JP4508189B2 - 半導体モジュールの製造方法 - Google Patents
半導体モジュールの製造方法 Download PDFInfo
- Publication number
- JP4508189B2 JP4508189B2 JP2006510560A JP2006510560A JP4508189B2 JP 4508189 B2 JP4508189 B2 JP 4508189B2 JP 2006510560 A JP2006510560 A JP 2006510560A JP 2006510560 A JP2006510560 A JP 2006510560A JP 4508189 B2 JP4508189 B2 JP 4508189B2
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- JP
- Japan
- Prior art keywords
- melting point
- low melting
- semiconductor module
- point metal
- manufacturing
- Prior art date
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
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Description
また、本発明においては、接続されるべき1対の導電部の材料が異種材料であって、それぞれの導電部への前記低融点金属の拡散速度が異なっており、前記金属箔の材料が前記低融点金属の拡散速度の速い方の導電部の材料と同じ材料であることが好ましい。
また、本発明においては、前記第3回路電極は、前記回路基板のほぼ全面にわたって形成されており、この第3回路電極の、前記回路基板とは反対側の全面が、前記放熱部材に接合されることが好ましい。
また、本発明においては、前記第3回路電極及び前記放熱部材は、Cuからなることが好ましい。
また、本発明においては、前記低融点金属層が、SnIn、In、Bi、SnBiより選択される一種を少なくとも含有することが好ましい。これによれば、上記の金属は、いずれも融点が180℃以下の低融点であって、導電部中へ固液拡散しやすいので、本発明に特に好適に使用可能である。
更に、本発明においては、前記低融点金属層が、SnIn又はSnBiを含有することが好ましい。特に、前記低融点金属層が、SnInの共晶合金を含有することが好ましい。
更に、本発明においては、前記半導体モジュールが、パワー半導体モジュールであることが好ましい。特に、前記半導体モジュールが、前記半導体素子として絶縁ゲート型バイポーラトランジスタが用いられてなるパワー半導体モジュールであることが好ましい。
ここで、ai、χiはそれぞれi成分の活量及びモル分率である。i成分の合金状態における蒸気圧をpiとし、i成分の純粋状態における蒸気圧をpi(0)とすれば、定義により、ai=pi/pi(0)である。
合金のi成分に対する部分モル自由エネルギー変化ΔGiは、以下の(3)式で与えられるので、(2)式を用いて、(4)式のように変形できる。
ΔGi=RTlnγi+RTlnχi (4)
ここで、Rは気体定数、Tは絶対温度である。また、組成Xにおける自由エネルギーΔGiは、以下の(5)式で表すことができる。
ここで、例えば、SnInの共晶合金の場合、上記のように、Inの組成はX=52、Snの組成はX=48である。
ΔGi=−1604.62J/mol (6)
が得られる。同様に、SnとCuとの反応性を考慮して、(5)式の各係数にAij=−35479、Bij=−19182、Cij=59493、X=0.48を代入すると、
ΔGi=−5340.65J/mol (7)
が得られる。(3)式と(6)式より、In-Cu反応における活量aAを求め、(3)式と(7)式より、Sn-Cu反応における活量aBを求めると、以下の(8)(9)式となる。ただし、R=8.314[J・mol−1・K−1]、T=700K(427℃)である。
aB=exp(ΔGi/RT)=0.632 (9)
次に、真空蒸着における各成分の線束を考えると、2元合金が蒸発しているとき、ある瞬間における表面組成をχA、χBとすれば、蒸発線束比JA/JBは、以下の(10)、(11)式で表される。
=(γAχApA/γBχBpB)(MB/MA)1/2=Z(χA/χB) (10)
Z=(γApA/γBpB)(MB/MA)1/2 (11)
この(10)、(11)式のZの値が1となるときが、蒸発成分比が元の合金の組成(Inの組成:χA=52、Snの組成:χB=48)に等しくなる条件である。よって、(10)式において、Inの分子量MA=114.818、Snの分子量MB=118.710、aA=0.835、aB=0.632、Z=1を代入して、
(pA/pB)=Z(χA/χB)(aB/aA)(MA/MB)1/2=0.81 (12)
が得られる。したがって、この(12)式を満たす蒸気圧となるような条件下で蒸着することで、In:Sn=52:48となるような、Cu上へのSnIn共晶合金の成膜が可能となる。
χB=1/(1+(WA/WB)(MB/MA)) (14)
したがって、上記の(13)、(14)式を、(10)、(11)式に代入して、蒸発線束重量比ΓA/ΓBは、以下の(15)式で表される。
=(γApA/γBpB)(MB/MA)1/2(WA/WB) (15)
(13)、(14)式において、Inの分子量MA=114.818、Snの分子量MB=118.710、Inの重量%WA=0.52、Snの重量%WB=0.48を代入すると、χA=0.528、χB=0.472を得る。
(γApA/γBpB)=(ΓA/ΓB)(MB/MA)1/2(χB/χA)=0.98 (16)
が得られる。したがって、この(16)式を満たす活量係数及び蒸気圧となるような条件下で蒸着することで、In:Sn=52:48となるような、Cu上へのSnIn共晶合金の成膜が可能となる。
図1に示す工程にしたがって、以下の半導体モジュールを製造した。
参考例1において、低融点金属層を、単一金属層として、Sn層0.48μm、In層0.52μmの合計1μmとなるようにスパッタリングにより順に積層して形成し、第1〜3接合工程のそれぞれにおいて、温度120℃で10秒間の予備加熱を行い、Sn層とIn層とを固溶させてSnInの合金層を得た後、第1〜3接合工程を行った以外は、参考例1と同様の条件で半導体モジュールを製造した。
Claims (22)
- 回路基板上に形成された第1回路電極と、表裏両面に素子電極が形成された半導体素子の前記裏面側素子電極とを接合する第1接合工程と、前記半導体素子の前記表面側素子電極と、線状あるいは板状の接続部材の一端とを接合する第2接合工程と、前記接続部材の他端と、前記回路基板上に形成された第2回路電極とを接合する第3接合工程と、前記回路基板上に形成された第3回路電極と、金属からなる放熱部材とを接合する第4接合工程とを含む半導体モジュールの製造方法であって、
前記第1接合工程、第2接合工程及び第3接合工程の少なくとも1つの工程と、前記第4接合工程とにおいて、接続されるべき1対の導電部の少なくとも一方に、低融点金属層をあらかじめ形成した後、前記1対の導電部を対向させて、少なくとも低融点金属が溶融する温度で加熱加圧し、前記低融点金属層を前記1対の導電部中に固液拡散させることによって、前記1対の導電部を接合することを特徴とする半導体モジュールの製造方法。 - 前記1対の導電部の少なくとも一方に前記低融点金属層を形成し、前記1対の導電部間に金属箔を介装して、前記1対の導電部を加熱加圧する請求項1に記載の半導体モジュールの製造方法。
- 回路基板上に形成された第1回路電極と、表裏両面に素子電極が形成された半導体素子の前記裏面側素子電極とを接合する第1接合工程と、前記半導体素子の前記表面側素子電極と、線状あるいは板状の接続部材の一端とを接合する第2接合工程と、前記接続部材の他端と、前記回路基板上に形成された第2回路電極とを接合する第3接合工程と、前記回路基板上に形成された第3回路電極と、金属からなる放熱部材とを接合する第4接合工程とを含む半導体モジュールの製造方法であって、
前記第1接合工程、第2接合工程及び第3接合工程の少なくとも1つの工程と、前記第4接合工程とにおいて、金属箔の片面あるいは両面に低融点金属層をあらかじめ形成した後、接続されるべき1対の導電部を対向させて、この1対の導電部間に前記金属箔を介装し、前記1対の導電部を少なくとも低融点金属が溶融する温度で加熱加圧し、前記低融点金属層を前記1対の導電部中に固液拡散させることによって、前記1対の導電部を接合することを特徴とする半導体モジュールの製造方法。 - 前記低融点金属層が前記金属箔中に拡散して、前記低融点金属層が残存しないように接合を行う請求項2又は3記載の半導体モジュールの製造方法。
- 接続されるべき1対の導電部の材料が異種材料であって、それぞれの導電部への前記低融点金属の拡散速度が異なっており、前記金属箔の材料が前記低融点金属の拡散速度の速い方の導電部の材料と同じ材料である請求項2〜4のいずれか1つに記載の半導体モジュールの製造方法。
- 前記第3回路電極は、前記回路基板のほぼ全面にわたって形成されており、この第3回路電極の、前記回路基板とは反対側の全面が、前記放熱部材に接合される請求項1〜5のいずれか1つに記載の半導体モジュールの製造方法。
- 前記第3回路電極及び前記放熱部材は、Cuからなる請求項1〜6のいずれか1つに記載の半導体モジュールの製造方法。
- 前記低融点金属層が、SnIn、In、Bi、SnBiより選択される一種を少なくとも含有する請求項1〜7のいずれか1つに記載の半導体モジュールの製造方法。
- 前記低融点金属層が、SnIn又はSnBiを含有する請求項8に記載の半導体モジュールの製造方法。
- 前記低融点金属層が、SnInの共晶合金を含有する請求項9に記載の半導体モジュールの製造方法。
- 前記接合時の加熱温度が、前記低融点金属層の融点より0〜100℃高い温度である請求項7〜10のいずれか1つに記載の半導体モジュールの製造方法。
- 前記1対の導電部間にあらかじめ形成される前記低融点金属層の合計厚さが0.1〜1μmである請求項1〜11のいずれか1つに記載の半導体モジュールの製造方法。
- 前記1対の導電部の材質が、Cu、Ni、Au、Alより選択される一種又はそれらの合金である請求項1〜12のいずれか1つに記載の半導体モジュールの製造方法。
- 前記加熱加圧は、前記低融点金属層が、前記1対の導電部間に中間合金層を形成するまで行う請求項1〜13のいずれか1つに記載の半導体モジュールの製造方法。
- 前記接続部材がリードフレームである請求項1〜13のいずれか1つに記載の半導体モジュールの製造方法。
- 前記1対の導電部表面の表面粗さRaが0.4〜10μmの粗面である請求項1〜15のいずれか1つに記載の半導体モジュールの製造方法。
- 前記低融点金属層は、合金を形成できる少なくとも2種類以上の金属を2層以上に積層し、該積層した金属層を予備加熱して反応させて合金層とすることにより形成する請求項1〜16のいずれか1つに記載の半導体モジュールの製造方法。
- 前記低融点金属層の合金は融点が220℃以下の合金である請求項17に記載の半導体モジュールの製造方法。
- 前記積層した金属層を前記少なくとも2種類以上の金属の各融点のうち最も低い融点以下の温度で予備加熱する請求項17に記載の半導体モジュールの製造方法。
- SnとInとを2層以上に積層し、該積層した金属層を110〜125℃の温度で予備加熱する請求項19に記載の半導体モジュールの製造方法。
- 前記半導体モジュールが、パワー半導体モジュールである請求項1〜20のいずれか1つに記載の半導体モジュールの製造方法。
- 前記半導体モジュールが、前記半導体素子として絶縁ゲート型バイポーラトランジスタが用いられてなるパワー半導体モジュールである請求項21に記載の半導体モジュールの製造方法。
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US9214442B2 (en) * | 2007-03-19 | 2015-12-15 | Infineon Technologies Ag | Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip |
JP2009105266A (ja) * | 2007-10-24 | 2009-05-14 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
US8211752B2 (en) | 2007-11-26 | 2012-07-03 | Infineon Technologies Ag | Device and method including a soldering process |
DE102010013610B4 (de) * | 2010-03-22 | 2013-04-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum stoffschlüssigen Verbinden von elektronischen Bauelementen oder Kontaktelementen und Substraten |
WO2013065101A1 (ja) * | 2011-10-31 | 2013-05-10 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP2016211055A (ja) * | 2015-05-12 | 2016-12-15 | 株式会社豊田中央研究所 | 接合電極、半導体素子及び電子部品 |
JP6819385B2 (ja) * | 2017-03-17 | 2021-01-27 | 三菱マテリアル株式会社 | 半導体装置の製造方法 |
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WO2005086218A1 (ja) | 2005-09-15 |
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