続部を形成すると共に、前記貫通電極を前記貫通孔に固定する工程と、
前記第1の半導体基板を前記金属ポストから剥離することにより、前記第2の半導体基板を貫通する前記金属ポストからなる前記貫通電極を得る工程とを有することを特徴とする貫通電極付基板の製造方法。 - 前記第1の半導体基板上には剥離層及びシード金属層が順に形成されており、
前記金属ポストを形成する工程は、
前記シード金属層をめっき給電層に利用した電解めっきにより所要部に前記金属ポストを形成する工程であり、
前記貫通電極を得る工程は、
前記前記第1の半導体基板を前記金属ポストから剥離する際に、前記剥離層と前記シード金属層との界面から剥離する工程と、
前記シード金属層を除去するか、又は、前記シード金属層を前記貫通電極に接続されるようにパターニングする工程とを含むことを特徴とする請求項1に記載の貫通電極付基板の製造方法。 - 前記第2の半導体基板は、中央主要部に凹部が設けられることで周縁部に凸部が設けられた構造を有し、かつ前記貫通孔は前記凹部が形成された領域に設けられており、
前記第2の半導体基板の貫通孔に前記金属ポストを挿入する工程において、前記第2の半導体基板の前記凸部が設けられた面を上側にして、前記第2の半導体基板を前記第1の半導体基板上に配置することを特徴とする請求項1又は2に記載の貫通電極付基板の製造方法。 - 前記第2の半導体基板には、半導体素子が形成されていることを特徴とする請求項1又は2に記載の貫通電極付基板の製造方法。
- 前記第1の半導体基板上には剥離層とシード金属層とが形成されており、
前記金属ポストを形成する工程は、
ワイヤボンディング法によって前記シード金属層上にボールバンプを形成する工程であり、
前記貫通電極を得る工程は、
前記第1の半導体基板を前記金属ポストから剥離する際に、前記剥離層と前記シード金属層との界面から剥離する工程と、
前記シード金属層を除去するか、又は前記シード金属層を前記貫通電極に接続されるようにパターニングする工程を含むことを特徴とする請求項1に記載の貫通電極付基板の製造方法。 - 前記第1の半導体基板及び前記第2の半導体基板はシリコンからなり、前記シード金属層及び金属ポストは銅よりなることを特徴とする請求項2又は5に記載の貫通電極付基板の製造方法。
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TW094132428A TW200618706A (en) | 2004-10-01 | 2005-09-20 | Method of manufacturing a substrate with through electrodes |
KR1020050087527A KR20060051448A (ko) | 2004-10-01 | 2005-09-21 | 관통 전극을 구비한 기판의 제조 방법 |
EP05255962A EP1643819A3 (en) | 2004-10-01 | 2005-09-26 | Method of manufacturing a substrate with through electrodes |
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