KR100976812B1 - 전자 소자 패키지 및 그 제조 방법 - Google Patents
전자 소자 패키지 및 그 제조 방법 Download PDFInfo
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- KR100976812B1 KR100976812B1 KR1020100011279A KR20100011279A KR100976812B1 KR 100976812 B1 KR100976812 B1 KR 100976812B1 KR 1020100011279 A KR1020100011279 A KR 1020100011279A KR 20100011279 A KR20100011279 A KR 20100011279A KR 100976812 B1 KR100976812 B1 KR 100976812B1
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- Prior art keywords
- layer
- melting point
- sealing
- electronic device
- low melting
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 238000007789 sealing Methods 0.000 claims abstract description 219
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- 229910052751 metal Inorganic materials 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 39
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- 239000010949 copper Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 17
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- 229910000765 intermetallic Inorganic materials 0.000 claims description 6
- 229910016347 CuSn Inorganic materials 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
본 발명의 실시 예들은 기판 어셈블리와, 기판 어셈블리와 대향하여 배치된 전자 소자와, 기판 어셈블리와 전자 소자 사이에 형성되며, 실링층과 접합층이 구비된 실링 링을 포함하며, 실링 링은 전자 소자의 실링 영역을 둘러싸는 폐루프 형상으로 형성되고, 접합층은 실링층보다 융점이 낮은 저융점 물질층이 실링층과 반응하여 형성된 포토 센서 패키지 및 그 제조 방법을 제공한다.
본 발명의 실시 예들에 의하면, 융점이 높은 실링층과 융점이 높아진 접합층은 이후 서브마운트 등의 고온 공정에서 용융되지 않기 때문에 실링 링에 터짐 등의 불량이 발생되지 않게 된다. 이에 따라 실링 링을 폐루프 형상으로 제작할 수 있고, 외부로부터 먼지, 수분 등의 이물질의 유입을 완전히 차단할 수 있다.
Description
도 2는 도 1의 A-A' 라인을 따라 절취한 상태의 단면도.
도 3(a) 내지 도 3(e)는 본 발명의 일 실시 예에 따른 포토 센서 패키지의 제조 방법을 설명하기 위한 공정 흐름도.
도 4(a) 및 도 4(b)는 종래의 SnAg를 이용한 실링 링 및 터짐이 발생된 상태의 단면 사진.
도 5는 본 발명의 일 실시 예에 따른 구리와 SnAg를 이용한 실링 링의 단면 사진.
도 6 및 도 7은 본 발명의 다른 실시 예들에 따른 포토 센서 패키지의 단면도.
300 : 연결부 400 : 실링 링
410 : 실링층 420 : 접합층
430 : 실링 링 패드
Claims (22)
- 기판 어셈블리;
상기 기판 어셈블리와 대향하여 배치된 전자 소자; 및
상기 기판 어셈블리와 전자 소자 사이에 형성되며, 실링층과 접합층이 구비된 실링 링을 포함하며,
상기 실링 링은 상기 전자 소자의 실링 영역을 둘러싸는 폐루프 형상으로 형성되고, 상기 접합층은 상기 실링층보다 융점이 낮은 저융점 물질층이 상기 실링층과 반응하여 형성된 전자 소자 패키지.
- 제 1 항에 있어서, 상기 실링 링에 의해 내부에 빈 공간이 형성되고, 상기 접합층은 금속간 화합물인 전자 소자 패키지.
- 제 1 항에 있어서, 상기 전자 소자는 포토 센서, MEMS 소자, 실리콘 베이스 소자, GaAs 베이스 소자, InP 베이스 소자를 포함하는 전자 소자 패키지.
- 제 1 항에 있어서, 상기 기판 어셈블리는 광 투과성 기판을 포함하는 전자 소자 패키지.
- 제 1 항에 있어서, 상기 실링층은 상기 기판 어셈블리 및 포토 센서 칩의 어느 하나 상에 형성되고, 상기 저융점 물질층은 상기 실링층 상에 형성된 전자 소자 패키지.
- 제 5 항에 있어서, 상기 실링층이 형성되지 않은 상기 기판 어셈블리 및 포토 센서 칩의 어느 하나 상에 형성되며, 상기 실링층에 대응되는 영역에 형성되는 실링 링 패드를 더 포함하는 전자 소자 패키지.
- 제 6 항에 있어서, 상기 저융점 물질층은 상기 실링층 및 실링 링 패드보다 융점이 낮은 물질을 이용하는 전자 소자 패키지.
- 제 7 항에 있어서, 상기 실링층은 구리, Au, Sn, SnAg, SnAgCu, Ag, Ni중 적어도 어느 하나를 이용하는 전자 소자 패키지.
- 제 7 항에 있어서, 상기 저융점 물질층은 Sn, SnAg, Ti/In/Au, Bi, In중 적어도 어느 하나를 이용하는 전자 소자 패키지.
- 제 7 항에 있어서, 상기 실링층 및 저융점 물질층은 각각 구리와 Sn, 구리와 SnAg, Au와 Ti/In/Au의 적층 구조, Sn과 Bi, SnAg와 Bi, SnAgCu와 Bi, Ag와 In, Ni와 Sn의 어느 하나를 이용하는 전자 소자 패키지.
- 제 10 항에 있어서, 상기 접합층은 CuSn, CuSnAg, AuIn, SnBi, Sn,AgBi, SnAgCuBi, AgIn, NiSn의 어느 하나로 형성되는 전자 소자 패키지.
- 제 7 항에 있어서, 상기 저융점 물질층은 상기 실링층 및 실링 링 패드와 반응하여 상기 저융점 물질층이 잔류하지 않고 모두 상기 접합층이 형성되고, 상기 접합층이 형성되어 상기 실링층과 실링 링 패드를 견고하게 접합할 수 있는 두께로 형성되는 전자 소자 패키지.
- 제 12 항에 있어서, 상기 저융점 물질층은 5 내지 10㎛의 두께로 형성되는 전자 소자 패키지.
- 제 1 항에 있어서, 상기 실링 링 외측에 형성된 수지 실링을 더 포함하는 전자 소자 패키지.
- 전자 소자 및 기판 어셈블리의 어느 하나 상에 실링층 및 저융점 물질층을 적층 형성하는 단계;
상기 실링층 및 저융점 물질층이 형성되지 않은 상기 전자 소자 및 기판 어셈블리의 어느 하나 상에 실링 링 패드를 형성하는 단계;
상기 저융점 물질층과 상기 실링 링 패드가 대응되도록 상기 전자 소자 및 기판 어셈블리를 위치시키는 단계; 및
상기 저융점 물질층을 용융시켜 상기 실링층 및 실링 링 패드와 반응시켜 접합층을 형성하는 단계를 포함하는 전자 소자 패키지 제조 방법.
- 제 15 항에 있어서, 상기 실링층 및 저융점 물질층은 폐루프 형상으로 형성하는 전자 소자 패키지 제조 방법.
- 제 16 항에 있어서, 상기 실링층 및 저융점 물질층은 상기 전자 소자 상에 형성되며, 상기 실링층 및 저융점 물질층과 이격되어 조인트를 형성하는 전자 소자 패키지 제조 방법.
- 제 17 항에 있어서, 상기 조인트는 상기 실링층 및 저융점 물질층과 동일 물질로 동시에 형성되는 전자 소자 패키지 제조 방법.
- 제 17 항에 있어서, 상기 실링층과 대응되는 영역의 상기 기판 어셈블리 상에 실링 링 패드를 형성하는 단계를 더 포함하는 전자 소자 패키지 제조 방법.
- 제 19 항에 있어서, 상기 실링 링 패드와 이격되어 금속 배선을 형성하고, 상기 금속 배선 및 실링 링 패드의 적어도 일부 상에 절연층을 형성하는 단계를 더 포함하는 전자 소자 패키지 제조 방법.
- 제 20 항에 있어서, 상기 실링 링 패드와 상기 금속 배선은 동일 물질을 이용하여 동시에 형성하는 전자 소자 패키지 제조 방법.
- 제 15 항에 있어서, 상기 접합층은 상기 저융점 물질층과 다른 금속간 화합물을 형성하도록 열처리하여 형성하는 전자 소자 패키지 제조 방법.
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CN2010102231252A CN102148262A (zh) | 2010-02-08 | 2010-07-02 | 电子装置封装及其制造方法 |
US12/885,233 US8487437B2 (en) | 2010-02-08 | 2010-09-17 | Electronic device package and method for fabricating the same |
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EP2800129A4 (en) * | 2011-12-27 | 2015-07-08 | Panasonic Ip Man Co Ltd | CONNECTION STRUCTURE |
KR101963809B1 (ko) * | 2012-04-25 | 2019-03-29 | 삼성전자주식회사 | 이미지 센서 패키지 |
US9607863B1 (en) * | 2013-08-09 | 2017-03-28 | Altera Corporation | Integrated circuit package with vacant cavity |
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