WO2019076189A1 - 图像传感器的封装方法、图像传感器封装结构和镜头模组 - Google Patents

图像传感器的封装方法、图像传感器封装结构和镜头模组 Download PDF

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WO2019076189A1
WO2019076189A1 PCT/CN2018/108630 CN2018108630W WO2019076189A1 WO 2019076189 A1 WO2019076189 A1 WO 2019076189A1 CN 2018108630 W CN2018108630 W CN 2018108630W WO 2019076189 A1 WO2019076189 A1 WO 2019076189A1
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Prior art keywords
image sensor
layer
photosensitive
photosensitive surface
contact hole
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PCT/CN2018/108630
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English (en)
French (fr)
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畅丽萍
于德泽
张万宁
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新加坡有限公司
畅丽萍
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Priority to US16/757,623 priority Critical patent/US11282879B2/en
Publication of WO2019076189A1 publication Critical patent/WO2019076189A1/zh

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Definitions

  • the present invention relates to the field of image sensors, and in particular, to an image sensor packaging method, an image sensor package structure, and a lens module.
  • An image sensor is a semiconductor device device that can sense external light and convert it into an electrical signal.
  • hundreds of image sensor chips can be fabricated on the same wafer by using an integrated circuit process. After the image sensor chip is fabricated, it is packaged to form an image sensor package structure, and then the pads of the image sensor package structure are taken out. The lens mount and lens are then mounted to form a lens module.
  • the lens module can be used in electronic devices such as cameras, smart phones, digital cameras, car image systems and toys.
  • An image sensor package method commonly used in the prior art is a COB (Chip On Board) package, in which an image sensor chip is attached to an interconnect substrate (usually a PCB board) with a conductive or non-conductive adhesive. Then, wire bonding is performed to realize electrical connection, and then a protective glass (for example, infrared glass, that is, glass having a filtering function for infrared rays) may be covered on the photosensitive surface of the image sensor chip by a sealing adhesive such as epoxy resin. To protect the photosensitive surface of the image sensor chip.
  • COB Chip On Board
  • FIG. 1 is a schematic cross-sectional view of an image sensor package structure obtained by a COB packaging process of the prior art, as shown in FIG. 1, in a region perpendicular to the photosensitive surface 11 of the image sensor chip 10 (ie, an area that receives external light and performs photoelectric conversion)
  • the back surface metal electrode 16 In the direction of the image sensor package structure, the back surface metal electrode 16, the interconnection substrate 15, the image sensor chip 10 (including the substrate 12, the photosensitive surface 11, the pad 13), the cover glass 14 covering the photosensitive surface 11, and the connection pads 13 and
  • the metal lead 17 of the interconnection substrate 15 is on the one hand, since the image sensor chip 10 is superposed on the interconnection substrate 15, the thickness of the formed sensor package structure (longitudinal direction in FIG.
  • the lead wires 17 are formed on the pads 13 and the interconnection substrate 15 by wire bonding, and the interval d (direction parallel to the photosensitive surface 11) of the pad 13 and the photosensitive surface 11 on the image sensor chip 10 is generally larger than that due to process limitation. 500 micron, thus limiting the further reduction of the image sensor package structure area, and both reasons cause the structure shown in Fig. 1 to be used in the subsequent construction of the lens module. Size limitations.
  • the technical problem solved by the present invention is that the thickness of the image sensor package structure obtained by the COB packaging process is large, which is disadvantageous to the thinning problem of the image sensor package structure.
  • the present invention provides a method for packaging an image sensor, including:
  • a plurality of image sensor chips are attached to a surface of a carrier, the image sensor chip includes a photosensitive surface and a back surface opposite to the photosensitive surface, and a plurality of the image sensor chips after being attached have a photosensitive surface thereof In the same direction
  • the distance between the first surface and the second surface of the molding layer is greater than or equal to the distance between the photosensitive surface and the back surface of the image sensor chip.
  • the forming layer comprises a thermosetting resin.
  • the image sensor chip further includes a pad formed on a non-photosensitive area on one side of the photosensitive surface, and the pad is used for connecting the image sensor chip to an external circuit.
  • the packaging method further includes: forming a plurality of metal through holes penetrating the molding layer, the metal through holes are filled with a conductive material; forming a front structure on a side of the photosensitive surface, the front structure including a first passivation layer, a thin film metal layer, and a second passivation layer sequentially formed in regions other than the photosensitive surface; a back surface structure formed on a back side of the image sensor chip, the back surface structure including the cover a second passivation layer on the second surface and the back surface; and a back metal layer formed on a surface of the third passivation layer; wherein the thin film metal layer and the back metal layer are both in contact with the metal via The thin film metal layer is also in contact with the pad.
  • the packaging method further includes: providing a first contact hole and a second contact hole in the first passivation layer, wherein the thin film metal layer passes through the first contact hole and the second contact hole respectively to the metal
  • the via hole is in contact with the pad, and a third contact hole is formed in the third passivation layer, and the back metal layer is in contact with the metal via hole through the third contact hole.
  • the present invention also provides an image sensor package structure, including:
  • the image sensor chip including a photosensitive surface and a back surface opposite to the photosensitive surface, wherein the photosensitive surfaces of the plurality of image sensor chips are in the same direction;
  • a molding layer surrounding the image sensor chip, the molding layer filling a gap between the plurality of image sensor chips, and including a first surface in the same direction as the photosensitive surface and a second surface in the same direction as the back surface surface;
  • the distance between the first surface and the second surface of the molding layer is greater than or equal to the distance between the photosensitive surface and the back surface of the image sensor chip.
  • the package structure further includes:
  • a pad disposed on a non-photosensitive area on one side of the photosensitive surface, the pad being used to connect the image sensor chip to an external circuit;
  • a metal via hole disposed in the molding layer, the metal via hole being filled with a conductive material
  • the front surface structure disposed on a side of the photosensitive surface, the front surface structure includes a first passivation layer, a thin film metal layer, and a second passivation layer which are sequentially stacked in a region other than the photosensitive surface;
  • a back surface structure disposed on a back side of the image sensor chip, the back surface structure including a third passivation layer covering a second surface of the molding layer and a back surface of the image sensor chip, and the third blunt layer a back metal layer provided on the surface of the layer;
  • the thin film metal layer and the back metal layer are both in contact with the metal via, and the thin film metal layer is also in contact with the pad.
  • a first contact hole and a second contact hole are disposed in the first passivation layer, and the thin film metal layer is connected to the metal through the first contact hole and the second contact hole respectively
  • the hole is in contact with the pad
  • a third contact hole is formed in the third passivation layer, and the back metal layer is in contact with the metal via hole through the third contact hole.
  • the image sensor package structure further includes a cover glass covering the second passivation layer and the photosensitive surface.
  • the spacing of the pads from the photosensitive surface is less than 50 microns in a direction parallel to the photosensitive surface.
  • the forming layer comprises a thermosetting resin.
  • the present invention also provides a lens module including the image sensor package structure described above.
  • a plurality of image sensor chips are attached to a surface of a carrier, and a molding layer is formed between the plurality of image sensor chips, and then the carrier is removed, and the thickness of the molding layer is Greater than or equal to the thickness of the image sensor chip (both refers to the dimension perpendicular to the direction of the photosensitive surface), that is, the image sensor chip is embedded in the molding layer, and the interconnection substrate is not required compared with the prior art COB packaging process.
  • the thickness of the formed image sensor package structure is reduced, and the image sensor chip is thinned.
  • the image sensor of the present invention has a low package structure and is more easily miniaturized when used to form the lens module. .
  • a non-photosensitive area on the photosensitive surface side of the image sensor chip is formed with a pad.
  • a metal lead is not required to be formed by a wire bonding process, and a thin film formed by a semiconductor thin film process is used.
  • the metal layer is used for the pad extraction on the image sensor chip, so the interval between the pad and the photosensitive surface in the direction parallel to the photosensitive surface can be reduced to less than 50 microns, that is, the size of the image sensor chip can be further reduced, which is beneficial to improve Integration.
  • FIG. 1 is a schematic cross-sectional view of an image sensor package structure formed using a prior art COB packaging process.
  • FIG. 2 is a schematic flow chart of a method of packaging an image sensor according to an embodiment of the present invention.
  • 3a to 3e are schematic cross-sectional views showing respective steps of a packaging method of an image sensor according to an embodiment of the present invention.
  • the packaging method of the image sensor referred to in the present invention mainly refers to a method of packaging an image sensor chip to form an image sensor package structure.
  • FIG. 2 is a schematic flow chart of a method of packaging an image sensor according to an embodiment of the present invention. Including the following steps:
  • S1 attaching a plurality of image sensor chips to a surface of a carrier, the image sensor chip includes a photosensitive surface and a back surface opposite to the photosensitive surface, and the image sensor chip further includes a side of the photosensitive surface a pad formed by the non-photosensitive area, and the photosensitive faces of the plurality of image sensor chips after attachment are in the same direction;
  • S2 forming a molding layer covering a surface of the carrier between the plurality of image sensor chips, and including a first surface in the same direction as the photosensitive surface and a second surface in the same direction as the back surface, Wherein the distance between the first surface and the second surface of the molding layer is greater than or equal to the distance between the photosensitive surface and the back surface of the image sensor chip;
  • S4 forming a front surface structure on a side of the photosensitive surface, the front surface structure including a first passivation layer, a thin film metal layer, and a second passivation layer sequentially formed in regions other than the photosensitive surface;
  • S5 forming a back surface structure on a back side of the image sensor chip, the back surface structure including a third passivation layer covering the second surface and the back surface, and a surface formed on the surface of the third passivation layer a back metal layer, wherein the thin film metal layer and the back metal layer are both in contact with the metal via, and the thin film metal layer is further in contact with the pad.
  • FIG. 3a to 3e are schematic cross-sectional views showing respective steps of a packaging method of an image sensor according to an embodiment of the present invention.
  • the packaging method of the image sensor of this embodiment will be further described in detail below with reference to FIG. 2 and FIG. 3a to FIG. 3e.
  • step S1 is performed to apply a plurality of image sensor chips 100 to the surface of a carrier 200.
  • the image sensor chip 100 includes a photosensitive surface 100a and a back surface 100b opposite to the photosensitive surface, and the image sensor chip 100 further includes a pad 101 formed on the non-photosensitive region 100c on the side of the photosensitive surface 100a, and a plurality of the image sensor chips 100 after attachment are in the same direction.
  • image sensor chips 100 are shown in FIG. 3a, in the present embodiment, a plurality of identical image sensor chips 100 are attached to the surface of the carrier 200.
  • other functional chips or devices such as an image processing chip, a central processing chip, a passive component, and the like, may be attached to the carrier 200. Surfaces, and are spaced apart from each other. Those skilled in the art can modify the number and distribution of the image sensor chip 100 without departing from the scope of the inventive concept.
  • the carrier 200 is an auxiliary (or temporary) carrier, and the material thereof is, for example, glass, ceramic or polymer material, and the surface of the image sensor chip 100 attached thereto may be a plane, and the shape may be square or Round plate shape.
  • the carrier 200 may further include a wall disposed at an edge thereof, the height of the wall may be greater than or equal to the thickness of the image sensor chip 100 (the distance between the photosensitive surface 100a and the back surface 100b),
  • the wall can be set to a detachable structure.
  • the image sensor chip 100 may be attached to the surface of the carrier 200 by an adhesive (not shown).
  • the image sensor chip 100 is, for example, a CMOS or CCD image sensor chip.
  • a CMOS image sensor chip is taken as an example, and has a photosensitive surface 100a, that is, a photosensitive area of the image sensor chip 100, and a back surface 100b, that is, a photosensitive surface. 100a away from the surface.
  • a microlens structure is disposed to facilitate the incidence efficiency of light (mainly visible light), and may include red (R), green (G), and blue (B) sensitivities respectively in the image sensor chip 100.
  • the unit, incident light incident on each photosensitive unit is photoelectrically converted, converted into an electrical signal and transmitted to an external circuit through an internal circuit (not shown).
  • the photosensitive surface 100a has a photosensitive function (a surface on which R, G, and B are photoelectrically converted after being incident through the microlens structure), and on the same side of the photosensitive surface 100a, a non-photosensitive region 100c is further included in the non-photosensitive region.
  • 100c provided with two pads 101 for connection with an external circuit, that is, a lead-out area of the internal circuit of the image sensor chip 100, and the pad 101 is spaced apart from the photosensitive surface 100a by a distance d in a direction parallel to the photosensitive surface 100a.
  • the number of pads 101 may be one, or the pads 101 may be disposed on the side of the back surface 100b of the image sensor chip.
  • the photosensitive surface 100a is bonded to the carrier 200 by an adhesive, and the back surface 100b is away from the carrier 200.
  • the present invention is not limited thereto. In other embodiments, depending on the specific structure of the image sensor chip 100, the back surface 100b may be attached to the carrier 200 by an adhesive.
  • the plurality of image sensor chips 100 are not continuously attached to the surface of the carrier 100, but any two image sensor chips 100 are distributed at a certain distance.
  • a chip may be formed on the surface of the carrier 100 after the attachment is completed.
  • the distance between the array and the image sensor chip 100 can be set according to the requirements of the patch device and the process, which is not limited in the present invention.
  • step S2 is performed to form a molding layer 150 covering the surface of the carrier 200 between the plurality of image sensor chips 100, the molding layer 150 including the photosensitive surface 100a. a first surface 150a of the same direction and a second surface 150b of the same direction as the back surface 100b, wherein a distance between the first surface 150a and the second surface 150b of the molding layer 150 is greater than or equal to the image sensor chip The distance between the photosensitive surface 100a of 100 and the back surface 100b.
  • the forming layer 150 may include a material that absorbs at least a portion of the light, a light reflecting material, or a light scattering material, and may also include an insulating material that is translucent or opaque to visible light (eg, light having a wavelength in the range of 380 to 750 nm), and may also include An insulating material having a transmittance close to zero for infrared rays (for example, light having a wavelength in the range of 750 nm to 1 mm).
  • the forming layer 150 may include, for example, polycarbonate (PC), polyethylene terephthalate (PET), polyether sulfone, polyphenylene ether, polyamide, polyetherimide, methacrylic resin, or a thermoplastic resin of a cyclic polyolefin resin, and a thermosetting resin such as an epoxy resin, a phenol resin, a polyurethane resin, an acrylic resin, a vinyl ester resin, an imide resin, a polyurethane resin, a urea resin or a melamine resin, or such as a poly An organic insulating material such as styrene (PS) or polyacrylonitrile, but the invention is not limited thereto.
  • PC polycarbonate
  • PET polyethylene terephthalate
  • PET polyether sulfone
  • polyphenylene ether polyamide
  • polyetherimide polyetherimide
  • methacrylic resin or a thermoplastic resin of a cyclic polyolefin resin
  • the shaped layer 150 may comprise an inorganic insulating material such as an inorganic oxide or an inorganic nitride of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, cerium oxide or zinc oxide.
  • an inorganic insulating material such as an inorganic oxide or an inorganic nitride of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, cerium oxide or zinc oxide.
  • the invention is not limited thereto.
  • the forming layer 150 can comprise an opaque material such as a black matrix material.
  • the black matrix material may include an organic resin, a resin or paste containing a glass paste and a black pigment.
  • the molding layer 150 preferably includes a thermosetting resin, such as an epoxy resin, and the addition of a thermosetting resin can improve the flatness of the molding layer 150 in a heated state, thereby improving the flatness of the plurality of image sensor chips 100, for example, When the test temperature reaches 260 degrees, the flatness of the plurality of image sensor chips 100 changes less than 20 microns. With the existing COB packaging technology, the flatness of the plurality of image sensor chips 100 varies from 70 to 90 microns at the same test temperature.
  • a thermosetting resin such as an epoxy resin
  • the surface of the carrier 200 may be coated with an epoxy resin by a spin coating process. Since the image sensor chip 100 is attached to the surface of the carrier 200, the molding layer 150 is first distributed on the surface of the carrier 200 between the plurality of image sensor chips 100, and the molding layer can be formed by setting the amount of epoxy resin. 150 fills the gap between the plurality of image sensor chips 100, and then the epoxy resin can be substantially flush with the image sensor chip 100 by, for example, a squeegee method, but the molded layer 150 can also be formed within the allowable thickness range. It is higher than the back surface 100d of the image sensor chip 100.
  • the present invention is not limited thereto, and the distance between the first surface 150a and the second surface 150b of the molding layer 150 may be greater than or equal to the distance between the photosensitive surface 100a and the back surface 100b of the image sensor chip 100.
  • the epoxy resin can then be cured by baking.
  • the molding layer 150 of the photosensitive surface 100a may be dry etched to expose the back surface 100b of the image sensor chip 100, and the resulting molding layer 150 surrounds the image sensor chip 100.
  • the forming layer 150 can also be formed between the plurality of image sensor chips 100 using an Ink Jet Printing (IJP) process.
  • IJP Ink Jet Printing
  • step S3 is performed to remove the carrier 200 to form a plurality of metal vias 160 extending through the molding layer 150, the metal vias 160 being filled with a conductive material.
  • the viscosity of the hot melt adhesive can be changed by heating the carrier 200 to load the carrier. 200 removed. It should be noted that the heating temperature of the hot melt adhesive should be lower than the curing temperature of the molding layer 150 to avoid affecting the molding layer 150.
  • the viscosity of the adhesive is variable, and the position of the adhesive can be positioned by laser, infrared or ultrasonic waves, and the carrier 200 is heated, so that the adhesive viscosity is deteriorated, thereby removing the load. Board 200.
  • the carrier 200 and the photosensitive surface 100a of the image sensor chip 100 may be applied with a force that moves in opposite directions to remove the carrier 200.
  • the present invention is not limited thereto, and for example, a laser may also be used.
  • the carrier 200 is removed by stripping or mechanical cutting.
  • a plurality of through holes penetrating the molding layer 150 may be formed in the molding layer 150 by mechanical drilling, laser drilling, or dry etching, and may be appropriately selected according to the material properties of the molding layer 150.
  • the punching method forms a through hole.
  • a through hole can be formed by a laser drilling process.
  • the vias may be distributed around the image sensor chip 100, ie, one or more vias may be formed in the molding layer 150 around one image sensor chip 100.
  • a conductive material may be filled in the via hole to form a metal via 160.
  • the metal via 160 can guide the electrical connection formed on a certain surface of the molding layer 150 to the other surface of the molding layer 150, thereby compensating for the limitation of the conventional semiconductor chip two-dimensional wiring, which uses different process materials and The integration of different functional modules can improve the integration of the chip package and bring great convenience to the overall performance optimization of the chip.
  • the through holes are filled with Cu (copper) to form the metal via holes 160 by, for example, electroplating or electroless plating.
  • the present invention is not limited thereto, and the conductive material may also be a conductive metal such as W (tungsten), Ag (silver) or Au (gold), a conductive alloy or a conductive paste, and the formation process of the metal via 160 may also utilize the field.
  • a conductive metal such as W (tungsten), Ag (silver) or Au (gold), a conductive alloy or a conductive paste, and the formation process of the metal via 160 may also utilize the field.
  • W tungsten
  • Ag silver
  • Au gold
  • step S4 is performed to form a front surface structure 300 on the side of the photosensitive surface 100a.
  • the front surface structure 300 includes a first passivation layer 110 and a film which are sequentially formed in regions other than the photosensitive surface 100a.
  • the front structure 300 is used to lead the pads 101 of the image sensor chip 100 and form an electrical interconnection for connection with an external circuit to control some or all of the image sensor chip 100.
  • the photosensitive surface 100a of the image sensor chip 100 is turned upside down as compared with FIG. 3c
  • the first surface 150a of the layer 150 and the non-photosensitive region 100c form a first passivation layer 110 having a thickness of, for example, about 5 to 25 microns; and then, may be first directly above the metal via 160
  • a first contact hole 111 is formed in the passivation layer 110, and a second contact hole 112 is formed in the first passivation layer 110 directly above the pad 101 of the image sensor chip 100; then the first contact hole 111 is filled with a conductive material And a second contact hole 112, and forming a patterned metal film on the surface of the first passivation layer 110 to form a thin film metal layer 120 connecting the image sensor chip 100 and the metal via 160, and the formed thin film metal layer 120 passes through the first
  • the contact hole 111 is in contact with the metal via 160
  • the first passivation layer 110 and the second passivation layer 130 may isolate the thin film metal layer 120 from short circuit, so the two are preferably insulating materials, and the first passivation layer 110 and the second passivation layer 130 may be the same material or
  • the first passivation layer 110 and the second passivation layer 130 are polymer materials, such as polyimide (polyimides), benzocyclobutene (BCB) or poly-p-dioxin. One of benzene (PBO) or a combination thereof.
  • the first passivation layer 110 and the second passivation layer 130 may be formed by spin coating film formation, heat curing, exposure, development, gas ashing, demolding, and the like. However, the present invention is not limited thereto, and film formation and patterning of the first passivation layer 110 and the second passivation layer 130 may be performed by selecting an appropriate process depending on the properties of the selected material.
  • the first contact hole 111 and the second contact hole 112 may be formed using, for example, a dry etching process in a semiconductor process.
  • metal seeds may be formed inside and outside the first contact hole 111 and the second contact hole 112 by PVD (Plasma Vapor Deposition) or thermal evaporation process.
  • PVD Physical Vapor Deposition
  • a layer is plated with metal on the metal seed layer to obtain the desired thickness.
  • a process of photoresist coating, exposure, development, etching, and photoresist removal is performed to pattern the metal layer to form the thin film metal layer 120.
  • the thin film metal layer 120 in the present embodiment includes a conductive material filled in the first contact hole 111 and the second contact hole, and a patterned metal layer material formed on the surface of the first passivation layer 110.
  • the thin film metal layer 120 may specifically be a metal material such as Cu, Ag, W or Au, a conductive alloy, or a conductive oxide (for example, ITO), but is not limited thereto, and the thin film metal layer 120 may also be an electrically conductive organic material, such as a conductive polymer. In some embodiments, the thin film metal layer 120 can be formed, for example, by printing.
  • the thickness of the thin film metal layer 120 on the surface of the first passivation layer 110 is about 3 to 10 micrometers, preferably 3 to 5 micrometers.
  • the thin film metal layer 120 is formed by the above semiconductor thin film process, which can be used for the connection of the image sensor chip 10 and an external circuit, and has less influence on the photosensitive surface 100a than the wiring in the PCB packaging process. Therefore, the present embodiment is utilized.
  • the interval d' between the pad 101 and the photosensitive surface 100a in the direction parallel to the photosensitive surface 100a is reduced.
  • the d' value can be reduced to 50 ⁇ m or less.
  • the spacing d between the pads and the photosensitive surface is usually greater than 500 microns. The d' value becomes smaller, which is advantageous for the integration of the image sensor chip 100, and also facilitates miniaturization of the package structure formed by integrating the plurality of image sensor chips 100.
  • step S5 is performed to form a back structure 400 on the side of the back surface 100d of the image sensor chip 100, the back structure 400 including a third blunt covering the second surface 150b and the back surface 100d.
  • a back metal layer 180 formed on a surface of the third passivation layer 170, wherein the thin film metal layer 130 and the back metal layer 180 are in contact with the metal via 160.
  • the third passivation layer 170 in this embodiment may be selected from the same material as the first passivation layer 110 or the second passivation layer 130 and a semiconductor film formation process.
  • the third passivation layer 170 has a thickness of about 5 to 50 ⁇ m.
  • a third contact hole 171 may be formed in the third passivation layer 170 directly under the metal via 160, and a conductive material in the metal via hole 160 may be filled in the third contact hole 171.
  • the method of forming the back metal layer 180 may be formed by the same process as the thin film metal layer 120, or may be formed by other known semiconductor film forming processes.
  • the Cu is filled in the third contact hole 171 by a PVD process, and then The metal is thickened by a plating process, that is, a Cu film is formed on the surface of the third passivation layer 170, and then an etching process is performed to form the back metal layer 180.
  • the back metal layer 180 is included in the third contact hole 171.
  • a filled conductive material, and a patterned conductive layer formed on the surface of the third passivation layer 170, the back metal layer 180 may be in contact with the metal via 160 through the third contact hole 171.
  • a metal protective film 181 is further formed on the surface of the back metal layer 180.
  • the metal protective film 181 is, for example, a NiAu (nickel gold) film or a Sn (tin) film.
  • the NiAu film can be formed by an electroplating process, and the Sn film can be formed by a soldering process.
  • the formed image sensor package structure is as shown in FIG. 3e.
  • a plurality of image sensor chips 100 are formed inside the molding layer 150, and are electrically connected to an external circuit through the front surface structure 300 and the back surface structure 400.
  • a corresponding lens for example, a set of optical lenses
  • a lens holder may be attached to one side of the photosensitive surface 100a to form a lens module.
  • the molding layer 150, the third passivation layer 170, and the back metal layer 180 are used as the base layer, and the plurality of image sensor chips 100 are formed inside the molding layer 150. Therefore, the thickness of the formed package structure (the distance perpendicular to the direction of the photosensitive surface 100a) can be remarkably reduced, which is advantageous for the thinning of the formed package structure; on the other hand, the above packaging method does not require a wire bonding process, but is sensitive.
  • the thin film metal layer 120 formed on the side of the surface 100a but not including the photosensitive surface 100a leads the pad 101, and the formation process thereof has less influence on the photosensitive surface 100a, so the pad 101 and the photosensitive surface 100a are parallel to the photosensitive surface.
  • the interval d' in the direction of 100a can be further reduced compared to the wire bonding process, and the specific d' value can be reduced to less than 50 micrometers, so that the size of the image sensor chip 100 can be reduced, and the integration degree of the formed package structure can be improved. .
  • the formed package structure is used to form a lens module, the space design of the lens module is facilitated, for example, it is easy to achieve miniaturization.
  • the embodiment further provides an image sensor package structure.
  • the image sensor package structure includes:
  • a plurality of spaced-apart image sensor chips 100 including a photosensitive surface 100a and a back surface 100b opposite to the photosensitive surface 100a, and a pad 101 disposed on a non-photosensitive area on the photosensitive surface 100a side,
  • the photosensitive surfaces 100a of the plurality of image sensor chips 100 are in the same direction;
  • the molding layer 150 Surrounding the molding layer 150 of the image sensor chip 100, the molding layer 150 fills a gap between the plurality of image sensor chips 100, and includes a first surface 150a and a same direction as the photosensitive surface 100a a second surface 150b of the back surface 100b in the same direction, wherein a distance between the first surface 150a and the second surface 150b is greater than or equal to a distance between the photosensitive surface 100a and the back surface 100b of the image sensor chip 100;
  • a metal through hole 160 is disposed in the molding layer 150, and the metal through hole 160 is filled with a conductive material;
  • a front surface structure 300 disposed on a side of the photosensitive surface 100a, the front surface structure 300 including a first passivation layer 110, a thin film metal layer 120, and a second passivation layer which are sequentially stacked in a region other than the photosensitive surface 100a 130; and,
  • a back surface structure 400 disposed on a side of the back surface 100b of the image sensor chip 100, the back surface structure 400 including a third passivation covering the second surface 150b of the molding layer 150 and the back surface 100b of the image sensor chip 100 a layer 170 and a back metal layer 180 disposed on a surface of the third passivation layer 170, wherein the thin film metal layer 120 and the back metal layer 170 are both in contact with the metal via 160, the thin film metal layer 120 is also in contact with the pad 101.
  • a first contact hole 111 and a second contact hole 112 may be disposed in the first passivation layer 110, and the first contact hole 111 and the second contact hole 112 are also filled with a conductive material; and the first contact hole 111 is passed through the first contact hole 111.
  • the second contact hole 112 the thin film metal layer 120 is in contact with the metal via 160 and the pad 101 of the image sensor chip 100 respectively;
  • a third contact hole 171 may be disposed in the third passivation layer 170, the third The contact hole 171 is also filled with a conductive material, and the back metal layer 180 is in contact with the metal via 160 through the third contact hole 171.
  • a metal protective film 181 may be disposed on the surface of the back metal layer 180, and the metal protective film 181 is, for example, a NiAu film or a Sn film.
  • the image sensor package structure of the embodiment may further include a cover glass covering the second passivation layer 130 and the photosensitive surface 100a.
  • the protective glass may be an infrared glass, that is, a glass having a blocking and/or filtering effect on infrared rays (for example, light having a wavelength in the range of 750 nm to 1 mm).
  • the transmittance to infrared rays may be selected to be close to or equal to zero.
  • Glass as a protective glass.
  • the cover glass may be bonded to the second passivation layer 130 by an adhesive having a thickness of, for example, about 10 ⁇ m.
  • the molding layer 150 and the photosensitive surface 100a are filled with the gap between the image sensor chips 10, that is, the first surface 150a thereof is flush with the photosensitive surface 100a or higher than the photosensitive surface 100a, and includes the first passivation layer. 110, the front surface structure 300 of the thin film metal layer 120 and the second passivation layer 130 is formed on the surface of the molding layer 150a. Therefore, although the protective glass is located above the photosensitive surface 100a and covers the photosensitive surface 100a, it may not be in contact with the photosensitive surface 100a. Therefore, it is possible to prevent the load applied to the cover glass from affecting the photosensitive surface 100a.
  • This embodiment also provides a lens module including an image sensor package structure as shown in FIG. 3e.
  • the lens module may include an optical lens, such as one or a group of optical lenses applied to a mobile phone camera, the optical lens covering the second passivation layer 130 and the photosensitive surface 100a.
  • the optical lens and the second passivation layer 130 may be adhesively fixed (in the case of a protective glass, bonded to the protective glass), or the optical lens may be disposed on a lens holder and passed through the lens holder. It is fixed and fixed to the image sensor package structure described above.
  • the image sensor package structure has the molding layer 150, the third passivation layer and the back metal layer 180 as a base layer. Since the plurality of image sensor chips 100 are formed inside the molding layer 150, the PCB may not be needed.
  • the thickness of the image sensor package structure in the lens module can be greatly reduced compared with the prior art COB packaging process, and the lateral direction of the pad 101 and the photosensitive surface 100a in the image sensor package structure (parallel to the photosensitive surface 100a)
  • the direction d' is smaller than the corresponding interval d in the CMOB packaging process, thereby achieving thinning and miniaturization of the package structure, thereby facilitating space design of the lens module when forming the lens module, for example, easy to implement miniaturization.

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Abstract

本发明提供了图像传感器的封装方法、图像传感器封装结构和镜头模组，利用所述图像传感器的封装方法，将多个图像传感器芯片形成于成型层的内部，因此可以显著降低所形成的封装结构的厚度，有利于所形成封装结构的薄型化；并且上述封装方法不需要打线工艺，而是在感光面一侧的非感光区域形成的薄膜金属层将焊盘引出，其形成过程对感光面的影响较小，因此焊盘与感光面在平行于感光面方向上的间隔较打线工艺可以进一步减小，从而可以减小图像传感器芯片的尺寸。所形成的封装结构用以形成镜头模组时，有利于镜头模组的空间设计，例如易于实现小型化。

Description

图像传感器的封装方法、图像传感器封装结构和镜头模组 技术领域
本发明涉及图像传感器领域，特别涉及图像传感器的封装方法、图像传感器封装结构和镜头模组。
背景技术
图像传感器是一种能够感受外部光线并将其转换成电信号的半导体器件装置。目前利用集成电路工艺可以在同一晶圆上制作成百上千个图像传感器芯片，图像传感器芯片制作完成后，要对其进行封装形成图像传感器封装结构，后续将图像传感器封装结构的焊盘引出，再安装镜座支架和镜头，可构成镜头模组。镜头模组可用于摄像头、智能手机、数码相机、汽车图像系统和玩具等电子设备。
现有技术中常用的一种图像传感器的封装方法为COB(Chip On Board，板上芯片)封装，是将图像传感器芯片用导电或非导电胶贴附在互联基板(通常采用PCB板)上，然后进行引线键合实现其电气连接，之后可在图像传感器芯片的感光面上通过例如环氧树脂等封装粘合剂覆盖一保护玻璃(例如为红外玻璃，即对红外线具有过滤功能的玻璃)，以保护图像传感器芯片的感光面。
图1是利用现有技术的COB封装工艺得到的图像传感器封装结构的剖面示意图，如图1所示，在垂直于图像传感器芯片10的感光面11(即接收外界光线并进行光电转换的区域)的方向上，图像传感器封装结构包括背面金属电极16、互联基板15、图像传感器芯片10(包括基底12、感光面11、焊盘13)、覆盖感光面11的保护玻璃14以及连接焊盘13与互连基板15的金属引线17，一方面，由于图像传感器芯片10叠加在互连基板15上，导致所形成的传感器封装结构的厚度(图1中纵向方向)较大，另一方面，由于金属引 线17通过打线方式在焊盘13和互连基板15上形成，由于工艺限制，焊盘13和感光面11在图像传感器芯片10上的间隔d(平行于感光面11的方向)通常应大于500微米，因而限制了图像传感器封装结构面积的进一步缩小，并且，两方面的原因均会造成图1所示结构在后续构成镜头模组时尺寸上的限制。
发明内容
本发明所解决的技术问题是利用COB封装工艺所得到的图像传感器封装结构的厚度较大不利于图像传感器封装结构的薄片化问题。
为解决上述问题，一方面，本发明提供了一种图像传感器的封装方法，包括：
将多个图像传感器芯片间隔贴附在一载板表面，所述图像传感器芯片包括感光面和与所述感光面相对的背面，并且，贴附之后的多个所述图像传感器芯片其感光面在同一方向；
制作成型层，所述成型层覆盖多个所述图像传感器芯片之间的载板表面，并且包括与所述感光面相同方向的第一表面和与所述背面相同方向的第二表面；
去除载板；
其中，所述成型层的第一表面和第二表面之间的距离大于或者等于所述图像传感器芯片的感光面与背面之间的距离。
可选的，所述成型层包括热固性树脂。
可选的，所述图像传感器芯片还包括在所述感光面一侧的非感光区域形成的焊盘，所述焊盘用于所述图像传感器芯片与外部电路连接。
可选的，所述封装方法还包括：形成贯穿所述成型层的若干金属通孔，所述金属通孔中填充有导电材料；在所述感光面一侧形成正面结构，所述正 面结构包括在所述感光面以外的区域依次形成的第一钝化层、薄膜金属层以及第二钝化层；在所述图像传感器芯片的背面一侧形成背面结构，所述背面结构包括覆盖所述第二表面和所述背面的第三钝化层以及在所述第三钝化层的表面形成的背面金属层；其中，所述薄膜金属层和所述背面金属层均与所述金属通孔接触，所述薄膜金属层还与所述焊盘接触。
可选的，所述封装方法还包括：在第一钝化层内设置有第一接触孔和第二接触孔，所述薄膜金属层分别通过第一接触孔和第二接触孔与所述金属通孔和所述焊盘接触，以及，在所述第三钝化层中形成第三接触孔，所述背面金属层通过第三接触孔与所述金属通孔接触。
另一方面，本发明还提供了一种图像传感器封装结构，包括：
多个间隔分布的图像传感器芯片，所述图像传感器芯片包括感光面和与所述感光面相对的背面，多个所述图像传感器芯片的感光面在同一方向；
包围所述图像传感器芯片的成型层，所述成型层填充多个所述图像传感器芯片之间的间隙，并且包括与所述感光面相同方向的第一表面和与所述背面相同方向的第二表面；
其中，所述成型层的第一表面和第二表面之间的距离大于或者等于所述图像传感器芯片的感光面与背面之间的距离。
可选的，所述封装结构还包括：
在所述感光面一侧的非感光区域设置的焊盘，所述焊盘用于所述图像传感器芯片与外部电路连接；
在所述成型层内设置的金属通孔，所述金属通孔被导电材料填充；
在所述感光面一侧设置的正面结构，所述正面结构包括在所述感光面以外的区域依次层叠设置的第一钝化层、薄膜金属层以及第二钝化层；
在所述图像传感器芯片的背面一侧设置的背面结构，所述背面结构包括覆盖所述成型层的第二表面和所述图像传感器芯片的背面的第三钝化层以及 在所述第三钝化层表面设置的背面金属层；
其中，所述薄膜金属层和所述背面金属层均与所述金属通孔接触，所述薄膜金属层还与所述焊盘接触。
可选的，在所述第一钝化层内设置有第一接触孔和第二接触孔，所述薄膜金属层分别通过所述第一接触孔和所述第二接触孔与所述金属通孔和所述焊盘接触，以及，在所述第三钝化层中形成第三接触孔，所述背面金属层通过所述第三接触孔与所述金属通孔接触。
可选的，所述图像传感器封装结构还包括一保护玻璃，所述保护玻璃覆盖所述第二钝化层以及所述感光面。
可选的，在平行于所述感光面的方向上，所述焊盘与所述感光面的间隔小于50微米。
可选的，所述成型层包括热固性树脂。
再一方面，本发明还提供一种镜头模组，包括上述的图像传感器封装结构。
利用本发明提供的图像传感器的封装方法，将多个图像传感器芯片间隔贴附在一载板表面，并且在多个图像传感器芯片之间制作成型层，接着去除载板，所述成型层的厚度大于或者等于所述图像传感器芯片厚度(均是指垂直于感光面方向的尺寸)，即所述图像传感器芯片嵌入成型层中，与现有技术的COB封装工艺相比，不需要互连基板，降低了所形成的图像传感器封装结构的厚度，有利于实现图像传感器芯片的薄片化，本发明提供的图像传感器的封装结构的厚度较低，在用于构成镜头模组时，更易于实现小型化。
进一步的，在所述图像传感器芯片的感光面一侧的非感光区域形成有焊盘，利用本发明提供的图像传感器的封装方法，不需要打线工艺形成金属引线，利用半导体薄膜工艺形成的薄膜金属层用于图像传感器芯片上的焊盘引出，因此焊盘与感光面在平行于感光面的方向上的间隔可以减小到50微米以 下，即图像传感器芯片的尺寸可以进一步减少，有利于提高集成度。
附图说明
图1是利用现有技术的COB封装工艺形成的图像传感器封装结构的剖面示意图。
图2是本发明实施例的图像传感器的封装方法的流程示意图。
图3a至图3e是本发明实施例的图像传感器的封装方法各步骤的剖面示意图。
附图标记说明：
10、100-图像传感器芯片；12-基底；16-背面金属电极；15-互连基板；14-保护玻璃；17-金属引线；200-载板；11、100a-感光面；100c-非感光区域；100b-背面；13、101-焊盘；150-成型层；160-金属通孔；150a-第一表面；150b-第二表面；110-第一钝化层；120-薄膜金属层；130-第二钝化层；111-第一接触孔；112-第二接触孔；171-第三接触孔；300-正面结构；400-背面结构；170-第三钝化层；180-背面金属层；181-金属保护膜。
具体实施方式
以下结合附图和具体实施例对本发明的图像传感器的封装方法、图像传感器封装结构和镜头模组作进一步详细说明。根据下面的说明和附图，本发明的优点和特征将更清楚，然而，需说明的是，本发明技术方案的构思可按照多种不同的形式实施，并不局限于在此阐述的特定实施例。附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
在说明书和权利要求书中的术语“第一”“第二”等用于在类似要素之间进行区分，且未必是用于描述特定次序或时间顺序。要理解，在适当情况下， 如此使用的这些术语可替换，例如可使得本文所述的本发明实施例能够以不同于本文所述的或所示的其他顺序来操作。类似的，如果本文所述的方法包括一系列步骤，且本文所呈现的这些步骤的顺序并非必须是可执行这些步骤的唯一顺序，且一些所述的步骤可被省略和/或一些本文未描述的其他步骤可被添加到该方法。若某附图中的构件与其他附图中的构件相同，虽然在所有附图中都可轻易辨认出这些构件，但为了使附图的说明更为清楚，本说明书不会将所有相同构件的标号标于每一图中。
本发明中所称图像传感器的封装方法主要指的是将图像传感器芯片封装形成图像传感器封装结构的方法。
图2是本发明实施例的图像传感器的封装方法的流程示意图。包括如下步骤：
S1：将多个图像传感器芯片间隔贴附在一载板表面，所述图像传感器芯片包括感光面和与所述感光面相对的背面，所述图像传感器芯片还包括在所述感光面一侧的非感光区域形成的焊盘，并且，贴附之后的多个所述图像传感器芯片的感光面在同一方向；
S2：制作成型层，所述成型层覆盖多个所述图像传感器芯片之间的载板表面，并且包括与所述感光面相同方向的第一表面和与所述背面相同方向的第二表面，其中，所述成型层的第一表面和第二表面之间的距离大于或者等于所述图像传感器芯片的感光面与背面之间的距离；
S3：去除载板，形成贯穿所述成型层的若干金属通孔，所述金属通孔被导电材料填充；
S4：在所述感光面一侧形成正面结构，所述正面结构包括在所述感光面以外的区域依次形成的第一钝化层、薄膜金属层以及第二钝化层；
S5：在所述图像传感器芯片的背面一侧形成背面结构，所述背面结构包括覆盖所述第二表面和所述背面的第三钝化层以及在所述第三钝化层的表面 形成的背面金属层，其中，所述薄膜金属层和所述背面金属层均与所述金属通孔接触，所述薄膜金属层还与所述焊盘接触。
图3a至图3e是本发明实施例的图像传感器的封装方法各步骤的剖面示意图。以下结合图2和图3a至图3e对本实施例的图像传感器的封装方法做进一步详细的说明。
结合图2和图3a，执行步骤S1，将多个图像传感器芯片100间隔贴附在一载板200表面，图像传感器芯片100包括感光面100a和与所述感光面相对的背面100b，图像传感器芯片100还包括在所述感光面100a一侧的非感光区域100c形成的焊盘101，并且，贴附之后的多个所述图像传感器芯片100其感光面100a在同一方向。
需要说明的是，虽然图3a中仅示出了两个图像传感器芯片100，但是，本实施例中是将多个相同的图像传感器芯片100贴附在载板200表面。在另一实施例中，除了本实施例中所述的图像传感器芯片100之外，还可以将其他功能芯片或器件，例如图像处理芯片、中央处理芯片、被动元器件等贴附在载板200表面，并且相互之间间隔设置。本领域技术人员可以不脱离本发明的发明构思的范围内，对图像传感器芯片100的数量和分布进行变型。
具体的，所述载板200为一辅助(或临时性)载板，其材质例如为玻璃、陶瓷或聚合物材料，其贴附图像传感器芯片100的表面可以是平面，其形状可以是方形或圆形的板形。
在另一实施例中，所述载板200还可包括设置于其边缘的围墙，该围墙的高度可以大于或者等于图像传感器芯片100的厚度(感光面100a与背面100b之间的距离)，此外，围墙可设置为可拆卸结构。
图像传感器芯片100可通过粘合剂(未示出)贴附到载板200表面。
图像传感器芯片100例如为CMOS或CCD图像传感器芯片，本实施例中以CMOS图像传感器芯片为例，其具有一感光面100a，即图像传感器芯片100 的感光区域，以及一背面100b，即与感光面100a远离的表面。在感光面100a上，设置了微透镜结构，以利于光线(主要是可见光)的入射效率，在图像传感器芯片100内部可包括分别对应红(R)、绿(G)、蓝(B)的感光单元，入射至各感光单元的入射光通过光电转换，可转化成电信号并通过内部电路(未示出)传输至外部电路。本实施例中，感光面100a是具有感光功能(通过微透镜结构入射后进行R、G、B光电转换的表面)，在感光面100a的同一侧，还包括非感光区域100c，在非感光区域100c，设置有用于与外部电路连接的两个焊盘101，即图像传感器芯片100内部电路的引出区域，并且，在平行于感光面100a的方向上焊盘101与感光面100a隔开一距离d'。在其他实施例中，焊盘101也可以为1个，或者焊盘101也可以设置于图像传感器芯片的背面100b一侧。
本实施例的本实施例中通过粘合剂将感光面100a与载板200粘合，而背面100b远离载板200。但本发明不限于此，在其他实施例中，根据图像传感器芯片100的具体结构，也可以使背面100b通过粘合剂贴附在载板200上。
本实施例中，多个图像传感器芯片100并非连续贴附在载板100表面，而是任意两个图像传感器芯片100隔开一定距离分布，例如贴附完成之后可在载板100表面形成一芯片阵列，图像传感器芯片100之间的距离可以根据贴片设备以及制程的要求进行设置，本发明对此不做限制。
结合图2和图3b，执行步骤S2，制作成型层150，所述成型层150覆盖多个所述图像传感器芯片100之间的载板200表面，所述成型层150包括与所述感光面100a相同方向的第一表面150a和与所述背面100b相同方向的第二表面150b，其中，所述成型层150的第一表面150a和第二表面150b之间的距离大于或者等于所述图像传感器芯片100的感光面100a与背面100b之间的距离。
成型层150可包括吸收至少一部分光的材料、光反射材料或光散射材料， 还可以包括对可见光(例如波长在380～750nm范围内的光)是半透明或不透明的绝缘材料，并且也可以包括对红外线(例如波长在750nm～1mm范围内的光)透光率接近于零的绝缘材料。例如，成型层150可包括诸如聚碳酸脂(PC)、聚对苯二甲酸乙二醇酯(PET)、聚醚砜、聚苯醚、聚酰胺、聚醚酰亚胺、甲基丙烯酸树脂或环聚烯烃系树脂的热塑性树脂，以及诸如环氧树脂、酚树脂、聚氨酯树脂、亚克力树脂、乙烯酯树脂、酰亚胺类树脂、聚氨酯类树脂、尿素树脂或三聚氰胺树脂的热固性树脂，或者诸如聚苯乙烯(PS)、聚丙烯腈等有机绝缘材料，但本发明不限于此。
在另一实施例中，成型层150可包括诸如氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钛、氧化钽或氧化锌的无机氧化物或者无机氮化物的无机绝缘材料。但本发明不限于此。
在又一实施例中，成型层150可包括如黑色矩阵材料的不透明材料。黑色矩阵材料可包括有机树脂、包含玻璃膏和黑色颜料的树脂或膏。
本实施例中成型层150优选为包括热固性树脂，例如为环氧树脂，热固性树脂的加入，可以提高成型层150在受热状态下的平整性能，从而提高多个图像传感器芯片100的平整度，例如，在测试温度达到260度时，多个图像传感器芯片100的平整度的变化小于20微米。而利用现有COB封装技术，在相同测试温度下，多个图像传感器芯片100的平整度变化在70～90微米。
具体的，可以利用旋涂工艺在载板200的表面涂布环氧树脂。由于载板200表面间隔贴附有图像传感器芯片100，因此，成型层150首先会分布于多个图像传感器芯片100之间的载板200的表面，并且可通过设置环氧树脂的量使得成型层150填满多个图像传感器芯片100之间的间隙，接着可通过例如刮板的方法使环氧树脂与图像传感器芯片100基本齐平，但在容许厚度范围内，成型层150的也可以形成为高于图像传感器芯片100的背面100d。本发明不限于此，所述成型层150的第一表面150a和第二表面150b之间的距 离可以大于或者等于所述图像传感器芯片100的感光面100a与背面100b之间的距离。随后可以通过烘烤使环氧树脂固化。另外可利用例如干法刻蚀感光面100a的成型层150以便暴露出图像传感器芯片100的背面100b，所得到的成型层150将图像传感器芯片100包围。在另一实施例中，也可以利用喷墨打印(Ink Jet Printing，IJP)工艺在多个图像传感器芯片100之间制作成型层150。但不局限于此，成型层150的制作可以根据所选择的材料的性质选择适当的工艺进行制作。
结合图2和图3c，执行步骤S3，去除载板200，形成贯穿所述成型层150的若干金属通孔160，所述金属通孔160被导电材料填充。
本实施例中由于载板200与图像传感器芯片100通过粘合剂粘接，该粘合剂例如是热熔胶，则可以通过加热载板200的方式改变热熔胶的粘度，以将载板200去除。需要注意的是，该热熔胶的加热温度应低于成型层150的固化温度，以避免影响成型层150。在另一实施例中，该粘合剂的粘度可变，并且可以借以激光、红外线或超声波等方式定位粘合剂的位置，同时加热载板200，使得粘合剂粘性变差，从而去除载板200。在又一实施例中，还可以在载板200与图像传感器芯片100的感光面100a施加使二者相反方向移动的力，从而去除载板200，但本发明不限于此，例如也可以采用激光剥离或机械切割的方式将载板200去除。
去除载板200之后，可在成型层150中通过机械打孔、激光打孔或者干法刻蚀等方法形成贯穿所述成型层150的若干通孔，具体可以根据成型层150的材料性质选择适当的打孔方法形成通孔。本实施例中对于环氧树脂制作的成型层150，可以利用激光打孔工艺形成通孔。通孔可围绕图像传感器芯片100分布，即，可以在一个图像传感器芯片100周围的成型层150中，形成一个或多个通孔。
接着，可以在通孔中填充导电材料形成金属通孔160。金属通孔160可以 将在成型层150某一表面上形成的电气连接导引到成型层150的另一表面，弥补传统半导体芯片二维布线的局限性，这种互连方式把不同工艺材料和不同的功能模块集成到一起，可以提高芯片封装的集成度，给芯片整体性能优化带来很大方便。本实施例中，可以通过例如电镀或者化学镀的方法在通孔中填充Cu(铜)形成金属通孔160。但本发明不限于此，导电材料还可以是W(钨)、Ag(银)或Au(金)等导电金属、导电合金或者导电胶，并且金属通孔160的形成工艺也可以利用本领域的公知的方法。
结合图2和图3d，执行步骤S4，在所述感光面100a一侧形成正面结构300，所述正面结构300包括在所述感光面100a以外的区域依次形成的第一钝化层110、薄膜金属层120以及第二钝化层130。
正面结构300用于将图像传感器芯片100的焊盘101引出并形成电气互联，以便与外部电路连接，以控制部分或全部的图像传感器芯片100。
具体的，参照图3d(与图3c相比，图像传感器芯片100的感光面100a经翻转朝上示意)，首先在感光面100a一侧但不包括感光面100a的区域(本实施例中包括成型层150的第一表面150a以及非感光区域100c)形成第一钝化层110，第一钝化层110的厚度例如约5～25微米；接着，可以在金属通孔160的正上方的第一钝化层110中形成第一接触孔111，并在图像传感器芯片100的焊盘101的正上方的第一钝化层110中形成第二接触孔112；接着利用导电材料填充第一接触孔111和第二接触孔112，并在第一钝化层110表面形成图案化的金属薄膜从而形成连接图像传感器芯片100和金属通孔160的薄膜金属层120，所形成的薄膜金属层120通过第一接触孔111与金属通孔160接触，并且通过第二接触孔112中与图像传感器芯片100的焊盘101接触；然后，形成第二钝化层130，第二钝化层130的厚度例如约5～25微米，所述第二钝化层130覆盖第一钝化层110以及金属引线120，但暴露出感光面100a。
第一钝化层110和第二钝化层130可以隔离薄膜金属层120避免短路， 因此二者优选为绝缘材料，第一钝化层110和第二钝化层130可以是同种材料也可以是不同材料，本实施例中第一钝化层110和第二钝化层130为高分子材料，例如是聚酰亚胺(polyimides)、苯并环丁烯(BCB)或者聚对二恶唑苯(PBO)中的一种或者他们的组合。第一钝化层110和第二钝化层130可以采用旋涂成膜、热固化、曝光、显影、气体灰化、脱模等工艺形成。但本发明不限于此，第一钝化层110和第二钝化层130的成膜以及图案化可以根据所选材料的性质选择适当的工艺进行。
第一接触孔111和第二接触孔112可以采用例如半导体工艺中的干法刻蚀工艺形成。形成第一接触孔111和第二接触孔112之后，可以利用PVD(Plasma Vapor Deposition，等离子体气相沉积)或者热蒸镀工艺在第一接触孔111和第二接触孔112内部以及外部形成金属种子层，并在该金属种子层上电镀金属以得到所需的厚度。然后再进行光阻涂布、曝光、显影、蚀刻、去除光阻的工艺，使金属层图案化从而形成薄膜金属层120。具体的，本实施例中薄膜金属层120包括在第一接触孔111和第二接触孔中填充的导电材料，以及在第一钝化层110表面形成的图案化的金属层材料。
薄膜金属层120具体可以是Cu、Ag、W或Au等金属材料、导电合金、导电氧化物(例如ITO)，但不限于此，薄膜金属层120也可以是导电的有机材料，例如导电聚合物，在某些实施例中，可以采用例如打印的方式形成薄膜金属层120。所述薄膜金属层120在第一钝化层110表面上的厚度约3～10微米，优选3～5微米。
利用上述半导体薄膜工艺形成薄膜金属层120，其可以用于图像传感器芯片10与外部电路的连接，与PCB封装工艺中的打线相比，对感光面100a的影响较小，因此，利用本实施例中的薄膜金属层120的形成方法，焊盘101与感光面100a在平行于感光面100a的方向上的间隔d'减少，在本实施例中，d'值可以降到50微米以下，与之相对的，如背景技术所述，PCB封装工艺中， 焊盘与感光面的间隔d通常大于500微米。d'值变小，有利于图像传感器芯片100的集成度提高，也有利于集成多个图像传感器芯片100所形成的封装结构的小型化。
结合图2和图3e，执行步骤S5，在所述图像传感器芯片100的背面100d一侧形成背面结构400，所述背面结构400包括覆盖所述第二表面150b和所述背面100d的第三钝化层170以及在所述第三钝化层170的表面形成的背面金属层180，其中，所述薄膜金属层130和所述背面金属层180均与所述金属通孔160接触。
本实施例中第三钝化层170可以选择与第一钝化层110或第二钝化层130相同的材料以及半导体成膜工艺形成。第三钝化层170的厚度约5～50μm。
形成第三钝化层170之后，可以在金属通孔160正下方的第三钝化层170中形成第三接触孔171，并且在第三接触孔171中填充与金属通孔160中的导电材料相同或不同的导电材料；接着形成覆盖第三接触孔171以及部分第三钝化层170的背面金属层180。背面金属层180的形成方法可以采用与薄膜金属层120相同的工艺形成，也可以采用公知的其他半导体成膜工艺形成，本实施例中，在第三接触孔171中利用PVD工艺填充Cu，接着利用电镀工艺进行金属增厚，即在第三钝化层170表面形成Cu膜，随后进行刻蚀工艺，形成背面金属层180，具体的，此处背面金属层180包括在第三接触孔171中填充的导电材料，以及在第三钝化层170表面形成的图案化的导电层，背面金属层180通过第三接触孔171可以与金属通孔160接触。
优选方案中，背面金属层180表面还形成有金属保护膜181。所述金属保护膜181例如是NiAu(镍金)薄膜或者Sn(锡)膜。NiAu薄膜可采用电镀工艺形成，而Sn膜可通过锡焊的工艺形成。
经过上述步骤S1至S5，所形成的图像传感器封装结构如图3e所示。其中，将多个图像传感器芯片100形成于成型层150内部，并且通过正面结构 300和背面结构400与外部电路进行电气连接。后续可在感光面100a一侧安装相应的镜头(例如为一组光学镜片)及镜头支架构成镜头模组。
利用本实施例提供的图像传感器的封装方法，一方面，以成型层150、第三钝化层170和背面金属层180作为基底层，并且将多个图像传感器芯片100形成于成型层150的内部，因此可以显著降低所形成的封装结构的厚度(垂直于感光面100a方向的距离)，有利于所形成封装结构的薄型化；另一方面，上述封装方法不需要打线工艺，而是在感光面100a一侧但不包括感光面100a的区域形成的薄膜金属层120将焊盘101引出，其形成过程对感光面100a的影响较小，因此焊盘101与感光面100a的在平行于感光面100a方向上的间隔d'较打线工艺可以进一步减小，具体的d'值可以减小到50微米以下，从而图像传感器芯片100的尺寸可以减小，可以提高所形成的封装结构的集成度。所形成的封装结构用以形成镜头模组时，有利于镜头模组的空间设计，例如易于实现小型化。
本实施例还提供了一种图像传感器封装结构，如图3e所示，所述图像传感器封装结构包括：
多个间隔分布的图像传感器芯片100，所述图像传感器芯片100包括感光面100a和与所述感光面100a相对的背面100b，在所述感光面100a一侧的非感光区域设置的焊盘101，多个所述图像传感器芯片100的感光面100a在同一方向；
包围所述图像传感器芯片100的成型层150，所述成型层150填充了多个所述图像传感器芯片100之间的间隙，并且包括与所述感光面100a相同方向的第一表面150a和与所述背面100b相同方向的第二表面150b，其中，第一表面150a和第二表面150b之间的距离大于或者等于所述图像传感器芯片100的感光面100a与背面100b之间的距离；
在所述成型层150内设置有金属通孔160，所述金属通孔160被导电材料填充；
在所述感光面100a一侧设置的正面结构300，所述正面结构300包括在所述感光面100a以外的区域依次层叠设置的第一钝化层110、薄膜金属层120以及第二钝化层130；以及，
在所述图像传感器芯片100的背面100b一侧设置的背面结构400，所述背面结构400包括覆盖所述成型层150的第二表面150b和所述图像传感器芯片100的背面100b的第三钝化层170以及在所述第三钝化层170表面设置的背面金属层180，其中，所述薄膜金属层120和所述背面金属层170均与所述金属通孔160接触，所述薄膜金属层120还与所述焊盘101接触。
具体的，在第一钝化层110内还可设置第一接触孔111和第二接触孔112，并且第一接触孔111和第二接触孔112同样填充有导电材料；通过第一接触孔111和第二接触孔112，薄膜金属层120分别与金属通孔160和图像传感器芯片100的焊垫101相接触；在第三钝化层170内还可设置第三接触孔171，所述第三接触孔171也填充有导电材料，背面金属层180通过第三接触孔171与金属通孔160相接触。
本实施例中，背面金属层180表面可设置金属保护膜181，所述金属保护膜181例如为NiAu薄膜或者Sn膜。
另外，本实施例的图像传感器封装结构还可包括一保护玻璃，所述保护玻璃覆盖所述第二钝化层130以及感光面100a。保护玻璃可以是一红外玻璃，即对红外线(例如波长在750nm～1mm范围内的光)具有阻挡和/或过滤作用的玻璃，优选方案中，可选择对红外线的透过率接近或者等于0的玻璃作为保护玻璃。所述保护玻璃可以通过粘合剂与第二钝化层130粘接，粘合剂的厚度例如约10μm。
本实施例中由于成型层150与感光面100a填满了图像传感器芯片10之 间的间隙，即其第一表面150a与感光面100a齐平或者高于感光面100a，而包括第一钝化层110、薄膜金属层120以及第二钝化层130的正面结构300形成于成型层150a的表面，因此，保护玻璃虽然位于感光面100a的上方并覆盖感光面100a，但可以不与感光面100a接触，从而可以避免施加到保护玻璃上的载荷对感光面100a造成影响。
本实施例还提供了一种镜头模组，包括如图3e所示的图像传感器封装结构。
所述镜头模组可包括光学镜头，例如是应用于手机摄像头的一个或一组光学镜片，所述光学镜头覆盖所述第二钝化层130以及感光面100a。所述光学镜头与第二钝化层130可以粘接固定(在具有保护玻璃的情况下，则是与保护玻璃粘结固定)，或者所述光学镜头可设置于一镜头支架，并且通过镜头支架与上述图像传感器封装结构嵌合固定。
本实施例的镜头模组，其中图像传感器封装结构以成型层150、第三钝化层和背面金属层180作为基底层，由于多个图像传感器芯片100形成于成型层150内部，可以不需要PCB基板，与现有技术的COB封装工艺相比，镜头模组中的图像传感器封装结构的厚度可以大大降低，另外图像传感器封装结构中的焊盘101与感光面100a的横向(平行于感光面100a的方向)间隔d'小于CMOB封装工艺中的对应间隔d，从而实现了所述封装结构的薄型化和小型化，因而在形成镜头模组时，有利于镜头模组的空间设计，例如易于实现小型化。
需要说明的是，本实施例中的方法和结构采用递进的方式描述，在后的方法和结构的描述重点说明的都是与在前的方法和结构的不同之处，对于本实施例公开的结构而言，由于与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
上述描述仅是对本发明较佳实施例的描述，并非对本发明权利范围的任何限定，任何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改，因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰，均属于本发明技术方案的保护范围。

Claims (12)

  1. 一种图像传感器的封装方法，其特征在于，包括：
    将多个图像传感器芯片间隔贴附在一载板表面，所述图像传感器芯片包括感光面和与所述感光面相对的背面，并且，贴附之后的多个所述图像传感器芯片其感光面朝同一方向；
    制作成型层，所述成型层覆盖多个所述图像传感器芯片之间的载板表面，并且包括与所述感光面朝相同方向的第一表面和与所述背面朝相同方向的第二表面；
    去除所述载板；
    其中，所述成型层的第一表面和第二表面之间的距离大于或者等于所述图像传感器芯片的感光面与背面之间的距离。
  2. 如权利要求1所述的图像传感器的封装方法，其特征在于，所述图像传感器芯片还包括在所述感光面一侧的非感光区域形成的焊盘，所述焊盘用于所述图像传感器芯片与外部电路连接。
  3. 如权利要求2所述的图像传感器的封装方法，其特征在于，所述封装方法还包括：
    形成贯穿所述成型层的若干金属通孔，所述金属通孔中填充有导电材料；
    在所述感光面一侧形成正面结构，所述正面结构包括在所述感光面以外的区域依次形成的第一钝化层、薄膜金属层以及第二钝化层；
    在所述图像传感器芯片的背面一侧形成背面结构，所述背面结构包括覆盖所述第二表面和所述背面的第三钝化层以及在所述第三钝化层的表面形成的背面金属层；
    其中，所述薄膜金属层和所述背面金属层均与所述金属通孔接触，所述薄膜金属层还与所述焊盘接触。
  4. 如权利要求3所述的图像传感器的封装方法，其特征在于，所述封装方法还包括：在所述第一钝化层内形成第一接触孔和第二接触孔，所述薄膜金属层分别通过所述第一接触孔和所述第二接触孔与所述金属通孔和所述焊盘接触，以及，在所述第三钝化层中形成第三接触孔，所述背面金属层通过所述第三接触孔与所述金属通孔接触。
  5. 如权利要求1至4任一项所述的图像传感器的封装方法，其特征在于，所述成型层包括热固性树脂。
  6. 一种图像传感器封装结构，其特征在于，包括：
    多个间隔分布的图像传感器芯片，所述图像传感器芯片包括感光面和与所述感光面相对的背面，多个所述图像传感器芯片的感光面朝同一方向；
    包围所述图像传感器芯片的成型层，所述成型层填充多个所述图像传感器芯片之间的间隙，并且包括与所述感光面朝相同方向的第一表面和与所述背面朝相同方向的第二表面；
    其中，所述成型层的第一表面和第二表面之间的距离大于或者等于所述图像传感器芯片的感光面与背面之间的距离。
  7. 如权利要求6所述的图像传感器封装结构，其特征在于，所述封装结构还包括：
    在所述感光面一侧的非感光区域设置的焊盘，所述焊盘用于所述图像传感器芯片与外部电路连接；
    在所述成型层内设置的金属通孔，所述金属通孔被导电材料填充；
    在所述感光面一侧设置的正面结构，所述正面结构包括在所述感光面以外的区域依次层叠设置的第一钝化层、薄膜金属层以及第二钝化层；
    在所述图像传感器芯片的背面一侧设置的背面结构，所述背面结构包括覆盖所述成型层的第二表面和所述图像传感器芯片的背面的第三钝化层以及在所述第三钝化层表面设置的背面金属层；
    其中，所述薄膜金属层和所述背面金属层均与所述金属通孔接触，所述薄膜金属层还与所述焊盘接触。
  8. 如权利要求7所述的图像传感器封装结构，其特征在于，在所述第一钝化层内设置有第一接触孔和第二接触孔，所述薄膜金属层分别通过所述第一接触孔和所述第二接触孔与所述金属通孔和所述焊盘接触，以及，在所述第三钝化层中形成第三接触孔，所述背面金属层通过所述第三接触孔与所述金属通孔接触。
  9. 如权利要求7所述的图像传感器封装结构，其特征在于，所述图像传感器封装结构还包括一保护玻璃，所述保护玻璃覆盖所述第二钝化层以及所述感光面。
  10. 如权利要求7所述的图像传感器封装结构，其特征在于，其特征在于，在平行于所述感光面的方向上，所述焊盘与所述感光面的间隔小于50微米。
  11. 如权利要求7至10中任一项所述的图像传感器封装结构，其特征在于，所述成型层包括热固性树脂。
  12. 一种镜头模组，其特征在于，包括如权利要求6至11中任一权利要求所述的图像传感器封装结构。
PCT/CN2018/108630 2017-10-20 2018-09-29 图像传感器的封装方法、图像传感器封装结构和镜头模组 WO2019076189A1 (zh)

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